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    • 14. 发明申请
    • ELECTROOPTIC CHROMOPHORES WITH LARGE OPTICAL BIREFRINGENCE FOR APPLICATIONS AT HIGH SPEED AND SHORT WAVELENGTHS
    • 具有高光和短波长应用的大光学双电极的电解色素
    • WO2006055919A3
    • 2007-06-14
    • PCT/US2005042190
    • 2005-11-18
    • OPTIMER PHOTONICS INCMCGINNISS VINCENT DRISSER STEVEN MSPAHR KEVIN
    • MCGINNISS VINCENT DRISSER STEVEN MSPAHR KEVIN
    • G02B5/23
    • C07C255/58C07C205/37C07C255/30C07C255/42C07C323/21
    • Disclosed is a series of materials, which exhibit large birefringence under the influence of an applied electric field. These materials are capable of switching this large birefringence with a characteristic time on the order of 1 microsecond or less. In addition, these materials have good optical loss at this wavelength, and are stable under irradiation. These materials are suitable for fabrication of optical devices such a variable optical attenuators, switches, and modulators that respond in these time frames or slower. These materials are also suitable for use across a wide range of wavelengths. As a second component of this invention, some of these novel materials exhibit these desired optical properties (large birefringence, low loss, stability under illumination) at wavelengths as short as about 400 nm. These materials are suitable for fabrication of optical devices operating at or about 405 nm, where conventional EO materials strongly absorb and/or quickly degrade.
    • 公开了一系列在施加的电场的影响下显示出大的双折射的材料。 这些材料能够以1微秒或更小的特征时间切换这种大的双折射。 此外,这些材料在该波长处具有良好的光学损失,并且在照射下是稳定的。 这些材料适用于制造光学器件,例如在这些时间帧或更慢时间响应的可变光衰减器,开关和调制器。 这些材料也适用于广泛的波长范围。 作为本发明的第二组分,这些新型材料中的一些在短达约400nm的波长下表现出这些所需的光学性质(大的双折射,低损耗,照射下的稳定性)。 这些材料适用于制造在约405nm或约405nm下工作的光学器件,其中常规EO材料强烈吸收和/或快速降解。
    • 15. 发明申请
    • EMBEDDED ELECTRODE INTEGRATED OPTICAL DEVICES AND METHODS OF FABRICATION
    • 嵌入式电极集成光学器件及其制造方法
    • WO2004049048B1
    • 2004-08-26
    • PCT/US0337267
    • 2003-11-21
    • OPTIMER PHOTONICS INCNIPPA DAVID WRISSER STEVEN MRIDGWAY RICHARD WSHORTRIDGE TIM LMCGINNISS VINCENTSPAHR KEVIN
    • NIPPA DAVID WRISSER STEVEN MRIDGWAY RICHARD WSHORTRIDGE TIM LMCGINNISS VINCENTSPAHR KEVIN
    • G02F1/065G02F1/01
    • G02F1/065
    • Waveguide devices and schemes for fabricating waveguide devices useful in applications requiring modulation, attenuation, polarization control, and switching of optical signals are provided. In accordance with one embodiment of the present invention, a method of fabricating an integrated optical device is provided. The method comprises the acts of: (i) providing a support wafer (20) defining an electrode support surface; (ii) forming an electrode pattern (30) over the electrode support surface of the support wafer; (iii) forming a non-polymeric buffer layer (40) on at least a portion of the electrode pattern and over at least a portion of the support wafer; (iv) forming a waveguide core material layer (50) over the non-polymeric silica-based buffer layer; (v) removing portions of the core material layer (50) to define a waveguide core (52); and (vi) positioning a cladding material (60) in optical communication with the waveguide core such that the buffer layer, the cladding material, and the waveguide core define an optically-clad waveguide core.
    • 提供了用于制造用于需要调制,衰减,偏振控制和光信号切换的应用的波导器件的波导器件和方案。 根据本发明的一个实施例,提供了一种制造集成光学器件的方法。 该方法包括以下动作:(i)提供限定电极支撑表面的支撑晶片(20); (ii)在所述支撑晶片的所述电极支撑表面上形成电极图案(30); (iii)在所述电极图案的至少一部分上并在所述支撑晶片的至少一部分上形成非聚合物缓冲层(40); (iv)在非聚合二氧化硅基缓冲层上形成波导芯材料层(50); (v)去除所述芯材料层(50)的部分以限定波导芯(52); 以及(vi)将包层材料(60)定位成与所述波导芯光学连通,使得所述缓冲层,所述包层材料和所述波导芯限定光学包层波导芯。
    • 19. 发明申请
    • ELECTROOPTIC CHROMOPHORES WITH LARGE OPTICAL BIREFRINGENCE FOR APPLICATIONS AT HIGH SPEED AND SHORT WAVELENGTHS
    • 具有高光和短波长应用的大光学双电极的电解色素
    • WO2006055919A2
    • 2006-05-26
    • PCT/US2005/042190
    • 2005-11-18
    • OPTIMER PHOTONICS, INC.MCGINNISS, Vincent, D.RISSER, Steven, M.SPAHR, Kevin
    • MCGINNISS, Vincent, D.RISSER, Steven, M.SPAHR, Kevin
    • C07C17/42
    • C07C255/58C07C205/37C07C255/30C07C255/42C07C323/21
    • Disclosed is a series of materials, which exhibit large birefringence under the influence of an applied electric field. These materials are capable of switching this large birefringence with a characteristic time on the order of 1 microsecond or less. In addition, these materials have good optical loss at this wavelength, and are stable under irradiation. These materials are suitable for fabrication of optical devices such a variable optical attenuators, switches, and modulators that respond in these time frames or slower. These materials are also suitable for use across a wide range of wavelengths. As a second component of this invention, some of these novel materials exhibit these desired optical properties (large birefringence, low loss, stability under illumination) at wavelengths as short as about 400 nm. These materials are suitable for fabrication of optical devices operating at or about 405 nm, where conventional EO materials strongly absorb and/or quickly degrade.
    • 公开了一系列在施加的电场的影响下显示出大的双折射的材料。 这些材料能够以大于1微秒或更小的特征时间来切换这种大的双折射。 此外,这些材料在该波长处具有良好的光学损失,并且在照射下是稳定的。 这些材料适用于制造光学器件,例如在这些时间帧或更慢时间响应的可变光衰减器,开关和调制器。 这些材料也适用于广泛的波长范围。 作为本发明的第二组分,这些新型材料中的一些在短至约400nm的波长下表现出所需的光学性质(大双折射,低损耗,照射下的稳定性)。 这些材料适用于制造在约405nm或约405nm下工作的光学器件,其中常规EO材料强烈吸收和/或快速降解。