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11. 发明申请

US20130095690A1 SPRING-LOADED CONTACTS 有权
公开(公告)号：US20130095690A1
公开(公告)日：2013-04-18
申请号：US13492905
申请日：2012-06-10
申请人： Min Chul Kim , John DiFonzo , Nathan N. Ng , Chris Liqtenberg , Bradley Hamel , Rian Leichter , Sridhar Sundaram , Josh Pong , Vince Duperron , Zheng Gao
发明人： Min Chul Kim , John DiFonzo , Nathan N. Ng , Chris Liqtenberg , Bradley Hamel , Rian Leichter , Sridhar Sundaram , Josh Pong , Vince Duperron , Zheng Gao
IPC分类号： H01R13/62
CPC分类号： H01R13/2471 , H01R13/17 , H01R13/2421 , H01R13/62
摘要： Spring-loaded contacts having an improved reliability. One example may provide spring-loaded contacts having a reduced likelihood of entanglement between a spring and a plunger. For example, a piston may be placed between a plunger and a spring. The piston may have a head portion that is wider than the diameter of the spring and located between the spring and the plunger to isolate the spring and the plunger. In these and other examples, an additional object, such as a sphere, may be placed between the plunger and spring. In another example, two additional objects, such as two spheres, may be placed between a plunger and piston.

12. 发明申请

US20130021697A1 MAGNETIC SENSOR WITH PERPENDICULAR ANISOTROPHY FREE LAYER AND SIDE SHIELDS 有权
标题翻译：具有独立自由层和边界的磁传感器
公开(公告)号：US20130021697A1
公开(公告)日：2013-01-24
申请号：US13354838
申请日：2012-01-20
申请人： Dimitar V. Dimitrov , Zheng Gao , Wonjoon Jung , Paul Edward Anderson , Olle Gunnar Heinonen
发明人： Dimitar V. Dimitrov , Zheng Gao , Wonjoon Jung , Paul Edward Anderson , Olle Gunnar Heinonen
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , G01R33/098 , G11B5/3912 , H01L43/08
摘要： A tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield. The sensor stack includes a reference magnetic element having a reference magnetization orientation direction and a free magnetic element having a free magnetization orientation direction substantially perpendicular to the reference magnetization orientation direction. A non-magnetic spacer layer separates the reference magnetic element from the free magnetic element. A first side magnetic shield and a second side magnetic shield is disposed between the top magnetic shield from a bottom magnetic shield, and the sensor stack is between the first side magnetic shield and the second side magnetic shield. The first side magnetic shield and the second side magnetic shield electrically insulates the top magnetic shield from a bottom magnetic shield.
摘要翻译：隧道磁阻读取器包括将顶部磁屏蔽与底部磁屏蔽分开的传感器堆叠。传感器堆叠包括具有参考磁化取向方向的参考磁性元件和具有基本上垂直于参考磁化定向方向的自由磁化取向方向的自由磁性元件。非磁性间隔层将参考磁性元件与自由磁性元件分开。第一侧磁屏蔽和第二侧磁屏蔽设置在顶部磁屏蔽与底部磁屏蔽之间，传感器堆叠位于第一侧磁屏蔽和第二侧磁屏蔽之间。第一侧磁屏蔽和第二侧磁屏蔽将顶部磁屏蔽与底部磁屏蔽电绝缘。

13. 发明申请

US20130001718A1 MAGNETIC TUNNEL JUNCTION WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER 审中-公开
标题翻译：具有电子反射绝缘间隔的磁性隧道结
公开(公告)号：US20130001718A1
公开(公告)日：2013-01-03
申请号：US13611230
申请日：2012-09-12
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
IPC分类号： H01L29/82
CPC分类号： G11C11/161
摘要： Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.
摘要翻译：公开了具有镜面绝缘间隔物的磁隧道结。磁性隧道结包括自由磁性层，参考磁性层，将自由磁性层与参考磁性层分离的电绝缘和非磁性隧道势垒层，以及电绝缘和电子反射层，其被定位成反射至少一个部分电子返回自由磁性层。

14. 发明申请

US20120127615A1 TMR READER STRUCTURE AND PROCESS FOR FABRICATION 有权
标题翻译： TMR读取器结构和制造过程
公开(公告)号：US20120127615A1
公开(公告)日：2012-05-24
申请号：US12954334
申请日：2010-11-24
申请人： Liubo Hong , Honglin Zhu , Tsann Lin , Zheng Gao
发明人： Liubo Hong , Honglin Zhu , Tsann Lin , Zheng Gao
IPC分类号： G11B5/33 , G01R33/32
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/3163 , G11B5/3932
摘要： The present invention generally relates to a TMR reader and a method for its manufacture. The TMR reader discussed herein adds a shield layer to the sensor structure. The shield layer is deposited over the capping layer so that the shield layer and the capping layer collectively protect the free magnetic layer within the sensor structure from damage during further processing. Additionally, the hard bias layer is shaped such that the entire hard bias layer underlies the hard bias capping layer so that a top lead layer is not present. By eliminating the top lead layer and including a shield layer within the sensor structure, the read gap is reduced while still protecting the free magnetic layer during later processing.
摘要翻译：本发明一般涉及TMR读取器及其制造方法。本文中讨论的TMR读取器将一个屏蔽层添加到传感器结构。屏蔽层沉积在覆盖层上，使得屏蔽层和覆盖层共同保护传感器结构内的自由磁性层免受进一步处理期间的损坏。此外，硬偏压层被成形为使得整个硬偏压层位于硬偏压覆盖层的下面，使得顶部引线层不存在。通过消除顶部引线层并且在传感器结构内包括屏蔽层，读取间隙减小，同时在稍后处理期间仍然保护自由磁性层。

15. 发明授权

US08111505B2 Computer housing 有权
标题翻译：电脑房
公开(公告)号：US08111505B2
公开(公告)日：2012-02-07
申请号：US12580922
申请日：2009-10-16
申请人： John Raff , Bartley K. Andre , Laura DeForest , John C. DiFonzo , Zheng Gao , Michelle Goldberg , Bradley J. Hamel , Timothy S. Hibbard , Ron Hopkinson , William F. Leggett , Chris Ligtenberg , Gavin J. Reid , Charles A. Schwalbach
发明人： John Raff , Bartley K. Andre , Laura DeForest , John C. DiFonzo , Zheng Gao , Michelle Goldberg , Bradley J. Hamel , Timothy S. Hibbard , Ron Hopkinson , William F. Leggett , Chris Ligtenberg , Gavin J. Reid , Charles A. Schwalbach
IPC分类号： G06F1/16
CPC分类号： G06F1/1633 , G06F1/1616 , G06F1/1637 , G06F1/1656 , G06F1/1658 , H05K5/0243 , Y10T29/49826
摘要： A multipart computer housing is described. The multipart computer housing includes at least a structural support layer and a body. The body includes at least an outer layer formed of lightweight flexible material and an inner layer attached to the outer layer. The inner layer is connected to the support layer forming a load path between the inner layer and the structural support layer. A load applied to the multipart computer housing is transferred by way of the load path to the support layer without substantially affecting the outer layer.
摘要翻译：描述了多部分计算机外壳。多部分计算机外壳至少包括结构支撑层和主体。该主体至少包括由轻质柔性材料形成的外层和连接到外层的内层。内层连接到支撑层，形成内层和结构支撑层之间的载荷路径。施加到多部分计算机外壳的负载通过负载路径传递到支撑层而基本上不影响外层。

16. 发明申请

US20120021535A1 MAGNETIC STACK WITH OXIDE TO REDUCE SWITCHING CURRENT 有权
公开(公告)号：US20120021535A1
公开(公告)日：2012-01-26
申请号：US13248360
申请日：2011-09-29
申请人： Xiaohua Lou , Yuankai Zheng , Wenzhong Zhu , Wei Tian , Zheng Gao
发明人： Xiaohua Lou , Yuankai Zheng , Wenzhong Zhu , Wei Tian , Zheng Gao
IPC分类号： H01L21/02
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/1659 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F41/303 , H01L43/12
摘要： A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

17. 发明申请

US20110164335A1 MAGNETIC SENSOR INCLUDING A FREE LAYER HAVING PERPENDICULAR TO THE PLANE ANISOTROPY 有权
标题翻译：磁性传感器，包括一个具有平板电脑平台的自由层
公开(公告)号：US20110164335A1
公开(公告)日：2011-07-07
申请号：US13048521
申请日：2011-03-15
申请人： Song S. Xue , Zheng Gao , Shaoping Li , Kaizhong Gao , Dimitar V. Dimitrov , Konstantin Nikolaev , Patrick J. Ryan
发明人： Song S. Xue , Zheng Gao , Shaoping Li , Kaizhong Gao , Dimitar V. Dimitrov , Konstantin Nikolaev , Patrick J. Ryan
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.
摘要翻译：磁传感器包括具有第一磁化方向的参考层和具有基本上垂直于第一磁化方向并且基本上垂直于自由层组件的每个层的平面的有效磁化方向的自由层组件。间隔层位于参考层和自由层之间，信号增强层与隔离层相对的一侧交换耦合到自由层组件。

18. 发明授权

US07936598B2 Magnetic stack having assist layer 有权
标题翻译：具有辅助层的磁性堆叠
公开(公告)号：US07936598B2
公开(公告)日：2011-05-03
申请号：US12431162
申请日：2009-04-28
申请人： Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Haiwen Xi
发明人： Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Haiwen Xi
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01L43/08
摘要： A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.
摘要翻译：一种具有铁磁自由层和铁磁性固定参考层的磁存储单元，每个具有面外磁各向异性和面外磁化取向，并可通过自旋转矩切换。电池包括靠近自由层的铁磁辅助层，辅助层具有小于约500Oe的低磁各向异性。辅助层可具有面内或面外各向异性。

19. 发明授权

US07929259B2 Magnetic sensing device including a sense enhancing layer 有权
标题翻译：磁感测装置包括感应增强层
公开(公告)号：US07929259B2
公开(公告)日：2011-04-19
申请号：US12816967
申请日：2010-06-16
申请人： Zheng Gao , Brian W. Karr , Song Xue , Eric L. Granstrom , Khuong T. Tran , Yi X. Li
发明人： Zheng Gao , Brian W. Karr , Song Xue , Eric L. Granstrom , Khuong T. Tran , Yi X. Li
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , Y10T428/1114 , Y10T428/1121
摘要： A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 Ω·μm2.
摘要翻译：磁传感器包括具有在第一磁性部分和第二磁性部分之间的第一磁性部分，第二磁性部分和阻挡层的传感器堆叠。第一磁性部分和第二磁性部分中的至少一个包括多层结构，其具有与阻挡层相邻的具有正的磁致伸缩的第一磁性层，第二磁性层以及第一磁性层和第二磁性层之间的中间层层。当磁传感器的电阻面积（RA）积为约1.0＆OHgr·μm2时，磁传感器具有至少约80％的MR比。

20. 发明申请

US20110085373A1 SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD 有权
标题翻译：旋转转矩记忆自参考读取方法
公开(公告)号：US20110085373A1
公开(公告)日：2011-04-14
申请号：US12968441
申请日：2010-12-15
申请人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
发明人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
IPC分类号： G11C11/16
CPC分类号： G11C11/1673
摘要： Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.
摘要翻译：公开了自参考读取磁隧道结数据单元方法。一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。磁性隧道结数据单元具有第一电阻状态。读取电压足以切换磁性隧道结数据单元电阻。该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。

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