专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20120187515A1 LIGHT SENSOR HAVING TRANSPARENT SUBSTRATE WITH LENS FORMED THEREIN 有权
标题翻译：具有透镜形成透明基板的光传感器
公开(公告)号：US20120187515A1
公开(公告)日：2012-07-26
申请号：US13337879
申请日：2011-12-27
申请人： Nicole D. Kerness , Arkadii V. Samoilov , Zhihai Wang , Joy T. Jones
发明人： Nicole D. Kerness , Arkadii V. Samoilov , Zhihai Wang , Joy T. Jones
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14621 , H01L27/14618 , H01L27/14625 , H01L27/14636 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L31/02165 , H01L31/02327 , H01L31/18 , H01L2224/13
摘要： Light sensor devices are described that have a glass substrate, which includes a lens to focus light over a wide variety of angles, bonded to the light sensor device. In one or more implementations, the light sensor devices include a substrate having a photodetector formed therein. The photodetector is capable of detecting light and providing a signal in response thereto. The sensors also include one or more color filters disposed over the photodetector. The color filters are configured to pass light in a limited spectrum of wavelengths to the photodetector. A glass substrate is disposed over the substrate and includes a lens that is configured to collimate light incident on the lens and to pass the collimated light to the color filter.
摘要翻译：描述了具有玻璃基板的光传感器装置，该玻璃基板包括用于将光聚焦在各种各样的角度上的结合到光传感器装置上的透镜。在一个或多个实施方案中，光传感器装置包括其中形成有光电检测器的基板。光电检测器能够检测光并响应于此提供信号。传感器还包括设置在光电检测器上方的一个或多个滤色器。滤色器被配置为将光在有限的波长范围内传递到光电检测器。玻璃基板设置在基板上方，并且包括被配置为准直入射在透镜上的光并将准直光通过到滤色器的透镜。

12. 发明申请

US20120187513A1 LIGHT SENSOR HAVING IR CUT AND COLOR PASS INTERFERENCE FILTER INTEGRATED ON-CHIP 有权
标题翻译：具有红外线切割和彩色通道干涉滤光片的光传感器集成片上
公开(公告)号：US20120187513A1
公开(公告)日：2012-07-26
申请号：US13187729
申请日：2011-07-21
申请人： Prashanth Holenarsipur , Zhihai Wang , Nicole Dorene Kerness
发明人： Prashanth Holenarsipur , Zhihai Wang , Nicole Dorene Kerness
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14645
摘要： A light sensor is described that includes an IR cut interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are formed in the substrate proximate to the surface of the substrate. An IR cut interference filter is disposed over the photodetectors. The IR cut interference filter is configured to filter infrared light from light received by the light sensor to at least substantially block infrared light from reaching the photodetectors. At least one color interference filter is disposed proximate to the IR cut interference filter. The color interference filter is configured to filter visible light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to at least one of the photo detectors.
摘要翻译：描述了一种光传感器，其包括IR切割干涉滤光器和集成在片上的至少一个颜色干涉滤光器。光传感器包括包括衬底的半导体器件（例如，裸片）。光电检测器形成在靠近衬底表面的衬底中。红外截止干涉滤光片设置在光电探测器上。 IR切割干涉滤光器被配置为过滤由光传感器接收的光的红外光，以至少基本上阻挡红外光到达光电检测器。至少一个颜色干涉滤光器设置在靠近IR切割干涉滤光器处。颜色干涉滤光器被配置为对由光传感器接收的可见光进行滤光，以将有限的波长范围（例如，具有第一波长和第二波长之间的波长的光）照射到至少一个光检测器。

13. 发明申请

US20120187512A1 LIGHT SENSOR HAVING IR CUT INTERFERENCE FILTER WITH COLOR FILTER INTEGRATED ON-CHIP 有权
标题翻译：具有彩色滤光片集成片上红外线切割干涉滤光片的光传感器
公开(公告)号：US20120187512A1
公开(公告)日：2012-07-26
申请号：US13014549
申请日：2011-01-26
申请人： Zhihai Wang , Nicole Dorene Kerness , Stanley Barnett
发明人： Zhihai Wang , Nicole Dorene Kerness , Stanley Barnett
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14621 , G02B5/285 , H01L27/14618 , H01L27/14645 , H01L27/14685 , H01L31/02162 , H01L31/02325 , H01L2924/0002 , H01L2924/00
摘要： Techniques are described to furnish a light sensor that includes a patterned IR cut interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR cut interference filter configured to block infrared light is formed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR cut interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. In an implementation, a buffer layer is formed over the surface and configured to encapsulate the plurality of color pass filters to facilitate formation of the IR cut interference filter. In another implementation, the buffer layer is formed over the IR cut interference filter to function as a quasi-sacrificial buffer layer to facilitate formation of the color pass filters.
摘要翻译：描述了技术来提供光传感器，其包括与图案化彩色滤光片集成的图案化的IR切割干涉滤光片。在一个或多个实施方案中，光传感器包括具有表面的基板。在衬底的表面上形成被配置为阻挡红外光的IR切割干涉滤光器。光传感器还包括放置在IR切割干涉滤光片上方或下方的一个或多个彩色滤光片。彩色通过滤光器被配置为过滤可见光以将有限的波长光中的光传递到一个或多个光电检测器。在一个实现中，在表面上形成缓冲层，并且被配置为封装多个彩色滤光片以便于IR切割干涉滤光器的形成。在另一个实施方案中，缓冲层形成在IR切割干涉滤光片上，用作准牺牲缓冲层以便于形成彩色滤光片。

14. 发明申请

US20120187280A1 LIGHT SENSOR HAVING IR SUPPRESSION FILTER AND TRANSPARENT SUBSTRATE 有权
标题翻译：具有IR抑制滤光片和透明基板的光传感器
公开(公告)号：US20120187280A1
公开(公告)日：2012-07-26
申请号：US13337855
申请日：2011-12-27
申请人： Nicole D. Kerness , Arkadii V. Samoilov , Zhihai Wang , Joy T. Jones
发明人： Nicole D. Kerness , Arkadii V. Samoilov , Zhihai Wang , Joy T. Jones
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/02327 , G01S17/58 , H01L27/1446 , H01L31/102 , H01L31/112 , H01L31/167 , H01L31/18
摘要： Techniques are described to furnish an IR suppression filter, or any other interference based filter, that is formed on a transparent substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate. The photodetectors are configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a transparent substrate. The light sensor may also include a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer.
摘要翻译：描述了将技术描述为在光传感器的透明基板上形成的IR抑制滤波器或任何其它基于干涉的滤波器。在一个或多个实施方式中，光传感器包括具有表面的基板。在衬底中形成一个或多个光电检测器。光电检测器被配置为检测光并响应于此提供信号。构造成阻挡红外光到达表面的IR抑制滤光器形成在透明基板上。光传感器还可以包括布置在表面上的多个彩色滤光片。彩色通过滤光器被配置为过滤可见光以将有限的波长光中的光传递到一个或多个光电检测器。缓冲层设置在表面上并且被配置为封装多个彩色通过滤光片和粘附层。

15. 发明授权

US07413984B2 Multi-step process for forming a barrier film for use in copper layer formation 有权
标题翻译：用于形成用于铜层形成的阻挡膜的多步法
公开(公告)号：US07413984B2
公开(公告)日：2008-08-19
申请号：US11733673
申请日：2007-04-10
申请人： Wilbur G. Catabay , Zhihai Wang , Ping Li
发明人： Wilbur G. Catabay , Zhihai Wang , Ping Li
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76859 , H01L21/76864 , H01L21/76871 , H01L21/76873 , H01L21/76874 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention include a method for forming a copper interconnect having a bi-layer copper barrier layer. The method comprises the steps of providing a substrate with a low-K dielectric insulating layer and an opening in the insulating layer. A first barrier layer of tantalum/tantalum nitride is formed on the insulating layer and in the opening. A second barrier layer consisting of a material selected from the group of palladium, chromium, tantalum, magnesium, and molybdenum is formed on the first barrier layer. A copper seed layer is formed on the second barrier layer and implanted with barrier ions and a bulk copper layer is formed on the seed layer. The substrate is annealed and subject to further processing which can include planarization.
摘要翻译：本发明的实施例包括一种形成具有双层铜阻挡层的铜互连的方法。该方法包括以下步骤：在绝缘层中提供具有低K电介质绝缘层和开口的衬底。在绝缘层和开口中形成钽/氮化钽的第一阻挡层。在第一阻挡层上形成由选自钯，铬，钽，镁和钼的材料构成的第二阻挡层。在第二阻挡层上形成铜籽晶层，并注入势垒离子，并在籽晶层上形成体铜层。将衬底退火并进行可包括平坦化的进一步加工。

16. 发明授权

US07259462B1 Interconnect dielectric tuning 有权
标题翻译：互连电介质调谐
公开(公告)号：US07259462B1
公开(公告)日：2007-08-21
申请号：US11419548
申请日：2006-05-22
申请人： Wai Lo , Hong Lin , Shiqun Gu , Wilbur G. Catabay , Zhihai Wang , Wei-Jen Hsia
发明人： Wai Lo , Hong Lin , Shiqun Gu , Wilbur G. Catabay , Zhihai Wang , Wei-Jen Hsia
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/7682 , H01L21/76838 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An improvement to a method of forming an integrated circuit. An etch stop layer is formed to overlie the front end processing layers of the integrated circuit. Support structures are formed that are disposed so as to support electrically conductive interconnects on various levels of the integrated circuit. Substantially all of the non electrically conductive layers above the etch stop layer that were formed during the fabrication of the interconnects are removed.
摘要翻译：对形成集成电路的方法的改进。形成蚀刻停止层以覆盖集成电路的前端处理层。形成支撑结构，其被布置为支撑集成电路的各个级别上的导电互连。基本上去除了在制造互连期间形成的蚀刻停止层上方的所有非导电层。

17. 发明授权

US06569751B1 Low via resistance system 有权
标题翻译：低通电阻系统
公开(公告)号：US06569751B1
公开(公告)日：2003-05-27
申请号：US09617550
申请日：2000-07-17
申请人： Prabhakar P. Tripathi , Zhihai Wang , Weidan Li
发明人： Prabhakar P. Tripathi , Zhihai Wang , Weidan Li
IPC分类号： H01L2128
CPC分类号： H01L21/76846 , C23C14/025 , C23C14/0641 , C23C14/345 , H01L21/2855
摘要： A method of forming a metallization interconnection system within a via. A first liner layer of titanium is deposited to a first thickness in the following manner. A substrate containing the via is placed within an ion metal plasma deposition chamber that contains a titanium target. The ion metal plasma deposition chamber is evacuated to a first base pressure. A first flow of argon is introduced to the ion metal plasma deposition chamber at a first deposition pressure. The substrate is biased to a first voltage. A plasma within the ion metal plasma deposition chamber is energized at a first power for a first length of time. A second liner layer of TixNy is deposited to a second thickness on top of the first liner layer of titanium in the following manner. A first flow of nitrogen and a second flow of argon are introduced to the ion metal plasma deposition chamber at a second deposition pressure. The substrate is biased to a second voltage. The plasma within the ion metal plasma deposition chamber is energized at a second power for a second length of time, after which the substrate is removed from the ion metal plasma deposition chamber. Finally, a third liner layer of titanium nitride is deposited in a second deposition chamber, and a plug of tungsten is deposited.
摘要翻译：在通孔内形成金属化互连系统的方法。钛的第一衬里层以下列方式沉积到第一厚度。将含有通孔的基板放置在含有钛靶的离子金属等离子体沉积室内。离子金属等离子体沉积室被抽空到第一基础压力。在第一沉积压力下将第一氩气流引入离子金属等离子体沉积室。衬底被偏压到第一电压。离子金属等离子体沉积室内的等离子体在第一时间内以第一功率通电。 TixNy的第二衬里层以下列方式沉积在钛的第一内衬层的顶部上的第二厚度上。在第二沉积压力下，将第一氮气流和第二氩气流引入离子金属等离子体沉积室。衬底被偏压到第二电压。离子金属等离子体沉积室内的等离子体以第二功率被施加第二时间长度，之后从离子金属等离子体沉积室中除去衬底。最后，在第二沉积室中沉积氮化钛的第三衬里层，并沉积钨塞。

18. 发明授权

US06472314B1 Diamond barrier layer 有权
标题翻译：金刚石阻挡层
公开(公告)号：US06472314B1
公开(公告)日：2002-10-29
申请号：US09968944
申请日：2001-10-02
申请人： Wilbur G. Catabay , Zhihai Wang
发明人： Wilbur G. Catabay , Zhihai Wang
IPC分类号： H01L21768
CPC分类号： H01L21/76846
摘要： A method of forming an electrically conductive interconnect on a substrate. An interconnection feature is formed on the substrate, and a first barrier layer is deposited on the substrate. The first barrier layer consists essentially of a diamond film. A seed layer consisting essentially of copper is deposited on the substrate, and a conductive layer consisting essentially of copper is deposited on the substrate. Thus, by using a diamond film as the barrier layer, diffusion of the copper from the conductive layer into the material of the substrate is substantially reduced and preferably eliminated.
摘要翻译：一种在衬底上形成导电互连的方法。在衬底上形成互连特征，并且在衬底上沉积第一阻挡层。第一阻挡层基本上由金刚石膜组成。基本上由铜组成的晶种层沉积在基片上，并且基本上由铜组成的导电层沉积在基片上。因此，通过使用金刚石膜作为阻挡层，铜从导电层扩散到基板的材料中显着地减少并且优选地被消除。

19. 发明授权

US06087726A Metal interconnect stack for integrated circuit structure 有权
标题翻译：金属互连堆栈用于集成电路结构
公开(公告)号：US06087726A
公开(公告)日：2000-07-11
申请号：US261270
申请日：1999-03-01
申请人： Shouli Steve Hsia , Zhihai Wang , Fred Chen
发明人： Shouli Steve Hsia , Zhihai Wang , Fred Chen
IPC分类号： H01L21/768 , H01L23/532 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76871 , H01L21/76841 , H01L23/53223 , H01L2221/1089 , H01L2924/0002
摘要： A metal interconnect stack for an integrated circuit structure is described comprising a main metal interconnect layer, an underlying TiN barrier layer and a titanium metal seed layer below the TiN barrier layer, and a barrier layer below the titanium metal seed layer to provide protection against chemical interaction between the titanium metal seed layer and an underlying plug in a via. The structure is formed by providing an integrated circuit structure having an insulation layer formed thereon with one or more metal-filled vias or contact openings generally vertically formed therethrough to have an upper surface thereon; forming a lower barrier layer such as a TiN barrier layer over the insulation layer and the upper surface of the metal in the one or more metal-filled vias; and subsequently forming the titanium seed layer over the lower TiN barrier layer. This new first TiN barrier layer then separates the surface of the metal in the one or more vias from the titanium seed layer in the metal interconnect stack to inhibit galvanic action between the metal in the one or more vias and the titanium seed layer. Preferably, the main metal interconnect layer is provided with a crystallographic orientation to enhance the electron migration of the main metal interconnect layer. To achieve this orientation in the main metal interconnect layer, the main titanium nitride barrier layer is preferably also provided with crystallographic orientation and the titanium metal seed layer functions as a seed layer for the second TiN barrier layer which will, in turn, act as a seed layer for the main metal interconnect layer. An optional third TiN barrier layer may be formed over the main metal interconnect layer.
摘要翻译：描述了一种用于集成电路结构的金属互连堆叠，其包括主金属互连层，下面的TiN阻挡层和TiN阻挡层下面的钛金属种子层，以及在钛金属种子层下面的阻挡层以提供防止化学钛金属种子层与通孔中的下面的塞子之间的相互作用。该结构通过提供一种集成电路结构形成，该集成电路结构具有在其上形成有一个或多个金属填充的通孔或通过其垂直形成的接触开口的绝缘层，以在其上具有上表面; 在一个或多个金属填充的通孔中在绝缘层和金属的上表面上形成诸如TiN阻挡层的下阻挡层; 随后在下部TiN阻挡层上形成钛籽晶层。然后，该新的第一TiN阻挡层将金属互连叠层中的一个或多个通孔中的金属表面与钛籽晶层分离，以抑制一个或多个通孔中的金属与钛籽晶层之间的电流作用。优选地，主金属互连层具有<111>晶体取向以增强主金属互连层的电子迁移。为了在主金属互连层中实现这种<111>取向，主要的氮化钛阻挡层优选还具有<111>晶体取向，并且钛金属种子层用作第二TiN阻挡层的种子层，又作为主金属互连层的籽晶层。可以在主金属互连层上形成可选的第三TiN阻挡层。

20. 发明申请

US20120269117A1 METHOD AND SYSTEM FOR IMPLEMENTING DOMAIN SELECTION DURING THE TERMINATED CALL 有权
标题翻译：终止呼叫期间实施域选择的方法和系统
公开(公告)号：US20120269117A1
公开(公告)日：2012-10-25
申请号：US13259440
申请日：2010-04-23
申请人： Ying Hu , Zhijun Li , Changle Zou , Zhenhua Xie , Zhihai Wang
发明人： Ying Hu , Zhijun Li , Changle Zou , Zhenhua Xie , Zhihai Wang
IPC分类号： H04W40/02
CPC分类号： H04L65/1016 , H04L45/04 , H04L65/1046 , H04L65/1063 , H04L65/1069 , H04L65/1073 , H04W8/04 , H04W8/12 , H04W40/02 , H04W48/18 , Y02D30/30
摘要： The present invention discloses a method and a system for implementing domain selection during a terminated call, wherein, the method comprises: an application server (AS) sending, according to a received call request message, a query request message to a home subscriber server (HSS); the HSS querying, according to the query request message, a packet switching (PS) domain mobility management network element to obtain information of a called terminal and/or a network accessed by the called terminal in the call request message; the HSS feeding back the obtained information of the called terminal and/or the network accessed by the called terminal to the AS; and the AS selecting a domain to which a call message is to be routed according to the information of the called terminal and/or the network accessed by the called terminal. The present invention can greatly reduce the number of the signalings between the PS domain mobility management element and the HSS, avoids various limitations of the signaling loads generated by the HSS on network deployment, is convenient for the network deployment, and ensures the implementation of services.
摘要翻译：本发明公开了一种在终止呼叫期间实现域选择的方法和系统，其中，所述方法包括：应用服务器（AS）根据所接收的呼叫请求消息向所述归属订户服务器发送查询请求消息（ HSS）; HSS根据查询请求消息查询分组交换（PS）域移动性管理网元，以在呼叫请求消息中获取被叫终端和/或由被叫终端接入的网络的信息; HSS将被叫终端获得的信息和/或由被叫终端接入的网络反馈给AS; AS根据被叫终端的信息和/或由被叫终端接入的网络，选择要路由呼叫消息的域。本发明可以大大减少PS域移动性管理单元与HSS之间的信号数量，避免了HSS在网络部署中产生的信令负载的各种限制，方便网络部署，保证业务的实现。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式