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    • 11. 发明申请
    • METHODS OF BRIDGING LATERAL NANOWIRES AND DEVICE USING SAME
    • 使用相同的方法桥接横向纳米线和器件
    • WO2005062384A2
    • 2005-07-07
    • PCT/US2004/040597
    • 2004-12-03
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.ISLAM, M., SaifulKAMINS, Theodore, I.SHARMA, Shashank
    • ISLAM, M., SaifulKAMINS, Theodore, I.SHARMA, Shashank
    • H01L29/00
    • G11C13/025B82Y10/00B82Y30/00G11C2213/16G11C2213/17H01L21/76838H01L23/53271H01L2221/1094H01L2924/0002Y10S977/721Y10S977/742H01L2924/00
    • A semiconductor nanowire (162, 660) is grown laterally. A method of growing (100) the nanowire forms (120) a vertical surface (118a, 118b, 610, 620) on a substrate (102, 630, 690), and activates (130) the vertical surface with a nanoparticle catalyst (160, 640, 642). A method of laterally bridging (200) the nanowire grows (210) the nanaowire from the activated vertical surface to connect to an opposite vertical surface (118a, 118b, 610, 620) on the substrate. A method of connecting (300) electrodes (610, 620) of a semiconductor device (600) grows (330) the nanowire from an activated (320) device electrode to an opposing device electrode. A method of bridging (400) semiconductor nanowires grows (410, 420, 430) nanowires between an electrode pairs opposing lateral directions. A method of self-assembling (500) the nanowire bridges (530) the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity (170) in the vertical surface. An electronic device (600) includes a laterally grown nano-scale interconnection (660).
    • 横向生长半导体纳米线(162,660)。 在衬底(102,630,690)上生长(100)纳米线形成(120)垂直表面(118a,118b,610,620)的方法,并用纳米颗粒催化剂(160)激活垂直表面(130) ,640,642)。 横向桥接(200)纳米线的方法从激活的垂直表面生长(210)纳米线,以连接到衬底上的相对的垂直表面(118a,118b,610,620)。 连接(300)半导体器件(600)的电极(610,620)的方法从纳米线从激活的(320)器件电极生长(330)到相对的器件电极。 桥接(400)半导体纳米线的方法在相对于横向方向的电极对之间生长(410,420,430)纳米线。 一种在活化电极对之间自组装(500)纳米线桥(530)纳米线的方法。 控制纳米线生长的方法在垂直表面形成表面不规则(170)。 电子设备(600)包括横向生长的纳米级互连(660)。