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    • 12. 发明授权
    • Thin film forming method and thin film forming apparatus
    • 薄膜形成方法和薄膜形成装置
    • US06383896B1
    • 2002-05-07
    • US09661809
    • 2000-09-14
    • Hiroya KirimuraNaoto KurataniKiyoshi Ogata
    • Hiroya KirimuraNaoto KurataniKiyoshi Ogata
    • H01L2120
    • C23C16/45565C23C16/452C23C16/509C23C16/517H01J37/32009H01J37/32422
    • In a thin film forming method and an apparatus A for implementing the method, a deposition chamber 1 provided with a substrate holder 12 and a radical emitting device 2 continuing to the chamber 1 for emitting neutral radicals uniformly to a whole deposition target region of a deposition target substrate S held by the holder 12 are used. Deposition gas plasma PL1 is formed at the vicinity of the substrate S on the holder 12 by supplying a predetermined deposition gas into the chamber 1. Neutral radicals RA are produced by exciting and dissociating a predetermined radical material gas in the radical emitting device 2, and the radicals are uniformly emitted to the deposition target region of the substrate S for forming a predetermined thin film on the substrate S.
    • 在用于实现该方法的薄膜形成方法和装置A中,沉积室1设置有基板保持器12和连续到室1的自由基发射装置2,用于均匀地向沉积物的整个沉积靶区域发射中性自由基 使用由保持器12保持的目标基板S. 通过将预定的沉积气体供应到室1中,在保持器12上的基板S的附近形成沉积气体等离子体PL1。通过激发和解离自由基发射装置2中的预定自由基原料气体来产生中性自由基RA,以及 该基团被均匀地发射到基板S的沉积靶区域,以在衬底S上形成预定的薄膜。
    • 19. 发明授权
    • Semiconductor device and microphone
    • 半导体器件和麦克风
    • US08295515B2
    • 2012-10-23
    • US13033818
    • 2011-02-24
    • Naoto KurataniKazuyuki OnoTomofumi Maekawa
    • Naoto KurataniKazuyuki OnoTomofumi Maekawa
    • H04R25/00
    • H04R19/04H01L2224/48091H01L2224/48137H01L2224/49171H01L2224/73265H01L2924/1461H01L2924/3025H04R19/005H04R31/00H01L2924/00014H01L2924/00
    • The semiconductor device has a simplified structure which includes a package structure in which a member for mounting a semiconductor element is separate from a member including a signal input/output unit. A microphone package is configured with a cover and a substrate. A microphone chip and a circuit element are adhered and fixed to a top surface of a recess formed in the cover. A plurality of bonding pads are arranged on the lower surface of the cover on the outer side of the recess. A bonding wire is connected to the circuit element and the bonding pad. The substrate includes a signal input/output terminal serving as the signal input/output unit, and a connection electrode, conducted with the signal input/output terminal, is arranged facing the bonding pad on the upper surface of the substrate. The substrate, cover, connection electrode, and bonding pad are joined with a conductive member.
    • 半导体器件具有简化的结构,其包括其中用于安装半导体元件的部件与包括信号输入/输出单元的部件分离的封装结构。 麦克风封装配置有盖和基板。 麦克风芯片和电路元件被粘附并固定到形成在盖中的凹部的顶表面。 在凹部的外侧的盖的下表面上设置有多个接合焊盘。 接合线连接到电路元件和接合焊盘。 基板包括用作信号输入/输出单元的信号输入/输出端子,并且与信号输入/输出端子导通的连接电极被布置成面对衬底的上表面上的焊盘。 基板,盖,连接电极和接合焊盘与导电部件接合。