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11. 发明申请

US20090189144A1 Device For Absorbing Or Emitting Light And Methods Of Making The Same 有权
标题翻译：吸收或发光的装置及其制作方法
公开(公告)号：US20090189144A1
公开(公告)日：2009-07-30
申请号：US12243804
申请日：2008-10-01
申请人： Nathaniel Quitoriano , Theodore I. Kamins
发明人： Nathaniel Quitoriano , Theodore I. Kamins
IPC分类号： H01L29/06 , H01J40/00 , H01L21/20
CPC分类号： H01L31/101 , H01L21/02573 , H01L21/02603 , H01L21/02617 , H01L21/02645 , H01L27/14647 , Y10S977/932 , Y10S977/95 , Y10S977/953
摘要： A device disclosed herein includes a first layer, a second layer, and a first plurality of nanowires established between the first layer and the second layer. The first plurality of nanowires is formed of a first semiconductor material. The device further includes a third layer, and a second plurality of nanowires established between the second and third layers. The second plurality of nanowires is formed of a second semiconductor material having a bandgap that is the same as or different from a bandgap of the first semiconductor material.
摘要翻译：本文公开的装置包括在第一层和第二层之间建立的第一层，第二层和第一多个纳米线。第一多个纳米线由第一半导体材料形成。该装置还包括第二层和第三层之间建立的第三层和第二组纳米线。第二多个纳米线由具有与第一半导体材料的带隙相同或不同的带隙的第二半导体材料形成。

12. 发明申请

US20080317406A1 Optical interconnect 有权
标题翻译：光互连
公开(公告)号：US20080317406A1
公开(公告)日：2008-12-25
申请号：US11820310
申请日：2007-06-19
申请人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
发明人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
IPC分类号： G02B6/28
CPC分类号： H04B10/803 , G02B6/4206 , G02B6/43
摘要： An optical interconnect has a plurality of optical sources, a first lens configured to collimate optical beams from the plurality of optical sources, a second lens configured to refocus the optical beams, and a plurality of optical receivers configured to receive the refocused optical beams from the second lens.
摘要翻译：光学互连具有多个光源，第一透镜被配置为准直来自多个光源的光束，配置成重新聚焦光束的第二透镜以及被配置为从所述光源接收重新聚焦的光束的多个光学接收器第二个镜头。

13. 发明授权

US08244134B2 Optical interconnect 有权
标题翻译：光互连
公开(公告)号：US08244134B2
公开(公告)日：2012-08-14
申请号：US11820310
申请日：2007-06-19
申请人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
发明人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
IPC分类号： H04J14/02 , H04B10/00
CPC分类号： H04B10/803 , G02B6/4206 , G02B6/43
摘要： An optical interconnect has a plurality of optical sources, a first lens configured to collimate optical beams from the plurality of optical sources, a second lens configured to refocus the optical beams, and a plurality of optical receivers configured to receive the refocused optical beams from the second lens.
摘要翻译：光学互连具有多个光源，第一透镜被配置为准直来自多个光源的光束，配置成重新聚焦光束的第二透镜以及被配置为从所述光源接收重新聚焦的光束的多个光学接收器第二个镜头。

14. 发明授权

US08101473B2 Rounded three-dimensional germanium active channel for transistors and sensors 失效
标题翻译：用于晶体管和传感器的圆形三维锗活性通道
公开(公告)号：US08101473B2
公开(公告)日：2012-01-24
申请号：US12501259
申请日：2009-07-10
申请人： Hans Cho , Theodore I Kamins , Nathaniel Quitoriano
发明人： Hans Cho , Theodore I Kamins , Nathaniel Quitoriano
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/423 , B82Y10/00 , G01N27/414 , H01L21/02532 , H01L21/02636 , H01L21/02667 , H01L29/0665 , H01L29/0673 , H01L29/125 , H01L29/205 , H01L29/66439 , H01L29/775 , H01L29/7854
摘要： A process is provided for fabricating rounded three-dimensional germanium active channels for transistors and sensors. For forming sensors, the process comprises providing a crystalline silicon substrate; depositing an oxide mask on the crystalline silicon substrate; patterning the oxide mask with trenches to expose linear regions of the silicon substrate; epitaxially grow germanium selectively in the trenches, seeded from the silicon wafer; optionally etching the SiO2 mask partially, so that the cross section resembles a trapezoid on a stem; and annealing at an elevated temperature. The annealing process forms the rounded channel. For forming transistors, the process further comprises depositing and patterning a gate oxide and gate electrode onto this structure to form the gate stack of a MOSFET device; and after patterning the gate, implanting dopants into the source and drain located on the parts of the germanium cylinder on either side of the gate line.
摘要翻译：提供了一种用于制造用于晶体管和传感器的圆形三维锗活性通道的工艺。对于形成传感器，该方法包括提供晶体硅衬底; 在所述晶体硅衬底上沉积氧化物掩模; 用沟槽图案化氧化物掩模以暴露硅衬底的线性区域; 在沟槽中选择性地外延生长锗，从硅晶片接种; 可选地部分地蚀刻SiO 2掩模，使得横截面类似于杆上的梯形; 并在高温退火。退火过程形成圆形通道。为了形成晶体管，该工艺还包括将栅极氧化物和栅电极沉积并图案化到该结构上以形成MOSFET器件的栅叠层; 并且在图案化栅极之后，将掺杂剂注入位于栅极线两侧的锗圆筒部分上的源极和漏极。

15. 发明授权

US08030729B2 Device for absorbing or emitting light and methods of making the same 有权
标题翻译：用于吸收或发射光的装置及其制造方法
公开(公告)号：US08030729B2
公开(公告)日：2011-10-04
申请号：US12243804
申请日：2008-10-01
申请人： Nathaniel Quitoriano , Theodore I. Kamins
发明人： Nathaniel Quitoriano , Theodore I. Kamins
IPC分类号： H01L31/06
CPC分类号： H01L31/101 , H01L21/02573 , H01L21/02603 , H01L21/02617 , H01L21/02645 , H01L27/14647 , Y10S977/932 , Y10S977/95 , Y10S977/953
摘要： A device disclosed herein includes a first layer, a second layer, and a first plurality of nanowires established between the first layer and the second layer. The first plurality of nanowires is formed of a first semiconductor material. The device further includes a third layer, and a second plurality of nanowires established between the second and third layers. The second plurality of nanowires is formed of a second semiconductor material having a bandgap that is the same as or different from a bandgap of the first semiconductor material.
摘要翻译：本文公开的装置包括在第一层和第二层之间建立的第一层，第二层和第一多个纳米线。第一多个纳米线由第一半导体材料形成。该装置还包括第二层和第三层之间建立的第三层和第二组纳米线。第二多个纳米线由具有与第一半导体材料的带隙相同或不同的带隙的第二半导体材料形成。

16. 发明申请

US20090108387A1 Semiconductor Device And Method For Strain Controlled Optical Absorption 有权
标题翻译：用于应变控制光吸收的半导体器件和方法
公开(公告)号：US20090108387A1
公开(公告)日：2009-04-30
申请号：US12243155
申请日：2008-10-01
申请人： Nathaniel Quitoriano , Theodore I. Kamins
发明人： Nathaniel Quitoriano , Theodore I. Kamins
IPC分类号： H01L31/0232 , H01L31/0248 , H01L21/02
CPC分类号： H01L31/0248
摘要： A semiconductor device which has controlled optical absorption includes a substrate, and a semiconductor layer supported by the substrate. The semiconductor has variable optical absorption at a predetermined optical frequency in relationship to a bandgap of the semiconductor layer. Also included is a strain application structure coupled to the semiconductor layer to create a strain in the semiconductor layer to change the semiconductor bandgap.
摘要翻译：具有受控光吸收的半导体器件包括衬底和由衬底支撑的半导体层。半导体在与半导体层的带隙有关的预定光频率下具有可变的光吸收。还包括耦合到半导体层的应变施加结构，以在半导体层中产生应变以改变半导体带隙。

17. 发明申请

US20160341896A1 METHODS AND SYSTEMS RELATING TO OPTICAL WAVEGUIDE TAPERS 有权
标题翻译：与光波导片相关的方法和系统
公开(公告)号：US20160341896A1
公开(公告)日：2016-11-24
申请号：US15159273
申请日：2016-05-19
申请人： ALEXANDRE HORTH , NATHANIEL QUITORIANO
发明人： ALEXANDRE HORTH , NATHANIEL QUITORIANO
IPC分类号： G02B6/122 , G02B6/30 , G02B6/126 , G02B27/00
CPC分类号： G02B6/1228 , G02B6/126 , G02B6/305 , G02B27/0012
摘要： Photonic integrated circuits required connection to germanium doped silica cored optical fibers or silica cored and fluorine doped silica cladding optical fibers which have low index contrast and large mode field diameters. However, the optical waveguide within a photonic integrated circuit such as formed using silicon-on-insulator or compound semiconductors tends to be high index contrast and small mode field diameter. Accordingly, it is necessary to implement adiabatic waveguide tapers with a high coupling efficiency and small footprint in order to couple into the photonic integrated circuits to/from the optical fiber. Prior art tapers have been generally high loss and absorb valuable die footprint. In contrast the inventors demonstrate a small low loss waveguide taper designed using a methodology they refer to a “constant loss.”
摘要翻译：光子集成电路需要连接到具有低折射率对比度和大模场直径的锗掺杂二氧化硅芯光纤或二氧化硅芯和氟掺杂的二氧化硅包层光纤。然而，诸如使用绝缘体上硅或复合半导体形成的光子集成电路内的光波导倾向于具有高折射率对比度和小模场直径。因此，需要实现具有高耦合效率和小占地面积的绝热波导锥，以便耦合到/从光纤到光子集成电路。现有技术的锥度通常具有高损耗并且吸收有价值的模具尺寸。相比之下，发明人证明了使用它们指的是“恒定损耗”的方法设计的小的低损耗波导锥度。

18. 发明授权

US09484197B2 Lateral growth semiconductor method and devices 有权
标题翻译：横向生长半导体方法和器件
公开(公告)号：US09484197B2
公开(公告)日：2016-11-01
申请号：US12910055
申请日：2010-10-22
申请人： Nathaniel Quitoriano
发明人： Nathaniel Quitoriano
IPC分类号： H01L29/04 , H01L21/02 , C30B25/02 , C30B29/08 , H01L31/18 , H01L27/15
CPC分类号： H01L21/02422 , C30B25/02 , C30B29/08 , H01L21/02532 , H01L21/02639 , H01L21/02653 , H01L27/153 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of growing high quality crystalline films on lattice-mismatched or amorphous layers is presented allowing semiconductor materials that would normally be subject to high stress and cracking to be employed allowing cost reductions and/or performance improvements in devices to be obtained. Catalysis of the growth of these films is based upon utilizing particular combinations of metals, materials, and structures to establish growth of the crystalline film from a predetermined location. The subsequent film growth occurring in one or two dimensions to cover a predetermined area of the amorphous or lattice-mismatched substrate. Accordingly the technique can be used to either cover a large area or provide tiles of crystalline material with or without crystalline film interconnections.
摘要翻译：提出了在晶格失配或非晶层上生长高质量结晶膜的方法，允许通常采用高应力和开裂的半导体材料，从而可以获得要获得的器件的成本降低和/或性能改进。这些膜的生长的催化基于利用金属，材料和结构的特定组合来建立晶体膜从预定位置的生长。随后的膜生长以一维或二维发生，以覆盖非晶形或晶格失配衬底的预定区域。因此，该技术可以用于覆盖大面积或提供具有或不具有结晶膜互连的结晶材料的瓦片。

19. 发明授权

US08768132B2 Ridge waveguide 有权
标题翻译：脊波导
公开(公告)号：US08768132B2
公开(公告)日：2014-07-01
申请号：US12253196
申请日：2008-10-16
申请人： Duncan Stewart , Marco Florentino , Nathaniel Quitoriano , Charles Santori
发明人： Duncan Stewart , Marco Florentino , Nathaniel Quitoriano , Charles Santori
IPC分类号： G02B6/10
CPC分类号： G02B6/136 , G02B2006/12097
摘要： A ridge waveguide with decreased optical losses from surface scattering includes a ridge waveguide with etched surfaces and an optical layer deposited on the ridge waveguide that substantially covers the etched surfaces. A method of reducing optical energy losses from scattering at etched surfaces of a ridge waveguide includes depositing a layer of optical material over the etched surfaces, the layer of optical material filling surface irregularities in the etched surfaces.
摘要翻译：具有从表面散射减少的光损失的脊波导包括具有蚀刻表面的脊波导和沉积在脊波导上的基本上覆盖蚀刻表面的光学层。降低脊波导蚀刻表面散射光能损失的方法包括在蚀刻表面上沉积光学材料层，该光学材料层填充蚀刻表面中的表面凹凸。

20. 发明授权

US08129710B2 Plasmon enhanced nanowire light emitting diode 有权
标题翻译：等离子体增强纳米线发光二极管
公开(公告)号：US08129710B2
公开(公告)日：2012-03-06
申请号：US12262451
申请日：2008-10-31
申请人： Hans Cho , David Fattal , Nathaniel Quitoriano
发明人： Hans Cho , David Fattal , Nathaniel Quitoriano
IPC分类号： H01L33/00
CPC分类号： H01L33/18
摘要： A nanowire light emitting diode (LED) and method of emitting light employ a plasmonic mode. The nanowire LED includes a nanowire having a semiconductor junction, a shell layer coaxially surrounding the nanowire, and an insulating layer, which is plasmonically thin, isolating the shell layer from the nanowire. The shell layer supports a surface plasmon that couples to the semiconductor junction by an evanescent field. Light is generated in a vicinity of the semiconductor junction and the surface plasmon is coupled to the semiconductor junction during light generation. The coupling enhances one or both of an efficiency of light emission and a light emission rate of the LED. A method of making the nanowire LED includes forming the nanowire, providing the insulating layer on the surface of the nanowire, and forming the shell layer on the insulating layer in the vicinity of the semiconductor junction.
摘要翻译：纳米线发光二极管（LED）和发光的方法采用等离子体激发模式。纳米线LED包括具有半导体结的纳米线，同轴地围绕纳米线的壳层，以及等离子体薄的绝缘层，将壳层与纳米线隔离。壳层支撑通过ev逝场耦合到半导体结的表面等离子体。在半导体结附近产生光，并且在光产生期间，表面等离子体激元耦合到半导体结。耦合增强了LED的发光效率和发光速率的一个或两个。制造纳米线LED的方法包括形成纳米线，在纳米线的表面上提供绝缘层，并在半导体结附近的绝缘层上形成壳层。

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