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11. 发明申请

US20100119675A1 DOUGHNUT MAKING METHOD USING SOYBEAN POWDER 审中-公开
标题翻译：使用大豆粉末的造粒方法
公开(公告)号：US20100119675A1
公开(公告)日：2010-05-13
申请号：US12610304
申请日：2009-10-31
申请人： Myeon CHOE , Ha Jin HWANG , Sung Yeon JO , Jae Cheon IM , Sang Hee KIM , Tae Woo KIM
发明人： Myeon CHOE , Ha Jin HWANG , Sung Yeon JO , Jae Cheon IM , Sang Hee KIM , Tae Woo KIM
IPC分类号： A21D13/08 , A23L1/29 , A23L1/01 , A23L1/20 , A21D2/00
CPC分类号： A23L11/07 , A21D2/362 , A21D13/60
摘要： A doughnut making method comprises: pulverizing beans to bean powder using an airflow crushing technique; mixing flour, baking powder and whole milk powder to the bean powder to form a first mixture; mixing the first mixture to a second mixture to form a third mixture, wherein the second mixture is formed of refined sugar, salt and margarine; sieving the third mixture to form a premix; admixing water and egg mix to the premix and pasting the admixture to a dough; and frying the dough in oil to form doughnuts.
摘要翻译：一种甜甜圈制造方法，其特征在于，使用气流破碎技术将豆类粉碎成豆粉; 将粉末，烘烤粉末和全脂奶粉混合到豆粉中以形成第一混合物; 将第一混合物混合至第二混合物以形成第三混合物，其中第二混合物由精制糖，盐和人造黄油形成; 筛分第三混合物形成预混物; 将水和蛋混合物混合到预混物中并将外加剂粘贴到面团上; 并在油中煎炸面团，形成甜甜圈。

12. 发明申请

US20100093292A1 Tx MODULE FOR WIRELESS COMMUNICATION 失效
标题翻译：用于无线通信的Tx模块
公开(公告)号：US20100093292A1
公开(公告)日：2010-04-15
申请号：US12427972
申请日：2009-04-22
申请人： Ki Joong KIM , Shinichi IIZUKA , Hyo Keun BAE , Sang Hee KIM , Joong Jin NAM , Youn Suk KIM
发明人： Ki Joong KIM , Shinichi IIZUKA , Hyo Keun BAE , Sang Hee KIM , Joong Jin NAM , Youn Suk KIM
IPC分类号： H04B1/00
CPC分类号： H04B1/006
摘要： A Tx module for wireless communications includes a plurality of Tx signal input ports receiving Tx signals of different frequencies, respectively, a plurality of power amplification units having input ports connected to the plurality of Tx signal input ports, respectively, a plurality of matching circuit units configured as transformers having input ports connected to output ports of the plurality of power amplification units, respectively, a plurality of harmonic filter units having input ports connected to output ports of the plurality of matching circuit units, respectively, a switch unit having input ports connected to output ports of the plurality of harmonic filter units, respectively and selecting one of signals input through the input ports as output, a gain/switching control unit controlling gains of the power amplification units and controlling the output selection of the switch unit, and a Tx signal output port connected to an output port of the switch unit.
摘要翻译：用于无线通信的Tx模块分别包括多个Tx信号输入端口，分别接收不同频率的Tx信号，多个功率放大单元分别具有连接到多个Tx信号输入端口的输入端口，多个匹配电路单元配置为分别具有连接到所述多个功率放大单元的输出端口的输入端口的变压器，分别具有连接到所述多个匹配电路单元的输出端口的输入端口的多个谐波滤波器单元，具有连接的输入端口的开关单元分别输出多个谐波滤波器单元的端口，并选择通过输入端口输入的信号之一作为输出;增益/切换控制单元，控制功率放大单元的增益并控制开关单元的输出选择;以及 Tx信号输出端口连接到开关单元的输出端口。

13. 发明申请

US20100006969A1 Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods 失效
标题翻译：图像传感器，相同的基板，包括图像传感器的图像感测装置及相关方法
公开(公告)号：US20100006969A1
公开(公告)日：2010-01-14
申请号：US12458014
申请日：2009-06-29
申请人： Byung-Jun Park , Sang-Hee Kim
发明人： Byung-Jun Park , Sang-Hee Kim
IPC分类号： H01L23/52 , H01L21/30 , H01L21/28
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464
摘要： A method of fabricating a CMOS image sensor includes forming a substrate structure that includes a first substrate, a second substrate, and an index matching layer containing nitrogen and an oxide layer between the first and second substrates, and, forming at least one light-sensing device in the second substrate, and after forming the substrate structure, forming a metal interconnection structure on a first surface of the second substrate, the first surface facing away from the first substrate, such that the at least one light sensing device is between the metal interconnection structure and the index matching layer and the oxide layer, the metal interconnection structure being electrically connected to the at least one light-sensing device.
摘要翻译：一种CMOS图像传感器的制造方法，包括在第一和第二基板之间形成包括第一基板，第二基板和包含氮和氧化物层的折射率匹配层的基板结构，并且形成至少一个光感测装置，并且在形成所述基板结构之后，在所述第二基板的第一表面上形成金属互连结构，所述第一表面背离所述第一基板，使得所述至少一个光感测装置在所述金属互连结构和折射率匹配层和氧化物层，金属互连结构电连接到至少一个光感测装置。

14. 发明授权

US07630348B2 Wireless local area networks and methods for establishing direct link protocol (DLP) communications between stations of wireless local area networks 失效
标题翻译：无线局域网和用于在无线局域网的站之间建立直接链路协议（DLP）通信的方法
公开(公告)号：US07630348B2
公开(公告)日：2009-12-08
申请号：US10729493
申请日：2003-12-05
申请人： Sang-hee Kim
发明人： Sang-hee Kim
IPC分类号： H04W4/00
CPC分类号： H04W76/14 , H04W40/20 , H04W84/12 , H04W92/10 , H04W92/18 , Y10S370/908
摘要： Methods of establishing communications between a first station and a second station in a wireless local area network using a direct link protocol are disclosed in which a first distance between the first station and the second station and a second distance between the first station and an access point in the wireless local area network are determined. The first distance may then be compared to the second distance. Direct link protocol communications between the first station and the second station may be established if the first distance is less than the second distance.
摘要翻译：公开了使用直接链路协议在无线局域网中建立第一站与第二站之间的通信的方法，其中第一站与第二站之间的第一距离和第一站与接入点之间的第二距离在无线局域网中确定。然后可以将第一距离与第二距离进行比较。如果第一距离小于第二距离，则可以建立第一站和第二站之间的直接链路协议通信。

15. 发明授权

US07626454B2 Radio frequency signal amplifying device 失效
标题翻译：射频信号放大装置
公开(公告)号：US07626454B2
公开(公告)日：2009-12-01
申请号：US12138659
申请日：2008-06-13
申请人： Ki Joong Kim , Shinichi Iizuka , Youn Suk Kim , Hyo Keun Bae , Sang Hee Kim
发明人： Ki Joong Kim , Shinichi Iizuka , Youn Suk Kim , Hyo Keun Bae , Sang Hee Kim
IPC分类号： H03F3/68
CPC分类号： H03F3/19 , H03F1/0283 , H03F3/211 , H03F3/45188 , H03F3/45237 , H03F2200/06 , H03F2200/534 , H03F2203/45008 , H03F2203/45134 , H03F2203/45336 , H03F2203/45352 , H03F2203/45464 , H03F2203/45638
摘要： There is provided a radio frequency (RF) signal amplifying device consuming less power and operable at a high voltage in a PA driving amplifying apparatus applicable to a PA amplifying circuit which amplifies power of an RF signal. The RF signal amplifying device includes: a balun converting an unbalanced radio frequency signal into a balanced radio frequency signal; a primary amplifier differentially amplifying the balanced radio frequency signal from the balun; and at least one secondary amplifier secondarily and differentially amplifying the balanced radio frequency signal amplified from the primary amplifier.
摘要翻译：提供了在适用于放大RF信号的功率的PA放大电路的PA驱动放大装置中消耗较少功率并在高电压下操作的射频（RF）信号放大装置。 RF信号放大装置包括：平衡 - 不平衡转换器，将不平衡射频信号转换成平衡射频信号; 一个主放大器差分放大来自平衡 - 不平衡转换器的平衡射频信号; 以及至少一个次级放大器，二次并差分放大从主放大器放大的平衡射频信号。

16. 发明授权

US07125608B2 Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same 有权
标题翻译：具有均匀空位缺陷的单晶硅锭和晶片及其制造方法和装置
公开(公告)号：US07125608B2
公开(公告)日：2006-10-24
申请号：US11001888
申请日：2004-12-01
申请人： Young Ho Hong , Ill Soo Choi , Sang Hee Kim , Man Seok Kwak , Hong Woo Lee
发明人： Young Ho Hong , Ill Soo Choi , Sang Hee Kim , Man Seok Kwak , Hong Woo Lee
IPC分类号： B32B9/04 , C30B29/06
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , Y10T428/21
摘要： The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby vacancy defect density and distribution are uniformly controlled. A single-crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20° C./cm in the temperature range of 1000 to 1100° C.
摘要翻译：本发明改进了用于生长单晶硅锭的Czochralski方法，并且提供了具有优异的耐电压特性的具有氧化物层的高品质硅晶片。还提供了一种装置和方法，由此均匀地控制了空缺缺陷密度和分布。在1000〜1100℃的温度范围内，锭的温度变化小于或等于20℃/ cm的条件下，生长单晶硅锭。

17. 发明授权

US06404055B1 Semiconductor device with improved metal interconnection and method for forming the metal interconnection 有权
公开(公告)号：US06404055B1
公开(公告)日：2002-06-11
申请号：US09862521
申请日：2001-05-23
申请人： Jeong-sic Jeon , Jae-woong Kim , Sang-hee Kim
发明人： Jeong-sic Jeon , Jae-woong Kim , Sang-hee Kim
IPC分类号： H01L23525
CPC分类号： H01L23/53295 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a metal interconnection structure, and a method of forming a corresponding semiconductor device having a metal interconnection. The semiconductor device includes an interlevel dielectric (ILD) film deposited over a semiconductor substrate. The semiconductor substrate includes gate electrodes thereon separated from each other by an equal distance, and includes junction areas located between the gate electrodes, and is subjected to polishing. A portion of the ILD film aligned with a gate electrode is etched to a depth to form a trench. An anti-short insulating layer is deposited on the ILD film and in the trench. The anti-short insulating layer and the ILD film are etched to form a via hole so as to expose a junction area. The trench and the via hole are filled with metal, thereby resulting in a completed metal interconnection.

18. 发明申请

US20200235770A1 MOBILE DEVICE MOUNTING APPARATUS 审中-公开
公开(公告)号：US20200235770A1
公开(公告)日：2020-07-23
申请号：US16647431
申请日：2018-03-06
申请人： Young Chan YIM , Sang Hee KIM
发明人： Young Chan YIM , Sang Hee KIM
IPC分类号： H04B1/3888 , A45F5/00 , H04M1/02 , H04M1/04 , H04B1/3877
摘要： A mobile device holder attached to the back surface of a mobile device is provided. More particularly, a mobile device holder is provided, whereby a mobile device can stand at a predetermined angle or be mounted at various positions according to user's surroundings.

19. 发明申请

US20120319737A1 INVERTER AND SWITCHING CIRCUIT 有权
标题翻译：逆变器和开关电路
公开(公告)号：US20120319737A1
公开(公告)日：2012-12-20
申请号：US13494914
申请日：2012-06-12
申请人： Yu Sin Kim , Sang Hee Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
发明人： Yu Sin Kim , Sang Hee Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
IPC分类号： H03K17/687 , H03K5/01
CPC分类号： H03K19/0016 , H04B1/44
摘要： Disclosed herein are an inverter and an antenna circuit. The inverter that receives control signals, inverts the control signals including a first control signal, a second control signal, and a third control signal, and outputs the inverted control signals, includes: a first MOS transistor having a gate to which a first control signal is applied and a source that is grounded; a second MOS transistor having a gate to which a third control signal is applied and a source to which a second control signal is applied; and a third MOS transistor having a gate to which a second control signal is applied and a source to which a third control signal is applied, wherein drains of the first MOS transistor, the second MOS transistor, and the third MOS transistor are connected to an output terminal.
摘要翻译：这里公开了逆变器和天线电路。接收控制信号的逆变器，使包括第一控制信号，第二控制信号和第三控制信号的控制信号反相并输出反相控制信号，包括：第一MOS晶体管，具有栅极，第一控制信号被施加和接地源; 具有施加了第三控制信号的栅极和施加第二控制信号的源极的第二MOS晶体管; 以及第三MOS晶体管，其具有施加第二控制信号的栅极和施加了第三控制信号的源极，其中所述第一MOS晶体管，所述第二MOS晶体管和所述第三MOS晶体管的漏极连接到输出端子。

20. 发明申请

US20120209001A1 PIPERAZINYL-PROPYL-PYRAZOLE DERIVATIVES AS DOPAMINE D4 RECEPTOR ANTAGONISTS, AND PHARMACEUTICAL COMPOSITIONS CONTAINING THE SAME 有权
标题翻译：作为DOPAMINE D4受体拮抗剂的哌嗪衍生物 - 吡咯并吡啶衍生物，以及含有它们的药物组合物
公开(公告)号：US20120209001A1
公开(公告)日：2012-08-16
申请号：US13454817
申请日：2012-04-24
申请人： Jae Yang KONG , Park Woo-Kyu , Heeyeong CHO , Daeyoung JEONG , Gildon CHOI , Hun Yeong KOH , Sang Hee KIM , Ae Nim PAE , Yong Seo CHO , Joo Hwan CHA , Hyunah CHOO , Sang Eun CHAE , Hee-Yoon LEE
发明人： Jae Yang KONG , Park Woo-Kyu , Heeyeong CHO , Daeyoung JEONG , Gildon CHOI , Hun Yeong KOH , Sang Hee KIM , Ae Nim PAE , Yong Seo CHO , Joo Hwan CHA , Hyunah CHOO , Sang Eun CHAE , Hee-Yoon LEE
IPC分类号： C07D403/10 , C07D401/14
CPC分类号： C07D403/06
摘要： The present invention relates to a novel piperazinyl-propyl-pyrazole derivative, a method of its preparation and a pharmaceutically acceptable composition comprising the same. The novel piperazinyl-propyl-pyrazole derivative of the present invention has superior selective affinity for dopamine D4 receptor, can effectively inhibit psychotic behavior (cage climbing) induced by apomorphine, and has relatively low adverse effects in mouse rotarod test. Therefore, it can be developed as a therapeutic agent for the treatment and prevention of central nervous system (CNS) disorders, in particular, schizophrenia, attention deficit hyperactivity disorder, depression, stress diseases, panic disorder, phobia, obsessive-compulsive disorder, posttraumatic stress disorder, cognitive disorder, Alzheimer's disease, Parkinson's disease, anxiety, paraphrenia, mania, seizure disorder, personality disorder, migraine, drug addiction, alcohol addiction, obesity, eating disorder, and sleeping disorder.
摘要翻译：本发明涉及一种新的哌嗪基 - 丙基 - 吡唑衍生物，其制备方法和包含其的药学上可接受的组合物。本发明的新型哌嗪基 - 丙基 - 吡唑衍生物对多巴胺D4受体具有优异的选择性亲和力，可有效抑制阿扑吗啡诱导的精神病性行为（笼养），并在小鼠旋转试验中具有较低的不良反应。因此，它可以被开发为用于治疗和预防中枢神经系统（CNS）障碍，特别是精神分裂症，注意缺陷多动障碍，抑郁症，压力疾病，恐慌症，恐惧症，强迫症，创伤后疼痛的治疗剂压力障碍，认知障碍，阿尔茨海默病，帕金森病，焦虑症，过敏性反应，躁狂症，癫痫发作，人格障碍，偏头痛，药物成瘾，酒精成瘾，肥胖，进食障碍和睡眠障碍。

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