专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5661068A Method of fabricating a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5661068A
公开(公告)日：1997-08-26
申请号：US467290
申请日：1995-06-06
申请人： Shuji Hirao , Hisashi Ogawa , Yuka Terai , Mitsuru Sekiguchi , Masanori Fukumoto , Isao Miyanaga
发明人： Shuji Hirao , Hisashi Ogawa , Yuka Terai , Mitsuru Sekiguchi , Masanori Fukumoto , Isao Miyanaga
IPC分类号： H01L21/02 , H01L21/3213 , H01L21/768 , H01L21/265
CPC分类号： H01L28/84 , H01L21/3213 , H01L21/32131 , H01L21/76838 , Y10S148/014 , Y10S438/964
摘要： A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.
摘要翻译：本发明的制造半导体器件的方法包括以下步骤：在硅上形成具有不均匀厚度的氧化膜; 使用含有金属元素的气体还原至少一部分氧化物膜，并且通过使硅的暴露表面与气体反应，在硅上生长含有金属元素的金属膜; 并除去金属膜。

12. 发明授权

US5474949A Method of fabricating capacitor or contact for semiconductor device by forming uneven oxide film and reacting silicon with metal containing gas 失效
标题翻译：通过形成不均匀的氧化膜并使硅与含金属的气体反应来制造用于半导体器件的电容器或接触器的方法
公开(公告)号：US5474949A
公开(公告)日：1995-12-12
申请号：US9583
申请日：1993-01-26
申请人： Shuji Hirao , Hisashi Ogawa , Yuka Terai , Mitsuru Sekiguchi , Masanori Fukumoto , Isao Miyanaga
发明人： Shuji Hirao , Hisashi Ogawa , Yuka Terai , Mitsuru Sekiguchi , Masanori Fukumoto , Isao Miyanaga
IPC分类号： H01L21/02 , H01L21/3213 , H01L21/768 , H01L21/473
CPC分类号： H01L28/84 , H01L21/3213 , H01L21/32131 , H01L21/76838 , Y10S148/014 , Y10S438/964
摘要： A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.
摘要翻译：本发明的制造半导体器件的方法包括以下步骤：在硅上形成具有不均匀厚度的氧化膜; 使用含有金属元素的气体还原至少一部分氧化物膜，并且通过使硅的暴露表面与气体反应，在硅上生长含有金属元素的金属膜; 并除去金属膜。

13. 发明授权

US4550923A Fuel supplying means installed on a lateral cross member of a vehicle 失效
标题翻译：燃料供给装置安装在车辆的横向横梁上
公开(公告)号：US4550923A
公开(公告)日：1985-11-05
申请号：US578119
申请日：1984-02-08
申请人： Hisashi Ogawa , Yasushi Tanaka , Yoshimitsu Sato
发明人： Hisashi Ogawa , Yasushi Tanaka , Yoshimitsu Sato
IPC分类号： B60K15/04 , B60K15/073 , B62D25/20
CPC分类号： B60K15/073 , B60K15/04 , Y10T137/6892
摘要： Fuel supplying means for supplying fuel into a fuel tank provided under a floor tunnel for use in a front engine-front wheel drive vehicle or a rear engine-rear wheel drive type vehicle. The fuel supplying means includes an inner filler pipe connected to the fuel tank and an outer filler pipe extending along a cross member located across the vehicle. An inner end of the outer filler pipe is connected through a hose to the inner filler pipe. The outer filler pipe has a bracket for fastening the outer filler pipe to the vehicle body.
摘要翻译：用于将燃料供给到设置在用于前发动机前轮驱动车辆或后发动机 - 后轮驱动型车辆的地板通道下方的燃料箱中的燃料供给装置。燃料供给装置包括连接到燃料箱的内部填充管和沿着横跨车辆的横向构件延伸的外部填充管。外部填充管的内端通过软管连接到内部填充管。外部填充管具有用于将外部填充管紧固到车身的支架。

14. 发明授权

US4473243A Shoulder webbing anchoring device 失效
标题翻译：肩带固定装置
公开(公告)号：US4473243A
公开(公告)日：1984-09-25
申请号：US343475
申请日：1982-01-28
申请人： Hisashi Ogawa
发明人： Hisashi Ogawa
IPC分类号： B60R22/04 , B60R22/20 , B60R22/24 , B60R22/32 , B60R21/00
CPC分类号： B60R22/20 , B60R22/24
摘要： A shoulder webbing anchoring device according to the present invention includes a side anchor fixed on a window frame or a side wall of a vehicle body and a webbing anchor holding one end of the webbing and coupled to the side anchor through an anchor pin having an enlarged head. The side anchor has small and large diameter holes partially overlapping each other, the small diameter hole being smaller than the enlarged head and the large diameter hole being larger than the enlarged head, whereby when the anchor pin is in the small diameter hole, the webbing anchor is rotatably coupled with the side anchor, and when the anchor pin is in the large diameter hole, the webbing anchor is allowed to be separated from the side anchor.
摘要翻译：根据本发明的肩带式固定装置包括固定在车体框架或车体侧壁上的侧固定件，以及安装在织带的一端并且通过锚定销连接到侧锚的织带锚固件，头。侧锚具有部分重叠的小直径孔，小直径孔小于扩大头部，大直径孔大于扩大头部，由此当锚销在小直径孔中时，织带锚固体与侧锚可旋转地联接，并且当锚定销在大直径孔中时，允许织带锚与侧锚分离。

15. 发明授权

US4345780A Automatic seatbelt system 失效
标题翻译：自动安全带系统
公开(公告)号：US4345780A
公开(公告)日：1982-08-24
申请号：US148037
申请日：1980-05-08
申请人： Shigeru Moriya , Hisashi Ogawa , Mitsuaki Katsono
发明人： Shigeru Moriya , Hisashi Ogawa , Mitsuaki Katsono
IPC分类号： B60R22/04 , B60R21/02
CPC分类号： B60R22/04
摘要： When leaving a vehicle, an occupant turns forwardly in the vehicle a guide lever, through which extends a webbing, one end of which is engaged with a vehicle door and the other end of which is wound up into a retractor provided at the substantially central portion of the vehicle, to thereby enlarge a space formed between the webbing and a seat. This release lever is locked in a condition of being turned forwardly in the vehicle. However, the release lever is unlocked after the occupant enters the vehicle and before the vehicle enters the normal running condition, thereby enabling to bring the occupant into a suitable seatbelt fastened condition.
摘要翻译：当离开车辆时，乘客在车辆中向前转动导引杆，通过该引导杆延伸织带，其一端与车门接合，另一端卷绕在设置在大致中央部分的牵开器从而扩大了在织带和座椅之间形成的空间。该释放杆被锁定在车辆中向前转动的状态。然而，释放杆在乘客进入车辆之后并且在车辆进入正常行驶状态之前解锁，从而能够使乘客进入合适的安全带紧固状态。

16. 发明授权

US4325569A Emergency locking device 失效
标题翻译：紧急锁定装置
公开(公告)号：US4325569A
公开(公告)日：1982-04-20
申请号：US184881
申请日：1980-09-08
申请人： Ichiro Suzuki , Masanao Motonami , Hisashi Ogawa
发明人： Ichiro Suzuki , Masanao Motonami , Hisashi Ogawa
IPC分类号： B60R22/06 , A62B35/02
CPC分类号： B60R22/06
摘要： One end of an occupant restraining webbing is secured to a slider, and driving means moves said slider in a guide groove formed in a guide rail, so that an occupant can be automatically brought into a webbing fastened state. The slider, being provided at the head thereof with a shoe, moves smoothly. Said shoe is adapted to be damaged under a predetermined value of load in an emergency of the vehicle, so that the head of slider can be pressed against said guide groove to prevent the slider from moving, thereby securing the occupant in the restrained state.
摘要翻译：乘员约束用织带的一端固定在滑块上，驱动装置使形成在导轨上的导向槽中的滑块移动，使乘员能够自动进入带状紧固状态。在其头部设置有鞋的滑块平稳地移动。所述鞋适用于在车辆的紧急情况下在预定的负载值下被损坏，使得滑块的头部可以被压靠在所述引导槽上，以防止滑块移动，从而将乘员固定在限制状态。

17. 发明授权

US4268068A Passive seatbelt system 失效
标题翻译：被动安全带系统
公开(公告)号：US4268068A
公开(公告)日：1981-05-19
申请号：US37151
申请日：1979-05-08
申请人： Ichiro Suzuki , Hisashi Ogawa , Masanao Motonami
发明人： Ichiro Suzuki , Hisashi Ogawa , Masanao Motonami
IPC分类号： B60R22/06 , B60R21/10
CPC分类号： B60R22/06
摘要： A seatbelt system of the type including a seatbelt, a flexible tape having a plurality of holes along its length and which is coupled to the seatbelt to cause the seatbelt to automatically fasten and unfasten from a passenger and a moving means for causing movement of the flexible tape. The moving means includes a sprocket housing having a substantially circular recess formed therein, a sprocket wheel provided in a portion of the flexible tape, a pair of tape passage shaped channel which is formed in the housing and accommodates the portion of the flexible tape, a pair of tape passage channels which are formed in the sprocket housing tangential to the arc-shaped channel and which are oriented in opposite directions and a driving means for selectively rotating the sprocket a predetermined number of rotation in a clockwise and counterclockwise direction.
摘要翻译：一种安全带系统，包括安全带，柔性带，沿其长度具有多个孔，并且连接到安全带，以使安全带自动地紧固和松开乘客;以及移动装置，用于使柔性胶带。移动装置包括：链轮壳体，其具有形成在其中的基本上圆形的凹部，设置在柔性带的一部分中的链轮;一对带通道形状的通道，其形成在壳体中并容纳柔性带的一部分; 一对带通道通道，其形成在与圆弧形通道相切并且相反方向定向的链轮壳体中;以及驱动装置，用于选择性地使链轮沿顺时针和逆时针方向旋转预定数量的旋转。

18. 发明授权

US08445096B2 Vehicle window glass and manufacturing method therefor 有权
标题翻译：车窗玻璃及其制造方法
公开(公告)号：US08445096B2
公开(公告)日：2013-05-21
申请号：US12087758
申请日：2007-01-11
申请人： Takashi Muromachi , Hisashi Ogawa , Mamoru Yoshida , Nobuki Iwai
发明人： Takashi Muromachi , Hisashi Ogawa , Mamoru Yoshida , Nobuki Iwai
IPC分类号： B32B3/00 , B32B23/02 , B32B17/06
CPC分类号： B60J1/00 , C03C17/002 , C03C17/007 , C03C17/009 , C03C17/366 , C03C2217/216 , C03C2217/23 , C03C2217/231 , C03C2217/24 , C03C2217/283 , C03C2217/29 , C03C2217/475 , C03C2217/476 , C03C2217/948 , C03C2218/114 , Y10T428/24479 , Y10T428/24612 , Y10T428/24777
摘要： A glass substrate is held by a glass substrate holding member in the vertical direction, and a nozzle is used to eject an infrared cutoff liquid onto the upper portion of the glass substrate. The infrared cutoff liquid flows vertically downward so as to be applied onto the glass substrate. The film thickness of the lower portion of an infrared cutoff film is greater than that of the upper portion. The glass substrate is dried for approximately five minutes at room temperature. Then, the glass substrate onto which the infrared cutoff liquid has been applied is placed in an oven preheated to 200° C., heated for ten minutes, and then cooled. The glass substrate having the infrared cutoff film thereon is installed in a railroad vehicle such that the lower portion of the glass substrate is located on the lower side with respect to the railroad vehicle.
摘要翻译：玻璃基板由玻璃基板保持部件沿垂直方向保持，并且使用喷嘴将红外线截止液喷射到玻璃基板的上部。红外截止液体垂直向下流动以便施加到玻璃基板上。红外截止膜的下部的膜厚度大于上部的膜厚。将玻璃基板在室温下干燥约5分钟。然后，将其上施加有红外线截止液体的玻璃基板放置在预热至200℃的烘箱中，加热10分钟，然后冷却。其上具有红外截止膜的玻璃基板安装在铁路车辆中，使得玻璃基板的下部相对于铁路车辆位于下侧。

19. 发明授权

US08004044B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08004044B2
公开(公告)日：2011-08-23
申请号：US12473710
申请日：2009-05-28
申请人： Hisashi Ogawa , Yoshihiro Mori
发明人： Hisashi Ogawa , Yoshihiro Mori
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L21/28088 , H01L21/823842 , H01L21/82385 , H01L29/4966 , H01L29/517 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device including a first transistor of a first conductivity type provided on a first active region of a semiconductor region, and a second transistor of a second conductivity type provided on a second active region of the semiconductor region. The first transistor includes a first gate insulating film and a first gate electrode, the first gate insulating film contains a high-k material and a first metal, and the first gate electrode includes a lower conductive film, a first conductive film and a first silicon film. The second transistor includes a second gate insulating film and a second gate electrode, the second gate insulating film contains a high-k material and a second metal, and the second gate electrode includes a second conductive film made of the same material as the first conductive film, and a second silicon film.
摘要翻译：一种半导体器件，包括设置在半导体区域的第一有源区上的第一导电类型的第一晶体管和设置在半导体区域的第二有源区上的第二导电类型的第二晶体管。第一晶体管包括第一栅极绝缘膜和第一栅电极，第一栅极绝缘膜包含高k材料和第一金属，并且第一栅电极包括下导电膜，第一导电膜和第一硅电影。第二晶体管包括第二栅极绝缘膜和第二栅电极，第二栅极绝缘膜包含高k材料和第二金属，第二栅极包括由与第一导电性材料相同的材料制成的第二导电膜膜和第二硅膜。

20. 发明授权

US07977800B2 Semiconductor device and fabrication method for the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07977800B2
公开(公告)日：2011-07-12
申请号：US12247518
申请日：2008-10-08
申请人： Tsutomu Oosuka , Hisashi Ogawa , Yoshihiro Sato
发明人： Tsutomu Oosuka , Hisashi Ogawa , Yoshihiro Sato
IPC分类号： H01L21/8234
CPC分类号： H01L23/535 , H01L21/28518 , H01L21/28525 , H01L21/76895 , H01L21/823425 , H01L21/823468 , H01L21/823475 , H01L27/11 , H01L29/161 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer.
摘要翻译：半导体器件包括：晶体管，其具有形成在半导体衬底上的栅极电极和形成在半导体衬底的位于栅电极两侧的部分中的第一和第二源极/漏极区域; 形成在相对于第一源极/漏极区域的与栅电极相对的位置处的栅极互连; 以及形成在所述第一源极/漏极区域上以在所述半导体衬底的顶表面上方突出的第一硅 - 锗层。栅极互连和第一源极/漏极区域经由包括第一硅 - 锗层的局部互连结构连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式