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11. 发明申请

US20100230675A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100230675A1
公开(公告)日：2010-09-16
申请号：US12702975
申请日：2010-02-09
申请人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
发明人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
IPC分类号： H01L33/16 , H01L33/02
CPC分类号： G06F3/0412 , G02F1/1362 , G02F2001/13312 , G06F3/042 , H01L27/3227 , H01L27/323 , H01L27/3269
摘要： A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.
摘要翻译：提供了具有优异的光电转换效率的光传感器的显示装置。在其基板上形成光电传感器的显示装置中，光电传感器通过依次层叠栅电极，栅极绝缘膜和半导体层，从基板侧按顺序或相反的顺序形成，电极连接到半导体层的两侧分别由由结晶半导体层和非晶半导体层组成的层叠体形成，并且在栅极绝缘膜侧配置结晶半导体层。

12. 发明申请

US20100109014A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100109014A1
公开(公告)日：2010-05-06
申请号：US12611951
申请日：2009-11-04
申请人： Takahiro KAMO , Takeshi Noda
发明人： Takahiro KAMO , Takeshi Noda
IPC分类号： H01L33/00 , H01L29/786 , H01L21/336
CPC分类号： H01L27/1214 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78678 , H01L29/78696
摘要： A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer.
摘要翻译：显示装置包括：形成栅电极的导电层; 形成在导电层上的第一绝缘层; 半导体层，形成在第一绝缘层上，用于形成在栅电极上方含有多晶硅的半导体膜; 以及形成在所述半导体层上的第二绝缘层。这里，半导体膜包括与平面图中的栅电极重叠的沟道区域。在沟道区域中，与第二绝缘层接触的半导体膜的一部分比与第一绝缘层接触的半导体膜的部分显示更高的杂质浓度。

13. 发明申请

US20090230397A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090230397A1
公开(公告)日：2009-09-17
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： H01L27/12 , H01L21/77
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

14. 发明申请

US20080296583A1 Display Device And Manufacturing Method of The Same 审中-公开
标题翻译：显示器件及其制造方法
公开(公告)号：US20080296583A1
公开(公告)日：2008-12-04
申请号：US12185292
申请日：2008-08-04
申请人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
IPC分类号： H01L33/00
CPC分类号： G02F1/136213 , G02F1/1368 , H01L27/1255 , H01L27/1288
摘要： A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode.
摘要翻译：显示装置包括电容元件，其被配置为使得导电的半导体层的一部分构成一个电极，覆盖半导体层的绝缘膜构成电介质膜，以及导电层，其包括形成在该电极上的部分绝缘膜与一个电极重叠构成另一个电极。导电层具有从形成有半导体层的区域的内部延伸到形成有半导体层的区域的外侧的延伸部，并形成在绝缘膜的上方。绝缘膜在绝缘膜与导电层的半导体层和延伸部分重叠的区域中具有比在与一个电极重叠的部分处的膜厚度大的膜厚度。

15. 发明申请

US20070108448A1 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20070108448A1
公开(公告)日：2007-05-17
申请号：US11590882
申请日：2006-11-01
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上，由a-Si层或细颗粒结晶p-Si层构成的前体膜并且将植入物施加到前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

16. 发明申请

US20050211983A1 Display device and manufacturing method of the same 有权
标题翻译：显示装置及其制造方法相同
公开(公告)号：US20050211983A1
公开(公告)日：2005-09-29
申请号：US11077255
申请日：2005-03-11
申请人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
IPC分类号： G02F1/1343 , G02F1/133 , G02F1/1362 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L21/00 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/786
CPC分类号： G02F1/136213 , G02F1/1368 , H01L27/1255 , H01L27/1288
摘要： The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.
摘要翻译：本发明提供一种能够实现制造过程减少的显示装置的制造方法。在制造方法中，在衬底的上表面上形成半导体层。在半导体层的上表面上形成绝缘膜。使用覆盖第一区域并露出第二区域的掩模，通过绝缘膜在第二区域中进行杂质注入到半导体层中。在去除掩模之后，在第一区域和第二区域中蚀刻绝缘膜的表面至第二区域中的绝缘膜残留的程度，从而将第二区域中的绝缘膜的膜厚度设定为小于第一区域中的绝缘膜的膜厚度。

17. 发明授权

US06767760B2 Process of manufacturing a thin-film transistor 有权
标题翻译：制造薄膜晶体管的工艺
公开(公告)号：US06767760B2
公开(公告)日：2004-07-27
申请号：US10166311
申请日：2002-06-11
申请人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
发明人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
IPC分类号： H01L2100
CPC分类号： H01L29/4908 , H01L29/66757
摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer of 4 nm or more thick at the surface of the polycrystalline silicon layer for forming a thin-film transistor having less variations of characteristics on an unannealed glass substrate.
摘要翻译：通过用激光照射结晶的多晶硅层，在500℃以下的加工温度下进料由臭氧气体和H 2 O或N 2 O气体构成的混合气体，或者多晶硅层预先用溶液作为臭氧水或NH 3 /过氧化氢水溶液，随后用臭氧进行氧化处理，在多晶硅层的表面形成厚度为4nm以上的氧化硅层，以形成具有较小变化的薄膜晶体管未退火玻璃基板上的特性。

18. 发明申请

US20090261329A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20090261329A1
公开(公告)日：2009-10-22
申请号：US12423865
申请日：2009-04-15
申请人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
发明人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/78609 , H01L29/66765 , H01L29/78669 , H01L31/02161
摘要： Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×1010 cm−2 or more to 4.0×1010 cm−2 or less.
摘要翻译：提供一种使用TFT作为开关元件的显示装置，其中通过抑制光泄漏电流小而防止显示装置的图像劣化，特别是其中通过以下方式成为正固定电荷的缺陷的密度定义存在于TFT的保护绝缘膜中的光以抑制光漏电流。在使用TFT的显示装置中，TFT包括绝缘膜，非晶硅膜，漏电极和源电极，以及层叠在覆盖绝缘基板表面的一部分的栅电极上的保护绝缘膜其中保护绝缘膜包括在光照射下变成正固定电荷的缺陷。缺陷的表面密度优选为2.5×10 10 cm -2以上至4.0×10 10 cm -2以下。

19. 发明申请

US20090022619A1 Steel plate for submerged arc welding 审中-公开
标题翻译：埋弧焊钢板
公开(公告)号：US20090022619A1
公开(公告)日：2009-01-22
申请号：US12232196
申请日：2008-09-12
申请人： Masahiko Hamada , Takahiro Kamo , Shuji Okaguchi , Nobuaki Takahashi , Tetsuya Fukuba
发明人： Masahiko Hamada , Takahiro Kamo , Shuji Okaguchi , Nobuaki Takahashi , Tetsuya Fukuba
IPC分类号： C22C38/42 , C22C38/04 , C22C38/60
CPC分类号： C22C38/12 , B23K35/3053 , B23K35/36 , B23K35/362 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/08 , C22C38/14 , C22C38/16
摘要： A steel plate for submerged arc welding having good low temperature toughness at a fusion line vicinity part and a boundary with the base material in HAZ as well as at the base material and the weld metal is provided. The steel plate for submerged arc welding according to the invention contains, by mass, 0.03% to 0.09% C, 1.5% to 2.5% Mn, 0.005% to 0.025% Nb, 0.005% to 0.02% Ti, 0.01% to 0.06% Al, at most 0.0005% B, 0.001% to 0.008% N, at most 0.015% P, at most 0.015% S, and at most 0.006% O, and the balance consists of Fe and impurities. Therefore, the steel plate according to the present invention has good low temperature toughness not only at the fusion line vicinity part and the boundary with a base material in the HAZ but also in the base material and weld metal.
摘要翻译：提供了一种在熔接线附近部分具有良好的低温韧性并且与HAZ中的基材以及基体材料和焊接金属的边界具有良好低温韧性的钢板。根据本发明的埋弧焊用钢板以质量计含有0.03％〜0.09％的C，1.5％〜2.5％的Mn，0.005〜0.025％的Nb，0.005〜0.02％的Ti，0.01〜0.06％的Al ，至多0.0005％B，0.001％至0.008％N，至多0.015％P，至多0.015％S和至多0.006％O，余量由Fe和杂质组成。因此，根据本发明的钢板不仅在熔接线附近部分和与HAZ中的基材的边界以及基材和焊接金属中具有良好的低温韧性。

20. 发明申请

US20080227274A1 MANUFACTURING METHOD OF DISPLAY DEVICE 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20080227274A1
公开(公告)日：2008-09-18
申请号：US12043159
申请日：2008-03-06
申请人： Mikio HONGO , Akio Yazaki , Takahiro Kamo
发明人： Mikio HONGO , Akio Yazaki , Takahiro Kamo
IPC分类号： H01L21/268
CPC分类号： H01L21/268 , H01L21/02675 , H01L27/1285
摘要： In crystallization of a silicon film by annealing using a linear-shaped laser beam having a width of the short axis of the beam is ununiform, the profile (intensity distribution) of the laser beam is evaluated and the results are fed back to a condition of oscillating the laser beam or an optical condition for projecting the laser beam onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is manufactured. The energy distribution of the linear-shaped laser beam is determined by a detector type CCD camera which is moved stepwise in the directions in which its long axis and short axis extend, respectively, and a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signal in the direction parallel to the short axis by the square root of the width W of the short axis of the above linear-shaped laser beam in each position of the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam to evaluate the above intensity distribution.
摘要翻译：在通过使用具有波束的短轴宽度的线形激光束进行退火的硅膜的结晶化不均匀的情况下，评价激光束的轮廓（强度分布），并将结果反馈到振荡激光束或将激光束投射到硅膜上的光学条件，由此制造包括高质量结晶硅膜的显示装置。线状激光束的能量分布由分别在其长轴和短轴延伸的方向上逐步移动的检测器型CCD照相机确定，并且通过将长时间的累积强度E除以获得的值将上述线状激光的短轴的宽度W的平方根在长轴的各位置上沿着与短轴平行的方向累积检测信号而得到的轴方向：E /√{平方根在线形激光束的横截面的所有位置中确定（（W））以评估上述强度分布。

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