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11. 发明授权

US06470104B2 Method and apparatus for switching an optical beam by modulating the phase of a portion of the optical beam in a semiconductor substrate 有权
标题翻译：通过调制半导体衬底中的光束的一部分的相位来切换光束的方法和装置
公开(公告)号：US06470104B2
公开(公告)日：2002-10-22
申请号：US09735453
申请日：2000-12-12
申请人： Mario J. Paniccia , Dean A. Samara-Rubio , Ansheng Liu
发明人： Mario J. Paniccia , Dean A. Samara-Rubio , Ansheng Liu
IPC分类号： G02B626
CPC分类号： G02F1/025 , G02B2006/12145 , G02F1/2257 , G02F2001/0152 , G02F2201/16 , G02F2202/104
摘要： A device for switching an optical beam in an optical switch. In one embodiment, the disclosed optical switch includes an optical switching device disposed in a semiconductor substrate. The optical switch also includes a first optical path through the semiconductor substrate such that the first optical path includes the optical switching device. A second optical path through the semiconductor substrate is included such that the second optical path not including the optical switching device. A first optical confinement layer is disposed between the first and second optical paths.
摘要翻译：一种用于在光开关中切换光束的装置。在一个实施例中，所公开的光开关包括设置在半导体衬底中的光开关器件。光开关还包括通过半导体衬底的第一光路，使得第一光路包括光开关器件。包括穿过半导体衬底的第二光路，使得不包括光开关器件的第二光路。第一光限制层设置在第一和第二光路之间。

12. 发明申请

US20140367740A1 GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS 审中-公开
标题翻译：具有单独吸收和多样化区域的锗/硅玻璃光电转换器
公开(公告)号：US20140367740A1
公开(公告)日：2014-12-18
申请号：US14472241
申请日：2014-08-28
申请人： Micheal T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Micheal T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107 , H01L27/146
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

13. 发明授权

US07257283B1 Transmitter-receiver with integrated modulator array and hybrid bonded multi-wavelength laser array 有权
标题翻译：具有集成调制器阵列和混合键合多波长激光器阵列的发射器 - 接收器
公开(公告)号：US07257283B1
公开(公告)日：2007-08-14
申请号：US11480610
申请日：2006-06-30
申请人： Ansheng Liu , Mario J. Paniccia , Richard Jones
发明人： Ansheng Liu , Mario J. Paniccia , Richard Jones
IPC分类号： G02B6/12 , G02B6/28
CPC分类号： G02B6/12019 , G02B6/12004 , G02F1/2257 , H01S5/021 , H01S5/02248 , H01S5/1032 , H01S5/141 , H01S5/4087
摘要： An apparatus and method providing a plurality of modulated optical beams from a single layer of semiconductor material. For one example, an apparatus includes a plurality of optical waveguides disposed in a single layer of semiconductor material. Each one of the plurality of optical waveguides includes an optical cavity defined along the optical waveguide. A single bar of gain medium material adjoining the single layer of semiconductor material across the plurality of optical waveguides is included. The gain medium-semiconductor material interface is defined along each of the plurality of optical waveguides. A plurality of optical modulators is disposed in the single layer of semiconductor material. Each one of the plurality of optical modulators is optically coupled to a respective one of the plurality of optical waveguides to modulate a respective optical beam directed from the optical cavity.
摘要翻译：一种从单层半导体材料提供多个调制光束的装置和方法。作为一个示例，设备包括设置在单层半导体材料中的多个光波导。多个光波导中的每一个包括沿着光波导限定的光学腔。包括与多个光波导相邻的单层半导体材料的单条增益介质材料。沿着多个光波导中的每一个限定增益介质半导体材料界面。多个光学调制器设置在单层半导体材料中。多个光学调制器中的每一个光学耦合到多个光波导中的相应的一个光波导，以调制从光腔指向的相应光束。

14. 发明授权

US07142761B2 Method and apparatus for isolating an active region in an optical waveguide 有权
标题翻译：用于隔离光波导中的有源区的方法和装置
公开(公告)号：US07142761B2
公开(公告)日：2006-11-28
申请号：US10731559
申请日：2003-12-09
申请人： Ansheng Liu , Mario J. Paniccia
发明人： Ansheng Liu , Mario J. Paniccia
IPC分类号： G02B6/10
CPC分类号： G02F1/025 , G02F2201/063
摘要： An apparatus and method for modulating a phase of optical beam in an electrically isolated active region of an optical waveguide. In one embodiment, an apparatus according to embodiments of the present invention includes an active region of an optical waveguide disposed in a semiconductor layer. The active region includes a p doped region and an n doped region. The apparatus further includes an insulating region disposed in the semiconductor layer surrounding the active region in the semiconductor layer. The insulating region electrically isolates the active region of the optical waveguide from a passive region of the optical waveguide disposed in the semiconductor layer. An optical beam is to be directed through the optical waveguide and through the active region to be phase shifted in response to a modulated charge region in the active region in the optical waveguide.
摘要翻译：一种用于调制光波导的电隔离有源区中的光束相位的装置和方法。在一个实施例中，根据本发明的实施例的装置包括设置在半导体层中的光波导的有源区。有源区包括p掺杂区和n掺杂区。该装置还包括设置在半导体层中的绝缘区域，该半导体层围绕半导体层中的有源区域。绝缘区域将光波导的有源区域与设置在半导体层中的光波导的无源区域电隔离。光束将被引导通过光波导并且通过有源区域响应于光波导中的有源区域中的调制的电荷区域被相移。

15. 发明授权

US07088877B2 Method and apparatus for tuning a bragg grating in a semiconductor substrate 有权
公开(公告)号：US07088877B2
公开(公告)日：2006-08-08
申请号：US09881218
申请日：2001-06-13
申请人： Ansheng Liu , Mario J. Paniccia , Remus Nicolaescu
发明人： Ansheng Liu , Mario J. Paniccia , Remus Nicolaescu
IPC分类号： G02F1/295
CPC分类号： G02F1/025 , G02B6/124 , G02B2006/12097 , G02B2006/12135 , G02F1/0147 , G02F2201/307
摘要： A tunable Bragg grating method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes directing an optical beam into a first end of an optical path having the first end and a second end disposed in a semiconductor substrate, reflecting a first portion of the optical beam having a first center wavelength back out from the first end of the optical path and tuning the optical path to reflect a second portion of the optical beam having a second center wavelength back out from the first end of the optical path. In one embodiment, the Bragg grating is tuned with a heater used to adjust a temperature of the semiconductor substrate. In another embodiment, charge in charge modulated regions along the optical path is modulated to tune the Bragg grating.

16. 发明授权

US06603893B1 Method and apparatus for switching an optical beam in a semiconductor substrate 有权
标题翻译：用于切换半导体衬底中的光束的方法和装置
公开(公告)号：US06603893B1
公开(公告)日：2003-08-05
申请号：US09819160
申请日：2001-03-27
申请人： Ansheng Liu , Mario J. Paniccia , Dean A. Samara-Rubio , Chi Chu
发明人： Ansheng Liu , Mario J. Paniccia , Dean A. Samara-Rubio , Chi Chu
IPC分类号： G02B626
CPC分类号： G02F1/3136 , G02B6/2813 , G02F2001/217
摘要： An optical switching method and apparatus. In one aspect of the present invention, the disclosed apparatus includes first and second multi-mode interference (MMI) splitting devices in a semiconductor substrate. First and second outputs of the first MMI splitting device are optically coupled to first and second inputs, respectively, of the second MMI splitting device. First and second phase control devices are included in the semiconductor substrate. The first input of the second MMI splitting device is optically coupled to the first output of the first MMI splitting device through the first phase control device. The second input of the second MMI splitting device is optically coupled to the second output of the first MMI splitting device through the second phase control device. The first input of the first MMI splitting device is selectively optically coupled to the first and second outputs of the second MMI splitting device in response to the first and second phase control devices. The second input of the first MMI splitting device is selectively optically coupled to the first and second outputs of the second MMI splitting device in response to the first and second phase control devices.
摘要翻译：一种光学切换方法和装置。在本发明的一个方面，所公开的设备包括半导体衬底中的第一和第二多模干涉（MMI）分离器件。第一MMI分割装置的第一和第二输出分别光耦合到第二MMI分割装置的第一和第二输入。第一和第二相位控制装置包括在半导体衬底中。第二MMI分割装置的第一输入通过第一相位控制装置光耦合到第一MMI分配装置的第一输出端。第二MMI分配装置的第二输入通过第二相位控制装置光耦合到第一MMI分配装置的第二输出端。响应于第一和第二相位控制装置，第一MMI分配装置的第一输入选择性地光耦合到第二MMI分配装置的第一和第二输出端。响应于第一和第二相位控制装置，第一MMI分配装置的第二输入被选择性地光耦合到第二MMI分配装置的第一和第二输出端。

17. 发明授权

US08829566B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US08829566B2
公开(公告)日：2014-09-09
申请号：US11724805
申请日：2007-03-15
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107 , H01L31/18 , H01L31/028 , H01L31/0312
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

18. 发明授权

US08530818B2 Apparatus, method and system for providing reflection of an optical signal 有权
标题翻译：用于提供光信号反射的装置，方法和系统
公开(公告)号：US08530818B2
公开(公告)日：2013-09-10
申请号：US12825257
申请日：2010-06-28
申请人： John Heck , Ansheng Liu , Mario J. Paniccia
发明人： John Heck , Ansheng Liu , Mario J. Paniccia
IPC分类号： H03F3/08
CPC分类号： G02B6/4214 , G02B6/422
摘要： Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.
摘要翻译：用于提供集成电路管芯组件的反射目标区域的技术和架构。在一个实施例中，模具的反射斜面可允许从模组件的侧表面的方向接收光信号以反射到光电检测器中。在另一个实施例中，模具的联接表面中的一个或多个凹槽提供相应的杠杆点，用于将斜面的目标区域与光电检测器的检测表面对准。

19. 发明授权

US08338857B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US08338857B2
公开(公告)日：2012-12-25
申请号：US12870811
申请日：2010-08-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/028 , H01L31/0352
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

20. 发明申请

US20100320502A1 GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS 有权
标题翻译：具有单独吸收和多样化区域的锗/硅玻璃光电转换器
公开(公告)号：US20100320502A1
公开(公告)日：2010-12-23
申请号：US12870811
申请日：2010-08-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

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