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11. 发明授权

US06359312B1 Semiconductor device with SOI structure 有权
标题翻译：具有SOI结构的半导体器件
公开(公告)号：US06359312B1
公开(公告)日：2002-03-19
申请号：US09631942
申请日：2000-08-03
申请人： Hiroshi Komatsu
发明人： Hiroshi Komatsu
IPC分类号： H01L2701
CPC分类号： H01L29/66772 , H01L21/84 , H01L27/1203 , H01L29/78636 , H01L29/78648
摘要： Disclosed is a semiconductor device including a SOI substrate having a SOI layer, in which a structure made from a semiconductor device is buried; a thick oxide film formed on the structure by selectively oxidizing the structure using as a mask an oxidation preventive film formed both on the SOI layer and on a region in which a contact reaching the structure is to be formed; an interlayer dielectric film formed on the structure, the SOI layer and the thick oxide film; and a plurality of connection holes formed in the interlayer dielectric film and including at least a connection hole positioned on the region in which the contact is to be formed. With this semiconductor device, a contact reaching a back gate electrode can be formed without increasing an aspect ratio of the contact even when a thick oxide film is grown on the back gate electrode in the filed area by selectively oxidizing the back gate electrode in the field area.
摘要翻译：公开了一种半导体器件，其包括：SOI基板，其具有SOI层，其中埋设由半导体器件制成的结构; 通过在SOI层上形成的氧化膜和在形成与其结合的区域的区域上形成防氧化膜，通过选择性地氧化该结构而形成在该结构上的厚氧化膜; 在该结构上形成的层间电介质膜，SOI层和厚氧化膜; 以及形成在所述层间电介质膜中并且至少包括位于要形成所述接触部的区域上的连接孔的多个连接孔。利用该半导体器件，即使当通过选择性地氧化场区中的背栅极电极而在场区中的背栅电极上生长厚氧化膜时，也可以形成到达后栅电极的接触，而不增加接触的纵横比区。

12. 发明授权

US6164759A Method for producing an electrostatic actuator and an inkjet head using it 失效
标题翻译：用于制造静电致动器和使用它的喷墨头的方法
公开(公告)号：US6164759A
公开(公告)日：2000-12-26
申请号：US369493
申请日：1999-08-05
申请人： Masahiro Fujii , Keiichi Mukaiyama , Hiroyuki Maruyama , Tadaaki Hagata , Yoshio Maeda , Hiroshi Komatsu , Mitsuro Atobe
发明人： Masahiro Fujii , Keiichi Mukaiyama , Hiroyuki Maruyama , Tadaaki Hagata , Yoshio Maeda , Hiroshi Komatsu , Mitsuro Atobe
IPC分类号： B41J2/14 , B41J2/16 , C04B37/04 , B41J2/04 , B21D53/00 , B41J2/045
CPC分类号： B41J2/16 , B41J2/14314 , B41J2/1623 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1645 , B41J2/1646 , B41J2002/14338 , B41J2202/11 , Y10T29/49401
摘要： A manufacturing method for a device having an electrostatic actuator for example inkjet head, whereby warping of the diaphragms does not occur as a result of anodic bonding is provided. The method comprises the steps of etching a first substrate on the first surface thereof to form a concave portion and a diaphragm provided in bottom walls of the concave portion, forming an electrode on a second substrate, and anodically bonding the second substrate to a second surface of the first substrate, opposite the first surface, such that the electrode is aligned adjacent to the diaphragm with a gap therebetween. The bonding temperature of the anodically bonding step is set within a temperature range whereby the contraction of the first substrate after bonding is equal to or greater than the contraction of the second substrate.
摘要翻译：具有静电致动器例如喷墨头的装置的制造方法，由此提供由于阳极结合而不会发生膜片翘曲。该方法包括以下步骤：在其第一表面上蚀刻第一衬底以形成凹部和设置在凹部的底壁中的隔膜，在第二衬底上形成电极，并将第二衬底阳极结合到第二表面的第一衬底，与第一表面相对，使得电极与隔膜相邻地对准，其间具有间隙。阳极结合步骤的接合温度设定在温度范围内，由此第一衬底在接合之后的收缩等于或大于第二衬底的收缩。

13. 发明授权

US6133979A Liquid crystal display device with internal heating element 失效
标题翻译：具有内部加热元件的液晶显示装置
公开(公告)号：US6133979A
公开(公告)日：2000-10-17
申请号：US936019
申请日：1997-09-23
申请人： Hiroshi Komatsu , Jong Wook Park
发明人： Hiroshi Komatsu , Jong Wook Park
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1335 , G02F1/13357 , G02F1/1343 , G02F1/1333
CPC分类号： G02F1/1336 , G02F1/133382 , G02F1/134363 , G02F2203/11
摘要： A liquid crystal display device Includes a liquid crystal panel having a first substrate, a second substrate, and a liquid crystal layer between the first and the second substrates. A first polarizer is on the first substrate and a second polarizer on the second substrate. A backlight produces light and a light guide plate adjacent the backlight guides the light from the backlight to the liquid crystal panel. A light diffusion plate is between the liquid crystal panel and the light guide plate. A temperature controlling member controls the temperature of the liquid crystal panel to be within a set range and the temperature controlling member is connected to the liquid crystal panel and the heating plate.
摘要翻译：液晶显示装置包括在第一和第二基板之间具有第一基板，第二基板和液晶层的液晶面板。第一偏振器在第一基板上，第二偏振器位于第二基板上。背光产生光，并且与背光相邻的导光板将来自背光的光引导到液晶面板。光漫射板在液晶面板和导光板之间。温度控制构件将液晶面板的温度控制在设定范围内，并且温度控制构件连接到液晶面板和加热板。

14. 外观设计

USD408844S Photocopier 失效
公开(公告)号：USD408844S
公开(公告)日：1999-04-27
申请号：US087826
申请日：1998-05-11
申请人： Hiroshi Komatsu
设计人： Hiroshi Komatsu

15. 外观设计

USD404063S Toner container for copying machine 失效
公开(公告)号：USD404063S
公开(公告)日：1999-01-12
申请号：US80159
申请日：1997-10-20
申请人： Hiroshi Komatsu , Ken Wakatsuki
设计人： Hiroshi Komatsu , Ken Wakatsuki

16. 外观设计

USD398334S Photocopier 失效
公开(公告)号：USD398334S
公开(公告)日：1998-09-15
申请号：US72554
申请日：1997-06-24
申请人： Hiroshi Komatsu
设计人： Hiroshi Komatsu

17. 发明授权

US5751107A Field-discharge fluorescent-display with fluorescent layer including glass 失效
标题翻译：具有包括玻璃的荧光层的场放电荧光显示器
公开(公告)号：US5751107A
公开(公告)日：1998-05-12
申请号：US560519
申请日：1995-11-17
申请人： Hiroshi Komatsu
发明人： Hiroshi Komatsu
IPC分类号： H01J29/08 , H01J1/62
CPC分类号： H01J29/085
摘要： A fluorescent display apparatus performs a desired display by, in a vacuum state, irradiating its fluorescent layer with electrons discharged from electric-field electron discharge devices. The fluorescent layer is formed by a fluorescent substance and low-fusing-point glass, serves as an adhesive agent for the fluorescent substance. Paste obtained by mixing, for example, fluorescent substance powder, low-fusing-point glass powder and a binder is applied to a substrate or the like, followed by sintering at a temperature higher than the fusing point of the low-fusing-point glass. Solder is used to seal the space in the apparatus. An exhaust port is placed on a frame in a vacuum chamber while making the exhaust port face downwards. Then, spherical solder disposed between the frame and the foregoing exhaust port is heated and melted to be injected into the exhaust port. In order to raise the degree of vacuum, getter material is formed on the inner surface of the foregoing space to have a thin film shape. The getter material is irradiated with laser beams to be vaporized and activated after air in the foregoing space has been exhausted and the space has been sealed up.
摘要翻译：荧光显示装置在真空状态下通过从电场放电装置放出的电子照射其荧光层来进行期望的显示。荧光层由荧光物质和低熔点玻璃形成，用作荧光物质的粘合剂。将通过混合例如荧光物质粉末，低熔点玻璃粉末和粘合剂获得的糊剂施加到基材等上，然后在比低熔点玻璃的熔点高的温度下烧结。焊料用于密封设备中的空间。将排气口放置在真空室中的框架上，同时使排气口朝下。然后，将设置在框架和前述排气口之间的球形焊料加热熔化，以将其注入排气口。为了提高真空度，在上述空间的内表面上形成吸气材料以具有薄膜形状。吸气剂材料用激光束照射，在上述空间中的空气已经排空并且空间已被密封之后被蒸发并活化。

18. 发明授权

US5654242A Method for making refractory metal silicide electrode 失效
$Method for making refractory metal silicide electrode$
标题翻译：难熔金属硅化物电极的制备方法
公开(公告)号：US5654242A
公开(公告)日：1997-08-05
申请号：US533017
申请日：1995-09-25
申请人： Hiroshi Komatsu
发明人： Hiroshi Komatsu
IPC分类号： H01L21/285 , H01L21/28 , H01L21/8238 , H01L27/092 , H01L29/78
CPC分类号： H01L21/28097 , H01L21/823835
摘要： A WSi.sub.x layer wherein the value of x as the stoichiometry of Si is not less than 2.7 and preferably not less than 3.0 is formed by LPCVD based upon reduction of SiCl.sub.2 H.sub.2 of WF.sub.6. Even if this WSi.sub.x film is used without an adhesion layer such as poly Si (polycide structure), it is excellent in adhesion with respect to an SiO.sub.2 film and provides a gate electrode capable of maintaining a satisfactory breakdown voltage value of a gate oxide film. If n-type and p-type impurities are ion-implanted into an nMOS forming region and a pMOS forming region of the WSi.sub.x layer and patterned, a gate electrode of a reduced thickness and a low resistance having a controlled work function may be formed for providing symmetrical threshold voltages.
摘要翻译：通过基于WF 6的SiCl 2 H 2的还原，通过LPCVD形成其中作为Si的化学计量的x的值不小于2.7并且优选不小于3.0的WSix层。即使该WSix膜在不具有多晶硅（polycide structure）等粘合层的情况下使用的情况下，相对于SiO 2膜也具有优异的粘附性，能够提供能够保持栅氧化膜的令人满意的击穿电压值的栅电极。如果将n型和p型杂质离子注入到构成WSix层的nMOS形成区域和pMOS形成区域并被图案化，则可以形成具有受控功函数的厚度减小的栅电极和具有受控功函数的低电阻提供对称的阈值电压。

19. 发明授权

US5286296A Multi-chamber wafer process equipment having plural, physically communicating transfer means 失效
标题翻译：具有多个物理通信传送装置的多室晶片处理设备
公开(公告)号：US5286296A
公开(公告)日：1994-02-15
申请号：US818535
申请日：1992-01-09
申请人： Junichi Sato , Toshiaki Hasegawa , Hiroshi Komatsu
发明人： Junichi Sato , Toshiaki Hasegawa , Hiroshi Komatsu
IPC分类号： C23C16/54 , H01L21/00 , H01L21/677 , C23C16/00 , A61K27/02
CPC分类号： H01L21/67167 , C23C16/54 , H01L21/67184 , H01L21/67196 , H01L21/67745
摘要： In a multi-chamber process equipment in which a plurality of process chambers for processing a single wafer are connected with a wafer transfer chamber in parallel through respective gate valves, and a wafer transfer means is provided for carrying the wafer between the wafer transfer chamber and each process chamber through one of the gate valves, there are further provided a plurality of vacuum pumps in order to prevent cross contamination among processes, improve throughput and prevent condensation in the process chambers. The vacuum pumps are connected with the wafer transfer chamber, and designed to reduce the pressure in the wafer transfer chamber to different vacuum levels. Therefore, the degree of vacuum in the wafer transfer chamber can be set at a desired value according to the process chamber to be opened, by operating the vacuum pumps properly, so that cross contamination between the wafer transfer chamber and the process chambers is prevented effectively.
摘要翻译：在用于处理单个晶片的多个处理室通过相应的闸阀与晶片传送室并联连接的多室工艺设备中，并且提供晶片传送装置，用于在晶片传送室和每个处理室通过一个闸阀，还提供多个真空泵，以防止工艺之间的交叉污染，提高生产量并防止处理室中的冷凝。真空泵与晶片传送室连接，并被设计成将晶片传送室中的压力降低到不同的真空度。因此，可以通过适当地操作真空泵，根据要打开的处理室将晶片传送室中的真空度设定为期望值，从而有效地防止晶片传送室与处理室之间的交叉污染。

20. 发明授权

US5228878A Field electron emission device production method 失效
标题翻译：场电子发射装置的生产方法
公开(公告)号：US5228878A
公开(公告)日：1993-07-20
申请号：US755938
申请日：1991-11-13
申请人： Hiroshi Komatsu
发明人： Hiroshi Komatsu
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02
CPC分类号： H01J3/022 , H01J1/3042 , H01J9/025 , H01J2201/30426 , H01J2201/319 , H01J2209/0226 , H01L2223/54473
摘要： A field emission device and method for manufacturing which comprises using a diffusion mask to preserve an area of a silicon substrate for use as a cathode while all around the cathode the substrate is being diffused with oxygen to form an insulating layer. And further comprising depositing a molybdenum gate electrode layer on the insulating layer and etching the molybdenum gate electrode layer such that the diffusion mask falls off and the insulating layer is dissolved around the cathode through the hole formed in the gate electrode layer by the diffusion mask being removed. The gate electrode openings are therefore automatically and independently self-aligned with their respective cathodes.
摘要翻译：一种场致发射器件及其制造方法，其包括使用扩散掩模来保留用于阴极的硅衬底的面积，同时所述衬底周围的所述衬底全部被氧扩散以形成绝缘层。并且还包括在所述绝缘层上沉积钼栅极层并蚀刻所述钼栅极层，使得所述扩散掩模脱落，并且所述绝缘层通过所述扩散掩模通过形成在所述栅电极层中的所述孔溶解在所述阴极周围删除。因此，栅电极开口自动且独立地与它们各自的阴极自对准。

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