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11. 发明授权

US08679976B2 Method of manufacturing graphene by using germanium layer 有权
标题翻译：使用锗层制造石墨烯的方法
公开(公告)号：US08679976B2
公开(公告)日：2014-03-25
申请号：US12976874
申请日：2010-12-22
申请人： Eun-kyung Lee , Byoung-Iyong Choi , Dong-mok Whang , Jae-hyun Lee
发明人： Eun-kyung Lee , Byoung-Iyong Choi , Dong-mok Whang , Jae-hyun Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/02527 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2204/04 , C23C16/0272 , C23C16/26 , C30B25/02 , C30B29/08 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/0262
摘要： A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.
摘要翻译：制造石墨烯的方法包括在基板的表面上形成锗层，并且通过将含碳气体供给到其中设置基板的室中，直接在锗层上形成石墨烯。

12. 发明申请

US20070174780A1 Control method for digital image processing apparatus for convenient movement mode and digital image processing apparatus using the method 有权
标题翻译：用于方便移动模式的数字图像处理装置的控制方法和使用该方法的数字图像处理装置
公开(公告)号：US20070174780A1
公开(公告)日：2007-07-26
申请号：US11432817
申请日：2006-05-11
申请人： Se-hyun Park , Chang-beom Shin , Eun-kyung Lee , Na-ri Choi
发明人： Se-hyun Park , Chang-beom Shin , Eun-kyung Lee , Na-ri Choi
IPC分类号： G06F17/00
CPC分类号： G06F3/0481
摘要： Provided is a control method for a digital image processing apparatus having a movement mode in which a user moves a target object to a target position, the method including: displaying icons including an image icon of a target object and an icon indicating a target position; displaying an icon indicating a new target position in response to the detection of a target position change signal; displaying an image icon of a new target object in response to the detection of a target object change signal; and moving the target object of the image icon currently displayed to the target position indicated by the icon currently displayed in response to the detection of a movement signal.
摘要翻译：提供一种具有移动模式的数字图像处理装置的控制方法，其中用户将目标对象移动到目标位置，该方法包括：显示包括目标对象的图像图标和指示目标位置的图标的图标; 响应于目标位置改变信号的检测显示指示新目标位置的图标; 响应于目标对象改变信号的检测显示新的目标对象的图像图标; 以及响应于检测到移动信号，将当前显示的图像图标的目标物体移动到由当前显示的图标指示的目标位置。

13. 发明申请

US20060252171A1 Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
公开(公告)号：US20060252171A1
公开(公告)日：2006-11-09
申请号：US11350751
申请日：2006-02-10
申请人： Eun-kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
发明人： Eun-kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
IPC分类号： H01L21/00 , A61B1/04 , H04N7/18
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G01Q80/00 , H01L27/14601 , H01L27/14621 , H01L27/14645 , H01L27/14683 , H01L27/156 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L33/0054 , H01L33/24 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

14. 发明授权

US07128297B2 Imaging device having stand connection 有权
公开(公告)号：US07128297B2
公开(公告)日：2006-10-31
申请号：US11074158
申请日：2005-03-07
申请人： Eun-kyung Lee
发明人： Eun-kyung Lee
IPC分类号： A47B91/00
CPC分类号： H04M1/0214 , H04M1/0218 , H04M1/04 , H04M2250/52
摘要： Provided is an imaging device having a stand connector that can assume an open position for allowing connection with a stand or tripod and a closed position when not coupled with the stand. The stand connector of the imaging device includes a connector body including a hollow cavity and a female screw capable of coupling with a corresponding male screw of the stand, an insert received in the cavity of the connector body and moveable between an open position allowing coupling of the stand by screwing the screws of the connector body and the stand and a closed position substantially covering an open end of the cavity in the connector body when not coupling with the stand, and biasing means configured to bias the insert to the closed position.

15. 发明申请

US20060227837A1 Quantum dot vertical cavity surface emitting laser and fabrication method of the same 审中-公开
标题翻译：量子点垂直腔表面发射激光器及其制作方法相同
公开(公告)号：US20060227837A1
公开(公告)日：2006-10-12
申请号：US11285176
申请日：2005-11-23
申请人： Eun-kyung Lee , Byoung-Iyong Choi
发明人： Eun-kyung Lee , Byoung-Iyong Choi
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/041 , H01S5/18 , H01S5/34
摘要： A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed of nano-particle type group II-VI compound semiconductor quantum dots on the ETL, a hole transport layer (HTL) formed on the EML, and an upper DBR mirror formed on the HTL.
摘要翻译：提供量子点垂直容量表面发射激光器（QD-VCSEL）及其制造方法。 QD-VCSEL包括基板，形成在基板上的下分布式布拉格反射镜（DBR）反射镜，形成在下DBR反射镜上的电子传输层（ETL），由纳米颗粒型II组形成的发射层（EML） -VI化合物半导体量子点，在EML上形成的空穴传输层（HTL）和形成在HTL上的上DBR反射镜。

16. 发明申请

US20060212975A1 Nano wires and method of manufacturing the same 有权
标题翻译：纳米线和制造方法相同
公开(公告)号：US20060212975A1
公开(公告)日：2006-09-21
申请号：US11369859
申请日：2006-03-08
申请人： Byoung-Iyong Choi , Eun-kyung Lee
发明人： Byoung-Iyong Choi , Eun-kyung Lee
IPC分类号： H01L51/40
CPC分类号： B82Y30/00 , C30B11/12 , C30B29/605 , Y10S977/721 , Y10S977/762 , Y10S977/768 , Y10S977/789 , Y10S977/81 , Y10S977/938
摘要： Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.
摘要翻译：提供纳米线及其制造方法。该方法包括形成具有多个微腔的微槽，微槽在硅衬底的表面上形成规则图案; 通过沉积作为催化剂的材料在硅衬底上形成纳米线，在硅衬底上形成金属层; 通过加热金属层以形成催化剂，将硅衬底表面上的微槽内的金属层凝集成形成催化剂; 并使用热处理在催化剂和硅衬底之间生长纳米线。

17. 发明授权

US07015560B2 Light-receiving device, method for manufacturing the same, and optoelectronic integrated circuit comprising the same 有权
标题翻译：光接收装置及其制造方法以及包括该光接收装置的光电集成电路
公开(公告)号：US07015560B2
公开(公告)日：2006-03-21
申请号：US10779741
申请日：2004-02-18
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L31/075
CPC分类号： H01L27/1446
摘要： A light-receiving device, a method for manufacturing the same, and an optoelectronic integrated circuit including the same are provided. The light-receiving device includes a substrate; an intrinsic region formed on the substrate; a first region formed to a shallow depth in the intrinsic region; and a second region formed to a deep depth in the intrinsic region and distanced from the first region, wherein the first and second regions are doped with different conductivity types. The light-receiving device can shorten the transit time of holes with slow mobility. Therefore, no response delay occurs, and thus, a high response speed can be accomplished.
摘要翻译：提供了一种光接收装置及其制造方法和包括该光接收装置的光电集成电路。光接收装置包括：基板; 形成在所述基板上的本征区域; 在本征区域中形成为浅深度的第一区域; 以及第二区域，其形成为本征区域中的深度并与第一区域隔开，其中第一和第二区域掺杂有不同的导电类型。光接收装置可以缩短移动性差的穿孔时间。因此，没有响应延迟发生，因此可以实现高响应速度。

18. 发明申请

US20050092244A1 Diffusion system 失效
标题翻译：扩散系统
公开(公告)号：US20050092244A1
公开(公告)日：2005-05-05
申请号：US10912059
申请日：2004-08-06
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L21/223 , C23C8/06 , C23C16/44 , C23C16/448 , C23C16/452 , C23C16/54 , C30B31/06 , C30B31/10 , C30B31/16 , C30B35/00 , H01L21/22 , C23C16/00
CPC分类号： C30B31/10 , C23C8/06 , C30B31/06 , C30B31/165 , C30B35/00
摘要： Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.
摘要翻译：提供了一种用于在晶片中形成掺杂层的扩散系统。扩散系统包括用于产生掺杂气体的起泡器; 预混合器，其将掺杂气体与反应性气体预混合并预热气体混合物; 主室，其中气体混合物与晶片反应; 缓冲箱，其外部隔离排出口和用于将晶片装载和卸载的主体室; 以及在主室中反应完成后排出废气的废气排放系统。

19. 发明授权

US06697403B2 Light-emitting device and light-emitting apparatus using the same 有权
标题翻译：发光装置及使用其的发光装置
公开(公告)号：US06697403B2
公开(公告)日：2004-02-24
申请号：US10122416
申请日：2002-04-16
申请人： Eun-kyung Lee , Byoung-lyong Choi , Jae-ho You
发明人： Eun-kyung Lee , Byoung-lyong Choi , Jae-ho You
IPC分类号： H01S500
CPC分类号： H01L33/24 , H01L33/105 , H01L33/34 , H01L33/42 , H01L33/465
摘要： A light-emitting device and a light-emitting apparatus using the same. The light-emitting device includes an n-type or p-type substrate, a doped region formed on a first surface of the substrate with a predetermined dopant to be an opposite type from that of the substrate, to an ultra-shallow depth such that light is emitted from a p-n junction between the doped region and the substrate by a quantum confinement effect, a resonator which improves the selectivity of wavelength of the light emitted from the p-n junction, and first and second electrodes formed on the first surface and a second surface of the substrate, respectively, for injection of holes and electrons. The light-emitting device includes the ultra-shallow doped region so that it can emit light with a quantum confinement effect in the p-n junction. A resonator structure to resonate only a particular wavelength range of light is added to the light-emitting device so that the selectivity of light wavelength is markedly improved with excellent efficiency. The intensity of light emission is amplified by the resonator structure, and the directional property of the emitted light can be improved further than that of conventional light-emitting devices.
摘要翻译：发光装置和使用其的发光装置。发光器件包括n型或p型衬底，在衬底的第一表面上形成具有与衬底相反的预定掺杂剂的掺杂区域到超浅深度，使得光通过量子限制效应从掺杂区域和衬底之间的pn结发射，改善从pn结发射的光的波长的选择性的谐振器，以及形成在第一表面上的第一和第二电极分别用于注入空穴和电子的衬底的表面。发光器件包括超浅掺杂区域，使得其可以在p-n结中发射具有量子限制效应的光。仅在特定的光波长范围内谐振的谐振器结构被添加到发光器件中，从而以优异的效率显着地提高了光波长的选择性。通过谐振器结构放大发光强度，与现有的发光元件相比，能够进一步提高发光的取向性。

20. 外观设计

USD596217S1 Digital camera 有权
公开(公告)号：USD596217S1
公开(公告)日：2009-07-14
申请号：US29310149
申请日：2008-07-29
申请人： Tae-hwan Kim , Eun-kyung Lee
设计人： Tae-hwan Kim , Eun-kyung Lee

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