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11. 发明申请

US20080203478A1 High Frequency Switch With Low Loss, Low Harmonics, And Improved Linearity Performance 审中-公开
标题翻译：具有低损耗，低谐波和改进的线性性能的高频开关
公开(公告)号：US20080203478A1
公开(公告)日：2008-08-28
申请号：US12035519
申请日：2008-02-22
申请人： Dima Prikhodko , Jerod F. Mason , Gouliang Zhou , Gene A. Tkachenko , Steven C. Sprinkle , Oleksiy Klimashov
发明人： Dima Prikhodko , Jerod F. Mason , Gouliang Zhou , Gene A. Tkachenko , Steven C. Sprinkle , Oleksiy Klimashov
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/423 , H01L23/481 , H01L23/642 , H01L23/66 , H01L24/48 , H01L29/1075 , H01L29/407 , H01L29/66462 , H01L29/7787 , H01L2223/6644 , H01L2224/48091 , H01L2924/00014 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/19041 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A switch element includes a field effect transistor (FET) structure formed on a substrate, the FET structure having a drain, a gate and a source, the drain having a drain capacitance, the gate having a gate capacitance, the source having a source capacitance and an electrical connection to couple the drain capacitance, gate capacitance and the source capacitance to the substrate.
摘要翻译：开关元件包括形成在衬底上的场效应晶体管（FET）结构，所述FET结构具有漏极，栅极和源极，所述漏极具有漏极电容，所述栅极具有栅极电容，所述源极具有源极电容以及将漏极电容，栅极电容和源极电容耦合到衬底的电连接。

12. 发明申请

US20070243849A1 High-frequency switching device with reduced harmonics 有权
标题翻译：具有降低谐波的高频开关器件
公开(公告)号：US20070243849A1
公开(公告)日：2007-10-18
申请号：US11492504
申请日：2006-07-24
申请人： Dima Prikhodko , Sergey Nabokin , Steven C. Sprinkle , Mikhail Shirokov , Gene A. Tkachenko , Jason Chiesa
发明人： Dima Prikhodko , Sergey Nabokin , Steven C. Sprinkle , Mikhail Shirokov , Gene A. Tkachenko , Jason Chiesa
IPC分类号： H04B1/28
CPC分类号： H03K17/165 , H01P1/15 , H03K17/002 , H03K17/102 , H03K17/693
摘要： According to one exemplary embodiment, a low harmonic switching device includes a first switching block including a first multi-gate FET, where the first switching block is coupled to a first input and a shared output of the low harmonic switching device. A first capacitor is coupled between a first gate and a source of the first multi-gate FET and a second capacitor is coupled between a second gate and a drain of the first multi-gate FET so as to cause a reduction in a harmonic amplitude in the shared output. A resistor can couple the source to the drain of the first multi-gate FET. The first switching block can further include a second multi-gate FET, where a source of the second multi-gate FET is coupled to the drain of the first multi-gate FET and a drain of the second multi-gate FET is coupled to the shared output.
摘要翻译：根据一个示例性实施例，低谐波开关器件包括第一开关块，其包括第一多栅极FET，其中第一开关模块耦合到低谐波开关器件的第一输入端和共享输出端。第一电容器耦合在第一多栅极FET的第一栅极和源极之间，并且第二电容器耦合在第一多栅极FET的第二栅极和漏极之间，以便使谐波幅度降低共享输出。电阻器可将源极耦合到第一多栅极FET的漏极。第一开关块还可以包括第二多栅极FET，其中第二多栅极FET的源极耦合到第一多栅极FET的漏极，并且第二多栅极FET的漏极耦合到共享输出。

13. 发明授权

US08509682B2 Compact switch with enhanced linearity performance 有权
标题翻译：紧凑型开关具有增强的线性性能
公开(公告)号：US08509682B2
公开(公告)日：2013-08-13
申请号：US13437782
申请日：2012-04-02
申请人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
发明人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
IPC分类号： H04B7/185
CPC分类号： H04B1/48 , H01P1/15 , H03K17/6871 , H03K17/693
摘要： A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要翻译：开关元件包括具有漏极，源极和多个栅极以及位于所述多个栅极之间的至少一个附加互连的开关器件，所述附加互连可操作以在所述至少两个栅极之间建立恒定电位。

14. 发明申请

US20080166981A1 Compact Low Loss High Frequency Switch With Improved Linearity Performance 有权
标题翻译：紧凑型低损耗高频开关，提高线性性能
公开(公告)号：US20080166981A1
公开(公告)日：2008-07-10
申请号：US11935690
申请日：2007-11-06
申请人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
发明人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
IPC分类号： H04B1/48 , H03K17/687 , H01L21/338
CPC分类号： H04B1/48 , H01P1/15 , H03K17/6871 , H03K17/693
摘要： A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要翻译：开关元件包括具有漏极，源极和多个栅极以及位于所述多个栅极之间的至少一个附加互连的开关器件，所述附加互连可操作以在所述至少两个栅极之间建立恒定电位。

15. 发明授权

US09948348B2 High isolation switch with notch filter 有权
公开(公告)号：US09948348B2
公开(公告)日：2018-04-17
申请号：US12787901
申请日：2010-05-26
申请人： George Nohra , Steven C. Sprinkle
发明人： George Nohra , Steven C. Sprinkle
IPC分类号： H04B1/44 , H04B1/48
CPC分类号： H04B1/48
摘要： A switching method and apparatus that provides high isolation between circuit arms of a mobile communication device by attenuating noise over a defined frequency range using a switched shunt LC notch filter.

16. 发明申请

US20110294443A1 HIGH ISOLATION SWITCH WITH NOTCH FILTER 有权
标题翻译：高隔离开关，带隔音滤波器
公开(公告)号：US20110294443A1
公开(公告)日：2011-12-01
申请号：US12787901
申请日：2010-05-26
申请人： George Nohra , Steven C. Sprinkle
发明人： George Nohra , Steven C. Sprinkle
IPC分类号： H04B1/44
CPC分类号： H04B1/48
摘要： A switching method and apparatus that provides high isolation between circuit arms of a mobile communication device by attenuating noise over a defined frequency range using a switched shunt LC notch filter.
摘要翻译：一种切换方法和装置，其通过使用切换的并联LC陷波滤波器在限定的频率范围上衰减噪声来提供移动通信设备的电路臂之间的高隔离度。

17. 发明授权

US07877058B2 Compact low loss high frequency switch with improved linearity performance 有权
标题翻译：紧凑型低损耗高频开关，具有提高的线性性能
公开(公告)号：US07877058B2
公开(公告)日：2011-01-25
申请号：US11935690
申请日：2007-11-06
申请人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
发明人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
IPC分类号： H04B7/185
CPC分类号： H04B1/48 , H01P1/15 , H03K17/6871 , H03K17/693
摘要： A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要翻译：开关元件包括具有漏极，源极和多个栅极以及位于所述多个栅极之间的至少一个附加互连的开关器件，所述附加互连可操作以在所述至少两个栅极之间建立恒定电位。

18. 发明授权

US07817966B2 Switching device with reduced intermodulation distortion 有权
标题翻译：开关器件具有减少的互调失真
公开(公告)号：US07817966B2
公开(公告)日：2010-10-19
申请号：US11827847
申请日：2007-07-13
申请人： Dima Prikhodko , Sergey Nabokin , Oleksey Klimashov , Steven C. Sprinkle , Gene A. Tkachenko , Richard A. Carter
发明人： Dima Prikhodko , Sergey Nabokin , Oleksey Klimashov , Steven C. Sprinkle , Gene A. Tkachenko , Richard A. Carter
IPC分类号： H04B1/44
CPC分类号： H01P1/15
摘要： According to one exemplary embodiment, a switching device with phase selection terminals to select between at least two phase shifting modes to reduce intermodulation distortion in the switching device includes a first phase selection terminal to select a first phase shifting mode of the switching device by enabling a first phase shifter in a first phase shifting switching branch coupled to an input of the switching device. The switching device further includes a second phase selection terminal to select a second phase shifting mode of the switching device by enabling a second phase shifting switching branch coupled to the switching device input. The intermodulation distortion in the switching device is reduced by selecting one of the first and second phase shifting modes. The switching device may further include a number of FETs coupled in series between an output of the switching device and the first and second phase shifting switching branches.
摘要翻译：根据一个示例性实施例，具有相位选择端子的开关装置在至少两个相移模式之间进行选择以减少开关装置中的互调失真包括：第一相位选择端子，用于通过使能开关装置来选择开关装置的第一相移模式耦合到开关装置的输入端的第一移相开关支路中的第一移相器。开关装置还包括第二相选择端子，用于通过使能耦合到开关装置输入端的第二移相开关支路来选择开关装置的第二相移模式。通过选择第一和第二相移模式之一来减小开关装置中的互调失真。开关器件还可以包括串联耦合在开关器件的输出端与第一和第二相移开关支路之间的多个FET。

19. 发明授权

US07646260B2 Switching device with selectable phase shifting modes for reduced intermodulation distortion 有权
标题翻译：具有可选择的相移模式的开关装置，用于减少互调失真
公开(公告)号：US07646260B2
公开(公告)日：2010-01-12
申请号：US11827780
申请日：2007-07-13
申请人： Dima Prikhodko , Sergey Nabokin , Oleksey Klimashov , Steven C. Sprinkle , Gene A. Tkachenko , Richard A. Carter
发明人： Dima Prikhodko , Sergey Nabokin , Oleksey Klimashov , Steven C. Sprinkle , Gene A. Tkachenko , Richard A. Carter
IPC分类号： H01P1/15 , H01P1/18
CPC分类号： H01P1/15 , H04B1/109
摘要： According to one exemplary embodiment, a switching device with phase selection terminals to select between at least two phase shifting modes to reduce intermodulation distortion in the switching device includes a first phase selection terminal to select a first phase shifting mode of the switching device by enabling a first transmission line in a first phase shifting switching branch coupled to an input of the switching device. The switching device further includes a second phase selection terminal to select a second phase shifting mode of the switching device by enabling a second phase shifting switching branch coupled to the switching device input. The intermodulation distortion in the switching device is reduced by selecting one of the first and second phase shifting modes. The first transmission line is enabled by enabling a FET coupled in series with the first transmission line in the first phase shifting switching branch.
摘要翻译：根据一个示例性实施例，具有相位选择端子的开关装置在至少两个相移模式之间进行选择以减少开关装置中的互调失真包括：第一相位选择端子，用于通过使能开关装置来选择开关装置的第一相移模式耦合到开关装置的输入端的第一移相开关支路中的第一传输线。开关装置还包括第二相选择端子，用于通过使能耦合到开关装置输入端的第二移相开关支路来选择开关装置的第二相移模式。通过选择第一和第二相移模式之一来减小开关装置中的互调失真。通过在第一相移开关分支中使与第一传输线串联耦合的FET来实现第一传输线。

20. 发明申请

US20080079514A1 Harmonic phase tuning filter for RF switches 有权
标题翻译： RF开关谐波相位调谐滤波器
公开(公告)号：US20080079514A1
公开(公告)日：2008-04-03
申请号：US11827618
申请日：2007-07-12
申请人： Dima Prikhodko , Gene A. Tkachenko , Richard A. Carter , Sergey Nabokin , Jason Chiesa , Steven C. Sprinkle , Yu Zhu , Beverly A. Peluso
发明人： Dima Prikhodko , Gene A. Tkachenko , Richard A. Carter , Sergey Nabokin , Jason Chiesa , Steven C. Sprinkle , Yu Zhu , Beverly A. Peluso
IPC分类号： H03H7/01 , H03H7/38
CPC分类号： H03H7/0115 , H03H7/1758 , H03H7/1766 , H03H7/38 , H03H7/465
摘要： According to one exemplary embodiment, a switching module includes a first harmonic phase tuning filter coupled to a first input of an RF switch. The first harmonic phase tuning filter is configured to provide an output impedance that substantially matches an input impedance of the RF switch at approximately a fundamental frequency and to provide a low impedance at approximately a harmonic frequency generated by the RF switch. The first harmonic phase tuning filter includes an LC circuit coupled between an output terminal of the first harmonic phase tuning filter and a ground and tuned to provide the low impedance at approximately the harmonic frequency generated by the RF switch. The RF switching module further includes a second harmonic phase tuning filter coupled to a second input of the RF switch. The first and second harmonic phase tuning filters can be fabricated on a single semiconductor die.
摘要翻译：根据一个示例性实施例，开关模块包括耦合到RF开关的第一输入的第一谐波相位调谐滤波器。第一谐波相位调谐滤波器被配置为提供基本上匹配RF开关的输入阻抗在大致基频处的输出阻抗，并且在由RF开关产生的近似谐波频率处提供低阻抗。第一谐波相位调谐滤波器包括耦合在第一谐波相位调谐滤波器的输出端和接地之间的LC电路，并被调谐以提供大致由RF开关产生的谐波频率的低阻抗。 RF切换模块还包括耦合到RF开关的第二输入端的二次谐波相位调谐滤波器。第一和第二谐波相位调谐滤波器可以在单个半导体管芯上制造。

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