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11. 发明授权

US08245393B2 Method for fabricating a circuit board including aligned nanostructures 有权
标题翻译：用于制造包括排列的纳米结构的电路板的方法
公开(公告)号：US08245393B2
公开(公告)日：2012-08-21
申请号：US12234529
申请日：2008-09-19
申请人： Seung Hun Hong , Sung Myung , Ju Wan Kang
发明人： Seung Hun Hong , Sung Myung , Ju Wan Kang
IPC分类号： H01K3/00
CPC分类号： H05K1/032 , B82Y10/00 , H05K1/0393 , H05K1/167 , H05K3/207 , H05K2201/0162 , H05K2201/026 , H05K2201/0323 , H05K2203/0522 , H05K2203/105 , H05K2203/1173 , H05K2203/1453 , Y10T29/49117 , Y10T29/49121 , Y10T29/4913 , Y10T29/49155 , Y10T29/49162 , Y10T29/49165
摘要： A method for fabricating a circuit board includes providing a first substrate, forming a circuit on the first substrate, the circuit having a first electrode, a second electrode and at least one nanostructure, and transferring the circuit from the first substrate to a surface of a second substrate made of a polymer.
摘要翻译：一种制造电路板的方法，包括提供第一衬底，在第一衬底上形成电路，该电路具有第一电极，第二电极和至少一个纳米结构，并将电路从第一衬底转移到由聚合物制成的第二基材。

12. 发明申请

US20120135136A1 CIRCUIT BOARD INCLUDING ALIGNED NANOSTRUCTURES 有权
标题翻译：电路板包括对准的纳米结构
公开(公告)号：US20120135136A1
公开(公告)日：2012-05-31
申请号：US13365115
申请日：2012-02-02
申请人： Seung Hun Hong , Min Baek Lee
发明人： Seung Hun Hong , Min Baek Lee
IPC分类号： H05K3/10
CPC分类号： H05K1/167 , B82Y10/00 , H01L2924/0002 , H05K3/12 , H05K2201/026 , H05K2203/1173 , Y10S977/734 , Y10S977/883 , Y10S977/902 , Y10S977/932 , H01L2924/00
摘要： Method of fabricating a circuit board are generally disclosed. The method of fabricating a circuit board may include, for example, providing a substrate, forming one or more channels having linear nanostructures on the substrate, and forming a first electrode and a second electrode on the substrate, where the one or more channels facilitate to electrically couple the first electrode to the second electrode
摘要翻译：通常公开了制造电路板的方法。制造电路板的方法可以包括例如提供衬底，在衬底上形成具有线性纳米结构的一个或多个通道，以及在衬底上形成第一电极和第二电极，其中一个或多个通道有助于将第一电极电耦合到第二电极

13. 发明申请

US20120132459A1 CIRCUIT BOARD INCLUDING ALIGNED NANOSTRUCTURES 审中-公开
标题翻译：电路板包括对准的纳米结构
公开(公告)号：US20120132459A1
公开(公告)日：2012-05-31
申请号：US13366184
申请日：2012-02-03
申请人： Seung Hun Hong , Sung Myung , Ju Wan Kang
发明人： Seung Hun Hong , Sung Myung , Ju Wan Kang
IPC分类号： H05K1/03
CPC分类号： H05K1/032 , B82Y10/00 , H05K1/0393 , H05K1/167 , H05K3/207 , H05K2201/0162 , H05K2201/026 , H05K2201/0323 , H05K2203/0522 , H05K2203/105 , H05K2203/1173 , H05K2203/1453 , Y10T29/49117 , Y10T29/49121 , Y10T29/4913 , Y10T29/49155 , Y10T29/49162 , Y10T29/49165
摘要： Circuit boards having a polymer substrate, a first electrode and a second electrode disposed on a surface of the polymer substrate, and at least one nanostructure electrically connected to the first and second electrodes are generally disclosed.
摘要翻译：通常公开了具有聚合物基板，设置在聚合物基板的表面上的第一电极和第二电极以及与第一和第二电极电连接的至少一个纳米结构的电路板。

14. 发明申请

US20110068756A1 BAND-GAP REFERENCE VOLTAGE GENERATION CIRCUIT 审中-公开
标题翻译：带隙参考电压发生电路
公开(公告)号：US20110068756A1
公开(公告)日：2011-03-24
申请号：US12635584
申请日：2009-12-10
申请人： Seung-Hun Hong
发明人： Seung-Hun Hong
IPC分类号： G05F1/10
CPC分类号： G11C5/147 , G05F3/30
摘要： A band-gap reference voltage generation circuit and methods thereof. A band-gap reference voltage generation circuit may include a current generator configured to generate a first current and/or a second current. A band-gap reference voltage generation circuit may include a current controller including a first resistor, through which a first current may flow, a first bipolar transistor connected with a first resistor at an emitter of a first bipolar transistor and/or connected with a node at a base of a first bipolar transistor, and/or a second bipolar transistor connected with a node at a base of a second bipolar transistor. A band-gap reference voltage generation circuit may include a current controller to generate a proportional to absolute temperature current, a feedback unit to control first and second currents to be substantially equal, and a band-gap voltage output unit to generate a reference voltage in response to a PTAT current.
摘要翻译：一种带隙基准电压产生电路及其方法。带隙基准电压产生电路可以包括被配置为产生第一电流和/或第二电流的电流发生器。带隙基准电压产生电路可以包括电流控制器，该电流控制器包括第一电流可以流过的第一电阻器，与第一双极晶体管的发射极处的第一电阻器连接的第一双极晶体管和/ 在第一双极晶体管的基极处，和/或与第二双极晶体管的基极处的节点连接的第二双极晶体管。带隙基准电压产生电路可以包括电流控制器以产生与绝对温度电流成比例的电流控制器，用于控制第一和第二电流基本相等的反馈单元和带隙电压输出单元，以产生参考电压响应PTAT电流。

15. 发明申请

US20110059544A1 OLFACTORY RECEPTOR-FUNCTIONALIZED TRANSISTORS FOR HIGHLY SELECTIVE BIOELECTRONIC NOSE AND BIOSENSOR USING THE SAME 有权
标题翻译：用于高选择性生物电子密度和生物传感器的OLFACTORY受体功能化晶体管
公开(公告)号：US20110059544A1
公开(公告)日：2011-03-10
申请号：US12991609
申请日：2009-05-07
申请人： Seung-Hun Hong , Tai Hyun Park , Tae-Hyun Kim , Sang Hun Lee
发明人： Seung-Hun Hong , Tai Hyun Park , Tae-Hyun Kim , Sang Hun Lee
IPC分类号： G01N27/00 , G01N30/00 , H01L29/772 , H01L21/335
CPC分类号： G01N33/5438 , G01N27/4145 , G01N33/5432 , G01N2333/726
摘要： In accordance with an aspect of the present invention, there is provided a transistor including: a substrate; a source electrode and a drain electrode formed being spaced apart from each other on the substrate; a nanostructure electrically contacted with and formed between the source electrode and the drain electrode; and a lipid membrane having an olfactory receptor protein which is formed to cover surfaces of the source electrode, the drain electrode, and the nanostructure. The olfactory receptor-functionalized transistor in accordance with an aspect of the present invention is useful for a bioelectronic nose which can detect odorants highly specifically with femtomolar sensitivity, and may be applied in various fields requiring the rapid detection of specific odorants, for example, anti-bioterrorism, disease diagnostics, and food safety.
摘要翻译：根据本发明的一个方面，提供一种晶体管，包括：基板; 源电极和漏极形成在基板上彼此间隔开; 与源电极和漏电极电接触并形成的纳米结构; 以及具有嗅觉受体蛋白质的脂质膜，其被形成为覆盖源电极，漏电极和纳米结构的表面。根据本发明的一个方面的嗅觉受体功能化的晶体管可用于能够高度特异性地检测气泡敏感性的气味剂的生物电子鼻，并且可以应用于需要快速检测特定气味剂的各种领域，例如抗 - 恐怖主义，疾病诊断和食品安全。

16. 发明申请

US20090155816A1 BIOSENSOR HAVING NANO WIRE FOR DETECTING FOOD ADDITIVE MONO SODIUM GLUTAMATE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：具有纳米线的生物传感器用于检测食品添加剂单羟基谷氨酸钠及其制造方法
公开(公告)号：US20090155816A1
公开(公告)日：2009-06-18
申请号：US12296070
申请日：2007-04-04
申请人： Seung-Hun Hong , Byung-Yang Lee , Dong-Joon Lee
发明人： Seung-Hun Hong , Byung-Yang Lee , Dong-Joon Lee
IPC分类号： G01N33/573 , C12N11/14 , C12Q1/00
CPC分类号： G01N33/5438 , C12Q1/005 , G01N27/3278 , G01N33/02 , G01N33/9406
摘要： There is provided a biosensor capable of increasing a detecting sensitivity of a target substance of glutamate, by using a nano wire having excellent electrical characteristics and by immobilizing a receptor of glutamate to be detected on a substrate which is disposed between a nano wire and another nano wire and a method for manufacturing the same. The biosensor for detecting glutamate according to the present invention can be manufactured with an arrangement in which the nano wire is selectively arranged on a solid substrate in a matrix. Since this biosensor can prevent the degradation of the nano wire in the electrical characteristic, it can sensitively detect glutamate even through a small amount thereof is contained in a food so that it can be effectively used in detecting the food additive existing in the processed foodstuffs.
摘要翻译：本发明提供一种生物传感器，其能够通过使用具有优异的电气特性的纳米线和通过将待检测的谷氨酸受体固定在配置在纳米线与其他纳米线之间的基板上来提高谷氨酸的目标物质的检测灵敏度线及其制造方法。根据本发明的用于检测谷氨酸的生物传感器可以通过将纳米线选择性地布置在基质中的固体基质上的布置来制造。由于该生物传感器能够防止纳米线在电气特性中的劣化，因此即使食品中含有少量的氨基酸也能够灵敏地检测谷氨酸，因此能够有效地用于检测加工食品中存在的食品添加剂。

17. 发明申请

US20080093550A1 Method For Adhering Nanostructures to End of Probe of Microscope and Microscope Having Probe Made By the Same Method 审中-公开
标题翻译：将纳米结构粘附到具有相同方法制成的探针的显微镜和显微镜的探针末端的方法
公开(公告)号：US20080093550A1
公开(公告)日：2008-04-24
申请号：US11667551
申请日：2005-11-11
申请人： Seung-Hun Hong , Dai-Sik Kim , Sung Myung , Na-Rae Cho , Jin-Eun Kim
发明人： Seung-Hun Hong , Dai-Sik Kim , Sung Myung , Na-Rae Cho , Jin-Eun Kim
IPC分类号： G21K5/04 , B05D1/32
CPC分类号： G01Q70/18
摘要： There is provided a method for selectively adsorbing nano-structures on the end of the probe of a scanning probe microscope. The method includes the steps of: forming the adsorbing prevention coating layer on the probe surface of the scanning probe microscope; removing the adsorbing prevention coating layer formed on the end of the probe; and adsorbing nano-structures on the end of the probe at which the adsorbing prevention coating layer is removed, in the solution or the gas containing nano-structures.
摘要翻译：提供了在扫描探针显微镜的探针末端选择性吸附纳米结构的方法。该方法包括以下步骤：在扫描探针显微镜的探针表面上形成防吸附涂层; 去除形成在探针末端的吸附防止涂层; 并且在溶液或含有纳米结构的气体中，在除去吸附防止涂层的探针的末端上吸附纳米结构。

18. 发明授权

US08823077B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08823077B2
公开(公告)日：2014-09-02
申请号：US12929517
申请日：2011-01-31
申请人： Eun-Hong Lee , Seung-Hun Hong , Un-jeong Kim , Hyung-Woo Lee , Sung Myung
发明人： Eun-Hong Lee , Seung-Hun Hong , Un-jeong Kim , Hyung-Woo Lee , Sung Myung
IPC分类号： H01L29/788 , H01L51/10 , B82Y10/00 , H01L51/00 , H01L51/05
CPC分类号： H01L51/102 , B82Y10/00 , H01L51/0048 , H01L51/0541 , H01L51/105
摘要： A semiconductor device according to example embodiments may include a channel including a nanowire and a charge storage layer including nanoparticles. A twin gate structure including a first gate and a second gate may be formed on the charge storage layer. The semiconductor device may be a memory device or a diode.
摘要翻译：根据示例性实施例的半导体器件可以包括包括纳米线和包含纳米颗粒的电荷存储层的沟道。可以在电荷存储层上形成包括第一栅极和第二栅极的双栅极结构。半导体器件可以是存储器件或二极管。

19. 发明申请

US20110147714A1 FIELD-EFFECT TRANSISTOR AND SENSOR BASED ON THE SAME 有权
标题翻译：场效应晶体管和传感器基于此
公开(公告)号：US20110147714A1
公开(公告)日：2011-06-23
申请号：US12814824
申请日：2010-06-14
申请人： Seung Hun HONG , Byeong Ju KIM , Moon Sook LEE
发明人： Seung Hun HONG , Byeong Ju KIM , Moon Sook LEE
IPC分类号： H01L29/775 , H01L29/78
CPC分类号： H01L29/0665 , B82Y10/00 , G01N27/4145 , H01L29/78654 , H01L29/78681 , H01L29/7869 , H01L29/78696
摘要： A field-effect transistor has at least one electrode disposed independently of source and drain electrodes and in direct contact with the surface of a semiconductor channel to form a schottky barrier, so that it is possible to easily control the schottky barrier.
摘要翻译：场效应晶体管具有独立于源电极和漏电极设置的至少一个电极，并且与半导体沟道的表面直接接触以形成肖特基势垒，使得可以容易地控制肖特基势垒。

20. 发明申请

US20100164593A1 FAST DIFFERENTIAL LEVEL SHIFTER AND BOOT STRAP DRIVER INCLUDING THE SAME 有权
标题翻译：快速差分水平变换器和引导带驱动器，包括它们
公开(公告)号：US20100164593A1
公开(公告)日：2010-07-01
申请号：US12646616
申请日：2009-12-23
申请人： Chang-Woo Ha , Seung-Hun Hong
发明人： Chang-Woo Ha , Seung-Hun Hong
IPC分类号： H03L5/00
CPC分类号： H03K19/018528
摘要： A boot strap driver including a fast differential level shifter are disclosed. The fast differential level shifter may include a first differential amplifier differentially amplifying a pulse width modulation signal and an inverted pulse width modulation signal and outputting a first differential amplification voltage and a second differential amplification voltage based on the amplified result. The fast differential level shifter may also include a second differential amplifier differentially amplifying the first differential amplification voltage and the second differential amplification voltage, and shifting the differential amplification voltages to voltages having an output range between a first voltage and a second voltage based on the amplified result.
摘要翻译：公开了一种包括快速差分电平转换器的引导带驱动器。快速差分电平移位器可以包括差分放大脉宽调制信号和反相脉宽调制信号的第一差分放大器，并且基于放大结果输出第一差分放大电压和第二差分放大电压。快速差分电平移位器还可以包括差分放大第一差分放大电压和第二差分放大电压的第二差分放大器，并且基于放大的差分放大电压将差分放大电压移位到具有第一电压和第二电压之间的输出范围的电压结果。

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