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11. 发明专利

JP2004158847A Apparatus and method for forming pattern on thin substrate 审中-公开
标题翻译：用于形成薄基板上的图案的装置和方法
公开(公告)号：JP2004158847A
公开(公告)日：2004-06-03
申请号：JP2003357217
申请日：2003-10-17
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： YAMAGUCHI HIROTAKA , TANIGUCHI YUKIO , TSUJIKAWA SUSUMU
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To securely form an exposed pattern without gradation on the processing region of a substrate (a substrate surface, namely the exposed surface of a processing object) in application such as an exposure apparatus, a processing apparatus, a method of exposure, a method of manufacturing thin-film transistors, and a method of manufacturing a display device.
SOLUTION: The substrate processing apparatus to be provided includes a holding table 1 for holding the substrate, an undulation or a thickness-unevenness detecting device 2, and a control unit 3 for operating the undulation or the thickness-unevenness detecting device, wherein the holding table 1 is locally deformed based on the detected undulation or the thickness unevenness of the substrate to deform the substrate in the range of the field to be processed. As a consequence the gradation of the image formed on the substrate is prevented.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了在曝光装置，处理装置，处理装置等的应用中，在基板的处理区域（基板表面，即处理对象的露出面）上可靠地形成无灰度的曝光图案曝光方法，薄膜晶体管的制造方法以及显示装置的制造方法。提供的基板处理装置包括用于保持基板的保持台1，起伏或厚度不均匀性检测装置2以及用于操作起伏或厚度不均匀检测装置的控制单元3，其中保持台1基于检测到的起伏或基板的厚度不均匀而局部变形，以使基板在待处理的范围内变形。因此，防止了形成在基板上的图像的灰度。版权所有（C）2004，JPO

12. 发明专利

JP2004101779A Crystallizing device and crystallizing method 有权
公开(公告)号：JP2004101779A
公开(公告)日：2004-04-02
申请号：JP2002262249
申请日：2002-09-09
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： TANIGUCHI YUKIO , MATSUMURA MASAKIYO , YAMAGUCHI HIROTAKA , NISHITANI MIKIHIKO , TSUJIKAWA SUSUMU , KIMURA YOSHINOBU , JUMONJI MASAYUKI
IPC分类号： B23K26/06 , B23K26/073 , G03F1/26 , G03F1/68 , G03F7/20 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , G03F1/08
CPC分类号： H01L29/78675 , B23K26/066 , B23K26/073 , B23K26/0734 , G02B5/02 , G02B5/3083 , G03F1/28 , G03F1/34 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L29/66757 , Y10T117/10
摘要： PROBLEM TO BE SOLVED: To provide a crystallizing device capable of controlling positions of crystal nuclei thereby approximately two-dimensionally controlling forming regions of crystals. SOLUTION: The crystallizing device is provided with an illumination system (2) for illuminating a phase shift mask (1) and forms a crystallized semiconductor film by irradiating a polycrystalline semiconductor film (3) or an amorphous semiconductor film (3) with light having a light intensity distribution of reverse peak patterns of the smallest light intensity regions corresponding to the phase shift sections of the phase shift mask. The phase shift mask has the first region and second region which are formed on both sides of an approximately straight boundary line and have a first phase difference and the microregions of prescribed shapes which are formed in at least the one region of the first region and the second region along the boundary line. A second phase difference is imparted between the first region formed with the microregions or the second region and the microregions. COPYRIGHT: (C)2004,JPO

13. 发明专利

JP2010141036A Phase shifter for crystallization equipment, crystallization equipment, and crystallization method 审中-公开
标题翻译：晶圆装置，结晶装置和结晶方法的相变装置
公开(公告)号：JP2010141036A
公开(公告)日：2010-06-24
申请号：JP2008314649
申请日：2008-12-10
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： ONO TAKASHI , TANIGUCHI YUKIO , ENDO NAOHIKO , AZUMA KAZUFUMI
IPC分类号： H01L21/268 , H01L21/20
摘要： PROBLEM TO BE SOLVED: To provide a phase shifter for crystallization equipment, crystallization equipment and a crystallization method having the high efficiency of alignment work for positioning the phase shifter in a 2-shot method, capable of improving the throughput of treatment, and in the treatment using the phase shifters having different materials and thicknesses, the size and shape of a positioning mark used in the later treatment are not changed.
SOLUTION: The phase shifter 5 for the crystallization equipment, for positioning each of optical members 51, 61 in accordance with specific optical characteristics thereof to standard positions, includes first alignment marks 8 disposed corresponding, in a one-to-one manner, to each of the optical members and second alignment marks 51x, 51y disposed in a holder 50A wherein the second alignment marks are transferred on the substrate to be treated by the irradiation of laser light so as to correspond, in a one-to-one manner, to the crystallization areas, and the transferred marks are used for positioning the substrate to be treated after crystallization, to the equipments for the next and thereafter treatment.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决问题的方案为了提供一种用于结晶设备的移相器，结晶设备和具有高对准作业的结晶方法，以便能够提高处理生产量的双相法，并且在使用具有不同材料和厚度的移相器的处理中，后续处理中使用的定位标记的尺寸和形状不改变。解决方案：用于结晶设备的移相器5用于根据其特定光学特性将每个光学部件51,61定位到标准位置，包括以一对一的方式设置的第一对准标记8 配置在保持器50A中的每个光学构件和第二对准标记51x，51y中，其中第二对准标记通过激光的照射被转印到待处理的基板上，以便对应于一对一方式，结晶区域，并且转印标记用于将待结晶的基板定位到下一个和之后处理的设备中。版权所有（C）2010，JPO＆INPIT

14. 发明专利

JP2008288608A Semiconductor crystallization apparatus 审中-公开
标题翻译：半导体结晶装置
公开(公告)号：JP2008288608A
公开(公告)日：2008-11-27
申请号：JP2008182519
申请日：2008-07-14
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： JUMONJI MASAYUKI , MATSUMURA MASAKIYO , KIMURA YOSHINOBU , NISHITANI MIKIHIKO , HIRAMATSU MASAHITO , TANIGUCHI YUKIO , NAKANO FUMIKI
IPC分类号： H01L21/268 , H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide crystallization with a desired crystal particle size on selected portions of a semiconductor layer.
SOLUTION: A laser crystallization apparatus has an attenuator which adjusts the power of a laser light from a light source, a phase shift mask which has a mask pattern where the phase of the laser light is alternately shifted and modulates the laser light having an inverse peak pattern distribution with the minimal light intensity at a phase shift portion, and an imaging optical system which irradiates a semiconductor layer on a substrate with the laser light with the inverse peak pattern distribution modulated through the phase shift mask. The laser crystallization apparatus positions crystal regions by moving the substrate in three dimensional directions by a moving stage, measures the light intensity and the inverse peak pattern distribution of the laser light on the substrate face through beam profile measuring means, and adjusts the attenuator so that the measurements agree with a target value set previously.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供在半导体层的选定部分上所需的晶粒尺寸的结晶。解决方案：激光结晶装置具有调节来自光源的激光的功率的衰减器，具有掩模图案的相移掩模，其中激光的相位交替移位，并且调制具有具有相移部分处的最小光强度的逆峰值图案分布，以及利用具有通过相移掩模调制的反峰值图案分布的激光照射衬底上的半导体层的成像光学系统。激光结晶装置通过移动台在三维方向上移动基板来定位晶体区域，通过光束轮廓测量装置测量基板面上的激光的光强度和反峰值图案分布，并调整衰减器，使得测量值与先前设定的目标值一致。版权所有（C）2009，JPO＆INPIT

15. 发明专利

JP2007281442A Apparatus and method for light irradiation and for crystallization, and semiconductor device 有权
标题翻译：用于光照射和结晶化的装置和方法以及半导体器件
公开(公告)号：JP2007281442A
公开(公告)日：2007-10-25
申请号：JP2007064254
申请日：2007-03-14
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： TANIGUCHI YUKIO
IPC分类号： H01L21/268 , H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a crystallization apparatus in which a desired light intensity distribution can be generated even when a coherence factor is set to a relatively large value, and thus a crystal grain of any desired shape can be generated. SOLUTION: The crystallization apparatus includes a light modulation device (1) for optically modulating an incident light; an illumination system (2) for illuminating the light modulation device; and an image forming optical system (3) which is disposed between the light modulation device and a plane to be illuminated, and forms a predetermined light intensity distribution on the plane to be illuminated. An exit pupil of the illumination system is set to a shape other than a circle such that a primary diffracted light from the light modulation device substantially does not pass through the opening of the pupil of the image forming optical system. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种其中即使当相干因子被设定为相对较大的值也可以产生所需的光强度分布的结晶装置，因此可以产生任何所需形状的晶粒。解决方案：结晶装置包括光调制入射光的光调制装置（1）照明系统（2），用于照亮所述光调制装置; 以及设置在所述光调制装置和被照射平面之间的成像光学系统（3），并且在所述被照射的平面上形成预定的光强度分布。照明系统的出射光瞳被设定为不是圆形的形状，使得来自光调制装置的主衍射光基本上不会通过图像形成光学系统的光瞳的开口。版权所有（C）2008，JPO＆INPIT

16. 发明专利

JP2006253660A Generation method and generation apparatus of light intensity distribution, and light modulation element unit 审中-公开
标题翻译：灯光强度分布的产生方法和发生装置以及光调制元件单元
公开(公告)号：JP2006253660A
公开(公告)日：2006-09-21
申请号：JP2006029082
申请日：2006-02-07
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： TANIGUCHI YUKIO , OGAWA HIROYUKI , JUMONJI MASAYUKI , AKITA NORITAKA , MATSUMURA MASAKIYO
IPC分类号： H01L21/268 , H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To quickly and correctly measure a light intensity distribution formed on a predetermined flat surface based on one-time optical irradiation and an evaluation of a physical change, without being substantially influenced by a moire phenomenon resulting from a relative position deviation of two light modulation elements. SOLUTION: There are provided a first light modulation element 11 for forming a primary light intensity distribution on a predetermined side 12, and a second light modulation element 1 for forming a secondary light intensity distribution on a predetermined side. The first light modulation element 11 and the second light modulation element 1 are arranged to be apart from each other by a predetermined distance, so that both a magnitude and a phase of a light distribution generated on a modulation side of the second light modulation element 1 by a light passing through the first light modulation element 11 may be substantially equalized within a modulation unit. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了快速且正确地测量基于一次光学照射而形成在预定平面上的光强度分布和物理变化的评估，而不受由相对性产生的莫尔条纹现象的显着影响两个光调制元件的位置偏差。解决方案：提供了用于在预定侧12上形成初级光强分布的第一光调制元件11和用于在预定侧形成二次光强度分布的第二光调制元件1。第一光调制元件11和第二调光元件1被布置成彼此分开预定距离，使得在第二光调制元件1的调制侧产生的配光的幅度和相位通过第一光调制元件11的光可以在调制单元内基本相等。版权所有（C）2006，JPO＆NCIPI

17. 发明专利

JP2006165176A Method and device for measuring light intensity distribution, method and device, for visualizing light intensity distribution, and crystallization apparatus and method 审中-公开
标题翻译：用于测量光强度分布的方法和装置，用于可见光强度分布的方法和装置，以及结晶装置和方法
公开(公告)号：JP2006165176A
公开(公告)日：2006-06-22
申请号：JP2004352877
申请日：2004-12-06
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： OGAWA HIROYUKI , AKITA NORITAKA , JUMONJI MASAYUKI , TANIGUCHI YUKIO , MATSUMURA MASAKIYO
IPC分类号： H01L21/268 , G01J1/00 , G01J1/02 , H01L21/20
摘要： PROBLEM TO BE SOLVED: To rapidly and correctly measure light intensity distribution formed on a given plane based on one-time evaluation of photoirradiation and property change. SOLUTION: A measurement method measures a first light intensity distribution that changes along a first direction on the image surface or the adjacent given surface of an image formation system (3) with an optical modulator (1). A visualization shifter (11) forms a second light intensity distribution that changes along a second direction that is orthogonal to the first direction on a give plane, and a composite light intensity distribution of the second light intensity distribution and the first light intensity distribution on a property changing member (12) that is set on a given plane and in which property changes depending on the intensity of incident light. In addition, the first light intensity distribution is measured based on two-dimensional information on the property change of the property changing member. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：基于光照射和性质变化的一次性评估，快速且正确地测量在给定平面上形成的光强度分布。解决方案：测量方法测量在具有光学调制器（1）的图像形成系统（3）的图像表面或相邻给定表面上沿第一方向变化的第一光强分布。可视化移动器（11）形成沿着与给定平面上的第一方向正交的第二方向变化的第二光强度分布，以及第二光强度分布和第一光强度分布的复合光强度分布属性改变构件（12），其设置在给定平面上，并且其特性根据入射光的强度而改变。另外，基于属性变更部件的特性变化的二维信息来测定第一光强分布。版权所有（C）2006，JPO＆NCIPI

18. 发明专利

JP2005214726A Light-intensity distribution detection method, light-intensity distribution detecting device, annealing device, and annealing method 有权
标题翻译：光强度分布检测方法，光强分布检测装置，退火装置和退火方法
公开(公告)号：JP2005214726A
公开(公告)日：2005-08-11
申请号：JP2004020104
申请日：2004-01-28
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： JUMONJI MASAYUKI , MATSUMURA MASAKIYO , KIMURA YOSHINOBU , HIRAMATSU MASAHITO , OGAWA HIROYUKI , TANIGUCHI YUKIO , AKITA NORITAKA
IPC分类号： G01J1/00 , G01J1/02 , G01J1/58 , H01L21/20 , H01L21/26 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To provide a light-intensity distribution detection method, a light-intensity distribution detecting device, an annealing device, and an annealing method capable of performing stable detection, without generating variations in measurement result, even when a material whose physical properties change is an object of study. SOLUTION: Light-intensity distribution of an invisible light is made to impinge on one surface of a wavelength conversion member 63 arranged at a position to which the light-intensity distribution is radiated, and the light-intensity distribution of the invisible light is converted into light-intensity distribution, whose center is a specific visible light wavelength. The light-intensity distribution, whose center is the specific visible light wavelength, is expanded optically, and imaged by an imaging means 69 from the other surface side of the wavelength conversion member. The imaged data are output to an analysis means as a light-intensity distribution waveform signal of visible light, comprising light-intensity information and two-dimensional positional information, and the light-intensity distribution of the invisible light is obtained, by analyzing the light-intensity distribution waveform signal of the visible light with the analysis means. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了提供能够进行稳定检测的光强度分布检测装置，退火装置和退火方法，而不产生测量结果的变化，即使当物理性质变化的物质是研究对象。解决方案：使不可见光的光强度分布撞击在布置在光强度分布被辐射的位置处的波长转换构件63的一个表面上，并且不可见光的光强度分布被转换为光强分布，其中心是特定的可见光波长。其中心是特定可见光波长的光强度分布被光学扩展，并由成像装置69从波长转换构件的另一表面侧成像。将成像数据输出到分析装置，作为包括光强度信息和二维位置信息的可见光的光强度分布波形信号，通过分析光线获得不可见光的光强度分布 - 具有分析手段的可见光强度分布波形信号。版权所有（C）2005，JPO＆NCIPI

19. 发明专利

JP2005114797A Exposure method and apparatus 审中-公开
标题翻译：曝光方法和装置
公开(公告)号：JP2005114797A
公开(公告)日：2005-04-28
申请号：JP2003345367
申请日：2003-10-03
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： YAMAGUCHI HIROTAKA , TANIGUCHI YUKIO , TSUJIKAWA SUSUMU
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an exposure apparatus and an exposure method by which even a surface having large roughness such as a glass substrate can be exposed with high resolution.
SOLUTION: An illumination optical system 2, a mask stage 3, a projection optical system 4 and a substrate stage 5 are successively disposed along the optical axis of a light source 1. The mask stage 3 and the substrate 5 hold a mask M and a glass substrate P, respectively. The light emitting from the light source 1 is shaped into an approximately rectangular form and irradiates the mask M. The pattern of the mask M imaged by the projection optical system 4 is transferred onto the glass substrate by relatively scanning the glass substrate P with a specified exposure region while the mask stage 3 and the substrate stage 5 are simultaneously moved. In this method, the exposure region is made variable according to the mask M and the exposure region of each pattern is controlled to the maximum depending on the depth of focus.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供即使具有较大粗糙度的表面（诸如玻璃基板）的曝光装置和曝光方法也能以高分辨率曝光。解决方案：照明光学系统2，掩模台3，投影光学系统4和基板台5沿着光源1的光轴依次设置。掩模台3和基板5保持掩模 M和玻璃基板P。从光源1发射的光被成形为大致矩形并照射掩模M.由投影光学系统4成像的掩模M的图案通过相对地扫描玻璃基板P而被转印到玻璃基板上曝光区域，同时掩模台3和基板台5同时移动。在该方法中，根据掩模M使曝光区域可变，并且根据焦深控制各图案的曝光区域最大。版权所有（C）2005，JPO＆NCIPI

20. 发明专利

JP2005093883A Method of crystallizing thin semiconductor film, crystallizer, phase shifter, tin film transistor, and display device 审中-公开
标题翻译：晶体半导体薄膜，晶体结晶器，相变薄膜，薄膜晶体管和显示器件的结晶方法
公开(公告)号：JP2005093883A
公开(公告)日：2005-04-07
申请号：JP2003327889
申请日：2003-09-19
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： KATO TOMOYA , KIMURA YOSHINOBU , HIRAMATSU MASAHITO , JUMONJI MASAYUKI , TANIGUCHI YUKIO , KETSUSAKO MITSUNORI , MATSUMURA MASAKIYO
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method of crystallizing a thin semiconductor film by which large crystal grains substantially containing no uncrystallized portion can be formed, and to provide a crystallizer, a phase shifter, a thin film transistor, and a display device. SOLUTION: During the course of crystallizing a non-single-crystal thin semiconductor film, the crystal growth of an annular interface, which is formed around the optical axis of energy light and has a prescribed diameter and on which the crystallization starting area of the non-single-crystal thin film exists, to the outside is started earlier than that to the inside. In addition, a molten state is maintained inside the annular interface in an initial stage of the crystal growth to the outside, and the crystal growth to the inside is started with a time lag behind the crystal growth to the outside. Through this course, crystal grains having fan-like shapes or polygonal shapes in a top view are obtained across inner and outer areas of the annular interface. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种结晶可以形成基本上不含未结晶部分的大晶粒的薄半导体膜的方法，并且提供结晶器，移相器，薄膜晶体管和显示器设备。解决方案：在结晶非单晶薄型半导体膜的过程中，环形界面的晶体生长形成在能量光的光轴周围并具有规定的直径，并且结晶起始区域存在非单晶薄膜，对外部的开始比内部更早。此外，在晶体生长到外部的初始阶段，在环状界面内部保持熔融状态，并且在向外部的晶体生长落后的时间段开始向内部的晶体生长。通过该过程，在环状界面的内部和外部区域获得顶视图中具有扇形或多边形形状的晶粒。版权所有（C）2005，JPO＆NCIPI

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