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11. 发明申请

US20080138955A1 FORMATION OF EPITAXIAL LAYER CONTAINING SILICON 审中-公开
标题翻译：形成含硅的外延层
公开(公告)号：US20080138955A1
公开(公告)日：2008-06-12
申请号：US11609590
申请日：2006-12-12
申请人： Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
发明人： Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L29/7834 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/66628 , H01L29/7848
摘要： Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.
摘要翻译：公开了形成含硅外延层的方法。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施例中，外延层的形成涉及将处理室中的衬底暴露于包括两个或多个硅源（例如硅烷和高级硅烷）的沉积气体。实施例包括在形成外延层期间流动掺杂剂源，例如磷掺杂剂，并且在没有磷掺杂剂的情况下继续沉积硅源气体。

12. 发明授权

US07312128B2 Selective epitaxy process with alternating gas supply 有权
标题翻译：选择性外延过程与交替供气
公开(公告)号：US07312128B2
公开(公告)日：2007-12-25
申请号：US11001774
申请日：2004-12-01
申请人： Yihwan Kim , Arkadii V. Samoilov
发明人： Yihwan Kim , Arkadii V. Samoilov
IPC分类号： H01L21/336
CPC分类号： H01L29/165 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/66628 , H01L29/7834 , H01L29/7848 , Y10S438/933 , Y10S438/969
摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.
摘要翻译：在一个实例中，提出了在衬底表面上外延形成含硅材料的方法，其包括将衬底定位到处理室中。衬底具有单晶表面和至少第二表面，例如非晶表面和/或多晶表面。将衬底暴露于沉积气体，以在第一表面上沉积外延层和在第二表面上沉积多晶层。沉积气体优选地包含硅源和至少第二元素源，例如锗源，碳源和/或其组合。此后，该方法进一步提供将衬底暴露于蚀刻剂气体以蚀刻多晶层和外延层，使得以比外延层更快的速率蚀刻多晶层。该方法还可以包括沉积循环，其包括重复将衬底暴露于沉积和蚀刻剂气体以形成具有预定厚度的含硅材料。

13. 发明申请

US20070082451A1 METHODS TO FABRICATE MOSFET DEVICES USING A SELECTIVE DEPOSITION PROCESS 有权
标题翻译：使用选择性沉积工艺制作MOSFET器件的方法
公开(公告)号：US20070082451A1
公开(公告)日：2007-04-12
申请号：US11539775
申请日：2006-10-09
申请人： ARKADII SAMOILOV , Yihwan Kim , Errol Sanchez , Nicholas Dalida
发明人： ARKADII SAMOILOV , Yihwan Kim , Errol Sanchez , Nicholas Dalida
IPC分类号： H01L21/336
CPC分类号： H01L21/823814 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/28044 , H01L21/28114 , H01L21/823807 , H01L29/165 , H01L29/66242 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/78 , H01L29/7834 , H01L29/7848
摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.
摘要翻译：在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区域的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体，和氢气以在其上沉积第一含硅层。第一含硅层可以选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被蚀刻掉在衬底的电介质材料的表面上。随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。

14. 发明授权

US07132338B2 Methods to fabricate MOSFET devices using selective deposition process 有权
标题翻译：使用选择性沉积工艺制造MOSFET器件的方法
公开(公告)号：US07132338B2
公开(公告)日：2006-11-07
申请号：US10845984
申请日：2004-05-14
申请人： Arkadii V. Samoilov , Yihwan Kim , Errol Sanchez , Nicholas C. Dalida
发明人： Arkadii V. Samoilov , Yihwan Kim , Errol Sanchez , Nicholas C. Dalida
IPC分类号： H01L21/336
CPC分类号： H01L21/823814 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/28044 , H01L21/28114 , H01L21/823807 , H01L29/165 , H01L29/66242 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/78 , H01L29/7834 , H01L29/7848
摘要： In one embodiment, a method for fabricating a silicon-based device on a substrate surface is provided which includes depositing a first silicon-containing layer by exposing the substrate surface to a first process gas comprising Cl2SiH2, a germanium source, a first etchant and a carrier gas and depositing a second silicon-containing layer by exposing the first silicon-containing layer to a second process gas comprising SiH4 and a second etchant. In another embodiment, a method for depositing a silicon-containing material on a substrate surface is provided which includes depositing a first silicon-containing layer on the substrate surface with a first germanium concentration of about 15 at % or more. The method further provides depositing on the first silicon-containing layer a second silicon-containing layer wherein a second germanium concentration of about 15 at % or less, exposing the substrate surface to air to form a native oxide layer, removing the native oxide layer to expose the second silicon-containing layer, and depositing a third silicon-containing layer on the second silicon-containing layer. In another embodiment, a method for depositing a silicon-containing material on a substrate surface is provided which includes depositing epitaxially a first silicon-containing layer on the substrate surface with a first lattice strain, and depositing epitaxially on the first silicon-containing layer a second silicon-containing layer with a second lattice strain greater than the first lattice strain.
摘要翻译：在一个实施例中，提供了一种在衬底表面上制造硅基器件的方法，其包括通过将衬底表面暴露于包含Cl 2 SiH 2的第一工艺气体来沉积第一含硅层，锗源，第一蚀刻剂和载气，并且通过将第一含硅层暴露于包含SiH 4 N 2的第二工艺气体而沉积第二含硅层，和第二蚀刻剂。在另一个实施例中，提供了一种用于在衬底表面上沉积含硅材料的方法，其包括以约15at％或更多的第一锗浓度在衬底表面上沉积第一含硅层。该方法进一步提供了在第一含硅层上沉积第二含硅层，其中第二锗浓度为约15原子％或更低，将基底表面暴露于空气中以形成天然氧化物层，将天然氧化物层去除暴露第二含硅层，并在第二含硅层上沉积第三含硅层。在另一个实施例中，提供了一种用于在衬底表面上沉积含硅材料的方法，其包括以第一晶格应变在衬底表面上外延沉积第一含硅层，并且在第一含硅层上外延沉积第二含硅层具有大于第一晶格应变的第二晶格应变。

15. 发明申请

US20050079691A1 Methods of selective deposition of heavily doped epitaxial SiGe 有权
标题翻译：选择沉积重掺杂外延SiGe的方法
公开(公告)号：US20050079691A1
公开(公告)日：2005-04-14
申请号：US10683937
申请日：2003-10-10
申请人： Yihwan Kim , Arkadii Samoilov
发明人： Yihwan Kim , Arkadii Samoilov
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/78 , H01L29/7848
摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.
摘要翻译：本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时保持在约0.1托至约200托的范围内的压力。沉积气体被提供到处理室，并且包括SiH 4，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂气体。在基板上选择性地并外延生长硅膜或硅锗膜。一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。方法可以包括使用选择性硅锗外延膜的电子器件的制造。

16. 发明授权

US09200367B2 Method and apparatus for gas delivery 有权
公开(公告)号：US09200367B2
公开(公告)日：2015-12-01
申请号：US13191008
申请日：2011-07-26
申请人： Zhiyuan Ye , Yihwan Kim
发明人： Zhiyuan Ye , Yihwan Kim
IPC分类号： C23C16/455 , C23C16/448
CPC分类号： C23C16/4481 , C23C16/45512 , C23C16/45557 , C23C16/45561 , Y10T137/0318 , Y10T137/0329 , Y10T137/0335 , Y10T137/877 , Y10T436/12
摘要： Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.

17. 发明申请

US20130210221A1 SELECTIVE EPITAXIAL GERMANIUM GROWTH ON SILICON-TRENCH FILL AND IN SITU DOPING 有权
标题翻译：选择性外源锗增长在硅胶填料和原位浸渍
公开(公告)号：US20130210221A1
公开(公告)日：2013-08-15
申请号：US13765733
申请日：2013-02-13
申请人： YI-CHIAU HUANG , Jiping Li , Miao Jin , Bingxi Sun Wood , Errol Antonio C. Sanchez , Yihwan Kim
发明人： YI-CHIAU HUANG , Jiping Li , Miao Jin , Bingxi Sun Wood , Errol Antonio C. Sanchez , Yihwan Kim
IPC分类号： H01L21/02
CPC分类号： H01L21/02694 , H01L21/02532 , H01L21/0262 , H01L21/02647 , H01L21/02675
摘要： Methods and apparatus for forming a germanium containing film on a patterned substrate are described. The patterned substrate is a silicon, or silicon containing material, and may have a mask material formed on a surface thereof. The germanium containing material is formed selectively on exposed silicon in the recesses of the substrate, and an overburden of at least 50% is formed on the substrate. The germanium containing layer is thermally treated using pulsed laser radiation, which melts a portion of the overburden, but does not melt the germanium containing material in the recesses. The germanium containing material in the recesses is typically annealed, at least in part, by the thermal treatment. The overburden is then removed.
摘要翻译：描述了在图案化衬底上形成含锗膜的方法和装置。图案化衬底是硅或含硅材料，并且可以在其表面上形成掩模材料。含锗材料在衬底的凹槽中的暴露的硅上选择性地形成，并且在衬底上形成至少50％的覆盖层。使用脉冲激光辐射对含锗层进行热处理，所述脉冲激光辐射熔化上覆层的一部分，但不熔化凹陷中的含锗材料。凹陷中的含锗材料通常通过热处理至少部分退火。然后卸下覆盖层。

18. 发明授权

US08394196B2 Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon 有权
标题翻译：含硅和碳的原位磷掺杂外延层的形成
公开(公告)号：US08394196B2
公开(公告)日：2013-03-12
申请号：US11609826
申请日：2006-12-12
申请人： Yihwan Kim
发明人： Yihwan Kim
IPC分类号： C30B21/04
CPC分类号： H01L29/7848 , H01L21/02529 , H01L21/02576 , H01L21/0262 , H01L21/02636 , H01L29/66628 , H01L29/7834
摘要： Methods for formation epitaxial layers containing silicon and carbon doped with phosphorus are disclosed. The pressure is maintained equal to or above 100 torr during deposition. The methods result in the formation of a film including substitutional carbon. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices.
摘要翻译：公开了含有掺杂有磷的硅和碳的外延层的形成方法。在沉积期间压力保持等于或大于100托。该方法导致形成包括取代碳的膜。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。

19. 发明申请

US20120202338A1 EPITAXY OF HIGH TENSILE SILICON ALLOY FOR TENSILE STRAIN APPLICATIONS 有权
标题翻译：用于拉伸应变应变的高强度硅合金外延
公开(公告)号：US20120202338A1
公开(公告)日：2012-08-09
申请号：US13193576
申请日：2011-07-28
申请人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/0257 , H01L21/02576 , H01L21/0262 , H01L29/1054 , H01L29/78
摘要： Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, and is formed without the addition of carbon. A phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater increases the tensile strain of the deposited layer, and thus, improves channel mobility. Since the epitaxial layer is substantially free of carbon, the epitaxial layer does not suffer from film formation and quality issues commonly associated with carbon-containing epitaxial layers.
摘要翻译：本发明的实施例一般涉及在半导体器件上形成硅外延层的方法。所述方法包括在增加的压力和降低的温度下在衬底上形成硅外延层。硅外延层的磷浓度约为1×1021原子/立方厘米或更大，并且不添加碳形成。大约1×1021原子/立方厘米或更大的磷浓度增加沉积层的拉伸应变，从而提高通道迁移率。由于外延层基本上不含碳，外延层不会受到成膜和通常与含碳外延层相关的质量问题的影响。

20. 发明申请

US20120034761A1 METHOD OF REMOVING CONTAMINANTS AND NATIVE OXIDES FROM A SUBSTRATE SURFACE 有权
标题翻译：从基底表面去除污染物和原生氧化物的方法
公开(公告)号：US20120034761A1
公开(公告)日：2012-02-09
申请号：US13177409
申请日：2011-07-06
申请人： Satheesh Kuppurao , Manish Hemkar , Vinh Tran , Yihwan Kim
发明人： Satheesh Kuppurao , Manish Hemkar , Vinh Tran , Yihwan Kim
IPC分类号： H01L21/322
CPC分类号： H01L21/02052 , H01L21/02046 , H01L21/02238 , H01L21/67109 , H01L21/6719
摘要： Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate.
摘要翻译：本发明的实施方案一般涉及从基底表面去除污染物和天然氧化物的方法。所述方法通常包括将其上具有氧化物层的衬底暴露于氧化源。氧化源氧化氧化层下面的衬底的上部以形成厚度增加的氧化物层。然后去除具有增加的厚度的氧化物层以暴露衬底的干净的表面。去除氧化物层通常包括去除存在于氧化物层中和氧化物层上的污染物，特别是存在于氧化物层和衬底的界面处的污染物。然后可以在衬底的清洁表面上形成外延层。

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