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11. 发明申请

US20090097008A1 Alignment Method and Apparatus, Lithographic Apparatus, Metrology Apparatus and Device Manufacturing Method 审中-公开
标题翻译：对准方法和装置，平版印刷装置，计量装置和装置制造方法
公开(公告)号：US20090097008A1
公开(公告)日：2009-04-16
申请号：US12247452
申请日：2008-10-08
申请人： Everhardus Cornelis MOS , Arie Jeffrey Den Boef , Maurits Van Der Schaar , Stefan Carolus Jacobus Antonius Keij
发明人： Everhardus Cornelis MOS , Arie Jeffrey Den Boef , Maurits Van Der Schaar , Stefan Carolus Jacobus Antonius Keij
IPC分类号： G03B27/72 , G03B27/54
CPC分类号： G03F9/7049 , G03F9/7015 , G03F9/7088
摘要： An alignment sensor includes a spatially coherent radiation source that supplies a radiation beam to an angle-resolved scatterometer. Alignment is performed by detecting beats in the scatter spectrum during scanning of the substrate relative to the scatterometer.
摘要翻译：对准传感器包括将辐射束提供给角度分辨散射仪的空间相干辐射源。通过在扫描衬底相对于散射仪的扫描期间检测散射光谱中的拍击来执行对准。

12. 发明申请

US20090066921A1 METHOD FOR PRODUCING A MARKER ON A SUBSTRATE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 失效
标题翻译：在基板上生产标记的方法，平版印刷设备和器件制造方法
公开(公告)号：US20090066921A1
公开(公告)日：2009-03-12
申请号：US12269390
申请日：2008-11-12
申请人： Maurits Van Der Schaar , Jacobus Burghoorn , Richard Johannes Franciscus Van Haren , Everhardus Cornelis Mos , Rene Monshouwer
发明人： Maurits Van Der Schaar , Jacobus Burghoorn , Richard Johannes Franciscus Van Haren , Everhardus Cornelis Mos , Rene Monshouwer
IPC分类号： G03B27/52
CPC分类号： G03F7/105 , G03F7/168 , G03F9/708 , G03F9/7084
摘要： A method of producing a marker on a substrate includes projecting a patterned beam on a layer of resist disposed on a substrate in a lithographic apparatus to create a latent marker; and locally heating the substrate at the marker location in the lithographic apparatus to transform the latent marker into a detectable marker.
摘要翻译：在衬底上产生标记的方法包括将图案化的光束投影到设置在光刻设备中的衬底的抗蚀剂层上以产生潜在标记; 并且在光刻设备中的标记位置处局部加热衬底，以将潜在标记转变成可检测标记。

13. 发明申请

US20080218767A1 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method, substrate for use in the methods 失效
标题翻译：检测方法和装置，光刻设备，光刻处理单元和器件制造方法，用于该方法的基板
公开(公告)号：US20080218767A1
公开(公告)日：2008-09-11
申请号：US11714904
申请日：2007-03-07
申请人： Everhardus Cornelis Mos , Arie Jeffrey Den Boef , Maurits Van Der Schaar
发明人： Everhardus Cornelis Mos , Arie Jeffrey Den Boef , Maurits Van Der Schaar
IPC分类号： G01B11/24
CPC分类号： G03F7/70633
摘要： An overlay marker for use with a scatterometer includes two overlying two-dimensional gratings. The two gratings have the same pitch but the upper grating has a lower duty ratio. Cross-talk between X and Y overlay measurements can therefore be avoided. The gratings may be directly overlying or off set so as to be interleaved in one or two directions.
摘要翻译：与散射仪一起使用的叠加标记包括两个上覆的二维光栅。两个光栅具有相同的间距，但是上部光栅具有较低的占空比。因此可以避免X和Y重叠测量之间的串扰。光栅可以直接覆盖或偏离设置，以便沿一个或两个方向交错。

14. 发明申请

US20080180668A1 Marker structure for optical alignment of a substrate, a substrate including such a marker structure, an alignment method for aligning to such a marker structure, and a lithographic projection apparatus 失效
标题翻译：用于基板的光学取向的标记结构，包括这种标记结构的基板，用于与这种标记结构对准的对准方法以及平版印刷设备
公开(公告)号：US20080180668A1
公开(公告)日：2008-07-31
申请号：US12003377
申请日：2007-12-21
申请人： Richard Johannes Franciscus Van Haren , Paul Christiaan Hinnen , Sanjay Lalbahadoersing , Henry Megens , Maurits Van Der Schaar
发明人： Richard Johannes Franciscus Van Haren , Paul Christiaan Hinnen , Sanjay Lalbahadoersing , Henry Megens , Maurits Van Der Schaar
IPC分类号： G01J4/00
CPC分类号： G03F9/7084 , G03F9/7046 , G03F9/7049 , G03F9/7076 , G03F9/7088 , G03F9/7092
摘要： A marker structure on a substrate for optical alignment of the substrate includes a plurality of first structural elements and a plurality of second structural elements. In use, the marker structure allows the optical alignment based upon providing at least one light beam directed on the marker structure, detecting light received from the marker structure at a sensor, and determining alignment information from the detected light, the alignment information comprising information relating a position of the substrate to the sensor.
摘要翻译：用于基板的光学取向的基板上的标记结构包括多个第一结构元件和多个第二结构元件。在使用中，标记结构允许基于提供指向标记结构的至少一个光束的光学对准，在传感器处检测从标记结构接收的光，以及从检测到的光确定对准信息，对准信息包括与基板到传感器的位置。

15. 发明授权

US07064807B2 Lithographic apparatus 有权
标题翻译：平版印刷设备
公开(公告)号：US07064807B2
公开(公告)日：2006-06-20
申请号：US10840360
申请日：2004-05-07
申请人： Cheng-Qun Gui , Henricus Wilhelmus Maria Van Buel , Maurits Van Der Schaar , Arie Jeffrey Den Boef
发明人： Cheng-Qun Gui , Henricus Wilhelmus Maria Van Buel , Maurits Van Der Schaar , Arie Jeffrey Den Boef
IPC分类号： G03B27/54 , G03B27/42 , G03B27/32 , G01B11/00
CPC分类号： G03F7/70691 , G03F7/70216 , G03F9/7084
摘要： A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system.
摘要翻译：光刻投影装置设置有内置在晶片台中的光学系统，用于产生设置在晶片背面的晶片标记的图像。图像位于晶片正面的平面上，并且可以通过对准系统从晶片的正面观察。可以使用预先存在的对准系统来执行晶片背面和前面的标记与掩模之间的同时对准。

16. 发明申请

US20060103033A1 Marker structure and method for controlling alignment of layers of a multi-layered substrate 有权
公开(公告)号：US20060103033A1
公开(公告)日：2006-05-18
申请号：US10986179
申请日：2004-11-12
申请人： Richard Johannes Van Haren , Arie Den Boef , Jacobus Burghoorn , Maurits Van Der Schaar , Bartolomeus Rijpers
发明人： Richard Johannes Van Haren , Arie Den Boef , Jacobus Burghoorn , Maurits Van Der Schaar , Bartolomeus Rijpers
IPC分类号： H01L23/544
CPC分类号： H01L23/544 , G03F7/70633 , G03F9/7049 , G03F9/7065 , G03F9/7076 , G03F9/7092 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： The invention includes a lithographic system having a first source for generating radiation with a first wavelength and an alignment system with a second source for generating radiation with a second wavelength. The second wavelength is larger than the first wavelength. A marker structure is provided having a first layer and a second layer. The second layer is present either directly or indirectly on top of said first layer. The first layer has a first periodic structure and the second layer has a second periodic structure. At least one of the periodic structures has a plurality of features in at least one direction with a dimension smaller than 400 nm. Additionally, a combination of the first and second periodic structure forms a diffractive structure arranged to be illuminated by radiation with the second wavelength.

17. 发明授权

US06987556B2 Lithographic projection apparatus, a method for determining a position of a substrate alignment mark, a device manufacturing method and device manufactured thereby 失效
公开(公告)号：US06987556B2
公开(公告)日：2006-01-17
申请号：US10702648
申请日：2003-11-07
申请人： Maurits van der Schaar , Irwan D. Setija , Everhardus C. Mos
发明人： Maurits van der Schaar , Irwan D. Setija , Everhardus C. Mos
IPC分类号： G03B27/54 , G03B27/42 , G01B11/00 , G01N21/86
CPC分类号： G03F9/7084 , G03F9/7053
摘要： Alignment to buried marks is carried out by using electromagnetic radiation to induce waves in the layers covering the buried layer. The acoustic or thermal waves cause reflectivity changes and displacements in the surface whose position and/or time dependence reveals the true position of the buried alignment mark. The buried alignment mark may be revealed by mapping the thickness of covering layers in its vicinity, e.g. by measuring the time dependence of the decay of a standing wave induced in the covering layers or by measuring the delay time of echoes of a travelling wave created at interfaces between different ones of the covering layers. Alternatively, a travelling wave can be created over the whole area of the mark so that echoes off the top and bottom of the buried mark carry positive and negative images of the mark; these cause reflectivity differences and displacements when they reach the surface which can be aligned to.

18. 发明授权

US09494872B2 Inspection method for lithography 有权
标题翻译：光刻检验方法
公开(公告)号：US09494872B2
公开(公告)日：2016-11-15
申请号：US13060390
申请日：2009-09-08
申请人： Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar
发明人： Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , G03F7/70625
摘要： The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.
摘要翻译：本发明涉及一种检查装置和方法，其包括将测量辐射束投射到基板上的目标上，以便测量从目标反射的辐射，并获得与基板的特性有关的信息。在本实施例中，作为基板上的聚焦光束的测量点大于目标。关于从目标反射的辐射的信息被保留，并且关于从目标周围的表面反射的辐射的信息被消除。这可以通过在靶周围没有反射（或没有镜面反射）表面或通过在靶周围具有已知结构来完成，可以从总反射光束识别和去除信息。在投影仪的瞳平面中测量反射光束，使得所获得的信息与反射光束的衍射级和轮廓，基底上的结构的临界尺寸或重叠相关。

19. 发明授权

US08982329B2 Method and apparatus for measuring line end shortening, substrate and patterning device 有权
标题翻译：用于测量线端缩短的方法和装置，基板和图案形成装置
公开(公告)号：US08982329B2
公开(公告)日：2015-03-17
申请号：US12933806
申请日：2009-04-22
申请人： Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Marcus Adrianus Van De Kerkhof
发明人： Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Marcus Adrianus Van De Kerkhof
IPC分类号： G03B27/32 , G01B11/14 , G03F7/20 , G01N21/956 , G03F1/00 , G03F1/44
CPC分类号： G03F7/70683 , G01N21/95607 , G03F1/0092 , G03F1/14 , G03F1/44 , G03F1/84 , G03F7/70625 , G03F7/70641
摘要： End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.
摘要翻译：在使用光刻设备的部件的制造期间可能发生线路效应的结束。这些线路效应的结束可能导致正在制造的功能的线端缩短。这种线端缩短可能对正在制造的部件产生不利影响。因此，希望预测和/或监视线端缩短。提供了具有两个独立区域的测试图案，使得如设计的那样，当两个区域被辐射照射时（例如，从角度分辨的散射仪）照射，它们导致具有彼此相等的不对称性的漫射辐射，但在数量上相反。当实际制造测试图形时，发生线端缩短，因此两个区域的不对称性不相等。根据制造的测试图案的测量不对称性，可以估计发生的线端缩短量。

20. 发明授权

US08111398B2 Method of measurement, an inspection apparatus and a lithographic apparatus 有权
标题翻译：测量方法，检查装置和光刻设备
公开(公告)号：US08111398B2
公开(公告)日：2012-02-07
申请号：US12770153
申请日：2010-04-29
申请人： Maurits Van der Schaar , Arie Jeffrey Den Boef , Everhardus Cornelis Mos
发明人： Maurits Van der Schaar , Arie Jeffrey Den Boef , Everhardus Cornelis Mos
IPC分类号： G01B11/00 , G03C5/00
CPC分类号： G03F7/70633 , H01L22/12
摘要： According to an example, a first layer of a substrate comprises a plurality of gratings having a periodicity P. A second layer of the substrate comprises a plurality of gratings, overlapping with the first set of gratings, and having a periodicity of NP, where N is an integer greater than 2. A first set of gratings has a bias of +d and the second set of gratings has a bias of −d. A beam of radiation is projected onto the gratings and the angle resolved spectrum of the reflected radiation detected. The overlay error is then calculated using the angle resolved spectrum of the reflected radiation.
摘要翻译：根据示例，衬底的第一层包括具有周期P的多个光栅。衬底的第二层包括与第一组光栅重叠并且具有NP的周期性的多个光栅，其中N 是大于2的整数。第一组光栅具有+ d的偏置，第二组光栅具有-d的偏置。将辐射束投射到光栅上，并检测到反射辐射的角度分辨光谱。然后使用反射辐射的角度分辨光谱计算覆盖误差。

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