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    • 17. 发明申请
    • ELECTROCHROMIC TUNGSTEN OXIDE FILM DEPOSITION
    • 电致变色氧化钨薄膜沉积
    • WO2012099975A3
    • 2012-11-01
    • PCT/US2012021740
    • 2012-01-18
    • APPLIED MATERIALS INCJIANG CHONGKWAK BYUNG SUNG LEO
    • JIANG CHONGKWAK BYUNG SUNG LEO
    • C23C14/34
    • C23C14/0089C23C14/0036C23C14/0042C23C14/083
    • A deposition method for electrochromic WOx films involves cyclic deposition of very thin poisoned and metallic tungsten oxide layers to build up a film with a desired general stoichiometry with x in the range of 3>x>2.75. The method may include: charging a deposition chamber with oxygen gas to poison a tungsten metal target; initiating sputtering of the target while reducing the oxygen partial pressure being supplied to the chamber and pumping the chamber; sputtering target for time t1 + t2 to form, first and second tungsten oxide layers, where the first layer is deposited during time ti from a poisoned target and the second layer is deposited during time t2 from a metallic target, and where the stoichiometry of the film comprising the first and second layers is a function of t1 and t2; and, repeating until a desired film thickness is achieved.
    • 电致变色WOx薄膜的沉积方法包括非常薄的中毒和金属钨氧化物层的循环沉积,以形成具有在3> x> 2.75范围内的x的期望的一般化学计量的薄膜。 该方法可以包括:用氧气向沉积室充电以毒化钨金属靶; 开始靶的溅射,同时减少供应到室的氧分压并泵送室; 溅射靶在时间t 1 + t 2以形成第一和第二钨氧化物层,其中第一层在时间t 1期间从中毒靶沉积并且第二层在时间t 2期间从金属靶沉积,并且其中化学计量 包括第一和第二层的膜是t1和t2的函数; 并重复,直到达到所需的膜厚度。
    • 20. 发明申请
    • PINHOLE-FREE DIELECTRIC THIN FILM FABRICATION
    • 无孔电介质薄膜制造
    • WO2012174260A2
    • 2012-12-20
    • PCT/US2012/042487
    • 2012-06-14
    • APPLIED MATERIALS, INC.JIANG, ChongKWAK, Byung Sung, Leo
    • JIANG, ChongKWAK, Byung Sung, Leo
    • H01M14/00
    • C23C14/0676C23C14/08C23C14/5826C23C14/586
    • A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers.
    • 沉积电介质薄膜的方法可以包括:沉积介电薄层; 阻止介电层的沉积,如果需要则改变腔中的气体; 在衬底附近诱导和维持等离子体,以提供沉积的电介质层的离子轰击; 并重复沉积,停止和引导和维持步骤,直到沉积所需的电介质厚度。 该方法的变型可以包括:代替重复步骤:沉积较厚质量的电介质层; 沉积一层高质量的电介质; 阻止介电层的沉积,如果需要则改变腔中的气体; 以及在衬底附近诱导和维持等离子体,以提供沉积的电介质层的离子轰击。 电介质的厚层可以比薄层更快地沉积。