会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 15. 发明授权
    • Magnetoresistive element and magnetic head
    • 磁阻元件和磁头
    • US07855859B2
    • 2010-12-21
    • US12005273
    • 2007-12-27
    • Shinji HaraKoji ShimazawaYoshihiro TsuchiyaTomohito MizunoTsuyoshi IchikiToshiyuki Ayukawa
    • Shinji HaraKoji ShimazawaYoshihiro TsuchiyaTomohito MizunoTsuyoshi IchikiToshiyuki Ayukawa
    • G11B5/33
    • G01R33/098B82Y25/00G01R33/093G11B5/3906H01L43/08
    • In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in response to an external magnetic field. The spacer layer and the second ferromagnetic layer are stacked in this order on the first ferromagnetic layer. The first ferromagnetic layer includes a plurality of ferromagnetic material layers stacked, and an insertion layer made of a nonmagnetic material and inserted between respective two of the ferromagnetic material layers that are adjacent to each other along the direction in which the layers are stacked. The ferromagnetic material layers and the spacer layer each include a component whose crystal structure is a face-centered cubic structure. The spacer layer and the insertion layer are each composed of an element having an atomic radius greater than that of at least one element constituting the ferromagnetic material layers.
    • 在MR元件中,第一和第二铁磁层通过间隔层彼此反铁磁耦合,并且当不施加外部磁场并且响应于外部磁场改变方向时,具有相反方向的磁化。 间隔层和第二铁磁层依次堆叠在第一铁磁层上。 第一铁磁层包括堆叠的多个铁磁材料层和由非磁性材料制成的插入层,并且插入在彼此相邻的两个铁磁材料层之间,沿堆叠层的方向相邻。 铁磁材料层和间隔层各自包括晶体结构为面心立方结构的成分。 间隔层和插入层各自由原子半径大于构成铁磁体层的至少一个元素的原子半径的元素构成。
    • 16. 发明申请
    • MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM
    • US20090290264A1
    • 2009-11-26
    • US12126567
    • 2008-05-23
    • Toshiyuki AyukawaTakahiko MachitaDaisuke MiyauchiTsutomu ChouKoji ShimazawaShinji HaraTomohito MizunoYoshihiro Tsuchiya
    • Toshiyuki AyukawaTakahiko MachitaDaisuke MiyauchiTsutomu ChouKoji ShimazawaShinji HaraTomohito MizunoYoshihiro Tsuchiya
    • G11B5/33
    • G11B5/398B82Y25/00G01R33/093G11B5/3932
    • The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device. The framework has a front frame-constituting portion located on a medium opposite plane side in front and near where the magnetoresistive unit is positioned, and any other frame portion. The any other frame portion partially comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The bias magnetic field-applying layer is constructed by repeating the stacking of a multilayer unit at least twice or up to 50 times, wherein the multilayer unit comprises a nonmagnetic underlay layer and a high-coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently sent out to the front frame-constituting portion. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with a magnetic flux going all the way around the framework, and turns the magnetization of the front frame-constituting portion into a single domain. It is thus possible to make the domain control of the shield layers much more stable, achieve remarkable improvements in resistance to an external magnetic field, and make the operation of the device much more reliable.
    • 17. 发明申请
    • Magnetoresistive element and magnetic head
    • 磁阻元件和磁头
    • US20090168264A1
    • 2009-07-02
    • US12005273
    • 2007-12-27
    • Shinji HaraKoji ShimazawaYoshihiro TsuchiyaTomohito MizunoTsuyoshi IchikiToshiyuki Ayukawa
    • Shinji HaraKoji ShimazawaYoshihiro TsuchiyaTomohito MizunoTsuyoshi IchikiToshiyuki Ayukawa
    • G11B5/33
    • G01R33/098B82Y25/00G01R33/093G11B5/3906H01L43/08
    • In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in response to an external magnetic field. The spacer layer and the second ferromagnetic layer are stacked in this order on the first ferromagnetic layer. The first ferromagnetic layer includes a plurality of ferromagnetic material layers stacked, and an insertion layer made of a nonmagnetic material and inserted between respective two of the ferromagnetic material layers that are adjacent to each other along the direction in which the layers are stacked. The ferromagnetic material layers and the spacer layer each include a component whose crystal structure is a face-centered cubic structure. The spacer layer and the insertion layer are each composed of an element having an atomic radius greater than that of at least one element constituting the ferromagnetic material layers.
    • 在MR元件中,第一和第二铁磁层通过间隔层彼此反铁磁耦合,并且当不施加外部磁场并且响应于外部磁场改变方向时,具有相反方向的磁化。 间隔层和第二铁磁层依次堆叠在第一铁磁层上。 第一铁磁层包括堆叠的多个铁磁材料层和由非磁性材料制成的插入层,并且插入在彼此相邻的两个铁磁材料层之间,沿堆叠层的方向相邻。 铁磁材料层和间隔层各自包括晶体结构为面心立方结构的成分。 间隔层和插入层各自由原子半径大于构成铁磁体层的至少一个元素的原子半径的元素构成。