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    • 18. 发明授权
    • Inspection method for lithography
    • 光刻检验方法
    • US09494872B2
    • 2016-11-15
    • US13060390
    • 2009-09-08
    • Kaustuve BhattacharyyaArie Jeffrey Den BoefMarcus Adrianus Van De KerkhofMaurits Van Der Schaar
    • Kaustuve BhattacharyyaArie Jeffrey Den BoefMarcus Adrianus Van De KerkhofMaurits Van Der Schaar
    • G03F7/20
    • G03F7/70633G03F7/70625
    • The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.
    • 本发明涉及一种检查装置和方法,其包括将测量辐射束投射到基板上的目标上,以便测量从目标反射的辐射,并获得与基板的特性有关的信息。 在本实施例中,作为基板上的聚焦光束的测量点大于目标。 关于从目标反射的辐射的信息被保留,并且关于从目标周围的表面反射的辐射的信息被消除。 这可以通过在靶周围没有反射(或没有镜面反射)表面或通过在靶周围具有已知结构来完成,可以从总反射光束识别和去除信息。 在投影仪的瞳平面中测量反射光束,使得所获得的信息与反射光束的衍射级和轮廓,基底上的结构的临界尺寸或重叠相关。