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11. 发明申请

US20090272972A1 ZnO BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE METHOD 有权
标题翻译：基于ZnO的半导体发光器件及其制造方法
公开(公告)号：US20090272972A1
公开(公告)日：2009-11-05
申请号：US12501764
申请日：2009-07-13
申请人： Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
发明人： Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
IPC分类号： H01L33/00
CPC分类号： H01L21/02433 , H01L21/0237 , H01L21/02403 , H01L21/02472 , H01L21/02554 , H01L21/02557 , H01L21/02609 , H01L21/02631 , H01L33/28
摘要： A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.
摘要翻译： ZnO基半导体发光器件包括：含有ZnO1-x1Sx1的第一半导体层; 形成在第一半导体层之上并含有ZnO1-x2Sx2的第二半导体层; 以及第三半导体层，其形成在所述第二半导体层的上方并且包含ZnO1-x3Sx3，其中所述第一半导体层的S组成x1，所述第二半导体层的S组成x2和所述第三半导体层的S组成x3被选择导带下端的第二半导体层的能量变得低于导带下端的第一和第三半导体层的能量的两者的能量，并且第二半导体层在上端的能量的价带变得高于在价带上端的第一和第三半导体层的能量的两个能量。

12. 发明授权

US08039867B2 ZnO-containing semiconductor layer, its manufacture method, and semiconductor light emitting device 有权
标题翻译：含ZnO半导体层，其制造方法和半导体发光装置
公开(公告)号：US08039867B2
公开(公告)日：2011-10-18
申请号：US12540772
申请日：2009-08-13
申请人： Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Naochika Horio , Hiroshi Kotani , Tomofumi Yamamuro
发明人： Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Naochika Horio , Hiroshi Kotani , Tomofumi Yamamuro
IPC分类号： H01L33/00
CPC分类号： H01S5/347 , B82Y20/00 , H01L33/285
摘要： A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.
摘要翻译：掺有Se的含ZnO半导体层在视觉上具有发光峰值波长，并且具有与ZnO的带隙相当的带隙。

13. 发明授权

US07968363B2 Manufacture method for ZnO based semiconductor crystal and light emitting device using same 有权
标题翻译：基于ZnO的半导体晶体的制造方法和使用它的发光器件
公开(公告)号：US07968363B2
公开(公告)日：2011-06-28
申请号：US12749401
申请日：2010-03-29
申请人： Hiroshi Kotani , Michihiro Sano , Hiroyuki Kato , Akio Ogawa
发明人： Hiroshi Kotani , Michihiro Sano , Hiroyuki Kato , Akio Ogawa
IPC分类号： H01L21/20
CPC分类号： H01L21/02576 , H01L21/0237 , H01L21/02403 , H01L21/02433 , H01L21/02472 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/02631 , H01L33/0083
摘要： A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. @(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer. @(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).
摘要翻译：一种氧化锌（ZnO）系半导体晶体的制造方法，其特征在于，提供具有Zn极性面的基板，并且在所述衬底的Zn极性平面上使至少锌（Zn）和氧（O）反应，以在富锌条件下在所述衬底的Zn极性平面上生长ZnO基半导体晶体。（a）在基板的Zn极性平面上形成n型ZnO缓冲层。（b）在n型ZnO缓冲层的表面上形成n型ZnO层。（c）在n型ZnO层的表面上形成n型ZnMgO层。（d）通过交替层叠ZnO层和ZnMgO层，在n型ZnMgO层的表面上形成ZnO / ZnMgO量子阱层。（e）在ZnO / ZnMgO量子阱层的表面上形成p型ZnMgO层。（f）在p型ZnMgO层的表面上形成p型ZnO层。（g）在n型ZnO层和p型ZnO层上形成电极。在步骤（b），在富锌条件下形成n型ZnO层。

14. 发明授权

US07728347B2 ZnO layer and semiconductor light emitting device 有权
标题翻译： ZnO层和半导体发光器件
公开(公告)号：US07728347B2
公开(公告)日：2010-06-01
申请号：US12428567
申请日：2009-04-23
申请人： Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
发明人： Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
IPC分类号： H01L29/24 , H01L33/00 , H01L21/20 , H01L21/36 , H01L21/04
CPC分类号： H01L33/285 , H01L21/0237 , H01L21/02433 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L33/16 , Y10S438/914 , Y10S438/918
摘要： A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.
摘要翻译：提供了可以获得长于蓝色（例如420nm）的波长的发光并具有新颖结构的ZnO层。通过将S掺杂到ZnO层中可以获得比ZnO的带隙窄0.6eV或更大的过渡能。

15. 发明申请

US20090206333A1 ZnO BASED SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD 有权
标题翻译：基于ZnO的半导体器件及其制造方法
公开(公告)号：US20090206333A1
公开(公告)日：2009-08-20
申请号：US12371965
申请日：2009-02-17
申请人： Hiroshi Kotani , Michihiro Sano , Hiroyuki Kato , Naochika Horio , Akio Ogawa , Tomofumi Yamamuro
发明人： Hiroshi Kotani , Michihiro Sano , Hiroyuki Kato , Naochika Horio , Akio Ogawa , Tomofumi Yamamuro
IPC分类号： H01L29/786 , H01L21/18
CPC分类号： H01L33/28 , H01L24/45 , H01L33/44 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2224/8592 , H01L2924/01322 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.
摘要翻译：一种ZnO基半导体器件包括：层叠结构，其包括第一半导体层，其包含第一导电类型的ZnO基半导体和包含与第一导电类型相反的第二导电类型的ZnO基半导体的第二半导体层，形成在第一半导体并与第一半导体层一起形成pn结; 以及包含Zn，Si和O化合物的Zn-Si-O层，并覆盖暴露层压结构的pn结的表面。

16. 发明授权

US07221003B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07221003B2
公开(公告)日：2007-05-22
申请号：US11276834
申请日：2006-03-16
申请人： Kazuhiko Ueno , Hiroshi Kotani
发明人： Kazuhiko Ueno , Hiroshi Kotani
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/46 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device can include a blue LED chip that is covered in a sealing resin composed of a filling resin mixed with a wavelength conversion material, such as a yellow fluorescent material. Light from the blue LED chip is mixed with a light from the yellow fluorescent material to obtain white light emission having a mixed color. The sealing resin has a light emission surface, which can be symmetrical about the normal line passing through the center of the blue LED chip. An optical multi-layered film including layered high- and low-refractive index films can be provided on the light emission surface.
摘要翻译：发光装置可以包括蓝色LED芯片，其被由与诸如黄色荧光材料的波长转换材料混合的填充树脂组成的密封树脂中覆盖。来自蓝色LED芯片的光与来自黄色荧光材料的光混合以获得具有混合颜色的白色发光。密封树脂具有发光面，其可以通过蓝色LED芯片的中心的法线对称。可以在光发射表面上设置包括层状高折射率膜和低折射率膜的光学多层膜。

17. 发明授权

US06291262B1 Surface mount TO-220 package and process for the manufacture thereof 有权
标题翻译：表面贴装TO-220封装及其制造方法
公开(公告)号：US06291262B1
公开(公告)日：2001-09-18
申请号：US09563358
申请日：2000-05-03
申请人： Hisao Udagawa , Hiroshi Kotani
发明人： Hisao Udagawa , Hiroshi Kotani
IPC分类号： H05K334
CPC分类号： H01L23/49562 , H01L23/3121 , H01L24/45 , H01L24/48 , H01L24/97 , H01L2224/05599 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/484 , H01L2924/00014 , H01L2924/01005 , H01L2924/01077 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2224/45099 , H01L2924/00 , H01L2924/00012 , H01L2224/85399
摘要： A surface mount TO-220 package includes leads which are bent within the molded housing and formed prior to molding the housing around the lead frame. A single gauge of frame material is used for both the leads and the main pad area. The bends reduce the height of the package and reduce mechanical stresses in the molded housing.
摘要翻译：表面安装的TO-220封装包括在模制壳体内弯曲并且在围绕引线框架模制壳体之前形成的引线。引脚和主焊盘区域均使用单个框架材料。弯曲减小了包装的高度并降低了模制外壳中的机械应力。

18. 发明申请

US20060208268A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20060208268A1
公开(公告)日：2006-09-21
申请号：US11276834
申请日：2006-03-16
申请人： Kazuhiko Ueno , Hiroshi Kotani
发明人： Kazuhiko Ueno , Hiroshi Kotani
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/46 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device can include a blue LED chip that is covered in a sealing resin composed of a filling resin mixed with a wavelength conversion material, such as a yellow fluorescent material. Light from the blue LED chip is mixed with a light from the yellow fluorescent material to obtain white light emission having a mixed color. The sealing resin has a light emission surface, which can be symmetrical about the normal line passing through the center of the blue LED chip. An optical multi-layered film including layered high- and low-refractive index films can be provided on the light emission surface.
摘要翻译：发光装置可以包括蓝色LED芯片，其被由与诸如黄色荧光材料的波长转换材料混合的填充树脂组成的密封树脂中覆盖。来自蓝色LED芯片的光与来自黄色荧光材料的光混合以获得具有混合颜色的白色发光。密封树脂具有发光面，其可以通过蓝色LED芯片的中心的法线对称。可以在光发射表面上设置包括层状高折射率膜和低折射率膜的光学多层膜。

19. 发明授权

US08546827B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08546827B2
公开(公告)日：2013-10-01
申请号：US12960281
申请日：2010-12-03
申请人： Takahiko Nozaki , Hiroshi Kotani
发明人： Takahiko Nozaki , Hiroshi Kotani
IPC分类号： H01L21/00
CPC分类号： H01L33/644 , H01L33/50 , H01L33/60 , H01L33/641 , H01L33/642 , H01L2924/0002 , H01L2933/0075 , H01L2924/00
摘要： A light emitting device that can radiate heat generated by a semiconductor light emitting element and/or a resin layer at not only a position directly under the light emitting element, but also a position remote from such a position with respect to the main plane direction is provided. In the light emitting device, a light emitting element is carried on a substrate, and a resin covers the light emitting element. An anisotropic heat conduction material showing a heat conductivity for the substrate main plane direction larger than that for the substrate thickness direction is carried on the substrate. A side of the anisotropic heat conduction material contacts with the resin. Thereby, the anisotropic heat conduction material can receive heat of the resin, conduct it along the main plane direction, and radiate it to the substrate at a position remote from the light emitting element and/or the resin. As the anisotropic heat conduction material, for example, one or more laminated layers of graphite in the form of sheet are used.
摘要翻译：可以在不仅在发光元件正下方的位置而且能够相对于主平面方向远离这种位置的位置辐射由半导体发光元件和/或树脂层产生的热的发光器件，提供。在发光装置中，发光元件承载在基板上，树脂覆盖发光元件。在基板上承载表现出比基板厚度方向大的基板主面方向的导热性的各向异性导热材料。各向异性热传导材料的一面与树脂接触。由此，各向异性热传导材料可以接收树脂的热量，沿着主平面方向导电，并在远离发光元件和/或树脂的位置将其辐射到基板。作为各向异性热传导材料，例如可以使用片状的一层以上的石墨层叠体。

20. 发明授权

US08508118B2 Light emitting device that suppresses color unevenness 有权
标题翻译：抑制颜色不均匀的发光装置
公开(公告)号：US08508118B2
公开(公告)日：2013-08-13
申请号：US13427849
申请日：2012-03-22
申请人： Hiroshi Kotani , Takaaki Sakai
发明人： Hiroshi Kotani , Takaaki Sakai
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L33/505 , H01L25/0753 , H01L33/50 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48465 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device that suppresses color unevenness can be provided. A transparent member can be disposed on a fluorescence-containing resin layer. Part of excitation light can be emitted upward from an edge surface of the fluorescence-containing resin layer directly and without passing through the transparent member. Thus, fluorescent light emitted in large quantities from a place near an edge surface of the transparent member can be mixed with the excitation light emitted from the edge surface of the fluorescence-containing resin layer directly without passing through the transparent member, thereby suppressing color unevenness at a location near the edge surface of the transparent member.
摘要翻译：可以提供抑制颜色不均匀性的发光装置。透明构件可以设置在含荧光的树脂层上。激发光的一部分可以直接从含荧光的树脂层的边缘表面向上发射而不通过透明构件。因此，从透明构件的边缘表面附近的地方大量发出的荧光可以直接与含荧光的树脂层的边缘表面发射的激发光混合而不通过透明构件，从而抑制颜色不均匀在透明构件的边缘表面附近。

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