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11. 发明授权

US07316747B2 Seeded single crystal silicon carbide growth and resulting crystals 有权
标题翻译：种子单晶碳化硅生长并产生晶体
公开(公告)号：US07316747B2
公开(公告)日：2008-01-08
申请号：US11248579
申请日：2005-10-12
申请人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov , George J. Fechko, Jr. , Calvin H. Carter, Jr.
发明人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov , George J. Fechko, Jr. , Calvin H. Carter, Jr.
IPC分类号： C30B25/12
CPC分类号： C30B23/00 , C30B23/025 , C30B29/36 , C30B33/00 , H01L21/324
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译：公开了一种用于在种子生长系统中生产高质量大块碳化硅单晶并且在不存在固体碳化硅源的情况下，通过减少碳化硅晶种和种子保持器之间的分离直到导电传热晶种和种子保持器之间的种子晶种和种子保持器之间的辐射热传递在基本上与种子保持器相邻的整个晶种表面上。

12. 发明申请

US20110266556A1 METHOD FOR CONTROLLED GROWTH OF SILICON CARBIDE AND STRUCTURES PRODUCED BY SAME 有权
标题翻译：用于控制碳化硅的生长和由其生产的结构的方法
公开(公告)号：US20110266556A1
公开(公告)日：2011-11-03
申请号：US12768960
申请日：2010-04-28
申请人： Robert Tyler Leonard , Hudson M. Hobgood , William A. Thore
发明人： Robert Tyler Leonard , Hudson M. Hobgood , William A. Thore
IPC分类号： H01L29/161 , C30B23/00
CPC分类号： H01L29/1608 , C30B23/002 , C30B23/025 , C30B29/36
摘要： A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.
摘要翻译：公开了一种用于碳化硅的控制生长的方法和通过该方法制造的结构。可以通过将牺牲衬底放置在具有源材料的生长区中来生长碳化硅（SiC）的晶体。源材料可以包括低溶解度杂质。然后在牺牲衬底上生长SiC以调节源材料。然后用最终的衬底代替牺牲衬底，并且在最终衬底上生长SiC。制造碳化硅的单晶，其中碳化硅晶体具有基本上很少的微管缺陷。这种晶体还可以包括基本均匀的低溶解度杂质浓度，并且可以用于制造晶片和/或SiC晶粒。

13. 发明申请

US20110024766A1 ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER 有权
标题翻译：一个百万像素单晶硅碳化硅波片
公开(公告)号：US20110024766A1
公开(公告)日：2011-02-03
申请号：US12772254
申请日：2010-05-03
申请人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
发明人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
IPC分类号： H01L29/24
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译：公开了一种用于通过减少碳化硅晶种和种子保持器之间的分离直到在晶种和种子保持器之间的导电传热主导辐射的方式在种子生长系统中生产高质量的碳化硅块状单晶的方法晶种和种子保持器之间的基本上在种子保持器附近的整个晶种表面上的热传递。

14. 发明授权

US07601441B2 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer 有权
标题翻译： 100毫米高纯度半绝缘单晶碳化硅晶圆
公开(公告)号：US07601441B2
公开(公告)日：2009-10-13
申请号：US10876963
申请日：2004-06-25
申请人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valerl F. Tsvetkov
发明人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valerl F. Tsvetkov
IPC分类号： B32B19/00 , H01L31/0312
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm−2, and a combined concentration of shallow level dopants less than 5E16 cm−3.
摘要翻译：公开了单个多型单晶碳化硅晶片，其直径大于3英寸且小于5英寸，电阻率大于10,000欧姆 - 厘米，微管密度小于200厘米-2，并且浅层掺杂剂的组合浓度较小比5E16厘米-3。

15. 发明申请

US20080237609A1 Low Micropipe 100 mm Silicon Carbide Wafer 有权
标题翻译：低微管100毫米碳化硅晶圆
公开(公告)号：US20080237609A1
公开(公告)日：2008-10-02
申请号：US11940423
申请日：2007-11-15
申请人： Adrian Powell , Mark Brady , Robert Tyler Leonard
发明人： Adrian Powell , Mark Brady , Robert Tyler Leonard
IPC分类号： H01L29/24
CPC分类号： H01L29/1608 , C30B23/00 , C30B29/36 , H01L29/04
摘要： A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm−2.
摘要翻译：公开了一种高质量的SiC晶圆，其直径至少为约100mm，微管密度小于约25cm -2。

16. 发明授权

US07319518B2 Double side polished wafer scratch inspection tool 有权
标题翻译：双面抛光晶圆划痕检测工具
公开(公告)号：US07319518B2
公开(公告)日：2008-01-15
申请号：US11211061
申请日：2005-08-24
申请人： Robert Tyler Leonard , Jason Ronald Jenny
发明人： Robert Tyler Leonard , Jason Ronald Jenny
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/47 , G01N2021/8864
摘要： The invention is a method of inspecting a semiconductor wafer surface for scratches. The method includes positioning a semiconductor wafer for illumination by a radiation source and adjacent a background material that will absorb radiation from the radiation source, directing radiation at a surface of the wafer from the radiation source that has a wavelength that will be absorbed by the fundamental absorption of the wafer, filtering or otherwise limiting the radiation to allow only radiation having wavelengths that are absorbed by the fundamental absorption of the wafer to pass, and detecting radiation scattered on the surface of the wafer and filtered, by position, to thereby identify the location of the scratches on the surface of the wafer, while the absorption of the background material prevents other radiation from the source from interfering with the detection of the scratch-scattered radiation.
摘要翻译：本发明是检查半导体晶片表面以划伤的方法。该方法包括将辐射源定位用于照明的半导体晶片，并且邻近将吸收来自辐射源的辐射的背景材料，从晶片的表面引导辐射，该辐射源具有将被基底部分吸收的波长的辐射源吸收晶片，过滤或以其他方式限制辐射，以允许仅具有被晶片的基本吸收所吸收的波长的辐射通过，并且检测散射在晶片表面上并通过位置过滤的辐射，从而识别在晶片表面上划痕的位置，而背景材料的吸收防止来自源的其它辐射干扰了划痕辐射的检测。

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