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11. 发明授权

US09068277B2 Apparatus for manufacturing single-crystal silicon carbide 有权
标题翻译：单晶碳化硅制造装置
公开(公告)号：US09068277B2
公开(公告)日：2015-06-30
申请号：US12416500
申请日：2009-04-01
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
IPC分类号： C30B23/00 , C30B29/36 , C30B35/00 , C30B23/06
CPC分类号： C30B29/36 , C30B23/00 , C30B23/066 , C30B35/00 , Y10T117/1068
摘要： The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.
摘要翻译：本发明提供了一种用于稳定地制造质量好的单晶碳化硅而不形成裂纹等的装置，该装置包括：至少一个用于容纳碳化硅原料粉末和晶种的坩埚; 隔热材料安装在坩埚周围; 以及用于加热坩埚的加热装置，其中坩埚的外部轮廓包括至少一个比垂直相邻区域更窄直径的区域，绝缘材料也安装在留有直径差的空间中，绝缘材料的厚度在较窄直径区域处，比垂直相邻区域处的绝缘材料大。用于制造单晶碳化硅的装置能够精确地控制坩埚内的温度梯度，从而能够制造出优质的单晶碳化硅。

12. 发明授权

US08901570B2 Epitaxial silicon carbide single crystal substrate and process for producing the same 有权
标题翻译：外延碳化硅单晶基板及其制造方法
公开(公告)号：US08901570B2
公开(公告)日：2014-12-02
申请号：US13697211
申请日：2011-05-10
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L29/15 , H01L31/0312 , H01L21/02 , C30B25/02 , C30B29/36 , C30B25/18
CPC分类号： H01L21/02433 , C30B25/02 , C30B25/18 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02507 , H01L21/02529 , H01L21/02573 , H01L21/0262
摘要： Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 μm or less and a non-dope layer that is 0.1 μm or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.
摘要翻译：提供了一种外延碳化硅单晶衬底，其中具有优异的掺杂密度的面内均匀性的碳化硅外延膜设置在具有在1°至6°之间的偏离角的碳化硅单晶衬底上。通过重复0.5μm以下的掺杂层和0.1μm以下的非掺杂层来生长外延膜。该原料气体中碳原子数与硅原子数之比（C / Si比）为1.5〜2.0的掺杂层形成，非掺杂层形成为C / Si比为 0.5以上但小于1.5。得到的外延碳化硅单晶衬底在具有小偏角的碳化硅单晶衬底上包括具有优异的掺杂密度的面内均匀性的高质量碳化硅外延膜。

13. 发明申请

US20130049014A1 EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：外延硅碳化物单晶基板及其制造方法
公开(公告)号：US20130049014A1
公开(公告)日：2013-02-28
申请号：US13697211
申请日：2011-05-10
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L29/16 , C30B25/16
CPC分类号： H01L21/02433 , C30B25/02 , C30B25/18 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02507 , H01L21/02529 , H01L21/02573 , H01L21/0262
摘要： Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 μm or less and a non-dope layer that is 0.1 μm or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.
摘要翻译：提供了一种外延碳化硅单晶衬底，其中具有优异的掺杂密度的面内均匀性的碳化硅外延膜设置在具有在1°至6°之间的偏离角的碳化硅单晶衬底上。通过重复0.5μm以下的掺杂层和0.1μm以下的非掺杂层来生长外延膜。该原料气体中碳原子数与硅原子数之比（C / Si比）为1.5〜2.0的掺杂层形成，非掺杂层形成为C / Si比为 0.5以上但小于1.5。得到的外延碳化硅单晶衬底在具有小偏角的碳化硅单晶衬底上包括具有优异的掺杂密度的面内均匀性的高质量碳化硅外延膜。

14. 发明申请

US20130029158A1 PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE OBTAINED BY THE SAME 有权
标题翻译：单晶硅基碳化硅单晶及其异相碳化硅单晶基板的制造方法
公开(公告)号：US20130029158A1
公开(公告)日：2013-01-31
申请号：US13639309
申请日：2011-04-07
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： C30B25/16 , B32B9/04
CPC分类号： H01L21/02378 , C30B25/10 , C30B29/36 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02661
摘要： Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T0) and a set growth temperature (T2) which are respectively lower and higher than a growth temperature (T1) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.
摘要翻译：公开了通过化学气相沉积在单晶碳化硅衬底上外延生长碳化硅膜来制造外延单晶碳化硅衬底的工艺。该方法中的晶体生长步骤包括主要占据外延生长期的主晶体生长步骤和二次晶体生长步骤，其中生长温度在设定生长温度（T0）和设定生长温度（T2）分别低于和高于在主晶体生长步骤中使用的生长温度（T1）。抑制单晶碳化硅衬底的基面位错转移到外延膜。因此，形成高质量的外延膜。

15. 发明申请

US20110308449A1 CRUCIBLE FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE, AND PRODUCTION APPARATUS AND PRODUCTION METHOD FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE 有权
标题翻译：用于生产单晶碳化硅的生产方法和用于生产单晶碳化硅的生产装置和生产方法
公开(公告)号：US20110308449A1
公开(公告)日：2011-12-22
申请号：US13138526
申请日：2010-02-25
申请人： Masakazu Katsuno , Tatsuo Fujimoto , Hiroshi Tsuge , Masashi Nakabayashi
发明人： Masakazu Katsuno , Tatsuo Fujimoto , Hiroshi Tsuge , Masashi Nakabayashi
IPC分类号： C30B23/02 , C30B35/00
CPC分类号： C30B29/36 , C30B23/005 , H01L21/02378 , H01L21/02433 , H01L21/02529 , Y10T117/10
摘要： The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a production apparatus for single-crystal silicon carbide equipped with such a crucible and a production method for single-crystal silicon carbide utilizing this apparatus.
摘要翻译：提供一种用于制造单晶碳化硅的坩埚的本发明以及能够以高产率稳定地生长结晶度良好的单晶碳化硅锭的单晶碳化硅的制造装置和制造方法是用于生产具有用于保持碳化硅原料的坩埚容器和用于附着晶种的坩埚盖的单晶碳化硅的坩埚，并且适于使坩埚容器中的碳化硅原料升华以提供碳化硅升华气体在连接到坩埚盖上的籽晶上生长晶种上的单晶碳化硅，在坩埚容器中设置用于制造单晶碳化硅的坩埚，并将具有螺纹部的坩埚盖螺纹连接在一起具有能够通过相对旋转来调节流速的升华气体排出槽或沟槽加入部分并且是配备有这种坩埚的单晶碳化硅的制造装置和利用该装置的单晶碳化硅的制造方法。

16. 发明申请

US20100289033A1 SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SUBSTRATE AND EPITAXIAL WAFER OBTAINED THEREFROM 有权
标题翻译：单晶硅碳化硅，基板和外延晶体管
公开(公告)号：US20100289033A1
公开(公告)日：2010-11-18
申请号：US12735405
申请日：2009-01-14
申请人： Noboru Ohtani , Masakazu Katsuno , Hiroshi Tsuge , Masashi Nakabayashi , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Hiroshi Tsuge , Masashi Nakabayashi , Tatsuo Fujimoto
IPC分类号： H01L29/24 , B32B5/00 , B32B3/00 , C01B31/36
CPC分类号： H01L21/0262 , C30B23/00 , C30B23/002 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/0254 , H01L21/02634 , H01L21/046 , H01L21/0495 , H01L29/6606 , Y10T428/24355
摘要： The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom.It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm−3 to 6×1020 cm3 and acceptor-type impurity at a concentration of 1×1018 cm−3 to 5.99×1020 cm−3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm−3 to 5.99×1020 cm−3, and a substrate and epitaxial wafer obtained therefrom.
摘要翻译：本发明提供能够提供低位错缺陷的优质基板的单晶碳化硅锭，以及从其获得的基板和外延晶片。是含有浓度为2×1018 cm -3〜6×1020cm 3的供体型杂质的浓度为1×1018 cm -1的受主型杂质的单晶碳化硅单晶碳化硅锭， 3〜5.99×1020cm-3，其中供体型杂质的浓度大于受主型杂质的浓度，差为1×1018cm-3〜5.99×1020cm-3，基板和由其获得的外延晶片。

17. 发明授权

US06770991B2 Roll connector structure for a vehicle 失效
标题翻译：车辆的滚动连接器结构
公开(公告)号：US06770991B2
公开(公告)日：2004-08-03
申请号：US09752444
申请日：2001-01-03
申请人： Keisuke Imai , Hiroshi Tsuge
发明人： Keisuke Imai , Hiroshi Tsuge
IPC分类号： H02K1100
CPC分类号： B60R16/027 , B60Q1/1469
摘要： In order to provide a roll connector structure for a vehicle in which there is no complicated or complex wiring in the steering wheel and the space within the steering wheel can be utilized efficiently, a roll connector structure for a vehicle including a stator side casing which is fixed to a steering column, a rotor side casing which is mounted to the stator side casing and rotates integrally with a steering wheel, and a cable which is accommodated between the stator side casing and the rotor side casing, wherein at least one steering switch is connected to the rotor side casing without wiring, is provided.
摘要翻译：为了提供一种在方向盘中没有复杂或复杂布线的车辆的滚动连接器结构，并且可以有效地利用方向盘内的空间，一种用于车辆的滚动连接器结构，其包括定子侧壳体固定到转向柱，安装到定子侧壳体并与方向盘一体旋转的转子侧壳体和容纳在定子侧壳体和转子侧壳体之间的电缆，其中至少一个转向开关是连接到转子侧壳体而没有布线。

18. 发明授权

US06621176B1 Input device for use in vehicles for inputting settings pertaining to driver's intention of acceleration and deceleration 有权
标题翻译：用于车辆输入与驾驶员加速和减速意图有关的设置的输入装置
公开(公告)号：US06621176B1
公开(公告)日：2003-09-16
申请号：US09649968
申请日：2000-08-28
申请人： Chikao Nagasaka , Yoshihiro Ohkura , Hiroshi Tsuge , Toru Nakamura
发明人： Chikao Nagasaka , Yoshihiro Ohkura , Hiroshi Tsuge , Toru Nakamura
IPC分类号： B60L100
CPC分类号： F16H59/0204 , B60K20/06 , B60K26/00 , B60K31/042 , F16H2059/0239 , F16H2059/0247 , Y10T74/20067
摘要： An input device for use in a vehicle for inputting settings pertaining to a driver's intention of acceleration and deceleration includes a running mode selection switch and an acceleration/deceleration switch. A plurality of modes, for example, a manual speed change mode, an automatic speed change mode, a speed setting mode, and a distance-between-cars setting mode, are selectively set in the running mode selection switch. The acceleration/deceleration switch allows an accelerating or decelerating operation in correspondence to the selected mode. Operation switches which have been conventionally provided separately for each of functions are integrated into two parts, that is, the running mode selection switch and the acceleration/deceleration switch. After a desired mode has been selected, a desired function can be realized only by operation corresponding to a driver's intention of acceleration or deceleration. Accordingly, even if the driver is not experienced in using a plurality of functions, more reasonable operation suited for human perception and reaction allows the driver to become easily accustomed to use the device.
摘要翻译：用于车辆中用于输入关于驾驶员的加速和减速意图的设置的输入装置包括行驶模式选择开关和加速/减速开关。在运行模式选择开关中选择性地设置多种模式，例如手动变速模式，自动变速模式，速度设定模式和轿厢间距离设定模式。加速/减速开关允许对应于所选模式的加速或减速操作。通常为每个功能单独提供的操作开关集成在两个部分中，即行驶模式选择开关和加速/减速开关。在选择了期望的模式之后，可以仅通过对应于驾驶员的加速或减速的意图的操作来实现期望的功能。因此，即使驾驶员在使用多种功能方面没有经验，适合于人的感知和反应的更合理的操作使驾驶员变得容易地习惯使用该装置。

19. 发明授权

US4438949A Automatically fastening seatbelt system 失效
标题翻译：自动固定安全带系统
公开(公告)号：US4438949A
公开(公告)日：1984-03-27
申请号：US309509
申请日：1981-10-07
申请人： Hiroshi Tsuge , Mitsuaki Katsuno , Yuji Nishimura , Tatsushi Kubota , Tadao Yamada , Yoshihiro Hayashi
发明人： Hiroshi Tsuge , Mitsuaki Katsuno , Yuji Nishimura , Tatsushi Kubota , Tadao Yamada , Yoshihiro Hayashi
IPC分类号： B60N2/42 , B60N2/90 , B60R22/06 , B60R21/10
CPC分类号： B60R22/06
摘要： Automatically fastening seatbelt system, wherein an anchor plate engaged with one of restraining webbings is connected through a support device to a driving force transmitting member and made movable along a guide rail, whereby the webbings are automatically fastened to an occupant, a release device is provided at a predetermined position in the longitudinal direction of the guide rail, and the operation of the support device is released by the operation of the release device to release the anchor plate from the guide rail.
摘要翻译：自动紧固安全带系统，其中与限制网中的一个接合的锚板通过支撑装置连接到驱动力传递构件并且可沿着导轨移动，由此将带状物自动紧固到乘员身上，提供释放装置在导轨的纵向方向上的预定位置处，并且通过释放装置的操作来释放支撑装置的操作以将锚板从导轨释放。

20. 发明授权

US4387790A Webbing locking device 失效
标题翻译：织带锁定装置
公开(公告)号：US4387790A
公开(公告)日：1983-06-14
申请号：US243695
申请日：1981-03-16
申请人： Jun Yasumatsu , Hiroshi Tsuge , Takashi Kawaharazaki
发明人： Jun Yasumatsu , Hiroshi Tsuge , Takashi Kawaharazaki
IPC分类号： B60R22/42 , A62B35/00
CPC分类号： B60R22/42
摘要： A webbing locking device for clamping the intermediate portion of an occupant restraining portion by means of a pair of friction members provided on a frame and a lock lever, respectively, in an emergency of a vehicle, including a roller, around which the intermediate portion of the webbing is guided. This roller smoothly guides the webbing by use of holding means during normal running condition of a vehicle, however, in an emergency of the vehicle, moves in the radial direction thereof to come into contact with frictional contact means to thereby be subjected to a friction resistance, whereby a tension in the webbing in the clamped portion is reduced, so that the webbing in the clamped portion can avoid breakage.
摘要翻译：一种安全带锁定装置，用于通过在包括辊子的车辆的紧急情况下分别设置在框架和锁定杆上的一对摩擦构件夹紧乘员约束部分的中间部分，引导织带。该滚子在车辆的正常行驶状态下通过使用保持装置平滑地引导织带，然而，在车辆的紧急情况下，其在径向方向上移动以与摩擦接触装置接触从而受到摩擦阻力由此，夹紧部分中的织带中的张力减小，使得夹紧部分中的织带可以避免破损。

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