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11. 发明授权

US5497255A Spacial light modulation device including a pixel electode layer and a method for manufacturing the same 失效
标题翻译：包括像素电极层的空间光调制装置及其制造方法
公开(公告)号：US5497255A
公开(公告)日：1996-03-05
申请号：US330589
申请日：1994-10-28
申请人： Tetsuhiro Yamazaki , Hiromitsu Takenaka , Yuichi Kuromizu
发明人： Tetsuhiro Yamazaki , Hiromitsu Takenaka , Yuichi Kuromizu
IPC分类号： G02F1/1343 , G02F1/135 , G02F1/1335
CPC分类号： G02F1/135 , G02F1/134336
摘要： A spacial light modulation device is composed of a photoconductive layer, a pixel electrode layer, a dielectric reflection layer, and a liquid crystal layer all laminated in sequence between first and second drive electrode layers. The pixel electrode layer includes a plurality of pixel electrodes partitioned by an insulating substance layer and arranged at predetermined intervals. In particular, to obtain higher contrast and higher resolution of the modulated and reflected light by the device, the surface area of each of the pixel electrodes formed on the photoconductive layer side is determined smaller than that formed on the dielectric reflection layer side. That is, in the pixel electrode layer, a plurality of square-shaped pixel electrodes are arranged into a matrix pattern at predetermined intervals. Each of the square-shaped pixel electrode is composed of a Schottky contact portion in contact with the photoconductive layer and a pixel composing portion in contact with the dielectric reflection layer. The contact area of the Schottky contact portion with the photoconductive layer is determined smaller than the contact area of the pixel composing portion with the dielectric reflection layer. It is also preferable that a dielectric planarized layer is further formed between the pixel electrode layer and the dielectric reflection layer to planarize the surface of the dielectric reflection layer.
摘要翻译：空间光调制装置由在第一和第二驱动电极层之间依次层叠的光电导层，像素电极层，电介质反射层和液晶层构成。像素电极层包括由绝缘物质层分隔并以预定间隔布置的多个像素电极。特别地，为了通过器件获得较高的对比度和较高的调制和反射光的分辨率，形成在光电导层侧的每个像素电极的表面积被确定为小于在介电反射层侧形成的像素电极的表面积。也就是说，在像素电极层中，多个方形像素电极以预定间隔排列成矩阵图案。每个方形像素电极由与光电导层接触的肖特基接触部分和与电介质反射层接触的像素组成部分组成。确定肖特基接触部分与光电导层的接触面积小于像素构成部分与电介质反射层的接触面积。还优选在像素电极层和电介质反射层之间进一步形成介质平坦化层，以平坦化介电反射层的表面。

12. 发明授权

US07858410B2 Surface emitting semiconductor laser, its manufacturing method, and manufacturing method of electron device 失效
标题翻译：表面发射半导体激光器，其制造方法和电子器件的制造方法
公开(公告)号：US07858410B2
公开(公告)日：2010-12-28
申请号：US12263612
申请日：2008-11-03
申请人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
发明人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
IPC分类号： H01L21/00
CPC分类号： H01S5/18388 , H01S5/0421 , H01S5/18311 , H01S5/18394 , H01S2301/166
摘要： A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.
摘要翻译：提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在作为顶层的p型AlwGa1-wAs层上形成Al氧化物层 p型DBR层，并且形成类似于凹透镜的折射率分布。

13. 发明申请

US20100177799A1 SURFACE LIGHT EMITTING SEMICONDUCTOR LASER ELEMENT 审中-公开
标题翻译：表面发光半导体激光元件
公开(公告)号：US20100177799A1
公开(公告)日：2010-07-15
申请号：US12728982
申请日：2010-03-22
申请人： Yoshiaki WATANABE , Hironobu NARUI , Yuichi KUROMIZU , Yoshinori YAMAUCHI , Yoshiyuki TANAKA
发明人： Yoshiaki WATANABE , Hironobu NARUI , Yuichi KUROMIZU , Yoshinori YAMAUCHI , Yoshiyuki TANAKA
IPC分类号： H01S5/02
CPC分类号： G02B6/4296 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18311 , H01S5/18388 , H01S5/18394 , H01S5/2214 , H01S5/32308 , H01S2301/18 , H01S2301/203
摘要： A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.
摘要翻译：一种表面发光半导体激光元件，包括基板，包括设置在基板上的半导体多层的下反射器，设置在下反射器上的有源层，包括设置在有源层上的半导体多层的上反射器，化合物半导体层，具有用于暴露上反射体并在上反射体上方延伸的第一开口，以及具有第二开口的金属膜，用于暴露设置在第一开口内部并在化合物半导体层上方延伸的上反射体，其中金属膜和化合物半导体层构成复合折射率分布结构，其中复数折射率从第二开口的中心朝向外部改变。还提供了以单峰横向模式发射激光的方法。

14. 发明授权

US07672347B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07672347B2
公开(公告)日：2010-03-02
申请号：US11125703
申请日：2005-05-10
申请人： Yuichi Kuromizu
发明人： Yuichi Kuromizu
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/2202 , H01S5/2215 , H01S5/34326
摘要： A semiconductor light emitting device includes: a substrate; a laminate structure including a first semiconductor layer, an active layer, and a second semiconductor layer; and a current confinement part for limiting a current injection region of the active layer in the second semiconductor layer, or between the active layer and the second semiconductor layer, on the substrate, wherein the current confinement part includes a current confinement layer having a conductive region corresponding to the current injection region of the active layer and a nonconductive region corresponding to a region other than the current injection region of the active layer, and an intermediate layer provided between the current confinement layer and the second semiconductor layer or the active layer in order to prevent a mixed crystal from being formed between the current confinement layer and the second semiconductor layer or the active layer.
摘要翻译：一种半导体发光器件，包括：衬底; 包括第一半导体层，有源层和第二半导体层的层压结构; 以及电流限制部件，用于限制所述衬底上的所述第二半导体层中的有源层或所述有源层和所述第二半导体层之间的有源层的电流注入区域，其中所述电流限制部分包括具有导电区域的电流限制层对应于有源层的电流注入区域和对应于有源层的电流注入区域以外的区域的非导电区域，以及按顺序设置在电流限制层和第二半导体层或有源层之间的中间层以防止在电流限制层和第二半导体层或有源层之间形成混晶。

15. 发明授权

US07515623B2 Surface emitting semiconductor laser, its manufacturing method, and manufacturing method of electron device 失效
标题翻译：表面发射半导体激光器，其制造方法和电子器件的制造方法
公开(公告)号：US07515623B2
公开(公告)日：2009-04-07
申请号：US11143806
申请日：2005-06-02
申请人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
发明人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
IPC分类号： H01S5/00
CPC分类号： H01S5/18388 , H01S5/0421 , H01S5/18311 , H01S5/18394 , H01S2301/166
摘要： A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.
摘要翻译：提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在作为顶层的p型AlwGa1-wAs层上形成Al氧化物层 p型DBR层，并且形成类似于凹透镜的折射率分布。

16. 发明申请

US20050271105A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20050271105A1
公开(公告)日：2005-12-08
申请号：US11125703
申请日：2005-05-10
申请人： Yuichi Kuromizu
发明人： Yuichi Kuromizu
IPC分类号： H01S5/00 , H01S5/183 , H01S5/22 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/2202 , H01S5/2215 , H01S5/34326
摘要： A semiconductor light emitting device includes: a substrate; a laminate structure including a first semiconductor layer, an active layer, and a second semiconductor layer; and a current confinement part for limiting a current injection region of the active layer in the second semiconductor layer, or between the active layer and the second semiconductor layer, on the substrate, wherein the current confinement part includes a current confinement layer having a conductive region corresponding to the current injection region of the active layer and a nonconductive region corresponding to a region other than the current injection region of the active layer, and an intermediate layer provided between the current confinement layer and the second semiconductor layer or the active layer in order to prevent a mixed crystal from being formed between the current confinement layer and the second semiconductor layer or the active layer.
摘要翻译：一种半导体发光器件，包括：衬底; 包括第一半导体层，有源层和第二半导体层的层压结构; 以及电流限制部件，用于限制所述衬底上的所述第二半导体层中的有源层或所述有源层和所述第二半导体层之间的有源层的电流注入区域，其中所述电流限制部分包括具有导电区域的电流限制层对应于有源层的电流注入区域和对应于有源层的电流注入区域以外的区域的非导电区域，以及按顺序设置在电流限制层和第二半导体层或有源层之间的中间层以防止在电流限制层和第二半导体层或有源层之间形成混晶。

17. 发明授权

US07388893B2 Vertical-cavity surface-emitting laser device array and method of manufacturing the same 有权
标题翻译：垂直腔表面发射激光器件阵列及其制造方法
公开(公告)号：US07388893B2
公开(公告)日：2008-06-17
申请号：US11465338
申请日：2006-08-17
申请人： Yoshiaki Watanabe , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiyuki Tanaka
发明人： Yoshiaki Watanabe , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiyuki Tanaka
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/02284 , H01S5/18311 , H01S5/18338 , H01S5/18344 , H01S5/34313 , H01S5/4012 , H01S5/4087 , H01S5/423 , H01S2301/166
摘要： A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.
摘要翻译：通过简单的结构和制造工艺排列具有不同激光波长的多个垂直腔表面发射激光器件，而不增加器件电阻。每个垂直腔表面发射激光器件包括包括有源层和电流限制层的分层结构。层叠结构中的电流限制部分的面积对应于从每个垂直腔表面发射激光器件发射的激光的波长设定。因此，多个垂直腔表面发射激光器件发射具有不同激光波长的激光。

18. 发明申请

US20070086499A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20070086499A1
公开(公告)日：2007-04-19
申请号：US11613586
申请日：2006-12-20
申请人： Tomonori Hino , Hironobu Narui , Takayuki Kawasumi , Tsuyoshi Nagatake , Yuichi Kuromizu , Tadahiko Kawasaki , Noriko Kobayashi , Masaki Shiozaki , Jugo Mitomo , Michiko Komine
发明人： Tomonori Hino , Hironobu Narui , Takayuki Kawasumi , Tsuyoshi Nagatake , Yuichi Kuromizu , Tadahiko Kawasaki , Noriko Kobayashi , Masaki Shiozaki , Jugo Mitomo , Michiko Komine
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01L33/145 , H01S5/0021 , H01S5/22 , H01S5/2215 , H01S5/2231 , H01S5/34326 , H01S2301/14 , H01S2301/18
摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.
摘要翻译：提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为优选为10nm〜1000nm。氧化区域的一侧的宽度是非氧化区域的宽度的一倍以上或其以上的七倍以下。电流限制层与有源层之间的距离优选为50nm以上，500nm以下，更优选为180nm以上。

19. 发明申请

US20060285568A1 VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE ARRAY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：立体孔表面发射激光器阵列及其制造方法
公开(公告)号：US20060285568A1
公开(公告)日：2006-12-21
申请号：US11465338
申请日：2006-08-17
申请人： Yoshiaki Watanabe , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiyuki Tanaka
发明人： Yoshiaki Watanabe , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiyuki Tanaka
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： B82Y20/00 , H01S5/02284 , H01S5/18311 , H01S5/18338 , H01S5/18344 , H01S5/34313 , H01S5/4012 , H01S5/4087 , H01S5/423 , H01S2301/166
摘要： A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.
摘要翻译：通过简单的结构和制造工艺排列具有不同激光波长的多个垂直腔表面发射激光器件，而不增加器件电阻。每个垂直腔表面发射激光器件包括包括有源层和电流限制层的分层结构。层叠结构中的电流限制部分的面积对应于从每个垂直腔表面发射激光器件发射的激光的波长设定。因此，多个垂直腔表面发射激光器件发射具有不同激光波长的激光。

20. 发明授权

US07099364B2 Vertical-cavity surface-emitting laser device array and method of manufacturing the same 有权
标题翻译：垂直腔表面发射激光器件阵列及其制造方法
公开(公告)号：US07099364B2
公开(公告)日：2006-08-29
申请号：US10944386
申请日：2004-09-17
申请人： Yoshiaki Watanabe , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiyuki Tanaka
发明人： Yoshiaki Watanabe , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiyuki Tanaka
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/02284 , H01S5/18311 , H01S5/18338 , H01S5/18344 , H01S5/34313 , H01S5/4012 , H01S5/4087 , H01S5/423 , H01S2301/166
摘要： A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.
摘要翻译：通过简单的结构和制造工艺排列具有不同激光波长的多个垂直腔表面发射激光器件，而不增加器件电阻。每个垂直腔表面发射激光器件包括包括有源层和电流限制层的分层结构。层叠结构中的电流限制部分的面积对应于从每个垂直腔表面发射激光器件发射的激光的波长设定。因此，多个垂直腔表面发射激光器件发射具有不同激光波长的激光。

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