专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

BR8500445A 未知
公开(公告)号：BR8500445A
公开(公告)日：1985-09-17
申请号：BR8500445
申请日：1985-01-31
申请人： SOHIO COMMERCIAL DEV CO , BP PHOTOVOLTAICS LTD
发明人： BASOL BULENT M , TSENG ERIC SHENG-FONG , LO DENNIS SHIH-HAO
IPC分类号： C25D7/00 , C25D9/08 , H01L21/368 , H01L31/0296 , H01L31/04 , H01L31/073 , H01L31/18 , C25D5/50 , C25D9/04 , H01L31/06

12. 发明专利

AU3404589A THIN FILM PHOTOVOLTAIC DEVICE 未知
公开(公告)号：AU3404589A
公开(公告)日：1989-08-31
申请号：AU3404589
申请日：1989-05-04
申请人： SOHIO COMMERCIAL DEV CO
发明人： NAME NOT GIVEN
IPC分类号： H01L31/04 , H01L21/28 , H01L21/443 , H01L21/445 , H01L29/40 , H01L29/43 , H01L29/45 , H01L31/02 , H01L23/54 , H01L31/18
摘要： An ohmically conductive contact for a thin film p-type semiconductor compound formed of at least one of the metal elements of Class IIB of the Periodic Table of Elements and at least one of the non-metal elements of Class VIA of the Periodic Table of Elements comprises a first layer of copper (14) contiguous with said p-type semiconductor compound (13) and having a layer thickness of from about 5 Angstroms to about 50 Angstroms and a second layer (15) thereon comprising at least a second conductive metal. The layer (14) forms a stable ohmic contact with film (13) and layers (14) and (15) form a stable current collector.

13. 发明专利

DE3476141D1 METHOD OF FORMING OHMIC CONTACTS 未知
公开(公告)号：DE3476141D1
公开(公告)日：1989-02-16
申请号：DE3476141
申请日：1984-07-24
申请人： SOHIO COMMERCIAL DEV CO , BP PHOTOVOLTAICS LTD
发明人： BASOL BULENT M
IPC分类号： H01L29/40 , H01L21/28 , H01L21/306 , H01L21/443 , H01L21/465 , H01L31/04
摘要： A method of forming ohmic contacts with thin film p-type semiconductor Class II B - VI A compounds comprising etching the film surface with an acidic solution, then etching with a strong basic solution and finally depositing a conductive metal layer.

15. 发明专利

CA1231164A METHOD OF MAKING CURRENT COLLECTOR GRID AND MATERIALS THEREFOR 未知
公开(公告)号：CA1231164A
公开(公告)日：1988-01-05
申请号：CA496495
申请日：1985-11-29
申请人： SOHIO COMMERCIAL DEV CO , BP PHOTOVOLTAICS LTD
发明人： BASOL BULENT M
IPC分类号： H01L31/04 , H01L27/142 , H01L31/0224 , H01L31/073 , H01L31/18 , H01L31/02 , H01L27/14
摘要： METHOD OF MAKING CURRENT COLLECTOR GRID AND MATERIALS THEREFOR A large area photovoltaic device having a transparent front contact is made more efficient by a current collector grid formed over the transparent front contact to decrease the series resistance of the device. Where the front contact is between a transparent substrate and the semiconductor layers of the photovoltaic device, the collector grid is embedded in the semiconductor layers. To prevent leakage of current into the collector grid from one semiconductor layer, the collector grid material is selected to form a Schottky barrier junction with that semiconductor layer that blocks the flow of the leakage current. The process for preparing such thin film photovoltaic devices includes etching channels in the semiconductor layers, depositing the collector grid material in the channels, insulating the grid, and depositing a back electrical contact film. This process has several advantages, particularly when those materials for the collector grid are not compatible with the deposition processes of the semiconductor layers.

16. 发明专利

ES550463A0 未知
公开(公告)号：ES550463A0
公开(公告)日：1987-12-01
申请号：ES550463
申请日：1985-12-27
申请人： SOHIO COMMERCIAL DEV CO , BP PHOTOVOLTAICS LTD
IPC分类号： H01L31/04 , H01L27/142 , H01L31/0224 , H01L31/073 , H01L31/18 , H01L31/02
摘要： A large area photovoltaic device having a transparent front contact is made more efficient by a current collector grid formed over the transparent front contact to decrease the series resistance of the device. Where the front contact is between a transparent substrate (14) and the semiconductor layers of the photovoltaic device, the collector grid (18) is embedded in the semiconductor layers (20, 22). To prevent leakage of current into the collector grid from one semiconductor layer, the collector grid material is selected to form a Schottky barrier junction with that semiconductor layer that blocks the flow of the leakage current. The process for preparing such thin film photovoltaic devices includes etching channels in the semiconductor layers, depositing the collector grid material in the channels, insulating the grid, and depositing a back electrical contact film. This process has several advantages, particularly when those materials for the collector grid are not compatible with the deposition processes of the semiconductor layers.

17. 发明专利

ES8800514A3 METODO DE PREPARACION DE UNA CELDA FOTOVOLTAICA GENERADORA DE CORRIENTE. 未知
公开(公告)号：ES8800514A3
公开(公告)日：1987-10-16
申请号：ES556841
申请日：1986-07-01
申请人： SOHIO COMMERCIAL DEV CO , BP PHOTOVOLTAICS LTD
IPC分类号： H01L31/18
摘要： METODO PARA LA PREPARACION DE UNA CELDA FOTOVOLTAICA GENERADORA DE CORRIENTE ELECTRICA. COMPRENDE LAS OPERACIONES DE SUMERGIR UN SUSTRATO METALICO EN UN BAÑO ELECTROLITICO QUE INCLUYE SULFATO DE CADMIO, EL CUAL SIRVE COMO CATODO; DE PROPORCIONAR UN ANODO EN EL BAÑO QUE TENGA POR LO MENOS UN REVESTIMIENTO EXTERIOR DE TELURIO; DE MANTENER EL BAÑO ELECTROLITICO A UN PH ACIDO; Y DE APLICAR UN VOLTAJE NEGATIVO ENTRE EL CATODO Y EL ELECTRODO DE REFERENCIA STANDARD. EL VOLTAJE CON RELACION AL PH SE SELECCIONA DE TAL FORMA QUE EL TELURURO DE CADMIO DEPOSITADO CONTENGA UNA PROPORCION PREDETERMINADA DE CADMIO A TELURIO, PARA OBTENER UNA CAPA DEL TIPO DE CONDUCTIVIDAD PREDETERMINADA, CONTINUANDOSE LA DEPOSICION HASTA QUE SE DEPOSITE UNA CAPA DE TELURURO DE CADMIO POLICRISTALINA DE ESPESOR PREDETERMINADO. DE APLICACION EN LA FABRICACION DE DISPOSITIVOS FOTOVOLTAICOS DE BARRERA SCHOTTKY.

20. 发明专利

ZA8405431B METHOD OF FORMING OHMIC CONTACTS 未知
公开(公告)号：ZA8405431B
公开(公告)日：1986-10-29
申请号：ZA8405431
申请日：1984-07-13
申请人： SOHIO COMMERCIAL DEV CO , BP PHOTOVOLTAICS LTD
发明人： BASOL BULENT M
IPC分类号： H01L29/40 , H01L21/28 , H01L21/306 , H01L21/443 , H01L21/465 , H01L31/04 , H01C , H01L
CPC分类号： H01L21/443 , H01L21/465 , Y02E10/543 , Y10S438/974

你已经成功收藏专利！

检索式保存成功!

IPRDB