专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US09024299B2 Method for fabricating a dual work function semiconductor device and the device made thereof 有权
标题翻译：双功能半导体器件的制造方法及其制造方法
公开(公告)号：US09024299B2
公开(公告)日：2015-05-05
申请号：US12578439
申请日：2009-10-13
申请人： Zilan Li , Joshua Tseng , Thomas Witters , Stefan De Gendt
发明人： Zilan Li , Joshua Tseng , Thomas Witters , Stefan De Gendt
IPC分类号： H01L21/8234 , H01L21/8238 , H01L21/28 , H01L29/66 , H01L29/49 , H01L29/51 , H01L29/78
CPC分类号： H01L21/823842 , H01L21/28229 , H01L21/823857 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/785
摘要： A method for manufacturing a dual work function semiconductor device and the device made thereof are disclosed. In one aspect, a method includes providing a gate dielectric layer over a semiconductor substrate. The method further includes forming a metal layer over the gate dielectric layer. The method further includes forming a layer of gate filling material over the metal layer. The method further includes patterning the gate dielectric layer, the metal layer and the gate filling layer to form a first and a second gate stack. The method further includes removing the gate filling material only from the second gate stack thereby exposing the underlying metal layer. The method further includes converting the exposed metal layer into an metal oxide layer. The method further includes reforming the second gate stack with another gate filling material.
摘要翻译：公开了一种制造双功能半导体器件的方法及其制造的器件。一方面，一种方法包括在半导体衬底上提供栅介质层。该方法还包括在栅介电层上形成金属层。该方法还包括在金属层上形成栅极填充材料层。该方法还包括图案化栅极介电层，金属层和栅极填充层以形成第一和第二栅极叠层。该方法还包括仅从第二栅极堆叠去除栅极填充材料，从而暴露下面的金属层。该方法还包括将暴露的金属层转变成金属氧化物层。该方法还包括用另一种栅极填充材料重新构造第二栅极堆叠。

12. 发明申请

US20090094371A1 CONNECTION FORWARDING 有权
标题翻译：连接前进
公开(公告)号：US20090094371A1
公开(公告)日：2009-04-09
申请号：US12331257
申请日：2008-12-09
申请人： Kand Ly , Joshua Tseng , Steve McCanne
发明人： Kand Ly , Joshua Tseng , Steve McCanne
IPC分类号： G06F15/16
CPC分类号： H04L67/14 , H04L67/2814 , H04L67/2876
摘要： Two or more network traffic processors connected with the same LAN and WAN are identified as neighbors. Neighboring network traffic processors cooperate to overcome asymmetric routing, thereby ensuring that related sequences of network traffic are processed by the same network proxy. A network proxy can be included in a network traffic processor or as a standalone unit. A network traffic processor that intercepts a new connection initiation by a client assigns a network proxy to handle all messages associated with that connection. The network traffic processor conveys connection information to neighboring network traffic processors. The neighboring network traffic processors use the connection information to redirect network traffic associated with the connection to the assigned network proxy, thereby overcoming the effects of asymmetric routing. The assigned network proxy handles redirected network traffic in much the same way that it would handle network traffic received directly.
摘要翻译：与同一LAN和WAN连接的两个或多个网络流量处理器被识别为邻居。相邻的网络流量处理器合作克服非对称路由，从而确保相同的网络流量的相关序列被相同的网络代理处理。网络代理可以包含在网络流量处理器中或独立的单元中。拦截客户端的新连接启动的网络流量处理器分配网络代理来处理与该连接相关联的所有消息。网络流量处理器将连接信息传递给相邻网络流量处理器。相邻网络流量处理器使用连接信息将与连接相关联的网络流量重定向到所分配的网络代理，从而克服非对称路由的影响。分配的网络代理以与处理直接接收的网络流量大致相同的方式处理重定向的网络流量。

13. 发明申请

US20060248194A1 Connection forwarding 审中-公开
公开(公告)号：US20060248194A1
公开(公告)日：2006-11-02
申请号：US11377906
申请日：2006-03-15
申请人： Kand Ly , Joshua Tseng , Steve McCanne
发明人： Kand Ly , Joshua Tseng , Steve McCanne
IPC分类号： G06F15/173
CPC分类号： H04L67/14 , H04L67/2814 , H04L67/2876
摘要： Two or more network traffic processors connected with the same LAN and WAN are identified as neighbors. Neighboring network traffic processors cooperate to overcome asymmetric routing, thereby ensuring that related sequences of network traffic are processed by the same network proxy. A network proxy can be included in a network traffic processor or as a standalone unit. A network traffic processor that intercepts a new connection initiation by a client assigns a network proxy to handle all messages associated with that connection. The network traffic processor conveys connection information to neighboring network traffic processors. The neighboring network traffic processors use the connection information to redirect network traffic associated with the connection to the assigned network proxy, thereby overcoming the effects of asymmetric routing. The assigned network proxy handles redirected network traffic in much the same way that it would handle network traffic received directly.

14. 发明授权

US08384195B2 Nanochannel device and method for manufacturing thereof 有权
标题翻译：纳米通道装置及其制造方法
公开(公告)号：US08384195B2
公开(公告)日：2013-02-26
申请号：US13100537
申请日：2011-05-04
申请人： Gang Wang , Joshua Tseng , Roger Loo
发明人： Gang Wang , Joshua Tseng , Roger Loo
IPC分类号： H01L29/06
CPC分类号： B82Y15/00 , B01L3/502707 , B01L2300/0636 , B01L2300/0645 , B01L2300/0896 , B82Y40/00 , H01L21/02381 , H01L21/0243 , H01L21/02433 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/02639 , H01L21/764
摘要： The present disclosure relates to a device comprising a mono-crystalline substrate, the mono-crystalline substrate having at least one recessed region which exposes predetermined crystallographic planes of the mono-crystalline substrate, the at least one recessed region further having a recess width and comprising a filling material and an embedded nanochannel, wherein the width, the shape, and the depth of the embedded nanochannel is determined by the recess width of the at least one recessed region and by the growth rate of the growth front of the filling material in a direction perpendicular to the exposed predetermined crystallographic planes. The present disclosure is also related to a method for manufacturing a nanochannel device.
摘要翻译：本公开涉及一种包括单晶衬底的器件，所述单晶衬底具有暴露所述单晶衬底的预定晶面的至少一个凹陷区域，所述至少一个凹陷区域还具有凹陷宽度并且包括填充材料和嵌入式纳米通道，其中嵌入的纳米通道的宽度，形状和深度由所述至少一个凹陷区域的凹陷宽度和填充材料的生长前沿的生长速率决定方向垂直于暴露的预定结晶平面。本公开还涉及一种用于制造纳米通道装置的方法。

15. 发明申请

US20120166661A1 CONNECTION FORWARDING 有权
标题翻译：连接前进
公开(公告)号：US20120166661A1
公开(公告)日：2012-06-28
申请号：US13410032
申请日：2012-03-01
申请人： Kand Ly , Joshua Tseng , Steven McCanne
发明人： Kand Ly , Joshua Tseng , Steven McCanne
IPC分类号： G06F15/16
CPC分类号： H04L67/14 , H04L67/2814 , H04L67/2876
摘要： Two or more network traffic processors connected with the same LAN and WAN are identified as neighbors. Neighboring network traffic processors cooperate to overcome asymmetric routing, thereby ensuring that related sequences of network traffic are processed by the same network proxy. A network proxy can be included in a network traffic processor or as a standalone unit. A network traffic processor that intercepts a new connection initiation by a client assigns a network proxy to handle all messages associated with that connection. The network traffic processor conveys connection information to neighboring network traffic processors. The neighboring network traffic processors use the connection information to redirect network traffic associated with the connection to the assigned network proxy, thereby overcoming the effects of asymmetric routing. The assigned network proxy handles redirected network traffic in much the same way that it would handle network traffic received directly.
摘要翻译：与同一LAN和WAN连接的两个或多个网络流量处理器被识别为邻居。相邻的网络流量处理器合作克服非对称路由，从而确保相同的网络流量的相关序列被相同的网络代理处理。网络代理可以包含在网络流量处理器中或独立的单元中。拦截客户端的新连接启动的网络流量处理器分配网络代理来处理与该连接相关联的所有消息。网络流量处理器将连接信息传递给相邻网络流量处理器。相邻网络流量处理器使用连接信息将与连接相关联的网络流量重定向到所分配的网络代理，从而克服非对称路由的影响。分配的网络代理以与处理直接接收的网络流量大致相同的方式处理重定向的网络流量。

16. 发明申请

US20110272789A1 Nanochannel Device and Method for Manufacturing Thereof 有权
标题翻译：纳米通道器件及其制造方法
公开(公告)号：US20110272789A1
公开(公告)日：2011-11-10
申请号：US13100537
申请日：2011-05-04
申请人： Gang Wang , Joshua Tseng , Roger Loo
发明人： Gang Wang , Joshua Tseng , Roger Loo
IPC分类号： H01L29/04 , H01L21/20 , B82Y99/00 , B82Y40/00
CPC分类号： B82Y15/00 , B01L3/502707 , B01L2300/0636 , B01L2300/0645 , B01L2300/0896 , B82Y40/00 , H01L21/02381 , H01L21/0243 , H01L21/02433 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/02639 , H01L21/764
摘要： The present disclosure relates to a device comprising a mono-crystalline substrate, the mono-crystalline substrate having at least one recessed region which exposes predetermined crystallographic planes of the mono-crystalline substrate, the at least one recessed region further having a recess width and comprising a filling material and an embedded nanochannel, wherein the width, the shape, and the depth of the embedded nanochannel is determined by the recess width of the at least one recessed region and by the growth rate of the growth front of the filling material in a direction perpendicular to the exposed predetermined crystallographic planes. The present disclosure is also related to a method for manufacturing a nanochannel device.
摘要翻译：本公开涉及一种包括单晶衬底的器件，所述单晶衬底具有暴露所述单晶衬底的预定晶面的至少一个凹陷区域，所述至少一个凹陷区域还具有凹陷宽度并且包括填充材料和嵌入式纳米通道，其中嵌入的纳米通道的宽度，形状和深度由所述至少一个凹陷区域的凹陷宽度和填充材料的生长前沿的生长速率决定方向垂直于暴露的预定结晶平面。本公开还涉及一种用于制造纳米通道装置的方法。

17. 发明申请

US20100109095A1 METHOD FOR FABRICATING A DUAL WORK FUNCTION SEMICONDUCTOR DEVICE AND THE DEVICE MADE THEREOF 有权
标题翻译：制造双功能半导体器件及其器件的方法
公开(公告)号：US20100109095A1
公开(公告)日：2010-05-06
申请号：US12578439
申请日：2009-10-13
申请人： Zilan Li , Joshua Tseng , Thomas Witters , Stefan De Gendt
发明人： Zilan Li , Joshua Tseng , Thomas Witters , Stefan De Gendt
IPC分类号： H01L27/088 , H01L21/8234 , H01L21/28
CPC分类号： H01L21/823842 , H01L21/28229 , H01L21/823857 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/785
摘要： A method for manufacturing a dual work function semiconductor device and the device made thereof are disclosed. In one aspect, a method includes providing a gate dielectric layer over a semiconductor substrate. The method further includes forming a metal layer over the gate dielectric layer. The method further includes forming a layer of gate filling material over the metal layer. The method further includes patterning the gate dielectric layer, the metal layer and the gate filling layer to form a first and a second gate stack. The method further includes removing the gate filling material only from the second gate stack thereby exposing the underlying metal layer. The method further includes converting the exposed metal layer into an metal oxide layer. The method further includes reforming the second gate stack with another gate filling material.
摘要翻译：公开了一种制造双功能半导体器件的方法及其制造的器件。一方面，一种方法包括在半导体衬底上提供栅介质层。该方法还包括在栅介电层上形成金属层。该方法还包括在金属层上形成栅极填充材料层。该方法还包括图案化栅极介电层，金属层和栅极填充层以形成第一和第二栅极叠层。该方法还包括仅从第二栅极堆叠去除栅极填充材料，从而暴露下面的金属层。该方法还包括将暴露的金属层转变成金属氧化物层。该方法还包括用另一种栅极填充材料重新构造第二栅极堆叠。

18. 发明授权

US07387973B2 Method for improving low-K dielectrics by supercritical fluid treatments 有权
标题翻译：通过超临界流体处理改善低K电介质的方法
公开(公告)号：US07387973B2
公开(公告)日：2008-06-17
申请号：US10956640
申请日：2004-09-30
申请人： Ching-Ya Wang , Joshua Tseng , Henry Lo
发明人： Ching-Ya Wang , Joshua Tseng , Henry Lo
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76826 , H01L21/76807 , H01L21/76814 , H01L21/76877
摘要： A method for treating an inter-metal dielectric (IMD) layer to improve a mechanical strength and/or repair plasma etching damage including providing a low-K silicon oxide containing dielectric insulating layer; and carrying out a super critical fluid treatment of the low-K dielectric insulating layer including supercritical CO2 and a solvent including a silicon bond forming substituent having a bonding energy greater than a Si—H to replace at least a portion of the Si—H bonds with the silicon bond forming substituent.
摘要翻译：一种用于处理金属间电介质（IMD）层以改善机械强度和/或修复等离子体蚀刻损伤的方法，包括提供含有低K氧化硅的介电绝缘层; 并对包括超临界CO 2的低K电介质绝缘层进行超临界流体处理，并且包括具有大于Si-H的键合能力的形成硅键的取代基的溶剂至少替代一部分Si-H与形成硅键的取代基键合。

19. 发明授权

US07544606B2 Method to implement stress free polishing 有权
标题翻译：实施无压力抛光的方法
公开(公告)号：US07544606B2
公开(公告)日：2009-06-09
申请号：US11142215
申请日：2005-06-01
申请人： Jean Wang , Chia-Ming Yang , Henry Lo , Joshua Tseng
发明人： Jean Wang , Chia-Ming Yang , Henry Lo , Joshua Tseng
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/02068 , H01L21/32115 , H01L21/7684 , H01L21/76877
摘要： A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar surface over the low-k dielectric layer using spin-on method, and stress free polishing the metal layer. Preferably, the metal layer comprises copper or copper alloys. The metal layer preferably includes a first sub layer having a substantially non-planar surface and a second sub layer having a substantially planar surface on the first sub layer.
摘要翻译：提供了一种在低k电介质层中形成金属特征的方法。该方法包括在低k电介质层中形成开口，使用旋转方法在低k电介质层上形成具有基本平坦表面的金属层，并且对金属层进行无应力的研磨。优选地，金属层包括铜或铜合金。金属层优选地包括具有基本非平面表面的第一子层和在第一子层上具有基本平坦表面的第二子层。

20. 发明申请

US20070241455A1 Method for forming dual damascenes with supercritical fluid treatments 有权
标题翻译：用超临界流体处理形成双重大马士革的方法
公开(公告)号：US20070241455A1
公开(公告)日：2007-10-18
申请号：US11240965
申请日：2005-09-30
申请人： Ching-Ya Wang , Joshua Tseng , Henry Lo , Jean Wang
发明人： Ching-Ya Wang , Joshua Tseng , Henry Lo , Jean Wang
IPC分类号： H01L23/48
CPC分类号： H01L23/53238 , H01L21/02063 , H01L21/02101 , H01L21/3105 , H01L21/31058 , H01L21/31133 , H01L21/76808 , H01L21/76814 , H01L21/76831 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10S438/963 , H01L2924/00
摘要： A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprising an uppermost photoresist layer and an opening extending through a thickness of an inter-metal dielectric (IMD) layer to expose an underlying metal region; and, carrying out at least one supercritical fluid treatment comprising supercritical CO2, a first co-solvent, and an additive selected from the group consisting of a metal corrosion inhibitor and a metal anti-oxidation agent to remove the uppermost photoresist layer, as well as including an optional dielectric insulating layer bond forming agent.
摘要翻译：一种通过提供用于抗蚀剂灰化的单一工艺溶液来形成镶嵌结构的方法，同时避免和修复等离子体蚀刻损伤以及去除介电层中的吸收的水分，所述方法包括提供包括最上面的光致抗蚀剂层和延伸穿过的开口金属间电介质（IMD）层的厚度以暴露下面的金属区域; 并且进行至少一种超临界流体处理，其包括超临界CO 2，第一共溶剂和选自金属缓蚀剂和金属抗氧化剂的添加剂以除去最上面的光致抗蚀剂层，以及包括可选的介电绝缘层结合剂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式