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11. 发明授权

EP1737600B1 METHOD AND APPARATUS FOR TRANSFERRING CONDUCTIVE PIECES DURING SEMICONDUCTOR DEVICE FABRICATION 有权
标题翻译：用于转移官员的方法和设备份额的半导体元件的制造
公开(公告)号：EP1737600B1
公开(公告)日：2008-08-27
申请号：EP05732259.6
申请日：2005-03-31
申请人： APPLIED MATERIALS, INC.
发明人： RICE, Michael, R. , BJORKMAN, Claes, H. , ZHAO, Jun , COLLINS, Kenneth, S. , MIU, Thomas
IPC分类号： B23K3/06 , H01L21/60 , H05K3/34 , H01L21/48 , H01L21/00
CPC分类号： H05K3/3478 , H01L21/4853 , H01L21/67144 , H01L21/6835 , H01L23/544 , H01L24/11 , H01L24/742 , H01L2224/05573 , H01L2224/11003 , H01L2224/11334 , H01L2224/13099 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01051 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/1461 , H01L2924/19041 , H01L2924/30105 , H05K2201/10212 , H05K2203/0338 , H05K2203/041 , H01L2924/00 , H01L2224/05599
摘要： In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided.

12. 发明公开

EP1737600A1 METHODS AND APPARATUS FOR TRANSFERRING CONDUCTIVE PIECES DURING SEMICONDUCTOR DEVICE FABRICATION 有权
标题翻译：用于转移官员的方法和设备份额的半导体元件的制造
公开(公告)号：EP1737600A1
公开(公告)日：2007-01-03
申请号：EP05732259.6
申请日：2005-03-31
申请人： APPLIED MATERIALS, INC.
发明人： RICE, Michael, R. , BJORKMAN, Claes, H. , ZHAO, Jun , COLLINS, Kenneth, S. , MIU, Thomas
IPC分类号： B23K3/06 , H01L21/60 , H05K3/34 , H01L21/48 , H01L21/00
CPC分类号： H05K3/3478 , H01L21/4853 , H01L21/67144 , H01L21/6835 , H01L23/544 , H01L24/11 , H01L24/742 , H01L2224/05573 , H01L2224/11003 , H01L2224/11334 , H01L2224/13099 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01051 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/1461 , H01L2924/19041 , H01L2924/30105 , H05K2201/10212 , H05K2203/0338 , H05K2203/041 , H01L2924/00 , H01L2224/05599
摘要： In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided.

13. 发明公开

EP1307896A2 EXTERNALLY EXCITED TORROIDAL PLASMA SOURCE 审中-公开
标题翻译： OUTSIDE建议的TORROIDFÖRMIGE等离子体源
公开(公告)号：EP1307896A2
公开(公告)日：2003-05-07
申请号：EP01964028.3
申请日：2001-08-13
申请人： Applied Materials, Inc.
发明人： HANAWA, Hiroji , YE, Yan , COLLINS, Kenneth, S. , RAMASWAMY, Kartik , NGUYEN, Andrew , TANAKA, Tsutomu
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally opposite sides of the workpiece support. At least one hollow conduit is connected to the first and second openings. A closed torroidal path is provided through the conduit and extending between the first and second openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal path. A coil antenna is coupled to an RF power source and inductively coupled to the interior of the hollow conduit and capable of maintaining a plasma in the torroidal path.

14. 发明申请

WO2010056338A3 PROTECTIVE COATINGS RESISTANT TO REACTIVE PLASMA PROCESSING 审中-公开
公开(公告)号：WO2010056338A3
公开(公告)日：2010-05-20
申请号：PCT/US2009/006096
申请日：2009-11-12
申请人： APPLIED MATERIALS, INC.
发明人： SUN, Jennifer, Y. , DUAN, Ren-Guan , COLLINS, Kenneth, S.
IPC分类号： C04B41/85 , C04B41/87 , C04B41/45
摘要： Embodiments of the invention relate to compositions of metal oxyfluoride- comprising glazes or metal fluoride-comprising glazes, glass ceramics, and combinations thereof which are useful as plasma- resistant solid substrates or plasma resistant protective coatings over other substrates. Also described are methods of fabricating various structures which incorporate such compositions, including solid substrates and coatings over the surface of a substrate which has a melting point which is higher than about 1600 0C, such as aluminum oxide, aluminum nitride, quartz, silicon carbide, silicon nitride.

15. 发明申请

WO2009064371A1 PLASMA IMMERSION ION IMPLANTATION REACTOR WITH EXTENDED CATHODE PROCESS RING 审中-公开
标题翻译：具有扩展阴极过程环的等离子体浸入式离子注入反应器
公开(公告)号：WO2009064371A1
公开(公告)日：2009-05-22
申请号：PCT/US2008/012594
申请日：2008-11-06
申请人： APPLIED MATERIALS, INC.
发明人： PORSHNEV, Peter, I , FOAD, Majeed, A. , RAMASWAMY, Karitk , GALLO, Biagio , HANAWA, Hiroji , NGUYEN, Andrew , COLLINS, Kenneth, S. , AL-BAYATI, Amir
IPC分类号： C23F1/00
CPC分类号： H01J37/32642 , H01J37/32412
摘要： The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.
摘要翻译：本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

16. 发明申请

WO2006124968A2 A PROCESS FOR LOW TEMPERATURE PLASMA DEPOSITION OF AN OPTICAL ABSORPTION LAYER AND HIGH SPEED OPTICAL ANNEALING 审中-公开
标题翻译：光吸收层的低温等离子体沉积和高速光学退火的工艺
公开(公告)号：WO2006124968A2
公开(公告)日：2006-11-23
申请号：PCT/US2006/019030
申请日：2006-05-16
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , HANAWA, Hiroji , GALLO, Biagio , COLLINS, Kenneth, S. , MA, Kai , PARIHAR, Vijay , JENNINGS, Dean , MAYUR, Abhilash , AL-BAYATI, Amir , NGUYEN, Andrew
IPC分类号： H05H1/24
CPC分类号： H05H1/46
摘要： A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.
摘要翻译：一种处理工件的方法包括将光吸收材料前体气体引入到包含工件的室中，在折入路径中产生RF振荡环形等离子体电流，其包括通过施加RF源功率覆盖工件的工艺区域，以便沉积在工件上的光吸收材料层，以及将工件暴露于至少部分地吸收在光吸收层中的光辐射。

17. 发明申请

WO2005097390A1 METHODS AND APPARATUS FOR TRANSFERRING CONDUCTIVE PIECES DURING SEMICONDUCTOR DEVICE FABRICATION 审中-公开
标题翻译：用于在半导体器件制造期间传导导电片的方法和装置
公开(公告)号：WO2005097390A1
公开(公告)日：2005-10-20
申请号：PCT/US2005/010623
申请日：2005-03-31
申请人： APPLIED MATERIALS, INC.
发明人： RICE, Michael, R. , BJORKMAN, Claes, H. , ZHAO, Jun , COLLINS, Kenneth, S. , MIU, Thomas
IPC分类号： B23K3/06
CPC分类号： H05K3/3478 , H01L21/4853 , H01L21/67144 , H01L21/6835 , H01L23/544 , H01L24/11 , H01L24/742 , H01L2224/05573 , H01L2224/11003 , H01L2224/11334 , H01L2224/13099 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01051 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/1461 , H01L2924/19041 , H01L2924/30105 , H05K2201/10212 , H05K2203/0338 , H05K2203/041 , H01L2924/00 , H01L2224/05599
摘要： In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided.
摘要翻译：在第一方面，提供了一种用于将导电片传送到目标衬底的电极焊盘的可编程传送装置。可编程转移装置包括（1）转移基板; 和（2）形成在转印基板上的多个可单独寻址的电极。每个电极适于在将导电片传送到目标衬底的电极焊盘的过程中选择性地吸引和保持导电片。提供了许多其他方面。

18. 发明申请

WO2004042773A2 METHOD TO DRIVE SPATIALLY SEPARATE RESONANT STRUCTURE WITH SPATIALLY DISTINCT PLASMA SECONDARIES USING A SINGLE GENERATOR AND SWITCHING ELEMENTS 审中-公开
标题翻译：使用单发电机和开关元件驱动空间分离谐振结构与空间等离子体二次的方法
公开(公告)号：WO2004042773A2
公开(公告)日：2004-05-21
申请号：PCT/US2003/032384
申请日：2003-10-10
申请人： APPLIED MATERIALS INC.
发明人： HANAWA, Hiroji , RAMASWAMY, Kartik , COLLINS, Kenneth, S. , NGUYEN, Andrew , MONROY, Gonzalo, Antonio
IPC分类号： H01J37/32
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32174
摘要： A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region therebetween extending generally across the diameter of said wafer support, the enclosure having a first and second pairs of openings therethrough, the two openings of each of the first and second pairs being near generally opposite sides of said workpiece support, a first hollow conduit outside of the process region and connected to the first pair of openings, providing a first torroidal path extending through the conduit and across the process region, a second hollow conduit outside of the process region and connected to the second pair of openings, providing a second torroidal path extending through the conduit and across the process region, first and second plasma source power applicators inductively coupled to the interiors of the first and second hollow conduits, respectively, each of the first and second plasma source power applicators being capable of maintaining a plasma in a respective one of the first and second torroidal paths, an RF power generator providing an RF output current, a current switching network connected between the RF power generator and the first and second plasma source power applicators for applying respective periodic time segments of RF output current to respective ones of said first and second plasma source power applicators.
摘要翻译：一种用于处理工件的等离子体反应器，所述等离子体反应器包括外壳，所述外壳内的工件支撑件面向所述外壳的上部，所述工件支撑件和所述外壳的上部部分限定了其间的工艺区域，所述晶片支撑件，所述外壳具有穿过其中的第一和第二对开口，所述第一和第二对中的每一个的两个开口靠近所述工件支撑件的大致相对的两侧，在所述工艺区域外部并连接到所述工件区域的第一中空导管第一对开口，提供延伸穿过导管并跨过处理区域的第一环形路径，在处理区域外部的第二中空导管，并连接到第二对开口，提供延伸穿过导管并跨过管道的第二环形路径工艺区域，第一和第二等离子体源功率施加器电感耦合到第一和第二空心管道的裂口分别地，第一和第二等离子体源功率施加器中的每一个能够维持第一和第二环形路径中的相应一个中的等离子体，提供RF输出电流的RF发电机，连接在RF功率发生器和第一和第二等离子体源功率施加器之间的电流开关网络，用于将RF输出电流的相应的周期性时间段施加到所述第一和第二等离子体源功率施加器中的相应的等离子体源功率施加器。

19. 发明申请

WO2022060509A1 PLASMA CHAMBER WITH A MULTIPHASE ROTATING MODULATED CROSS-FLOW 审中-公开
公开(公告)号：WO2022060509A1
公开(公告)日：2022-03-24
申请号：PCT/US2021/046262
申请日：2021-08-17
申请人： APPLIED MATERIALS, INC.
发明人： COLLINS, Kenneth, S. , RICE, Michael, R. , CARDUCCI, James, D. , RAMASWAMY, Kartik , BALAKRISHNA, Ajit , RAUF, Shahid , KENNEY, Jason
IPC分类号： H01J37/32
摘要： Embodiments disclosed herein include a plasma treatment chamber, comprising one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow.

20. 发明申请

WO2014014568A1 SYMMETRICAL INDUCTIVELY COUPLED PLASMA SOURCE WITH COAXIAL RF FEED AND COAXIAL SHIELDING 审中-公开
标题翻译：具有同轴射频馈线和同轴屏蔽的对称电感耦合等离子体源
公开(公告)号：WO2014014568A1
公开(公告)日：2014-01-23
申请号：PCT/US2013/044225
申请日：2013-06-05
申请人： APPLIED MATERIALS, INC.
发明人： KENNEY, Jason, A. , CARDUCCI, James, D, , COLLINS, Kenneth, S. , FOVELL, Richard , RAMASWAMY, Kartik , RAUF, Shahid
IPC分类号： H05H1/46 , H01L21/205 , C23C16/50
CPC分类号： C23C16/5096 , H01J37/3211 , H01J37/32651 , H05H1/46 , H05H2001/4667
摘要： A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and symmetrical RF shielding around the symmetric RF feeds.
摘要翻译：等离子体反应器具有架空多线圈感应等离子体源，对称RF馈电和围绕对称RF馈送的对称RF屏蔽。

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