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11. 发明申请

US20080206891A1 Synthetic antiferromagnetic nanoparticles 审中-公开
标题翻译：合成反铁磁性纳米粒子
公开(公告)号：US20080206891A1
公开(公告)日：2008-08-28
申请号：US11894046
申请日：2007-08-16
申请人： Shan X. Wang , Robert John Wilson , Wei Hu
发明人： Shan X. Wang , Robert John Wilson , Wei Hu
IPC分类号： G01N33/553
CPC分类号： G01N33/5434 , B03C1/01 , B82Y25/00 , H01F1/0054 , H01F10/3272
摘要： The present invention provides a synthetic antiferromagnetic (SAF) nanoparticle. The SAF nanoparticle includes at least two ferromagnetic layers and at least one non-magnetic spacer layer. The spacer layer is situated in between planar surfaces of the ferromagnetic layers. The saturation field of the SAF nanoparticle is tunable by the geometry and composition of the nanoparticle. Preferably, the saturation field can be tuned to be between about 100 Oe and about 10,000 Oe. Also preferably, the SAF nanoparticle has a magnetic moment of at least 800 emu/cm3. In a preferred embodiment, the SAF nanoparticle has at least one of a biomolecule, a recognition moiety, or a molecular coating attached to its surface. The SAF nanoparticle may also have a dye attached to its surface.
摘要翻译：本发明提供一种合成反铁磁（SAF）纳米颗粒。 SAF纳米颗粒包括至少两个铁磁层和至少一个非磁性间隔层。间隔层位于铁磁层的平坦表面之间。 SAF纳米颗粒的饱和场可以通过纳米颗粒的几何形状和组成来调节。优选地，饱和场可以调节在约100Oe和约10,000Oe之间。还优选地，SAF纳米颗粒具有至少800emu / cm 3的磁矩。在优选的实施方案中，SAF纳米颗粒具有附着于其表面的生物分子，识别部分或分子涂层中的至少一种。 SAF纳米颗粒也可以具有附着在其表面上的染料。

12. 发明授权

US06548186B1 High resistivity films for AP layers in spin valves 失效
标题翻译：自旋阀中AP层的高电阻率膜
公开(公告)号：US06548186B1
公开(公告)日：2003-04-15
申请号：US09574301
申请日：2000-05-19
申请人： Matthew Joseph Carey , Bruce Alvin Gurney , Robert John Wilson
发明人： Matthew Joseph Carey , Bruce Alvin Gurney , Robert John Wilson
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B32B15/01 , B82Y10/00 , G11B5/3903 , H01F10/3268 , Y10T428/1171 , Y10T428/12465 , Y10T428/12861 , Y10T428/12937 , Y10T428/12986
摘要： In a spin valve, at least one AP pinned sublayer and/or one AP free sublayer comprise high resistivity alloys of the type AB, wherein A is selected from the group consisting of CoFe, NiFe, and CoFeNi, and B is selected from the group consisting of B, Ta, Nb, Zr, and/or Hf. The resistivity value of the highly resistive layer is typically between about 30 &mgr;&OHgr;-cm and 100 &mgr;&OHgr;-cm. The highly resistive layers reduce the shunting of the sense current away from the rest of the structure, and prevent electrons from being shunted away from the active region of the spin valve and, thus, reducing &Dgr;R/R. The spin valve of this layered structure can increase the overall sheet resistance and optimize the &Dgr;R/R value of the spin valve.
摘要翻译：在自旋阀中，至少一个AP钉扎子层和/或一个AP自由子层包括AB型的高电阻率合金，其中A选自CoFe，NiFe和CoFeNi，B选自由B，Ta，Nb，Zr和/或Hf组成。高电阻层的电阻率值通常在约30μOMEGA-cm和100μOMEGA-cm之间。高电阻层减少了感测电流与结构的其余部分的分流，并且防止电子被分流离开自旋阀的有源区域，从而减少DELTAR / R。这种分层结构的自旋阀可以增加整体薄层电阻并优化自旋阀的DELTAR / R值。

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