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11. 发明授权

US07012439B2 Multiple directional scans of test structures on semiconductor integrated circuits 有权
标题翻译：半导体集成电路测试结构的多方向扫描
公开(公告)号：US07012439B2
公开(公告)日：2006-03-14
申请号：US11058943
申请日：2005-02-15
申请人： Gustavo A. Pinto , Brian C. Leslie , David L. Adler , Akella V. S. Satya , Robert Thomas Long , David J. Walker
发明人： Gustavo A. Pinto , Brian C. Leslie , David L. Adler , Akella V. S. Satya , Robert Thomas Long , David J. Walker
IPC分类号： G01R31/304
CPC分类号： H01L22/34 , G01N21/66 , G01N21/956 , G01N23/04 , G01R31/2884 , G01R31/307 , H01J2237/2817 , Y10S977/849
摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.
摘要翻译：公开了一种检查样品的方法。用至少一个粒子束沿第一方向扫描样品。用至少一个粒子束在第二个方向上扫描样品。第二方向与第一方向成一个角度。作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。在具体实施例中，样本包括其上具有多个测试元件的测试结构。测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。

12. 发明授权

US5869833A Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments 失效
标题翻译：扫描电子显微镜和关键尺寸测量仪器的电子束剂量控制
公开(公告)号：US5869833A
公开(公告)日：1999-02-09
申请号：US784749
申请日：1997-01-16
申请人： Neil Richardson , Farid Askary , Stefano E. Concina , Kevin M. Monahan , David L. Adler
发明人： Neil Richardson , Farid Askary , Stefano E. Concina , Kevin M. Monahan , David L. Adler
IPC分类号： H01J37/20 , H01J37/147 , H01J37/28 , H01J37/00
CPC分类号： H01J37/28 , H01J2237/004 , H01J2237/2817
摘要： A system and method for controlling electron exposure on image specimens by adjusting a raster scan area in-between scan frame cycles. A small, zoomed-in, scan area and the surrounding area are flooded with positive charge for a number of frame cycles between scan frames to reduce the voltage differential between the scan area and surrounding area, thereby reducing the positive charge buildup which tends to obscure small features in scanned images. The peak current into a pixel element on the specimen is reduced by scanning the beam with a line period that is very short compared to regular video. Frames of image data may further be acquired non-sequentially, in arbitrarily programmable patterns. Alternatively, an inert gas can be injected into the scanning electron microscope at the point where the electron beam impinges the specimen to neutralize a charge build-up on the specimen by the ionization of the inert gas by the electron beam.
摘要翻译：通过调整扫描帧周期之间的光栅扫描区域来控制图像样本上的电子曝光的系统和方法。一个小的，放大的扫描区域和周围区域在扫描帧之间的多个帧周期中充满正电荷，以减少扫描区域和周围区域之间的电压差，从而减少倾向于模糊的正电荷积聚扫描图像中的小功能。通过以与常规视频相比非常短的线周期扫描光束来减小进入样品中的像素元件的峰值电流。图像数据的帧可以以任意可编程的模式进一步非依次获取。或者，可以在电子束照射样品的点处将惰性气体注入到扫描电子显微镜中，以通过电子束电离惰性气体来中和样品上的电荷积累。

13. 发明授权

US06211518B1 Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments 有权
标题翻译：扫描电子显微镜和关键尺寸测量仪器的电子束剂量控制
公开(公告)号：US06211518B1
公开(公告)日：2001-04-03
申请号：US09195097
申请日：1998-11-18
申请人： Neil Richardson , Farid Askary , Stefano E. Concina , Kevin M. Monahan , David L. Adler
发明人： Neil Richardson , Farid Askary , Stefano E. Concina , Kevin M. Monahan , David L. Adler
IPC分类号： H01J3700
CPC分类号： H01J37/28 , H01J2237/004 , H01J2237/2817
摘要： A system and method for controlling electron exposure on image specimens by adjusting a raster scan area in-between scan frame cycles. A small, zoomed-in, scan area and the surrounding area are flooded with positive charge for a number of frame cycles between scan frames to reduce the voltage differential between the scan area and surrounding area, thereby reducing the positive charge buildup which tends to obscure small features in scanned images. The peak current into a pixel element on the specimen is reduced by scanning the beam with a line period that is very short compared to regular video. Frames of image data may further be acquired non-sequentially, in arbitrarily programmable patterns. Alternatively, an inert gas can be injected into the scanning electron microscope at the point where the electron beam impinges the specimen to neutralize a charge build-up on the specimen by the ionization of the inert gas by the electron beam.
摘要翻译：通过调整扫描帧周期之间的光栅扫描区域来控制图像样本上的电子曝光的系统和方法。一个小的，放大的扫描区域和周围区域在扫描帧之间的多个帧周期中充满正电荷，以减少扫描区域和周围区域之间的电压差，从而减少倾向于模糊的正电荷积聚扫描图像中的小功能。通过以与常规视频相比非常短的线周期扫描光束来减小进入样品中的像素元件的峰值电流。图像数据的帧可以以任意可编程的模式进一步非依次获取。或者，可以在电子束照射样品的点处将惰性气体注入到扫描电子显微镜中，以通过电子束电离惰性气体来中和样品上的电荷积累。

14. 发明授权

US5973323A Apparatus and method for secondary electron emission microscope 失效
标题翻译：二次电子发射显微镜的装置和方法
公开(公告)号：US5973323A
公开(公告)日：1999-10-26
申请号：US964544
申请日：1997-11-05
申请人： David L. Adler , David J. Walker , Fred Babian , Travis Wolfe
发明人： David L. Adler , David J. Walker , Fred Babian , Travis Wolfe
IPC分类号： G01N23/225 , G01Q30/02 , H01J37/244 , H01J37/28 , H01J37/285 , H01L21/66 , H01J37/26
CPC分类号： H01J37/285
摘要： An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM.
摘要翻译：提出了一种使用电子束检查样品表面，特别是但不限于半导体器件的装置和方法。该技术被称为二次电子发射显微镜（SEEM），并且具有优于扫描电子显微镜（SEM）和低能量电子显微镜（LEEM）技术的显着优点。特别地，SEEM技术利用具有适于平行多像素成像的光束宽度的相对高能量的一次电子束。电子能量接近电荷稳定条件以实现比先前可用SEM更快的成像，并且电荷中性在LEEM中不能实现。

15. 发明授权

US06713759B2 Apparatus and method for secondary electron emission microscope 失效
标题翻译：二次电子发射显微镜的装置和方法
公开(公告)号：US06713759B2
公开(公告)日：2004-03-30
申请号：US10033452
申请日：2001-11-02
申请人： David L. Adler , David J. Walker , Fred Babian , Travis Wolfe
发明人： David L. Adler , David J. Walker , Fred Babian , Travis Wolfe
IPC分类号： H01J37244
CPC分类号： H01J37/285
摘要： An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM. The emitted electrons may be detected using a time delay integration detector.
摘要翻译：提出了一种使用电子束检查样品表面，特别是但不限于半导体器件的装置和方法。该技术被称为二次电子发射显微镜（SEEM），并且具有优于扫描电子显微镜（SEM）和低能量电子显微镜（LEEM）技术的显着优点。特别地，SEEM技术利用具有适于平行多像素成像的光束宽度的相对高能量的一次电子束。电子能量接近电荷稳定条件以实现比先前可用SEM更快的成像，并且电荷中性在LEEM中不能实现。可以使用时间延迟积分检测器来检测发射的电子。

16. 发明申请

US20080237487A1 MULTIPLE DIRECTIONAL SCANS OF TEST STRUCTURES ON SEMICONDUCTOR INTEGRATED CIRCUITS 有权
标题翻译：半导体集成电路测试结构的多个方向扫描
公开(公告)号：US20080237487A1
公开(公告)日：2008-10-02
申请号：US11675013
申请日：2007-02-14
申请人： Gustavo A. Pinto , Brian C. Leslie , David L. Adler , Akella V.S. Satya , Robert Thomas Long , David J. Walker , Padma A. Satya
发明人： Gustavo A. Pinto , Brian C. Leslie , David L. Adler , Akella V.S. Satya , Robert Thomas Long , David J. Walker , Padma A. Satya
IPC分类号： G21G5/00
CPC分类号： H01L23/5226 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.
摘要翻译：公开了一种检查样品的方法。用至少一个粒子束沿第一方向扫描样品。用至少一个粒子束在第二个方向上扫描样品。第二方向与第一方向成一个角度。作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。在具体实施例中，样本包括其上具有多个测试元件的测试结构。测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。

17. 发明授权

US06984822B2 Apparatus and method for secondary electron emission microscope 有权
公开(公告)号：US06984822B2
公开(公告)日：2006-01-10
申请号：US10406339
申请日：2003-04-02
申请人： David L. Adler , David J. Walker , Fred Babian , Travis Wolfe
发明人： David L. Adler , David J. Walker , Fred Babian , Travis Wolfe
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/285
摘要： An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM. The emitted electrons may be detected using a time delay integration detector.

18. 发明授权

US06087659A Apparatus and method for secondary electron emission microscope 有权
公开(公告)号：US06087659A
公开(公告)日：2000-07-11
申请号：US354948
申请日：1999-07-16
申请人： David L. Adler , David J. Walker , Fred Babian , Travis Wolfe
发明人： David L. Adler , David J. Walker , Fred Babian , Travis Wolfe
IPC分类号： G01N23/225 , G01Q30/02 , H01J37/244 , H01J37/28 , H01J37/285 , H01L21/66
CPC分类号： H01J37/285
摘要： An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM. The emitted electrons may be detected using a time delay integration detector.

19. 发明申请

US20200090826A1 X-RAY PHOTOEMISSION APPARATUS FOR INSPECTION OF INTEGRATED DEVICES 审中-公开
公开(公告)号：US20200090826A1
公开(公告)日：2020-03-19
申请号：US16690103
申请日：2019-11-20
申请人： David L. Adler
发明人： David L. Adler
IPC分类号： G21K1/00 , G01N23/04 , H01L23/498 , H01L27/02 , H01J1/78
摘要： An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. For some embodiments of the invention, the photoemissive structure is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In some embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.

20. 发明授权

US06897444B1 Multi-pixel electron emission die-to-die inspection 有权
标题翻译：多像素电子发射模 - 模检查
公开(公告)号：US06897444B1
公开(公告)日：2005-05-24
申请号：US10702271
申请日：2003-11-06
申请人： David L. Adler
发明人： David L. Adler
IPC分类号： G01N23/225 , G01Q30/02 , G01Q30/04 , H01J37/26 , H01J37/29 , H01J37/153
CPC分类号： H01J37/26 , G01N23/225 , H01J37/29 , H01J2237/24592 , H01J2237/2538 , H01J2237/2817
摘要： One embodiment disclosed is a method of detecting defects in objects. A selected surface area of an object is inspected with a multi-pixel electron microscope, and first set of data is generated having signal values representing image content of each pixel thereof. Further selected surface area of the object is inspected with said multi-pixel electron microscope, and second set of data is generated having signal values representing image content of each pixel thereof. Corresponding portions of first and second sets of data are stored in memory. Misalignment between stored portions of the first and second sets of data is detected with resolution of a fraction of a pixel, and the stored portions of first and second sets of data are aligned using subpixel interpolation to correct the detected misalignment therebetween. Finally, corresponding subportions of the aligned portions of first and second sets of data are compared to detect differences therebetween.
摘要翻译：公开的一个实施例是检测物体中的缺陷的方法。用多像素电子显微镜检查物体的选择的表面积，并且生成具有表示其每个像素的图像内容的信号值的第一组数据。用所述多像素电子显微镜检查物体的另外选择的表面积，并且生成具有表示其每个像素的图像内容的信号值的第二组数据。第一和第二组数据的相应部分被存储在存储器中。以分辨率为单位的像素的分辨率来检测第一和第二组数据的存储部分之间的对准，并且使用子像素插值来对齐第一组数据和第二组数据的存储部分，以校正其间检测到的不对准。最后，比较第一和第二组数据的对准部分的相应子部分，以检测它们之间的差异。

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