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11. 发明申请

US20130069117A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20130069117A1
公开(公告)日：2013-03-21
申请号：US13619560
申请日：2012-09-14
申请人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito
发明人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito
IPC分类号： H01L29/778
CPC分类号： H01L29/2003 , H01L29/0619 , H01L29/1066 , H01L29/4236 , H01L29/42364 , H01L29/7787
摘要： A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.
摘要翻译：氮化物半导体器件包括衬底，第一In x1Ga1-x1-y1Aly1N层，第二Inx2Ga1-x2-y2Aly2N层，层间绝缘膜，源电极，漏电极，第一栅电极，肖特基电极，第二栅电极，互连层。第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。互连层电连接源电极，肖特基电极和第二栅电极。

12. 发明授权

US08203172B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08203172B2
公开(公告)日：2012-06-19
申请号：US12757528
申请日：2010-04-09
申请人： Wataru Saito , Yasunobu Saito , Takao Noda , Hidetoshi Fujimoto , Tetsuya Ohno
发明人： Wataru Saito , Yasunobu Saito , Takao Noda , Hidetoshi Fujimoto , Tetsuya Ohno
IPC分类号： H01L29/10 , H01L29/205
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/42316 , H01L29/7787
摘要： A nitride semiconductor device includes: a first layer made of a first nitride semiconductor; a second layer provided on the first layer and made of a second nitride semiconductor having a larger band gap than the first nitride semiconductor; a first electrode electrically connected to the second layer; a second electrode provided on the second layer and juxtaposed to the first electrode in a first direction; and a floating electrode provided on the second layer, the floating electrode including: a portion sandwiched by the second electrode in a second direction orthogonal to the first direction; and a portion protruding from the second electrode toward the first electrode.
摘要翻译：氮化物半导体器件包括：由第一氮化物半导体构成的第一层; 第二层，设置在第一层上，由与第一氮化物半导体相比具有更大带隙的第二氮化物半导体构成; 电连接到第二层的第一电极; 设置在所述第二层上并沿第一方向与所述第一电极并置的第二电极; 以及设置在所述第二层上的浮置电极，所述浮置电极包括：在与所述第一方向正交的第二方向上被所述第二电极夹持的部分; 以及从第二电极朝向第一电极突出的部分。

13. 发明授权

US07728354B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07728354B2
公开(公告)日：2010-06-01
申请号：US11939976
申请日：2007-11-14
申请人： Wataru Saito , Akira Yoshioka , Hidetoshi Fujimoto , Takao Noda , Yasunobu Saito , Tomohiro Nitta , Yorito Kakiuchi
发明人： Wataru Saito , Akira Yoshioka , Hidetoshi Fujimoto , Takao Noda , Yasunobu Saito , Tomohiro Nitta , Yorito Kakiuchi
IPC分类号： H01L21/338
CPC分类号： H01L29/045 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/41766 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device includes: a first semiconductor layer of p-type AlxGa1-xN (0≦x≦1); a second semiconductor layer of n-type AlyGa1-yN (0
摘要翻译：半导体器件包括：p型Al x Ga 1-x N（0＆amp; n 1; x＆n 1; 1）的第一半导体层; 在第一半导体层上形成的n型Al y Ga 1-y N（0

14. 发明授权

US07538366B2 Nitride semiconductor device 失效
标题翻译：氮化物半导体器件
公开(公告)号：US07538366B2
公开(公告)日：2009-05-26
申请号：US11739874
申请日：2007-04-25
申请人： Wataru Saito , Akira Yoshioka , Hidetoshi Fujimoto , Yasunobu Saito , Takao Noda , Tomohiro Nitta , Yorito Kakiuchi
发明人： Wataru Saito , Akira Yoshioka , Hidetoshi Fujimoto , Yasunobu Saito , Takao Noda , Tomohiro Nitta , Yorito Kakiuchi
IPC分类号： H01L27/088
CPC分类号： H01L29/7787 , H01L29/155 , H01L29/2003 , H01L29/7783
摘要： A nitride semiconductor device includes: a conductive substrate; a first semiconductor layer provided on the substrate; a second semiconductor layer provided on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a first main electrode connected to the third semiconductor layer; a second main electrode connected to the third semiconductor layer; and a control electrode provided on the third semiconductor layer. The first semiconductor layer is made of AlXGa1−XN (0≦X≦1) of a first conductivity type. The second semiconductor layer is made of a first nitride semiconductor. The third semiconductor layer is made of a second nitride semiconductor which is undoped or of n-type and has a wider bandgap than the first nitride semiconductor.
摘要翻译：氮化物半导体器件包括：导电衬底; 设置在所述基板上的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 第二半导体层上的第三半导体层; 连接到第三半导体层的第一主电极; 连接到第三半导体层的第二主电极; 以及设置在所述第三半导体层上的控制电极。第一半导体层由第一导电类型的AlXGa1-XN（0 <= X <= 1）制成。第二半导体层由第一氮化物半导体制成。第三半导体层由未掺杂或n型的具有比第一氮化物半导体更宽的带隙的第二氮化物半导体制成。

15. 发明申请

US20070254431A1 NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译：氮化物半导体器件
公开(公告)号：US20070254431A1
公开(公告)日：2007-11-01
申请号：US11739874
申请日：2007-04-25
申请人： Wataru Saito , Akira Yoshioka , Hidetoshi Fujimoto , Yasunobu Saito , Takao Noda , Tomohiro Nitta , Yorito Kakiuchi
发明人： Wataru Saito , Akira Yoshioka , Hidetoshi Fujimoto , Yasunobu Saito , Takao Noda , Tomohiro Nitta , Yorito Kakiuchi
IPC分类号： H01L29/06 , H01L21/8242 , H01L21/20
CPC分类号： H01L29/7787 , H01L29/155 , H01L29/2003 , H01L29/7783
摘要： A nitride semiconductor device includes: a conductive substrate; a first semiconductor layer provided on the substrate; a second semiconductor layer provided on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a first main electrode connected to the third semiconductor layer; a second main electrode connected to the third semiconductor layer; and a control electrode provided on the third semiconductor layer. The first semiconductor layer is made of AlXGa1−XN (0≦X≦1) of a first conductivity type. The second semiconductor layer is made of a first nitride semiconductor. The third semiconductor layer is made of a second nitride semiconductor which is undoped or of n-type and has a wider bandgap than the first nitride semiconductor.
摘要翻译：氮化物半导体器件包括：导电衬底; 设置在所述基板上的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 第二半导体层上的第三半导体层; 连接到第三半导体层的第一主电极; 连接到第三半导体层的第二主电极; 以及设置在所述第三半导体层上的控制电极。第一半导体层由第一导电类型的Al x Ga 1-X N（0 <= X 1 = 1）制成。第二半导体层由第一氮化物半导体制成。第三半导体层由未掺杂或n型的具有比第一氮化物半导体更宽的带隙的第二氮化物半导体制成。

16. 发明授权

US08390030B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08390030B2
公开(公告)日：2013-03-05
申请号：US12104818
申请日：2008-04-17
申请人： Wataru Saito , Hidetoshi Fujimoto , Takao Noda , Yasunobu Saito , Tomohiro Nitta
发明人： Wataru Saito , Hidetoshi Fujimoto , Takao Noda , Yasunobu Saito , Tomohiro Nitta
IPC分类号： H01L29/778
CPC分类号： H01L29/78 , H01L29/0619 , H01L29/0692 , H01L29/1033 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/778 , H01L29/7786 , H01L29/7787 , H01L29/8618 , H01L29/872
摘要： A semiconductor device includes: a first semiconductor layer made of an AlxGa1−xN (0≦×
摘要翻译：半导体器件包括：由Al x Ga 1-x N（0＆lt; n 1; x 1）制成的第一半导体层; 由第一半导体层提供并由未掺杂或第一导电类型的Al y Ga 1-y N（0

17. 发明申请

US20080277692A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080277692A1
公开(公告)日：2008-11-13
申请号：US12104818
申请日：2008-04-17
申请人： Wataru Saito , Hidetoshi Fujimoto , Takao Noda , Yasunobu Saito , Tomohiro Nitta
发明人： Wataru Saito , Hidetoshi Fujimoto , Takao Noda , Yasunobu Saito , Tomohiro Nitta
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L29/0619 , H01L29/0692 , H01L29/1033 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/778 , H01L29/7786 , H01L29/7787 , H01L29/8618 , H01L29/872
摘要： A semiconductor device includes: a first semiconductor layer made of an AlxGa1−xN (0≦x
摘要翻译：半导体器件包括：由Al x Ga 1-x N（0 <= x <1）构成的第一半导体层; 第二半导体层，设置在第一半导体层上，由未掺杂或第一导电型Al x Ga 1-y N（0

18. 发明授权

US08575656B2 Semiconductor device having nitride layers 失效
标题翻译：具有氮化物层的半导体器件
公开(公告)号：US08575656B2
公开(公告)日：2013-11-05
申请号：US13605814
申请日：2012-09-06
申请人： Akira Yoshioka , Yasunobu Saito , Wataru Saito
发明人： Akira Yoshioka , Yasunobu Saito , Wataru Saito
IPC分类号： H01L31/06 , H01L29/66
CPC分类号： H01L29/475 , H01L21/8252 , H01L27/0605 , H01L27/0676 , H01L27/0688 , H01L27/0727 , H01L29/2003 , H01L29/4175 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L29/872
摘要： According to one embodiment, a semiconductor device having a semiconductor substrate, first to fourth semiconductor layers of nitride, first to third electrodes and a gate electrode is provided. The first semiconductor layer is provided directly on the semiconductor substrate or on the same via a buffer layer. The second semiconductor layer is provided so as to be spaced apart from the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer and has a band gap wider than that of the second semiconductor layer. The fourth semiconductor layer insulates the first and second semiconductor layers. The first electrode forms an ohmic junction with the first to the third semiconductor layers. The second electrode is provided on the third semiconductor layer. The gate electrode is provided between the first and the second electrodes. The third electrode forms a Schottky junction with the first semiconductor layer.
摘要翻译：根据一个实施例，提供了具有半导体衬底，氮化物的第一至第四半导体层，第一至第三电极和栅电极的半导体器件。第一半导体层直接设置在半导体衬底上，或者经由缓冲层设置在其上。第二半导体层被设置为与第一半导体层间隔开。第三半导体层设置在第二半导体层上，并且具有比第二半导体层宽的带隙。第四半导体层使第一和第二半导体层绝缘。第一电极与第一至第三半导体层形成欧姆结。第二电极设置在第三半导体层上。栅电极设置在第一和第二电极之间。第三电极与第一半导体层形成肖特基结。

19. 发明申请

US20130248928A1 SEMICONDUCTOR DEVICE HAVING NITRIDE LAYERS 失效
标题翻译：具有氮化物层的半导体器件
公开(公告)号：US20130248928A1
公开(公告)日：2013-09-26
申请号：US13605814
申请日：2012-09-06
申请人： Akira YOSHIOKA , Yasunobu Saito , Wataru Saito
发明人： Akira YOSHIOKA , Yasunobu Saito , Wataru Saito
IPC分类号： H01L29/78
CPC分类号： H01L29/475 , H01L21/8252 , H01L27/0605 , H01L27/0676 , H01L27/0688 , H01L27/0727 , H01L29/2003 , H01L29/4175 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L29/872
摘要： According to one embodiment, a semiconductor device having a semiconductor substrate, first to fourth semiconductor layers of nitride, first to third electrodes and a gate electrode is provided. The first semiconductor layer is provided directly on the semiconductor substrate or on the same via a buffer layer. The second semiconductor layer is provided so as to be spaced apart from the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer and has a band gap wider than that of the second semiconductor layer. The fourth semiconductor layer insulates the first and second semiconductor layers. The first electrode forms an ohmic junction with the first to the third semiconductor layers. The second electrode is provided on the third semiconductor layer. The gate electrode is provided between the first and the second electrodes. The third electrode forms a Schottky junction with the first semiconductor layer.
摘要翻译：根据一个实施例，提供了具有半导体衬底，氮化物的第一至第四半导体层，第一至第三电极和栅电极的半导体器件。第一半导体层直接设置在半导体衬底上，或者经由缓冲层设置在其上。第二半导体层被设置为与第一半导体层间隔开。第三半导体层设置在第二半导体层上，并且具有比第二半导体层宽的带隙。第四半导体层使第一和第二半导体层绝缘。第一电极与第一至第三半导体层形成欧姆结。第二电极设置在第三半导体层上。栅电极设置在第一和第二电极之间。第三电极与第一半导体层形成肖特基结。

20. 发明申请

US20120187452A1 SEMICONDUCTOR ELEMENT 失效
标题翻译：半导体元件
公开(公告)号：US20120187452A1
公开(公告)日：2012-07-26
申请号：US13239229
申请日：2011-09-21
申请人： Wataru Saito , Hidetoshi Fujimoto
发明人： Wataru Saito , Hidetoshi Fujimoto
IPC分类号： H01L29/78 , H01L29/205
CPC分类号： H01L29/42316 , H01L29/1066 , H01L29/2003 , H01L29/4236 , H01L29/66462 , H01L29/7781
摘要： According to one embodiment, the semiconductor element includes a first semiconductor layer. The first semiconductor layer contains AlXGa1-XN. A top layer of the first semiconductor layer is terminated by nitrogen. The semiconductor element includes a second semiconductor layer containing non-doped or first conductivity-type AlYGa1-YN formed on the first semiconductor layer. The semiconductor element includes a third semiconductor layer containing AlZGa1-ZN formed on the second semiconductor layer. The semiconductor element includes a first major electrode connected to the third semiconductor layer. The semiconductor element includes a second major electrode connected to the third semiconductor layer. The semiconductor element includes a gate electrode provided on the third semiconductor layer between the first major electrode and the second major electrode.
摘要翻译：根据一个实施例，半导体元件包括第一半导体层。第一半导体层包含AlXGa1-XN。第一半导体层的顶层由氮端接。半导体元件包括形成在第一半导体层上的含有非掺杂或第一导电型AlYGa1-YN的第二半导体层。半导体元件包括形成在第二半导体层上的含有AlZGa1-ZN的第三半导体层。半导体元件包括连接到第三半导体层的第一主电极。半导体元件包括连接到第三半导体层的第二主电极。半导体元件包括设置在第一主电极和第二主电极之间的第三半导体层上的栅电极。

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