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11. 发明授权

US08263795B2 Copper precursors for thin film deposition 有权
标题翻译：用于薄膜沉积的铜前体
公开(公告)号：US08263795B2
公开(公告)日：2012-09-11
申请号：US12258996
申请日：2008-10-27
申请人： John Anthony Thomas Norman , Melanie K. Perez
发明人： John Anthony Thomas Norman , Melanie K. Perez
IPC分类号： C07F7/10 , C07F1/08 , C23C16/00 , H01L29/12
CPC分类号： H01L21/28562 , C07F7/1804 , C23C16/18 , H01L21/28556
摘要： Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.
摘要翻译：本文描述了非氟化铜前体及其制备和使用方法。在某些实施方案中，本文所述的铜前体可用作通过例如原子层沉积或化学气相沉积条件将铜膜及其合金沉积在衬底上的前体。

12. 发明申请

US20110212629A1 LIQUID COMPOSITION CONTAINING AMINOETHER FOR DEPOSITION OF METAL-CONTAINING FILMS 有权
标题翻译：含有金属膜的含有氨基甲酸酯的液体组合物
公开(公告)号：US20110212629A1
公开(公告)日：2011-09-01
申请号：US12871284
申请日：2010-08-30
申请人： Sergei Vladimirovich Ivanov , Xinjian Lei , Daniel P. Spence , John Anthony Thomas Norman , Laura M. Matz
发明人： Sergei Vladimirovich Ivanov , Xinjian Lei , Daniel P. Spence , John Anthony Thomas Norman , Laura M. Matz
IPC分类号： H01L21/31 , C09D7/12
CPC分类号： C09D1/00 , C23C16/18 , C23C16/404 , C23C16/448
摘要： A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of β-diketonates, β-ketoiminates, β-ketoesterates, β-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R1R2NR3OR4NR5R6, R1OR4NR5R6, O(CH2CH2)2NR1, R1R2NR3N(CH2CH2)2O, R1R2NR3OR4N(CH2CH2)2O, O(CH2CH2)2NR1OR2N(CH2CH2)2O, and mixtures thereof, wherein R1-6 are independently selected from group consisting of C1-10 linear alkyl, C1-10 branched alkyl, C1-10 cyclic alkyl, C6-C10 aromatic, C1-10 alkylamine, C1-10 alkylaminoalkyl, C1-10 ether, C4-C10 cyclic ether, C4-C10 cyclic aminoether, and mixture thereof.
摘要翻译：一种制剂，其包含：a）至少一种金属 - 配体配合物，其中一个或多个配体选自由β-葡萄糖酮酮，酮基酮，酮基酯，β-二亚胺，烷基，羰基，烷基羰基，环戊二烯基，吡咯啉，烷氧基，脒基，咪唑并及其混合物; 金属选自元素周期表第2〜16族元素; 和（b）至少一种选自下组的氨基醚：R1R2NR3OR4NR5R6，R1OR4NR5R6，O（CH2CH2）2NR1，R1R2NR3N，CH2R2，其中R1-6独立地选自C1-10直链烷基，C1-10支链烷基，C1-10环烷基，C6-C10芳族，C1-10烷基胺，C1-10烷基氨基烷基，C1-10醚，C4 -C 10环醚，C 4 -C 10环氨基醚及其混合物。

13. 发明申请

US20100038785A1 Materials for Adhesion Enhancement of Copper Film on Diffusion Barriers 失效
标题翻译：铜膜在扩散壁上的粘附增强材料
公开(公告)号：US20100038785A1
公开(公告)日：2010-02-18
申请号：US12192603
申请日：2008-08-15
申请人： Hansong Cheng , Xinjian Lei , Daniel P. Spence , John Anthony Thomas Norman , David Allen Roberts , Bo Han , Chenggang Zhou , Jinping Wu
发明人： Hansong Cheng , Xinjian Lei , Daniel P. Spence , John Anthony Thomas Norman , David Allen Roberts , Bo Han , Chenggang Zhou , Jinping Wu
IPC分类号： H01L23/52 , H01L21/44
CPC分类号： H01L21/76846
摘要： We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium.
摘要翻译：我们使用最先进的计算化学技术来鉴别提供铜种子层对粘合促进层和粘附促进层对阻挡层的良好粘附性的粘附促进层材料。我们已经确定了在各种金属表面上提供铜层的良好附着力以及发生铜膜附聚的情况的因素。已经预测了几种基于铬合金的有希望的粘合促进层材料能够显着增强铜膜的粘附性。已经鉴定了多齿和重铬酸盐的含铬络合物是含铬的前体，以使铬合金形成。

14. 发明申请

US20090114874A1 Copper Precursors for Thin Film Deposition 有权
标题翻译：用于薄膜沉积的铜前体
公开(公告)号：US20090114874A1
公开(公告)日：2009-05-07
申请号：US12258996
申请日：2008-10-27
申请人： John Anthony Thomas Norman , Melanie K. Perez
发明人： John Anthony Thomas Norman , Melanie K. Perez
IPC分类号： H01L29/12 , C07F1/08 , B05D5/12
CPC分类号： H01L21/28562 , C07F7/1804 , C23C16/18 , H01L21/28556
摘要： Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.
摘要翻译：本文描述了非氟化铜前体及其制备和使用方法。在某些实施方案中，本文所述的铜前体可用作通过例如原子层沉积或化学气相沉积条件将铜膜及其合金沉积在衬底上的前体。

15. 发明授权

US07524533B2 Diffusion barrier layers and processes for depositing metal films thereupon by CVD or ALD processes 失效
标题翻译：扩散阻挡层和通过CVD或ALD工艺沉积金属膜的方法
公开(公告)号：US07524533B2
公开(公告)日：2009-04-28
申请号：US10820864
申请日：2004-04-09
申请人： Diwakar Garg , Hansong Cheng , John Anthony Thomas Norman , Eduardo Machado , Pablo Ordejon
发明人： Diwakar Garg , Hansong Cheng , John Anthony Thomas Norman , Eduardo Machado , Pablo Ordejon
IPC分类号： B05D1/36 , C23C16/30 , H05H1/24
CPC分类号： H01L21/76843 , C23C14/58 , C23C14/5846 , H01L21/28556 , H01L21/3205 , H01L21/32051 , H01L21/76856 , H01L21/76876
摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the surface of the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, and mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.
摘要翻译：描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。在一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。在某些实施方案中，扩散阻挡层的表面可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，含硅，碳和氮的化合物及其混合物。本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。

16. 发明申请

US20080305268A1 Low Temperature Thermal Conductive Inks 有权
标题翻译：低温导热油墨
公开(公告)号：US20080305268A1
公开(公告)日：2008-12-11
申请号：US12126333
申请日：2008-05-23
申请人： John Anthony Thomas Norman , Melanie K. Perez , Robert Krantz Pinschmidt, JR.
发明人： John Anthony Thomas Norman , Melanie K. Perez , Robert Krantz Pinschmidt, JR.
IPC分类号： B05D3/02 , C09D5/00
CPC分类号： H05K3/105 , C09D11/30 , H05K3/125 , H05K2203/013 , H05K2203/1105 , H05K2203/121
摘要： Novel copper alkoxide compound based ink formulations and their chemical syntheses are disclosed. The method of using the ink formulations to print conducting copper metal lines with standard ink jet printing and curing at
摘要翻译：公开了新的烷基酚化合物基油墨配方及其化学合成。还公开了使用油墨配方在<150℃下用标准喷墨印刷和固化印刷导电铜金属线的方法。

17. 发明授权

US06846515B2 Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants 有权
标题翻译：使用致孔剂和/或孔隙化前体来提供具有低介电常数的多孔有机硅玻璃膜的方法
公开(公告)号：US06846515B2
公开(公告)日：2005-01-25
申请号：US10150798
申请日：2002-05-17
申请人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
发明人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
IPC分类号： C23C16/40
CPC分类号： C23C16/401
摘要： A method for providing a porous organosilica glass (OSG) film that consists of a single phase of a material represented by the formula SivOwCxHyFz, v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6 is disclosed herein. In one aspect of the present invention, the film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or alternatively bonded to, the precursors. The porogens are subsequently removed to provide the porous film. In another aspect of the present invention, porogenated precursors are used for providing the film.
摘要翻译：一种提供由式SivOwCxHyFz，v + w + x + y + z = 100％表示的材料的单相组成的多孔有机硅玻璃（OSG）膜的方法，v为10〜35原子％，w 为10〜65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中膜的孔隙和介电常数小于2.6 。在本发明的一个方面中，通过化学气相沉积方法提供膜，其中从有机硅烷和/或有机硅氧烷前体和成孔剂（孔隙原）沉积预备膜，其可以独立于或替代地键合前体。随后除去致孔剂以提供多孔膜。在本发明的另一方面，使用致孔前体来提供该膜。

18. 发明授权

US06552209B1 Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films 有权
标题翻译：金属氧化物和金属氮化物薄膜的金属亚氨基/氨基络合物的制备
公开(公告)号：US06552209B1
公开(公告)日：2003-04-22
申请号：US10179818
申请日：2002-06-24
申请人： Xinjian Lei , John Anthony Thomas Norman
发明人： Xinjian Lei , John Anthony Thomas Norman
IPC分类号： C07F900
CPC分类号： C07F9/005
摘要： This invention relates to an improved process to produce metal imino/amino complexes having the formula R1N=M(NR2R3)3 where M is a pentavalent metal or (R1N=)2M′(NR2R3)2 where M′ is a hexavalent metal. In the process MX5 and two-equivalents of primary amine R1NH2 or metal hexahalide, M′X6 with seven-equivalents of primary amine H2NR1 are reacted in the presence of excess pyridine. The resulting reaction product R1N═MX3(py)2 or [(R1N)2M′X2(py)]2 then is followed by the addition of LiNR2R3. The process provides the final product in high yield and in high purity as well as representing a simplified procedure for synthesizing R1N═M(NR2 R3)3 or (R1N═)2M′(NR2R3)2type complexes.
摘要翻译：本发明涉及制备具有式R 1 N = M（NR 2 R 3）3的金属亚氨基/氨基络合物的改进方法，其中M是五价金属或（R1N =）2M'（NR2R3）2，其中M'是六价金属。在该方法中，MX5和2当量的伯胺R 1 NH 2或金属六氢化物，具有7当量伯胺H 2 N R 1的M'X 6在过量的吡啶的存在下反应。得到的反应产物R1N = MX3（py）2或[（R1N）2M'X2（py）] 2然后加入LiNR2R3。该方法以高产率和高纯度提供最终产物，以及代表合成R1N = M（NR2 R3）3或（R1N =）2M'（NR2R3）2型络合物的简化程序。

19. 发明授权

US06537613B1 Process for metal metalloid oxides and nitrides with compositional gradients 失效
标题翻译：具有组成梯度的金属准金属氧化物和氮化物的工艺
公开(公告)号：US06537613B1
公开(公告)日：2003-03-25
申请号：US09546867
申请日：2000-04-10
申请人： Yoshihide Senzaki , Arthur Kenneth Hochberg , John Anthony Thomas Norman
发明人： Yoshihide Senzaki , Arthur Kenneth Hochberg , John Anthony Thomas Norman
IPC分类号： C23C1606
CPC分类号： C23C16/52 , C23C16/029
摘要： A process for deposition of a multiple metal and metalloid compound layer with a compositional gradient of the metal and metalloid in the layer on a substrate of an electronic material, comprising: a) providing two or more metal-ligand and metalloid-ligand complex precursors, wherein the ligands are preferably the same; b) delivering the precursors to a deposition zone where the substrate is located; c) contacting the substrate under deposition conditions with the precursors; d) varying the temperature of deposition from a first temperature to a second distinct temperature which is at least 40° C. from said first temperature during the contact, and e) depositing a multiple metal and metalloid compound layer on the substrate from the precursors resulting in the compositional gradient of the metal and metalloid in the layer as a result of step d). An oxygen source can be added to result in a metal-metalloid oxide, or a nitrogen source can be added to result in a metal-metalloid nitride, or a mixture of an oxygen and a nitrogen source can be added to result in a metal-metalloid oxynitride. The metalloid would preferably be silicon.
摘要翻译：一种用于在电子材料的基底上的层中沉积具有金属和准金属的组成梯度的多金属和准金属化合物层的方法，包括：a）提供两种或更多种金属 - 配体和准金属 - 配体复合物前体，其中配体优选相同; b）将前体输送到基底所在的沉积区; c）在沉积条件下将基材与前体接触; d）在接触期间将沉积温度从第一温度变化到与所述第一温度至少40℃的第二不同温度，以及e）从所述前体沉积多个金属和准金属化合物层到所述衬底上，在层中的金属和准金属的组成梯度中作为步骤d）的结果。可以加入氧源以产生金属 - 类金属氧化物，或者可以加入氮源以产生金属 - 准金属氮化物，或者可以加入氧和氮源的混合物以产生金属 - 准金属氧氮化物准金属将优选为硅。

20. 发明授权

US06319567B1 Synthesis of tantalum nitride 失效
标题翻译：氮化钽的合成
公开(公告)号：US06319567B1
公开(公告)日：2001-11-20
申请号：US09281616
申请日：1999-03-30
申请人： Yoshihide Senzaki , Arthur Kenneth Hochberg , John Anthony Thomas Norman
发明人： Yoshihide Senzaki , Arthur Kenneth Hochberg , John Anthony Thomas Norman
IPC分类号： C23C1634
CPC分类号： C23C16/4481 , C23C16/34
摘要： A method for producing a tantalum nitride layer on a substrate, comprising; directly injecting a liquid mixture of (R1R2N)3Ta(═NR3) and (R4R5N)3Ta[&eegr;2—R6N═C (R7)(R8)] into a dispersing zone followed by delivering the dispersed mixture into a reactor containing the substrate at elevated temperature and reacting the mixture with a source of nitrogen selected from the group consisting of ammonia, alkyl amines, N2H2, alkyl hydrazine, N2 and mixtures thereof, to produce the tantalum nitride layer on the substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually C1-6 alkyl, aryl or hydrogen.
摘要翻译：一种在基板上制造氮化钽层的方法，包括：将（R1R2N）3Ta（= NR3）和（R4R5N）3Ta-R6N = C（R7）（R8）]的液体混合物直接注入到分散区中，然后将分散的混合物输送到含有底物的反应器中，温度并使混合物与选自氨，烷基胺，N 2 H 2，烷基肼，N 2及其混合物的氮源反应，以在衬底上产生氮化钽层，其中R1，R2，R3，R4， R 5，R 6，R 7和R 8分别是C 1-6烷基，芳基或氢。

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