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11. 发明授权

US06842088B2 Thin film acoustic resonator and method of producing the same 有权
标题翻译：薄膜声谐振器及其制造方法
公开(公告)号：US06842088B2
公开(公告)日：2005-01-11
申请号：US10142233
申请日：2002-05-09
申请人： Tetsuo Yamada , Keigo Nagao , Chisen Hashimoto
发明人： Tetsuo Yamada , Keigo Nagao , Chisen Hashimoto
IPC分类号： H04R19/02 , B06B1/06 , G10K11/04 , H01L41/09 , H01L41/22 , H01L41/313 , H03H3/02 , H03H9/02 , H03H9/05 , H03H9/13 , H03H9/17 , H03H9/56 , H03H9/58 , H04R31/00 , H03H9/15 , H03H9/54
CPC分类号： H03H9/173 , B06B1/0644 , G10K11/04 , H03H3/02 , H03H9/02094 , H03H9/02102 , H03H9/02149 , H03H9/174 , H03H9/562 , H03H9/564 , H03H9/585 , H03H9/587 , H03H2003/021 , H03H2003/0428 , Y10S977/888 , Y10T29/42 , Y10T29/49155
摘要： A pit (52) is formed in a substrate comprising a silicon wafer (51) on a surface of which a silicon oxide thin layer (53) is formed. A sandwich structure (60) comprising a piezoelectric layer (62) and lower and upper electrodes (61, 63) joined to both surfaces of the piezoelectric layer is disposed so as to stride over the pit (52). The upper surface of the lower electrode (61) and the lower surface of the piezoelectric layer (62) joined to the upper surface of the lower electrode are treated so that the RMS variation of the height thereof is equal to 25 nm or less. The thickness of the lower electrode (61) is set to 150 nm or less. According to such a structure, there is provided a high-performance thin film bulk acoustic resonator which are excellent in electromechanical coupling coefficient and acoustic quality factor.
摘要翻译：在其表面上形成有硅晶片（51）的基板中形成有凹坑（52），其形成有氧化硅薄层（53）。包括压电层（62）的三明治结构（60）和与压电层的两个表面接合的下电极和上电极（61,63），以跨越凹坑（52）。处理下电极（61）的上表面和接合到下电极的上表面的压电层（62）的下表面，使得其高度的RMS变化等于25nm或更小。下电极（61）的厚度设定为150nm以下。根据这样的结构，提供了机电耦合系数和声音质量因子优异的高性能薄膜体声波谐振器。

12. 发明授权

US07965017B2 Thin film piezoelectric resonator and method for manufacturing the same 有权
标题翻译：薄膜压电谐振器及其制造方法
公开(公告)号：US07965017B2
公开(公告)日：2011-06-21
申请号：US12438794
申请日：2007-08-24
申请人： Kazuki Iwashita , Keigo Nagao , Shinji Fukuda
发明人： Kazuki Iwashita , Keigo Nagao , Shinji Fukuda
IPC分类号： H01L41/09
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02086 , H03H9/02149 , H03H9/132 , H03H9/174 , H03H2003/021
摘要： A thin film piezoelectric resonator suppresses deterioration of impedance at antiresonant frequency and has a high Q value. The thin film piezoelectric resonator is provided with a semiconductor substrate (8); an insulating layer (6) formed on the semiconductor substrate (8) in contact with the surface of the semiconductor substrate; and a piezoelectric resonator stack (14) formed above the insulating layer and having a lower electrode (10), a piezoelectric layer (2) and an upper electrode (12) in this order from the insulating layer side. An oscillation space (4) is formed corresponding to an oscillation region where the lower electrode (10) and the upper electrode (12) of the piezoelectric resonator stack (14) overlap each other in the thickness direction. The fixed charge density in the insulating layer (6) is 1×1011 cm−2 or less. At the time of manufacturing the thin film piezoelectric resonator, the insulating layer is formed in contact with the semiconductor substrate and then, heat treatment at 300° C. or higher is performed under non-oxygenated atmosphere.
摘要翻译：薄膜压电谐振器抑制反谐振频率下的阻抗恶化并具有高Q值。薄膜压电谐振器设置有半导体衬底（8）; 形成在与半导体衬底的表面接触的半导体衬底上的绝缘层; 以及在绝缘层的上方形成有绝缘层侧依次具有下电极（10），压电层（2）和上电极（12）的压电谐振器叠层（14）。对应于压电谐振器叠层（14）的下电极（10）和上电极（12）在厚度方向上彼此重叠的振荡区域形成振荡空间（4）。绝缘层（6）中的固定电荷密度为1×1011cm -2以下。在制造薄膜压电谐振器时，绝缘层形成为与半导体衬底接触，然后在非氧化气氛下进行300℃以上的热处理。

13. 发明申请

US20090322186A1 THIN FILM PIEZOELECTRIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜压电谐振器及其制造方法
公开(公告)号：US20090322186A1
公开(公告)日：2009-12-31
申请号：US12438794
申请日：2007-08-24
申请人： Kazuki Iwashita , Keigo Nagao , Shinji Fukuda
发明人： Kazuki Iwashita , Keigo Nagao , Shinji Fukuda
IPC分类号： H01L41/053
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02086 , H03H9/02149 , H03H9/132 , H03H9/174 , H03H2003/021
摘要： A thin film piezoelectric resonator suppresses deterioration of impedance at antiresonant frequency and has a high Q value. The thin film piezoelectric resonator is provided with a semiconductor substrate (8); an insulating layer (6) formed on the semiconductor substrate (8) in contact with the surface of the semiconductor substrate; and a piezoelectric resonator stack (14) formed above the insulating layer and having a lower electrode (10), a piezoelectric layer (2) and an upper electrode (12) in this order from the insulating layer side. An oscillation space (4) is formed corresponding to an oscillation region where the lower electrode (10) and the upper electrode (12) of the piezoelectric resonator stack (14) overlap each other in the thickness direction. The fixed charge density in the insulating layer (6) is 1×1011 cm−2 or less. At the time of manufacturing the thin film piezoelectric resonator, the insulating layer is formed in contact with the semiconductor substrate and then, heat treatment at 300° C. or higher is performed under non-oxygenated atmosphere.
摘要翻译：薄膜压电谐振器抑制反谐振频率下的阻抗恶化并具有高Q值。薄膜压电谐振器设置有半导体衬底（8）; 形成在与半导体衬底的表面接触的半导体衬底上的绝缘层; 以及在绝缘层的上方形成有绝缘层侧依次具有下电极（10），压电层（2）和上电极（12）的压电谐振器叠层（14）。对应于压电谐振器叠层（14）的下电极（10）和上电极（12）在厚度方向上彼此重叠的振荡区域形成振荡空间（4）。绝缘层（6）中的固定电荷密度为1×10 11 cm -2以下。在制造薄膜压电谐振器时，绝缘层形成为与半导体衬底接触，然后在非氧化气氛下进行300℃以上的热处理。

14. 发明申请

US20060033595A1 Method of manufacturing piezoelectric thin film device and piezoelectric thin film device 有权
标题翻译：制造压电薄膜器件和压电薄膜器件的方法
公开(公告)号：US20060033595A1
公开(公告)日：2006-02-16
申请号：US10538137
申请日：2004-12-17
申请人： Keigo Nagao , Tetsuro Kunisawa , Tetsuo Yamada
发明人： Keigo Nagao , Tetsuro Kunisawa , Tetsuo Yamada
IPC分类号： H03H9/54
CPC分类号： H03H3/04 , H01L41/316 , H03H9/173 , H03H9/174
摘要： Method of producing a piezoelectric thin film device comprises a step of forming an insulating layer (12) capable of being etched by a specific chemical substance on the upper surface of a substrate (11); a step of forming a sacrificial layer (13) made of a substance having a higher etching rate by the specific chemical substance than the insulating layer on a partial region of the insulating layer; a step of forming a lower electrode (15) on a region including the sacrificial layer; a step of forming the piezoelectric thin film (16) on a region including a part of the lower electrode; a step of forming an upper electrode (17) on a region including a part of the piezoelectric thin film; a step of forming via hole (18), which penetrates the piezoelectric thin film and lower electrode, so as to expose a part of the sacrificial layer; and a step of forming a space (20) for oscillation by etching both the sacrificial layer and the insulating layer with the same specific chemical substance by introducing the specific chemical substance through the via hole.
摘要翻译：制造压电薄膜器件的方法包括在衬底（11）的上表面上形成能够被特定化学物质蚀刻的绝缘层（12）的步骤; 在所述绝缘层的部分区域上形成由具有比所述绝缘层更高的蚀刻速率的物质制成的牺牲层（13）的步骤; 在包括所述牺牲层的区域上形成下电极（15）的步骤; 在包括下电极的一部分的区域上形成压电薄膜（16）的步骤; 在包括压电薄膜的一部分的区域上形成上电极（17）的步骤; 形成穿过压电薄膜和下电极的通孔（18）的步骤，以暴露牺牲层的一部分; 以及通过使特定的化学物质通过通孔，通过用相同的特定化学物质蚀刻牺牲层和绝缘层来形成用于振荡的空间（20）的步骤。

15. 发明授权

US06692769B1 Sustained-release particles 失效
标题翻译：持续释放颗粒
公开(公告)号：US06692769B1
公开(公告)日：2004-02-17
申请号：US09830368
申请日：2001-04-26
申请人： Takashi Ishibashi , Keigo Nagao , Kengo Ikegami , Hiroyuki Yoshino , Masakazu Mizobe
发明人： Takashi Ishibashi , Keigo Nagao , Kengo Ikegami , Hiroyuki Yoshino , Masakazu Mizobe
IPC分类号： A61K914
CPC分类号： A61K9/2081 , A61K9/1623 , A61K9/1635 , A61K9/1652 , A61K9/1658 , A61K9/5042
摘要： The present invention discloses sustained release particles having a mean particle size of 300 &mgr;m, or less, comprising a drug-containing core substance coated with a mixed coating of a hydrophobic organic compound-water-insoluble polymer, which prevents sticking during compression molding when producing oral sustained release tablets, a preparation method of those sustained release particles, and a preparation method of tablets using those sustained release particles.
摘要翻译：本发明公开了平均粒度为300μm以下的缓释颗粒，其包含涂覆有疏水性有机化合物 - 水不溶性聚合物的混合涂层的含药核心物质，其防止在压缩成型期间产生粘附口服缓释片剂，这些缓释颗粒的制备方法以及使用这些缓释颗粒的片剂的制备方法。

16. 发明授权

US06692768B1 Preparation method of drug-containing spherical fine particles 失效
标题翻译：含药球形微粒的制备方法
公开(公告)号：US06692768B1
公开(公告)日：2004-02-17
申请号：US09830345
申请日：2001-04-26
申请人： Takashi Ishibashi , Keigo Nagao , Kengo Ikegami , Hiroyuki Yoshino , Masakazu Mizobe
发明人： Takashi Ishibashi , Keigo Nagao , Kengo Ikegami , Hiroyuki Yoshino , Masakazu Mizobe
IPC分类号： A61K916
CPC分类号： A61K9/1694 , A61K9/1652 , A61K9/5015 , A61K9/5047 , B01J2/10 , B01J2/14
摘要： The present invention discloses an efficient preparation method of spherical fine particles containing a drug for an easily-swallowed, controlled-release preparation comprising the production of drug-containing spherical fine particles (mean particle size: 60-200 &mgr;m) by adding a binder solution to a mixture containing an excipient powder having the property of retaining solvent (and preferably having a mean length of the long axis of 40 &mgr;m or less) and a drug powder (preferably having a mean length of the long axis of 50 &mgr;m or less), followed by high-speed mixing granulation.
摘要翻译：本发明公开了一种含有容易吞咽的控释制剂的药物的球状微粒的有效制备方法，其包括通过添加粘合剂溶液来制备含药球形微粒（平均粒径：60〜200μm）具有保持溶剂（优选长轴长度为40μm以下）的特性的赋形剂粉末和药物粉末（优选长轴的平均长度为50μm以下）的混合物，，然后进行高速混合造粒。

17. 发明授权

US07220430B2 Sustained-release preparation and process for producing the same 失效
标题翻译：缓释制剂及其制备方法
公开(公告)号：US07220430B2
公开(公告)日：2007-05-22
申请号：US10182239
申请日：2001-01-26
申请人： Takashi Ishibashi , Kengo Ikegami , Keigo Nagao , Hiroyuki Yoshino , Masakazu Mizobe
发明人： Takashi Ishibashi , Kengo Ikegami , Keigo Nagao , Hiroyuki Yoshino , Masakazu Mizobe
IPC分类号： A61K9/24 , A61K9/22 , A61K9/28 , A61K9/30 , A61K9/42
CPC分类号： A61K9/2886 , A61K9/282 , A61K9/2833 , A61K9/2866 , A61K9/5015 , A61K9/5031 , A61K9/5047 , A61K9/5073
摘要： The present invention is to provide a sustained release preparation comprising a drug-containing core substance and a multilayered coating layer covering the core substance, wherein all adjacent layers in the multilayered coating layer contain mutually different hydrophobic organic compound-water-soluble polymer mixtures; and, a method of producing a sustained release preparation, having a multilayered coating layer in which adjacent layers contain different hydrophobic organic compound-water-soluble polymer mixtures, which comprises spray-coating a solution containing a hydrophobic organic compound-water-soluble polymer mixture onto a drug-containing core substance, continuing to spray-coat a solution containing a different hydrophobic organic compound-water-soluble polymer mixture onto the resulting coating layer, and repeating this step.
摘要翻译：本发明提供一种包含药物核心物质和覆盖核心物质的多层涂层的缓释制剂，其中多层涂层中的所有相邻层含有相互不同的疏水性有机化合物 - 水溶性聚合物混合物; 以及制备缓释制剂的方法，其具有多层涂层，其中相邻层含有不同的疏水性有机化合物 - 水溶性聚合物混合物，其包括喷涂包含疏水性有机化合物 - 水溶性聚合物混合物的溶液向含药物的核心物质上继续将含有不同的疏水性有机化合物 - 水溶性聚合物混合物的溶液喷雾到所得涂层上，并重复该步骤。

18. 发明申请

US20050093397A1 Thin film bulk acoustic resonator and method of producing the same 有权
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US20050093397A1
公开(公告)日：2005-05-05
申请号：US10995447
申请日：2004-11-23
申请人： Tetsuo Yamada , Keigo Nagao , Chisen Hashimoto
发明人： Tetsuo Yamada , Keigo Nagao , Chisen Hashimoto
IPC分类号： H04R19/02 , B06B1/06 , G10K11/04 , H01L41/09 , H01L41/22 , H01L41/313 , H03H3/02 , H03H9/02 , H03H9/05 , H03H9/13 , H03H9/17 , H03H9/56 , H03H9/58 , H04R31/00 , H01L41/08
CPC分类号： H03H9/173 , B06B1/0644 , G10K11/04 , H03H3/02 , H03H9/02094 , H03H9/02102 , H03H9/02149 , H03H9/174 , H03H9/562 , H03H9/564 , H03H9/585 , H03H9/587 , H03H2003/021 , H03H2003/0428 , Y10S977/888 , Y10T29/42 , Y10T29/49155
摘要： A pit (52) is formed in a substrate comprising a silicon wafer (51) on a surface of which a silicon oxide thin layer (53) is formed. A sandwich structure (60) comprising a piezoelectric layer (62) and lower and upper electrodes (61, 63) joined to both surfaces of the piezoelectric layer is disposed so as to stride over the pit (52). The upper surface of the lower electrode (61) and the lower surface of the piezoelectric layer (62) joined to the upper surface of the lower electrode are treated so that the RMS variation of the height thereof is equal to 25 nm or less. The thickness of the lower electrode (61) is set to 150 nm or less. According to such a structure, there is provided a high-performance thin film bulk acoustic resonator which are excellent in electromechanical coupling coefficient and acoustic quality factor.
摘要翻译：在其表面上形成有硅晶片（51）的基板中形成有凹坑（52），其形成有氧化硅薄层（53）。包括压电层（62）的三明治结构（60）和与压电层的两个表面接合的下电极和上电极（61,63），以跨越凹坑（52）。处理下电极（61）的上表面和接合到下电极的上表面的压电层（62）的下表面，使得其高度的RMS变化等于25nm或更小。下电极（61）的厚度设定为150nm以下。根据这样的结构，提供了机电耦合系数和声音质量因子优异的高性能薄膜体声波谐振器。

19. 发明授权

US06885260B2 Filter using film bulk acoustic resonator and transmission/reception switch 有权
标题翻译：使用薄膜体声波谐振器和发射/接收开关进行滤波
公开(公告)号：US06885260B2
公开(公告)日：2005-04-26
申请号：US10476218
申请日：2002-05-10
申请人： Kosuke Nishimura , Keigo Nagao , Chisen Hashimoto , Eiji Masui , Hirofumi Kimura
发明人： Kosuke Nishimura , Keigo Nagao , Chisen Hashimoto , Eiji Masui , Hirofumi Kimura
IPC分类号： H03H7/19 , H03H9/05 , H03H9/58 , H04B1/52 , H03H9/70 , H03H9/56
CPC分类号： H03H9/706 , H03H7/19 , H03H9/0571 , H04B1/52
摘要： A transmission band filter (110) having a series of elements (111, 113, 115) each composed of a film bulk acoustic resonator and grounded shunt elements (112, 114) each composed of a film bulk acoustic resonator is connected between a transmission port (102) and an antenna port (106). A reception band filter (130) having a series of elements (131, 133, 135) each composed of a film bulk acoustic resonator and grounded shunt elements (132, 134, 136) each composed of a film bulk acoustic resonator is connected between a reception port (104) and the antenna port (106). A film bulk acoustic resonator (150) for adjustment is connected between the antenna port (106) and the ground. The resonance frequency of the adjusting film bulk acoustic resonator (150) lies between the upper limit frequency of the transmission frequency pass band of the transmission band filter (110) and the lower limit frequency of the reception frequency pass band of the reception band filter (130). Therefore a duplexer such that it can be a monolithic element, the power handling capability is good, the size is small, and the cost is low is provided.
摘要翻译：具有由薄膜体声波谐振器构成的一系列元件（111,113,115）的传输带滤波器（110）和由薄膜体声共振器构成的接地分流元件（112,114）连接在传输端口（102）和天线端口（106）。具有由薄膜体声波谐振器和由薄膜体声波谐振器组成的接地分路元件（132,134,136）构成的一系列元件（131,133,135）的接收带滤波器（130）连接在接收端口（104）和天线端口（106）。用于调整的薄膜体声共振器（150）连接在天线端口（106）和地面之间。调整膜体声波谐振器（150）的共振频率位于传输带滤波器（110）的发送频率通带的上限频率与接收频带滤波器的接收频率通带的下限频率之间 130）。因此，双工器可以是单片元件，功率处理能力好，尺寸小，成本低廉。

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