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    • 14. 发明申请
    • Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating
    • 具有介质辅助平面化触点的异质结双极晶体管及其制造方法
    • US20060121669A1
    • 2006-06-08
    • US11227858
    • 2005-09-14
    • Richard PiersonJames LiBerinder BrarJohn Higgins
    • Richard PiersonJames LiBerinder BrarJohn Higgins
    • H01L21/84H01L21/00H01L21/8249
    • H01L29/66318H01L29/7371Y10S438/978
    • A heterojunction bipolar transistor (HBT) is disclosed that includes successive emitter, base and collector and sub-collector epitaxial layers and emitter, base and collector contact metals contacting the emitter, base and sub-collector layers respectively. A passivation material is included that covers the uncovered portions of the layers and covers substantially all of the contact metals. The passivation material has a planar surface and a portion of each of the contact metals protrudes from the surface. Planar metals are included on the planar surface, each being isolated from the others and in electrical contact with a respective contact metal. A method for fabricating an HBT is also disclosed, wherein successive emitter, base, collector and sub-collector epitaxial layers are deposited on a substrate, with the substrate being adjacent to the sub-collector layer. The epitaxial layers are etched to provide locations for contact metals and emitter, base and contact metals are deposited on the emitter, base and sub-collector epitaxial layers, respectively. A self-alignment material is deposited on the surface of the substrate around the epitaxial layers and a planarization material is deposited on and covers the top surface of the HBT. The planarization material is then etched so it has a planar surface about the same level as the surface of the self-alignment material and the contact metals protrude from the planar surface. The planar metals are then deposited over the protruding portions of the contact metals.
    • 公开了一种异质结双极晶体管(HBT),其包括连续的发射极,基极和集电极和子集电极外延层以及分别与发射极,基极和子集电极层接触的发射极,基极和集电极接触金属。 包括钝化材料,其覆盖层的未覆盖部分并覆盖基本上所有的接触金属。 钝化材料具有平坦表面,并且每个接触金属的一部分从表面突出。 平面金属包括在平面表面上,每个与其它表面分离,并与相应的接触金属电接触。 还公开了制造HBT的方法,其中连续的发射极,基极,集电极和亚集电极外延层沉积在衬底上,衬底与子集电极层相邻。 外延层被蚀刻以提供用于接触金属和发射极的位置,基极和接触金属分别沉积在发射极,基极和次集电极外延层上。 自对准材料沉积在外延层周围的衬底表面上,平坦化材料沉积在HBT的顶表面上并覆盖其上表面。 然后对平坦化材料进行蚀刻,使其具有与自对准材料的表面大致相同的平面,并且接触金属从平坦表面突出。 然后将平面金属沉积在接触金属的突出部分上。
    • 17. 发明授权
    • Systems and methods for dropping and/or adding phases in multiphase regulators
    • 用于在多相调节器中滴加和/或添加相的系统和方法
    • US08829872B1
    • 2014-09-09
    • US12503782
    • 2009-07-15
    • Richard PiersonBenjamim Tang
    • Richard PiersonBenjamim Tang
    • G05F1/00
    • H02M3/1584H02M1/14H02M1/36H02M2001/0032Y02B70/16
    • Methods and systems for dropping and/or adding phases in multiphase regulators according to various aspects of the present invention may operate in conjunction with multiple output circuits configured to deliver power to a load and a controller. The controller may be connected to each of the output circuits, such as to drive the output circuits. The controller may be adapted to selectively disable and/or enable phases. For example, the controller may disable one output circuit without disabling another output circuit. In addition, the controller may smoothly reduce the power delivered to the load by the output circuit prior to disabling it, for example to control output glitches.
    • 根据本发明的各个方面,用于丢弃和/或添加多相稳压器中的相的方法和系统可以与被配置为向负载和控制器输送功率的多个输出电路一起工作。 控制器可以连接到每个输出电路,例如驱动输出电路。 控制器可以适于选择性地禁用和/或使能相位。 例如,控制器可以禁用一个输出电路而不禁用另一个输出电路。 此外,控制器可以在禁用输出电路之前平滑地降低由输出电路输送到负载的功率,例如来控制输出毛刺。