专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明公开

KR20180009384A 프로세스 챔버 내의 가스 제어 审中-公开
标题翻译：处理室内的气体控制
公开(公告)号：KR20180009384A
公开(公告)日：2018-01-26
申请号：KR20187001266
申请日：2016-06-01
申请人： APPLIED MATERIALS INC
发明人： LIANG QIWEI , NEMANI SRINIVAS D , YIEH ELLIE Y
IPC分类号： H01L21/02 , H01L21/205 , H01L21/60 , H01L21/683
CPC分类号： C23C16/4412 , C23C16/45563 , C23C16/45574
摘要： 측벽, 기판지지체, 및기판지지체위에배치된배기배출부를포함하는프로세스챔버가제공된다. 배기배출부와기판지지체사이에처리영역이형성되고, 배기배출부는처리영역에비해배기배출부에서낮은압력을생성하도록구성된배기디바이스에결합된다. 프로세스챔버는고리형영역의경계를정하는내측표면을갖는고리형상바디를포함하는가스링을더 포함한다. 가스링은제1 가스소스에결합되고처리영역에제1 가스를전달하도록구성된복수의제1 노즐을더 포함한다. 가스링은제2 가스소스에결합되고처리영역에제2 가스를전달하도록구성된복수의제2 노즐을더 포함한다.
摘要翻译：提供处理室，其包括侧壁，衬底支撑件和设置在衬底支撑件上的排气口。处理区域形成在排气出口和基板支撑件之间，并且排气出口连接到排气装置，该排气装置构造成在排气出口中产生比在处理区域中更低的压力。处理室还包括气环，该气环包括具有限定环形区域的内表面的环形主体。气环还包括多个第一喷嘴，所述多个第一喷嘴联接到第一气体源并且构造成将第一气体输送到处理区域。气环还包括多个第二喷嘴，所述多个第二喷嘴联接到第二气体源并且构造成将第二气体输送到处理区域。

12. 发明专利

JP2007305981A Integrated process modulation (ipm), novel solution for gapfill with hdp-cvd 有权
标题翻译：集成过程调制（IPM），用于HDP-CVD的GAPFILL的新颖解决方案
公开(公告)号：JP2007305981A
公开(公告)日：2007-11-22
申请号：JP2007108385
申请日：2007-04-17
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： NEMANI SRINIVAS D , LEE YOUNG S , YIEH ELLIE Y , WANG ANCHUAN , BLOKING JASON THOMAS , HAN LUNG-TIEN
IPC分类号： H01L21/76 , C23C16/44 , H01L21/3065 , H01L21/316
CPC分类号： H01L21/76224
摘要： PROBLEM TO BE SOLVED: To provide a process for depositing a silicon oxide film on a substrate disposed in a process chamber with a gapfill capability improved. SOLUTION: A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 10 11 ions/cm 3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber with reference to the flow rate of the silicon source to the process chamber is substantially in the range between 0.5 and 3.0. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种在设置在具有改进的间隙填充能力的处理室中的基板上沉积氧化硅膜的工艺。解决方案：包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。从处理气体形成离子密度为至少10×10 -6 / cm 3的离子体。氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。参考硅源到处理室的流速，卤素源到处理室的流速基本上在0.5和3.0之间。版权所有（C）2008，JPO＆INPIT

13. 发明专利

JP2009033178A Vacuum chucking heater of axisymmetrical and uniform thermal profile 有权
标题翻译：轴对称和均匀热轮廓的真空开关加热器
公开(公告)号：JP2009033178A
公开(公告)日：2009-02-12
申请号：JP2008196676
申请日：2008-07-30
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： LU SIQING , CHANDRASEKARAN BALAJI , GEE PAUL EDWARD , INGLE NITIN K , LUBOMIRSKY DMITRY , YUAN ZHENG , YIEH ELLIE Y
IPC分类号： H01L21/683 , C23C16/458 , H01L21/205
CPC分类号： C23C16/4586 , C23C16/4584 , Y10T279/11
摘要： PROBLEM TO BE SOLVED: To provide an improved vacuum chucking heater for processing substrates. SOLUTION: Provided is a vacuum chuck having an axisymmetrical and/or more uniform thermal profile. In some embodiments, a vacuum chuck includes a body having a support surface for supporting a substrate thereupon; a plurality of axisymmetrically arranged grooves formed in the support surface, at least some of the grooves intersecting; and a plurality of chucking holes formed through the body within non-intersecting portions of the grooves, wherein the chucking holes fluidic-couples the grooves to a vacuum source during operation. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供用于处理基板的改进的真空吸盘加热器。解决方案：提供具有轴对称和/或更均匀的热分布的真空卡盘。在一些实施例中，真空卡盘包括具有用于支撑基板的支撑表面的主体; 形成在支撑表面中的多个轴对称布置的槽，至少一些槽相交; 以及在所述槽的非交叉部分内穿过所述主体形成的多个夹紧孔，其中所述夹紧孔在操作期间将所述凹槽流体耦合到真空源。版权所有（C）2009，JPO＆INPIT

14. 发明专利

JP2013239752A Method and system for improving dielectric film quality for void-free gap fill 审中-公开
标题翻译：用于改善无电隙隙填充物的电介质膜质量的方法和系统
公开(公告)号：JP2013239752A
公开(公告)日：2013-11-28
申请号：JP2013176813
申请日：2013-08-28
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： MALLICK ABHIJIT BASU , MUNRO JEFFREY C , WANG LINLIN , NEMANI SRINIVAS D , ZHENG YI , TSENG YUAN , LUBOMIRSKY DIMITRY , YIEH ELLIE Y
IPC分类号： H01L21/316 , C23C16/42 , H01L21/26
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/24 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/76837
摘要： PROBLEM TO BE SOLVED: To provide a method of forming silicon oxide layers on a substrate which enables filling without generating voids and seams in a dielectric.SOLUTION: The method includes forming a first oxide layer overlying at least a portion of a substrate, the first oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first oxide layer to a plurality of silicon-containing species in order to form a plurality of amorphous silicon components partially mixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially mixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer, and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.
摘要翻译：要解决的问题：提供一种在基板上形成氧化硅层的方法，其能够填充而不会在电介质中产生空隙和接缝。方法：该方法包括形成覆盖至少一部分基板的第一氧化物层，第一包括残留水，羟基和碳类的氧化物层。该方法还包括将第一氧化物层暴露于多个含硅物质，以便形成与第一氧化硅层部分混合的多个非晶硅组分。另外，该方法包括在氧化环境中退火与多个非晶硅组分部分混合的第一氧化硅层，以在衬底上形成第二氧化硅层。至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。

15. 发明专利

DE112015003334T5 Additive Herstellung mittels Laser und Plasma 未知
公开(公告)号：DE112015003334T5
公开(公告)日：2017-03-30
申请号：DE112015003334
申请日：2015-07-16
申请人： APPLIED MATERIALS INC
发明人： YIEH ELLIE Y , RAMASWAMY KARTIK , KRISHNAN KASIRAMAN , SUN JENNIFER Y , BREZOCZKY THOMAS B , YAVELBERG SIMON , SRINIVASAN SWAMINATHAN , PATIBANDLA NAG B , NG HOU T , SUBRAMANI ANANTHA K , NEMANI SRINIVAS D , ROWLAND CHRISTOPHER A
IPC分类号： B29C67/00 , B33Y30/00 , B33Y50/02
摘要： Ein additives Herstellungssystem umfasst eine Platte, eine Abgabevorrichtung für Zuführmaterial, die konfiguriert ist, um ein Zuführmaterial über die Platte zu befördern, einen Laser, der konfiguriert ist, um einen Laserstrahl zu erzeugen, eine Steuereinrichtung, die konfiguriert ist, um den Laserstrahl an Stellen zu richten, die durch Daten spezifiziert sind, die in einem computerlesbaren Medium gespeichert sind, um das Zuführmaterial zu verschmelzen, und eine Plasmaquelle, die konfiguriert ist, Ionen zu erzeugen, die im Wesentlichen auf dieselbe Stelle der Platte gerichtet sind wie der Laserstrahl.

16. 发明专利

JP2009152551A Method and system for improving dielectric film quality for void free gap fill 审中-公开
标题翻译：用于改善无电隙隙填料的电介质膜质量的方法和系统
公开(公告)号：JP2009152551A
公开(公告)日：2009-07-09
申请号：JP2008271319
申请日：2008-10-21
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： MALLICK ABHIJIT BASU , MUNRO JEFFREY C , WANG LINLIN , NEMANI SRINIVAS D , ZHENG YI , YUAN ZHENG , LUBOMIRSKY DIMITRY , YIEH ELLIE Y
IPC分类号： H01L21/316 , H01L21/312 , H01L21/76
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/24 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/76837
摘要： PROBLEM TO BE SOLVED: To provide a method for forming, on a substrate, a silicon oxide layer to be filled without generating a void or a seam in a dielectric.
SOLUTION: The method includes a step of forming a first silicon oxide layer overlying at least a portion of the substrate, wherein the first silicon oxide layer includes residual water, hydroxyl groups, and carbon species. The method further includes a step of exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes a step of annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a part of amorphous silicon components is oxidized to form part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在基板上形成待填充的氧化硅层而不在电介质中产生空隙或接缝的方法。解决方案：该方法包括形成覆盖至少一部分衬底的第一氧化硅层的步骤，其中第一氧化硅层包括残留水，羟基和碳物质。该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分的步骤。此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层的步骤。至少一部分非晶硅组分被氧化以形成第二氧化硅层的一部分，并且基本上除去第二氧化硅层中未反应的残余羟基和碳物质。版权所有（C）2009，JPO＆INPIT

17. 发明专利

JP2008182199A Multi-step dep-etch-dep (deposition-etching-deposition) high-density plasma chemical vapor deposition process for filling dielectric gap 有权
标题翻译：多层DEP-ETCH-DEP（沉积蚀刻沉积）高密度等离子体化学气相沉积工艺，用于填充电介质
公开(公告)号：JP2008182199A
公开(公告)日：2008-08-07
申请号：JP2007317207
申请日：2007-12-07
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： HUA ZHONG QIANG , PURNAWAN RIONARD , BLOKING JASON THOMAS , WANG ANCHUAN , LEE YOUNG S , YIEH ELLIE Y
IPC分类号： H01L21/316 , H01L21/31
CPC分类号： C23C16/401 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31111 , H01L21/3145 , H01L21/31612
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a dielectric material in a substrate gap, using a high-density plasma.
SOLUTION: The method may include a step to deposit a first portion of the dielectric material into the gap by the high-density plasma. This deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that contains reactive species from a mixture, including NH
3 and NF
3 . The etchant forms a solid reaction product by the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap by the high-density plasma.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供使用高密度等离子体在基板间隙中形成电介质材料的方法。解决方案：该方法可以包括通过高密度等离子体将电介质材料的第一部分沉积到间隙中的步骤。该沉积可以形成至少部分地阻挡介电材料沉积到间隙中的突出结构。介电材料的第一部分暴露于包含来自混合物的反应物质的蚀刻剂，包括NH 3 SB 3和NF 3 SB 3。蚀刻剂通过突出结构形成固体反应产物，并且固体反应产物可以从基底上除去。电介质材料的最终部分可以通过高密度等离子体沉积在间隙中。版权所有（C）2008，JPO＆INPIT

18. 发明专利

JP2014053645A Vacuum chucking heater of axisymmetrical and uniform thermal profile 审中-公开
标题翻译：轴对称和均匀热轮廓的真空开关加热器
公开(公告)号：JP2014053645A
公开(公告)日：2014-03-20
申请号：JP2013259036
申请日：2013-12-16
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： LU SIQING , CHANDRASEKARAN BALAJI , GEE PAUL EDWARD , INGLE NITIN K , LUBOMIRSKY DMITRY , TSENG YUAN , YIEH ELLIE Y
IPC分类号： H01L21/683
CPC分类号： C23C16/4586 , C23C16/4584 , Y10T279/11
摘要： PROBLEM TO BE SOLVED: To provide an improved vacuum chucking heater for processing substrates.SOLUTION: Embodiments of a vacuum chuck having an axisymmetrical and/or more uniform thermal profile are provided herein. In some embodiments, a vacuum chuck includes: a body having a support surface for supporting a substrate thereupon; a plurality of axisymmetrically arranged grooves formed in the support surface, at least some of the axisymmetrical grooves intersecting; and a plurality of chucking holes formed through the body and within the axisymmetrical grooves, the chucking holes being for fluidly coupling the plurality of axisymmetrical grooves to a vacuum source during operation, where the chucking holes are disposed in non-intersecting portions of the plurality of axisymmetrical grooves. The chucking holes are symmetrically arranged about a central axis of the vacuum chuck.
摘要翻译：要解决的问题：提供一种改进的用于处理衬底的真空吸盘加热器。本文提供具有轴对称和/或更均匀的热分布的真空吸盘的实施例。在一些实施例中，真空吸盘包括：主体，其具有用于支撑其上的基板的支撑表面; 多个轴对称布置的槽，形成在所述支撑表面中，所述轴对称槽中的至少一些相交; 以及多个夹持孔，穿过本体并在轴对称槽内形成，夹持孔用于在操作期间将多个轴对称槽流体耦合到真空源，其中夹紧孔设置在多个轴对称槽。夹紧孔围绕真空吸盘的中心轴对称排列。

19. 发明专利

JP2014013905A Methods for forming silicon oxide layer over substrate 审中-公开
标题翻译：在基材上形成氧化硅层的方法
公开(公告)号：JP2014013905A
公开(公告)日：2014-01-23
申请号：JP2013160385
申请日：2013-08-01
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： SRINIVAS D NEMANI , MALIK ABHIIT BAS , YIEH ELLIE Y
IPC分类号： H01L21/316 , C23C16/42 , H01L21/31
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02274 , H01L21/02337 , H01L21/3122 , H01L21/31633
摘要： PROBLEM TO BE SOLVED: To provide new methods of depositing low-k carbon based films with reduced porosity, lower WERR values, and less cracking.SOLUTION: A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and NH3 plasma are reacted to form a silicon oxide layer. The first silicon-containing precursor includes at least one of Si-H bonds and Si-Si bonds. The second silicon-containing precursor includes at least one Si-N bond. The deposited silicon oxide layer is annealed.
摘要翻译：要解决的问题：提供沉积孔隙率低的低k碳膜，较低WERR值和较少裂纹的新方法。解决方案：在衬底上沉积氧化硅层的方法包括：向沉积室提供衬底。第一含硅前体，第二含硅前体和NH 3等离子体反应形成氧化硅层。第一含硅前体包括Si-H键和Si-Si键中的至少一种。第二含硅前体包括至少一个Si-N键。沉积的氧化硅层退火。

20. 发明专利

JP2013243375A Methods for forming silicon oxide layer over substrate 审中-公开
标题翻译：在基材上形成氧化硅层的方法
公开(公告)号：JP2013243375A
公开(公告)日：2013-12-05
申请号：JP2013138042
申请日：2013-07-01
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： SRINIVAS D NEMANI , MALIK ABHIIT BAS , YIEH ELLIE Y
IPC分类号： H01L21/316 , C23C16/42 , C23C16/50
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02274 , H01L21/02337 , H01L21/3122 , H01L21/31633
摘要： PROBLEM TO BE SOLVED: To provide a method of depositing low-k carbon based films with reduced porosity, lower wet etch rate ratios, and less cracking.SOLUTION: A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and NH3 plasma are reacted to form a silicon oxide layer. The first silicon-containing precursor includes at least one of a Si-H bond and a Si-Si bond. The second silicon-containing precursor includes at least one Si-N bond. The deposited silicon oxide layer is annealed.
摘要翻译：要解决的问题：提供一种沉积具有降低的孔隙率，较低的湿蚀刻速率比和较少的裂纹的低k碳基膜的方法。解决方案：在衬底上沉积氧化硅层的方法包括提供衬底至沉积室。第一含硅前体，第二含硅前体和NH 3等离子体反应形成氧化硅层。第一含硅前体包括Si-H键和Si-Si键中的至少一种。第二含硅前体包括至少一个Si-N键。沉积的氧化硅层退火。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式