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11. 发明申请

US20100210052A1 THIN FILM TRANSISTOR PANEL, LIQUID CRYSTAL DISPLAY HAVING THE SAME AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR PANEL 审中-公开
标题翻译：薄膜晶体管板，液晶显示器及制造薄膜晶体管板的方法
公开(公告)号：US20100210052A1
公开(公告)日：2010-08-19
申请号：US12771773
申请日：2010-04-30
申请人： Jang-soo KIM
发明人： Jang-soo KIM
IPC分类号： H01L33/44 , H01L33/00
CPC分类号： G02F1/136209 , G02F1/136227 , G02F2001/136222
摘要： A thin film transistor panel, a liquid crystal display having the same, and a method of manufacturing the thin film transistor panel are provided. The thin film transistor includes a gate line formed on an insulating substrate in a predetermined direction, a data line crossing the gate line, a thin film transistor connected to the gate line and the data line, a black matrix formed to overlap at least a portion of the gate line, the data line, and the thin film transistor, a color filter formed in a region partitioned by the black matrix, and a pixel electrode formed on the color filter and electrically connected to the thin film transistor.
摘要翻译：提供薄膜晶体管面板，具有该薄膜晶体管面板的液晶显示器以及制造薄膜晶体管面板的方法。薄膜晶体管包括在预定方向上形成在绝缘基板上的栅极线，与栅极线交叉的数据线，连接到栅极线和数据线的薄膜晶体管，形成为与至少一部分栅极线，数据线和薄膜晶体管，形成在由黑矩阵划分的区域中的滤色器和形成在滤色器上并电连接到薄膜晶体管的像素电极。

12. 发明授权

US07777858B2 Liquid crystal display apparatus and method of forming the same 失效
标题翻译：液晶显示装置及其形成方法
公开(公告)号：US07777858B2
公开(公告)日：2010-08-17
申请号：US11556468
申请日：2006-11-03
申请人： Young-Hoon Yoo , Jang-Soo Kim , Hye-Young Ryu
发明人： Young-Hoon Yoo , Jang-Soo Kim , Hye-Young Ryu
IPC分类号： G02F1/1339
CPC分类号： G02F1/1339 , G02F1/133516 , G02F1/1345
摘要： A liquid crystal display device including a first substrate, a common electrode formed over the first substrate, and a second substrate disposed opposite the first substrate. A common voltage-applying member applies a common voltage to the common electrode and maintains a cell gap between the first substrate and the second substrate. The common voltage-applying member includes an insulator and a conductor formed over the insulator.
摘要翻译：一种液晶显示装置，包括第一基板，形成在第一基板上的公共电极以及与第一基板相对设置的第二基板。公共电压施加部件向公共电极施加公共电压，并且在第一基板和第二基板之间保持单元间隙。公共电压施加构件包括绝缘体和形成在绝缘体上的导体。

13. 发明申请

US20100203715A1 THIN FILM TRANSISTOR ARRAY PANEL AND FABRICATION 有权
标题翻译：薄膜晶体管阵列和制造
公开(公告)号：US20100203715A1
公开(公告)日：2010-08-12
申请号：US12765698
申请日：2010-04-22
申请人： Sang-Gab KIM , Woo-Geun Lee , Shi-Yul Kim , Jin-Ho Ju , Jang-Soo Kim , Sang-Woo Whangbo , Min-Seok Oh , Hye-Young Ryu , Hong-Kee Chin
发明人： Sang-Gab KIM , Woo-Geun Lee , Shi-Yul Kim , Jin-Ho Ju , Jang-Soo Kim , Sang-Woo Whangbo , Min-Seok Oh , Hye-Young Ryu , Hong-Kee Chin
IPC分类号： H01L21/28
CPC分类号： H01L27/124 , G02F2001/13629 , H01L29/458
摘要： The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.
摘要翻译：本发明提供一种薄膜晶体管阵列面板的制造方法，其包括在基板上形成栅极线; 在栅极线上形成栅极绝缘层，半导体层和欧姆接触; 形成包括Mo的第一导电膜，包括Al的第二导电膜和在欧姆接触上包含Mo的第三导电膜; 在所述第三导电膜上形成第一光致抗蚀剂图案; 使用第一光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜，欧姆接触和半导体层; 将第一光致抗蚀剂图案去除预定厚度以形成第二光致抗蚀剂图案; 使用第二光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜以暴露欧姆接触的一部分; 并使用含Cl气体和含F气体蚀刻暴露的欧姆接触。

14. 发明授权

US07759738B2 Array substrate and method of manufacturing the same 有权
标题翻译：阵列基板及其制造方法
公开(公告)号：US07759738B2
公开(公告)日：2010-07-20
申请号：US12269748
申请日：2008-11-12
申请人： Jang-Soo Kim , Hong-Long Ning , Bong-Kyun Kim , Hong-Sick Park , Shi-Yul Kim , Chang-Oh Jeong , Sang-Gab Kim , Jae-Hyoung Youn , Woo-Geun Lee , Yang-Ho Bae , Pil-Sang Yun , Jong-Hyun Choung , Sun-Young Hong , Ki-Won Kim , Byeong-Jin Lee , Young-Wook Lee , Jong-In Kim , Byeong-Beom Kim , Nam-Seok Suh
发明人： Jang-Soo Kim , Hong-Long Ning , Bong-Kyun Kim , Hong-Sick Park , Shi-Yul Kim , Chang-Oh Jeong , Sang-Gab Kim , Jae-Hyoung Youn , Woo-Geun Lee , Yang-Ho Bae , Pil-Sang Yun , Jong-Hyun Choung , Sun-Young Hong , Ki-Won Kim , Byeong-Jin Lee , Young-Wook Lee , Jong-In Kim , Byeong-Beom Kim , Nam-Seok Suh
IPC分类号： H01L29/04 , H01L29/10 , H01L29/15
CPC分类号： G02F1/13458 , G02F1/136286 , G02F2001/136295 , H01L27/1218 , H01L27/124 , H01L27/1288
摘要： A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.
摘要翻译：栅极线包括形成在基底基板上的第一籽晶层和形成在第一籽晶层上的第一金属层。在基底基板上形成第一绝缘层。在基底基板上形成第二绝缘层。这里，在与栅极线交叉的方向上通过第二绝缘层形成线沟槽。数据线包括形成在线沟槽下方的第二晶种层和形成在线沟槽中的第二金属层。像素电极形成在基底基板的像素区域中。因此，使用绝缘层形成预定深度的沟槽，并且通过电镀方法形成金属层，从而可以形成具有足够厚度的金属线。

15. 发明授权

US07738059B2 Thin film transistor panel having passivation layer overlapping TFT with color filter and black matrix formed on passivation layer where black matrix partitions color filter 有权
标题翻译：具有钝化层的薄膜晶体管面板与彩色滤光片重叠TFT，黑色矩阵形成在钝化层上，黑色矩阵分割为彩色滤光片
公开(公告)号：US07738059B2
公开(公告)日：2010-06-15
申请号：US11395433
申请日：2006-03-30
申请人： Jang-soo Kim
发明人： Jang-soo Kim
IPC分类号： G02F1/1333
CPC分类号： G02F1/136209 , G02F1/136227 , G02F2001/136222
摘要： A thin film transistor panel, a liquid crystal display having the same, and a method of manufacturing the thin film transistor panel are provided. The thin film transistor includes a gate line formed on an insulating substrate in a predetermined direction, a data line crossing the gate line, a thin film transistor connected to the gate line and the data line, a black matrix formed to overlap at least a portion of the gate line, the data line, and the thin film transistor, a color filter formed in a region partitioned by the black matrix, and a pixel electrode formed on the color filter and electrically connected to the thin film transistor.
摘要翻译：提供薄膜晶体管面板，具有该薄膜晶体管面板的液晶显示器以及制造薄膜晶体管面板的方法。薄膜晶体管包括在预定方向上形成在绝缘基板上的栅极线，与栅极线交叉的数据线，连接到栅极线和数据线的薄膜晶体管，形成为与至少一部分栅极线，数据线和薄膜晶体管，形成在由黑矩阵划分的区域中的滤色器和形成在滤色器上并电连接到薄膜晶体管的像素电极。

16. 发明申请

US20100033646A1 THIN FILM TRANSISTOR DISPLAY PANEL, LIQUID CRYSTAL DISPLAY HAVING THE SAME, AND METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY 有权
标题翻译：薄膜晶体管显示面板，具有该液晶显示面板的液晶显示器以及制造液晶显示器的方法
公开(公告)号：US20100033646A1
公开(公告)日：2010-02-11
申请号：US12421115
申请日：2009-04-09
申请人： Seung-Soo BAEK , Seong-Young LEE , Dong-Gyu KIM , Jang-Soo KIM
发明人： Seung-Soo BAEK , Seong-Young LEE , Dong-Gyu KIM , Jang-Soo KIM
IPC分类号： G02F1/136 , H01L33/00 , H01L21/28
CPC分类号： G02F1/1345 , G02F1/136209
摘要： A thin film transistor (“TFT”) array panel includes; a substrate including a display and peripheral area, a display area signal line and a display area TFT disposed in the display area, the display area TFT connected to the display area signal line, a plurality of peripheral area signal lines, a light blocking member disposed on the display area signal line, the display area TFT, and the peripheral area signal lines, a transparent connector connecting one of peripheral area signal lines and another one of the peripheral area signal lines through a contact hole passing through the light blocking member, a pixel electrode connected to the display area TFT, a spacer disposed on a layer above the light blocking member, and a light blocking assistance member composed of the same material as the spacer on the transparent connector, the light blocking assistance member covering at least the contact hole.
摘要翻译：薄膜晶体管（“TFT”）阵列面板包括：包括显示器和外围区域的基板，显示区域信号线和设置在显示区域中的显示区域TFT，连接到显示区域信号线的显示区域TFT，多个外围区域信号线，显示区域信号线，显示区域TFT和外围区域信号线，通过穿过遮光构件的接触孔连接外围区域信号线和外围区域信号线中的一个的透明连接器，连接到显示区域TFT的像素电极，设置在遮光构件上方的层的隔离物和由与透明连接器上的间隔物相同的材料构成的遮光辅助构件，遮光辅助构件至少覆盖接触部孔。

17. 发明申请

US20090166635A1 ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：阵列基板及其制造方法
公开(公告)号：US20090166635A1
公开(公告)日：2009-07-02
申请号：US12273661
申请日：2008-11-19
申请人： Jang-Soo KIM , Jae-Hyoung YOUN
发明人： Jang-Soo KIM , Jae-Hyoung YOUN
IPC分类号： H01L29/06 , H01L21/02
CPC分类号： H01L27/1218 , H01L27/124 , H01L27/1248
摘要： An array substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (“TFT”) and a pixel electrode. The gate line includes a gate covering line formed in a first direction on the base substrate and a gate main line protruded from the gate covering line. The gate insulation layer is formed on the base substrate to cover the gate line. The data line is formed on the gate insulation layer in a second direction crossing the first direction. The TFT is electrically connected to the gate line and the data line. The pixel electrode is electrically connected to the TFT. Therefore, a gate line is thicker than a gate covering line and a gate main line having a low resistance is further formed, so that a gate signal may be quickly transferred along the gate line without a signal delay.
摘要翻译：阵列基板包括基底基板，栅极线，栅极绝缘层，数据线，薄膜晶体管（“TFT”）和像素电极。栅极线包括在基底基板上沿第一方向形成的栅极覆盖线和从栅极覆盖线突出的栅极主线。栅极绝缘层形成在基底基板上以覆盖栅极线。数据线沿与第一方向交叉的第二方向形成在栅极绝缘层上。 TFT与栅极线和数据线电连接。像素电极电连接到TFT。因此，栅极线比栅极覆盖线厚，并且进一步形成具有低电阻的栅极主线，使得栅极信号可以沿着栅极线快速传输而没有信号延迟。

18. 发明申请

US20090152635A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL 有权
标题翻译：薄膜晶体管和制造显示面板的方法
公开(公告)号：US20090152635A1
公开(公告)日：2009-06-18
申请号：US12331361
申请日：2008-12-09
申请人： Yu-Gwang JEONG , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang JEONG , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L29/78 , H01L21/02
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

19. 发明授权

US07515233B2 Liquid crystal display having dual pattern protrusions formed on an electrode 有权
标题翻译：具有在电极上形成的双重图案突起的液晶显示器
公开(公告)号：US07515233B2
公开(公告)日：2009-04-07
申请号：US11094147
申请日：2005-03-31
申请人： Jang-Soo Kim , Min-Hyung Choo
发明人： Jang-Soo Kim , Min-Hyung Choo
IPC分类号： G02F1/1337 , G02F1/1339
CPC分类号： G02F1/1393 , G02F1/1337 , G02F2001/133776
摘要： “A liquid crystal display of the present invention comprises a first substrate, a second substrate and a liquid crystal layer injected there between. The first substrate has first base plate, a gate line formed on the first base plate, a data line formed over the gate line, a switching element electrically connected to the gate line and the data line, a pixel electrode electrically connected to the switching element, an element dividing LC domains formed on the pixel electrode, first alignment layer formed on the domain dividing element. The second substrate comprises second base plate, a common electrode formed on the second base plate, a first protrusion and a second protrusion formed on the common electrode. The first protrusion and the second protrusion have different heights. A second alignment layer is formed on the protrusions.”
摘要翻译： “本发明的液晶显示器包括第一基板，第二基板和在其间注入的液晶层，第一基板具有第一基板，形成在第一基板上的栅极线，形成在第一基板上的数据线栅极线，与栅极线和数据线电连接的开关元件，与开关元件电连接的像素电极，形成在像素电极上的分离LC畴的元件，形成在畴分割元件上的第一取向层，第二基板包括第二基板，形成在第二基板上的公共电极，形成在公共电极上的第一突起和第二突起，第一突起和第二突起具有不同的高度，第二取向层形成在突起上。 “

20. 发明授权

US07501297B2 Thin film transistor array panel and manufacturing method thereof 失效
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07501297B2
公开(公告)日：2009-03-10
申请号：US11336087
申请日：2006-01-20
申请人： Jang-Soo Kim , Soo-Jin Kim , Kyoung-Tai Han , Hee-Hwan Choe , Joo-Han Kim
发明人： Jang-Soo Kim , Soo-Jin Kim , Kyoung-Tai Han , Hee-Hwan Choe , Joo-Han Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , G02F1/136213 , G02F1/136227 , G02F2001/136236 , H01L27/1214 , H01L27/124 , H01L27/14692
摘要： A method of manufacturing a thin film transistor array panel is provided, The method includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming a data line and a drain electrode on the semiconductor layer; depositing a passivation layer on the data line and the drain electrode; forming a photoresist including a first portion and a second portion thinner than the first portion on the passivation layer; etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode at least in part; removing the second portion of the photoresist; depositing a conductive film; and removing the photoresist to form a pixel electrode on the exposed portion of the drain electrode.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法。该方法包括：在基板上形成栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层; 在半导体层上形成数据线和漏电极; 在数据线和漏电极上沉积钝化层; 在所述钝化层上形成包含比所述第一部分薄的第一部分和第二部分的光致抗蚀剂; 使用所述光致抗蚀剂作为掩模蚀刻所述钝化层，以至少部分地暴露所述漏电极的一部分; 去除光致抗蚀剂的第二部分; 沉积导电膜; 并且去除光致抗蚀剂以在漏电极的暴露部分上形成像素电极。

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