专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20130234297A1 SEMICONDUCTOR DEVICE, WAFER ASSEMBLY AND METHODS OF MANUFACTURING WAFER ASSEMBLIES AND SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件，波导组件和制造波导组件和半导体器件的方法
公开(公告)号：US20130234297A1
公开(公告)日：2013-09-12
申请号：US13415340
申请日：2012-03-08
申请人： Alexander Breymesser , Andre Brockmeier , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze , Carsten von Koblinski , Gerhard Schmidt
发明人： Alexander Breymesser , Andre Brockmeier , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze , Carsten von Koblinski , Gerhard Schmidt
IPC分类号： H01L29/06 , H01L21/78
CPC分类号： H01L21/78 , H01L21/2007 , H01L21/56 , H01L21/76224 , H01L23/3178 , H01L23/564 , H01L29/7393 , H01L29/78 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A cavity is formed in a working surface of a substrate in which a semiconductor element is formed. A glass piece formed from a glass material is bonded to the substrate, and the cavity is filled with the glass material. For example, a pre-patterned glass piece is used which includes a protrusion fitting into the cavity. Cavities with widths of more than 10 micrometers are filled fast and reliably. The cavities may have inclined sidewalls.
摘要翻译：在其中形成半导体元件的基板的工作表面中形成空腔。将由玻璃材料形成的玻璃片接合到基板上，并且用玻璃材料填充空腔。例如，使用预先图案化的玻璃片，其包括配合到空腔中的突起。宽度大于10微米的腔体被快速可靠地填充。空腔可以具有倾斜的侧壁。

12. 发明申请

US20130175529A1 Semiconductor Diode and Method for Forming a Semiconductor Diode 审中-公开
标题翻译：半导体二极管和形成半导体二极管的方法
公开(公告)号：US20130175529A1
公开(公告)日：2013-07-11
申请号：US13347749
申请日：2012-01-11
申请人： Anton Mauder , Hans-Joachim Schulze , Philipp Seng
发明人： Anton Mauder , Hans-Joachim Schulze , Philipp Seng
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/456 , H01L29/0619 , H01L29/36 , H01L29/402 , H01L29/404 , H01L29/407 , H01L29/861
摘要： A semiconductor diode is provided. The semiconductor diode includes a monocrystalline silicon semiconductor body including a first semiconductor region of a first conductivity type extending to a first surface of the semiconductor body and having a first maximum doping concentration, and a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region. The semiconductor diode further includes a polycrystalline silicon semiconductor region of the first conductivity type having a second maximum doping concentration which is higher than the first maximum doping concentration and adjoining the first semiconductor region on the first surface, a first metallization arranged on the polycrystalline silicon semiconductor region and in electric contact with the polycrystalline semiconductor region, and an edge-termination structure arranged next to the first semiconductor region. Further, a method for producing a semiconductor diode is provided.
摘要翻译：提供半导体二极管。半导体二极管包括单晶硅半导体本体，其包括延伸到半导体本体的第一表面并具有第一最大掺杂浓度的第一导电类型的第一半导体区域和形成第二导电类型的第二导电类型的第二半导体区域，与第一半导体区域的连接。半导体二极管还包括第一导电类型的多晶硅半导体区域，其具有高于第一最大掺杂浓度的第二最大掺杂浓度并与第一表面上的第一半导体区相邻，布置在多晶硅半导体上的第一金属化层区域并与多晶半导体区域电接触，以及边缘端接结构，其布置在第一半导体区域的旁边。此外，提供了一种用于制造半导体二极管的方法。

13. 发明授权

US08466046B2 Method for fabricating a porous semiconductor body region 有权
标题翻译：多孔半导体体区域的制造方法
公开(公告)号：US08466046B2
公开(公告)日：2013-06-18
申请号：US13407728
申请日：2012-02-28
申请人： Hans-Joachim Schulze , Anton Mauder , Francisco Javier Santos Rodriguez
发明人： Hans-Joachim Schulze , Anton Mauder , Francisco Javier Santos Rodriguez
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02658 , H01L21/76202 , H01L21/76224 , H01L29/8611 , Y10T428/218
摘要： A method may include producing at least one trench in a semiconductor body, starting from a surface of the semiconductor body, then producing at least one porous semiconductor body region in the semiconductor body starting from the at least one trench at least along a portion of the side walls of the trench, and then filling the trench with a semiconductor material of the semiconductor body.
摘要翻译：一种方法可以包括从半导体本体的表面开始产生半导体本体中的至少一个沟槽，然后至少沿着半导体本体的一部分从至少一个沟槽起始在半导体本体中产生至少一个多孔半导体本体区域沟槽的侧壁，然后用半导体本体的半导体材料填充沟槽。

14. 发明授权

US08415710B2 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method 有权
标题翻译：双极性功率半导体元件包括p型发射极和p型发射极中较高掺杂的区域，以及制造方法
公开(公告)号：US08415710B2
公开(公告)日：2013-04-09
申请号：US13022386
申请日：2011-02-07
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/66363 , H01L29/7428
摘要： A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping.
摘要翻译：配置为IGBT的双极性功率半导体元件包括半导体本体，其中p掺杂发射极，n掺杂基极，p掺杂基极和n掺杂主发射极在垂直方向上连续布置。 p掺杂发射极具有多个具有局部增加的p型掺杂的高p掺杂区。

15. 发明申请

US20130065379A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130065379A1
公开(公告)日：2013-03-14
申请号：US13229861
申请日：2011-09-12
申请人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
发明人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
IPC分类号： H01L21/20
CPC分类号： H01L21/3223 , H01L21/02378 , H01L21/02381 , H01L21/02505 , H01L21/02513 , H01L21/02664 , H01L21/0475 , H01L21/26506 , H01L21/324 , H01L21/3247 , H01L29/1608
摘要： A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment.
摘要翻译：一种制造半导体器件的方法包括形成半导体本体的多孔区域。半导体本体在多孔区域中包括多孔结构。在多孔区域上形成半导体层。在半导体层中形成半导体区域。然后，半导体层沿着多孔区域与半导体本体分离，包括通过热处理将氢引入多孔区域。

16. 发明申请

US20130049203A1 Semiconductor Device with Buried Electrode 有权
标题翻译：带埋地电极的半导体器件
公开(公告)号：US20130049203A1
公开(公告)日：2013-02-28
申请号：US13220284
申请日：2011-08-29
申请人： Carsten Ahrens , Johannes Baumgartl , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze
发明人： Carsten Ahrens , Johannes Baumgartl , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze
IPC分类号： H01L23/498 , H01L21/283
CPC分类号： H01L29/41 , H01L21/28 , H01L21/743 , H01L23/535 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the semiconductor substrate and forming the buried electrode below the active device region in the cavity. The buried electrode is formed from an electrically conductive material different than the material of the semiconductor substrate.
摘要翻译：通过在半导体衬底内形成空腔来制造具有埋电极的半导体器件，在设置在半导体衬底上的外延层中形成有源器件区域，并在空腔中的有源器件区域下方形成埋置电极。掩埋电极由不同于半导体衬底的材料的导电材料形成。

17. 发明授权

US08378384B2 Wafer and method for producing a wafer 有权
标题翻译：晶片及其制造方法
公开(公告)号：US08378384B2
公开(公告)日：2013-02-19
申请号：US11864584
申请日：2007-09-28
申请人： Hans-Joachim Schulze , Hans-Joerg Timme , Helmut Strack
发明人： Hans-Joachim Schulze , Hans-Joerg Timme , Helmut Strack
IPC分类号： H01L29/66 , H01L31/102
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3221 , Y10T428/2495 , Y10T428/26
摘要： A wafer includes a wafer frontside surface and a region adjacent to the wafer frontside surface. The region includes oxygen precipitates and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property.
摘要翻译：晶片包括晶片前侧表面和与晶片前侧表面相邻的区域。该区域包括氧沉淀物，并且晶片正面包括预定的表面结构以在其上形成具有所需性质的器件。

18. 发明授权

US08349646B2 Semiconductor wafer for semiconductor components and production method 有权
标题翻译：半导体晶圆半导体元件及生产方法
公开(公告)号：US08349646B2
公开(公告)日：2013-01-08
申请号：US12949332
申请日：2010-11-18
申请人： Hans-Joachim Schulze
发明人： Hans-Joachim Schulze
IPC分类号： H01L21/322 , H01L21/06
CPC分类号： H01L21/3225 , H01L21/2254 , H01L21/26506
摘要： A semiconductor wafer for semiconductor components and to a method for its production is disclosed. In one embodiment, the semiconductor wafer includes a front side with an adjoining near-surface active zone as basic material for semiconductor component structures. The rear side of the semiconductor wafer is adjoined by a getter zone for gettering impurity atoms in the semiconductor wafer. The getter zone contains oxygen precipitates. In the near-surface active zone, atoms of doping material are located on lattice vacancies. The atoms of doping material have a higher diffusion coefficient that the oxygen atoms.
摘要翻译：公开了一种用于半导体部件的半导体晶片及其制造方法。在一个实施例中，半导体晶片包括具有邻近的近表面活性区的前侧，作为半导体元件结构的基本材料。半导体晶片的后侧与用于吸收半导体晶片中的杂质原子的吸气区相邻。吸气区包含氧沉淀。在近表面活性区，掺杂材料的原子位于晶格空位上。掺杂原子具有较高的扩散系数，即氧原子。

19. 发明申请

US20130001640A1 SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE 有权
标题翻译：具有浮动半导体区域的半导体器件
公开(公告)号：US20130001640A1
公开(公告)日：2013-01-03
申请号：US13610240
申请日：2012-09-11
申请人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
发明人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
IPC分类号： H01L29/739
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
摘要翻译：半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性。通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。

20. 发明申请

US20120292773A1 Method for Producing a Metal Layer on a Substrate and Device 有权
标题翻译：在基板和器件上生成金属层的方法
公开(公告)号：US20120292773A1
公开(公告)日：2012-11-22
申请号：US13110653
申请日：2011-05-18
申请人： Khalil Hosseini , Hans-Joachim Schulze
发明人： Khalil Hosseini , Hans-Joachim Schulze
IPC分类号： H01L23/52 , H01L21/768 , H01L23/532 , H01L21/78
CPC分类号： C23C4/005 , C23C4/01 , C23C4/08 , C23C4/134 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/741 , H01L24/743 , H01L24/83 , H01L24/85 , H01L2224/03332 , H01L2224/03442 , H01L2224/04026 , H01L2224/04042 , H01L2224/05824 , H01L2224/05847 , H01L2224/05939 , H01L2224/05944 , H01L2224/05966 , H01L2224/05979 , H01L2224/0598 , H01L2224/05981 , H01L2224/0603 , H01L2224/27442 , H01L2224/29082 , H01L2224/292 , H01L2224/29324 , H01L2224/29347 , H01L2224/29439 , H01L2224/29444 , H01L2224/29466 , H01L2224/29479 , H01L2224/2948 , H01L2224/29481 , H01L2224/32245 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/73265 , H01L2224/83191 , H01L2224/83801 , H01L2224/8382 , H01L2224/85 , H01L2224/85181 , H01L2224/85205 , H01L2224/85207 , H01L2224/85801 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/48 , H01L2224/45099 , H01L2224/83205 , H01L2924/00012
摘要： A method produces a metal layer on a semiconductor substrate. A metal layer is produced on the semiconductor substrate by depositing metal particles. The metal particles include cores made of a first metal material and shells surrounding the cores. The shells are made of a second metal material that is resistant to oxidation.
摘要翻译：一种方法在半导体衬底上产生金属层。通过沉积金属颗粒在半导体衬底上产生金属层。金属颗粒包括由第一金属材料制成的芯和围绕芯的壳。壳体由耐氧化的第二金属材料制成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式