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11. 发明公开

EP0708327A1 Method and apparatus for thermal impedance evaluation of packaged semiconductor components 失效
标题翻译：用于测量集成半导体元件的热阻抗的方法和装置，
公开(公告)号：EP0708327A1
公开(公告)日：1996-04-24
申请号：EP95870116.1
申请日：1995-10-19
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , INSTITUUT VOOR MATERIAALONDERZOEK LIMBURGS UNIVERSITAIR CENTRUM
发明人： Christiaens, Filip , Tielemans, Luc , De Schepper, Luc , Beyne, Eric
IPC分类号： G01N25/18
CPC分类号： G01N25/18
摘要： The present invention is related to a system for evaluating the thermal impedance of packaged semiconductor chips. The measuring apparatus according to the invention includes a thermostatic bath filled with a dielectric liquid and a temperature sensor for measuring the temperature of said bath.
The semiconductor chip is subjected to a calibration step followed by a thermal response measurement step. Increasing the power pulse length allows measurement of the steady-state junction-to-case thermal resistance. The measuring apparatus and method is further used for tracing in-situ degradation of packaged semiconductor chips due to power cycling.
摘要翻译：本发明涉及一种系统，用于评估封装的半导体芯片的热阻抗。的测量装置gemäß到本发明包括填充有介电液体和用于测量所述浴的温度的温度传感器的恒温浴中。在半导体芯片进行随后的热响应测量步骤的校准步骤。增加功率脉冲长度允许稳态结到外壳的热阻的测量。的测量装置和方法被用于追踪另外的原位封装的半导体芯片的劣化由于功率循环。

12. 发明公开

EP1266010A2 GENETICALLY MODIFIED PLANTS AND PLANT CELLS COMPRISING HETEROLOGOUS HEAVY METAL TRANSPORT AND COMPLEXATION PROTEINS 审中-公开
标题翻译：转基因植物和植物细胞异种SCHWERMETALLTRANSPORT-并具有-KOMPLEXBILDUNGSPROTEINE
公开(公告)号：EP1266010A2
公开(公告)日：2002-12-18
申请号：EP01914851.9
申请日：2001-03-22
申请人： VLAAMSE INSTELLING VOOR TECHNOLOGISCH ONDERZOEK,afgekort V.I.T.O.,onderneming van openbaar nut onder de vorm van een n.v. , LIMBURGS UNIVERSITAIR CENTRUM , VRIJE UNIVERSITEIT BRUSSEL , Kärenlampi, Sirpa Orvokki , Tervahauta, Arja Irmeli
发明人： KÄRENLAMPI, Sirpa, Orvokki , TERVAHAUTA, Arja, Irmeli , BORREMANS, Brigitte , BOUSMANS, Nathalie , JACOBS, Michel , MERGEAY, Maximilien , VAN DER LELIE, Dani[l , VANGRONSVELD, Jaco
IPC分类号： C12N15/31 , C12N15/82 , C07K14/195 , C02F3/32 , B09C1/00 , A61K38/16 , A01H5/00
CPC分类号： C07K14/195 , C12N9/14 , C12N15/8242 , C12N15/8259 , C12N15/8271
摘要： The present invention relates to genetically modified plants and plant cells, comprising nucleotide sequences encoding heterologous heavy metal transport protein.

13. 发明授权

EP0395149B1 Method and device for accelerated determining of ageing of one or more elements with an electromagnetic ageing parameter 失效
标题翻译：方法和装置，用于确定一个或多个元件的加速老化用电磁老化参数。
公开(公告)号：EP0395149B1
公开(公告)日：1995-06-28
申请号：EP90200990.1
申请日：1990-04-19
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , LIMBURGS UNIVERSITAIR CENTRUM
发明人： Stals, Lambert Mathias Maria , Roggen, Jean Joseph Marie , De Schepper, Luc Irena , De Ceuninck, Ward Aimé Stefan
IPC分类号： G01R31/26 , G01R31/30
CPC分类号： G01R31/2862 , G01R31/2642 , G01R31/2874 , G01R31/2881

14. 发明公开

EP0395149A1 Method and device for accelerated determining of ageing of one or more elements with an electromagnetic ageing parameter 失效
标题翻译：方法和装置，用于确定一个或多个元件的加速老化用电磁老化参数。
公开(公告)号：EP0395149A1
公开(公告)日：1990-10-31
申请号：EP90200990.1
申请日：1990-04-19
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , LIMBURGS UNIVERSITAIR CENTRUM
发明人： Stals, Lambert Mathias Maria , Roggen, Jean Joseph Marie , De Schepper, Luc Irena , De Ceuninck, Ward Aimé Stefan
IPC分类号： G01R31/26 , G01R31/30
CPC分类号： G01R31/2862 , G01R31/2642 , G01R31/2874 , G01R31/2881
摘要： A method for determining the impedance change of an electromagnetic ageing parameter on one or more elements having such a parameter, wherein the element is placed in an oven at a predetermined temperature and wherein a measurement of the resistance at this temperature is performed.
摘要翻译：执行在具有搜索参数的一个或多个元件的电磁老化参数的阻抗变化，所述worin元件在规定的温度放置在烘箱中，worin在此温度下电阻的测量用于确定性采矿的方法。

15. 发明授权

EP1306910B1 Ambipolar organic transistors 有权
标题翻译：双极性有机晶体管
公开(公告)号：EP1306910B1
公开(公告)日：2011-08-17
申请号：EP02447197.1
申请日：2002-10-15
申请人： IMEC , Agfa-Gevaert N.V. , LIMBURGS UNIVERSITAIR CENTRUM
发明人： Geens, Wim , Poortmans, Jef , Aernouts, Tom , Andriessen, Hieronymus , Vanderzande, Dirk
IPC分类号： H01L51/05
CPC分类号： H01L51/0508 , B82Y10/00 , H01L51/0036 , H01L51/0038 , H01L51/0046

16. 发明公开

EP0939434A1 Method for fabricating ferroelectric thin films using a sol-gel technique 失效
标题翻译： Herstellung eines ferroelektrischen Films durch ein Sol-Gel-Verfahren
公开(公告)号：EP0939434A1
公开(公告)日：1999-09-01
申请号：EP98870038.1
申请日：1998-02-25
申请人： INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW , LIMBURGS UNIVERSITAIR CENTRUM
发明人： Wouters, Dirk , Norga, Gerd , Maes, Herman , Nouwen, Ria , Mullens, Jules , Franco, Dirk , Yperman, Jan , Van Poucke, Lucien C.
IPC分类号： H01L21/316 , H01L21/3205 , C23C18/12
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1225 , C23C18/1254 , H01L21/02197 , H01L28/55
摘要： A method is disclosed for the formation of ferro-electric films using a multi coating process based on a sol-gel technique. In particular a method is disclosed to fabricate high-quality thickness scaled PZT films of an alkoxide-type liquid chemical PZT precursor solution, preferably a Pb(Zr x Ti 1-x )O 3 precursor solution, using a sol-gel technique. At least two coated layers are deposited, but the precise number of coated layers depends on the desired thickness of the ferro-electric film. According to the method of the invention, the electrical characteristics of the film as formed are not dependent on the number of coated layers. There are a number of properties, characteristic for the method of the present invention, and resulting in said excellent electrical characteristics. In fact said method can comprise a multi coating process wherein a reduced number of coated layers is used but where intermediate crystallization steps are performed. The ferro-electric films formed using this method have excellent electrical characteristics, provided that a crystallization step is only performed if the thickness of the film formed since the last crystallization step is minimum about 40 to 50 nm. Alternatively, the method can comprise a multi coating process wherein no intermediate crystallization steps are used.
摘要翻译：公开了一种使用基于溶胶 - 凝胶技术的多涂层方法形成铁电膜的方法。具体地，公开了使用溶胶 - 凝胶技术制造醇盐型液体化学PZT前体溶液，优选Pb（Zr x Ti 1-x）O 3前体溶液的高质量厚度比例的PZT膜的方法。沉积至少两层涂层，但涂层的精确数量取决于铁电薄膜的所需厚度。根据本发明的方法，形成的膜的电特性不依赖于涂层的数量。本发明的方法具有许多特性，并具有优异的电特性。事实上，所述方法可以包括多层涂覆方法，其中使用减少数量的涂层，但是进行中间结晶步骤。使用该方法形成的铁电膜具有优异的电特性，条件是仅当从最后一个结晶步骤形成的膜的厚度最小为约40至50nm时才进行结晶步骤。或者，该方法可以包括其中不使用中间结晶步骤的多涂层方法。

17. 发明公开

EP0907085A1 A method for measuring electromigration-induced resistance changes 失效
标题翻译： Verfahren zum Messen vonWiederstandsänderungendurch Elektromigration
公开(公告)号：EP0907085A1
公开(公告)日：1999-04-07
申请号：EP97870149.8
申请日：1997-10-03
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , Limburgs Universitair Centrum
发明人： De Ceuninck, Ward , De Schepper, Luc , Van Olmen, Jan , Goldoni, Alessandro
IPC分类号： G01R31/316
CPC分类号： G01R31/2858
摘要： A method for measuring resistance changes is disclosed to study electromigration induced failures in conductive patterns. Said method can provide a basis for lifetime predictions based on low value failure criteria, i.e. small resistance changes in said conductive patterns in a limited period of time. Two essentially identical so-called test and reference structures are placed close to each other on the same substrate and submitted to at least one sequence of a stress period and a measurement period. During a stress period, a DC current with a high current density is applied to the test structure thereby enhancing electromigration, while substantially simultaneous an AC current is applied to the reference structure leading to the same amount of power dissipation in said reference structure as the amount of power dissipation in said test structure, introduced by said DC stress current. The method of the present invention makes it possible to distinguish in a very accurate way between resistance changes induced by electromigration and resistance changes induced by other disturbances.
摘要翻译：公开了一种用于测量电阻变化的方法，以研究导电图案中的电迁移引起的故障。所述方法可以提供基于低值失效标准的寿命预测的基础，即在有限的时间段内所述导电图案中的小电阻变化。两个基本上相同的所谓的测试和参考结构在相同的衬底上彼此靠近放置并且被提交至至少一个应力周期和测量周期的序列。在应力周期期间，将具有高电流密度的直流电流施加到测试结构，从而增强电迁移，同时基本上同时将AC电流施加到参考结构，导致在所述参考结构中相同量的功率耗散量，所述测试结构中的功率耗散由所述直流应力电流引入。本发明的方法使得可以以非常准确的方式区分由电迁移引起的电阻变化和由其它干扰引起的电阻变化。

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