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    • 14. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20130009289A1
    • 2013-01-10
    • US13617483
    • 2012-09-14
    • Yasuyuki ARAIYuko TACHIMURAYohei KANNOMai AKIBA
    • Yasuyuki ARAIYuko TACHIMURAYohei KANNOMai AKIBA
    • H01L23/66
    • H01L27/1266G06K19/025G06K19/07728G06K19/07749H01L27/1214H01L27/13H01L2221/6835H01L2224/73204
    • An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit sandwiched between first and second sealing films, an antenna electrically connected to the integrated circuit, the first sealing film sandwiched between a substrate and the integrated circuit, which includes a plurality of first insulating films and at least one second insulating film sandwiched therebetween, the second sealing film including a plurality of third insulating films and at least one fourth insulating film sandwiched therebetween. The second insulating film has lower stress than the first insulting film and the fourth insulating film has lower stress than the third insulating film. The first and third insulating films are inorganic insulating films.
    • 本发明的目的在于提供一种能够提高半导体元件的可靠性并提高机械强度而不抑制电路规模的半导体装置。 半导体器件包括夹在第一和第二密封膜之间的集成电路,与集成电路电连接的天线,夹在基板和集成电路之间的第一密封膜,其包括多个第一绝缘膜和至少一个第二绝缘膜 夹在其间的绝缘膜,所述第二密封膜包括多个第三绝缘膜和夹在其间的至少一个第四绝缘膜。 第二绝缘膜具有比第一绝缘膜低的应力,并且第四绝缘膜具有比第三绝缘膜更低的应力。 第一和第三绝缘膜是无机绝缘膜。
    • 18. 发明授权
    • Light-emitting device and method for manufacturing the same
    • 发光装置及其制造方法
    • US07598129B2
    • 2009-10-06
    • US10576692
    • 2004-11-05
    • Yohei KannoGen Fujii
    • Yohei KannoGen Fujii
    • H01L21/00H01L21/84
    • H01L27/12H01L27/1285H01L27/1292H01L29/42384H01L29/66765H01L29/78696
    • Especially in case that a light-emitting element composed of layers containing organic compounds or inorganic compounds is driven by a thin film transistor (TFT), a structure having at least two transistors installed with a drive TFT is required to prevent irregularities of ON current of a switching TFT provided to a pixel region. Hence, the simplification of a semiconductor element structure and a process for manufacturing a semiconductor element becomes an urgent task as a large substrate is frequently used. According to the present invention, after that a source region and a drain region are formed, an insulating film serving as a channel protective film is formed to cover a portion for serving as a channel region, then, an island-like semiconductor film is formed. Accordingly, a semiconductor element can be manufactured by using only a metallic mask without forming a resist mask, and so the process can be simplified.
    • 特别是在由薄膜晶体管(TFT)驱动由含有有机化合物或无机化合物的层构成的发光元件的情况下,需要具有安装有驱动TFT的至少两个晶体管的结构来防止导通电流的不均匀性 提供给像素区域的开关TFT。 因此,通常使用大的基板,半导体元件结构的简化和半导体元件的制造工艺成为迫切的任务。 根据本发明,在形成源极区域和漏极区域之后,形成作为沟道保护膜的绝缘膜覆盖用作沟道区域的部分,然后形成岛状半导体膜 。 因此,可以仅使用金属掩模而不形成抗蚀剂掩模来制造半导体元件,因此可以简化该工艺。
    • 20. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20070159335A1
    • 2007-07-12
    • US10587237
    • 2005-02-01
    • Yasuyuki AraiYuko TachimuraYohei KannoMai Akiba
    • Yasuyuki AraiYuko TachimuraYohei KannoMai Akiba
    • G08B13/14H01L23/02
    • H01L27/1266G06K19/025G06K19/07728G06K19/07749H01L27/1214H01L27/13H01L2221/6835H01L2224/73204
    • An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit sandwiched between first and second sealing films, an antenna electrically connected to the integrated circuit, the first sealing film sandwiched between a substrate and the integrated circuit, which includes a plurality of first insulating films and at least one second insulating film sandwiched therebetween, the second sealing film including a plurality of third insulating films and at least one fourth insulating film sandwiched therebetween. The second insulating film has lower stress than the first insulting film and the fourth insulating film has lower stress than the third insulating film. The first and third insulating films are inorganic insulating films.
    • 本发明的目的在于提供一种能够提高半导体元件的可靠性并提高机械强度而不抑制电路规模的半导体装置。 半导体器件包括夹在第一和第二密封膜之间的集成电路,与集成电路电连接的天线,夹在基板和集成电路之间的第一密封膜,其包括多个第一绝缘膜和至少一个第二绝缘膜 夹在其间的绝缘膜,所述第二密封膜包括多个第三绝缘膜和夹在其间的至少一个第四绝缘膜。 第二绝缘膜具有比第一绝缘膜低的应力,并且第四绝缘膜具有比第三绝缘膜更低的应力。 第一和第三绝缘膜是无机绝缘膜。