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12. 发明授权

US5025165A Method for producing a semiconductor device using an electron beam exposure tool and apparatus for producing the device 失效
标题翻译：使用电子束曝光工具制造半导体器件的方法和用于制造该器件的装置
公开(公告)号：US5025165A
公开(公告)日：1991-06-18
申请号：US499153
申请日：1990-03-26
申请人： Chin-Chin Chen , Martin Feldman , Herbert A. Waggener
发明人： Chin-Chin Chen , Martin Feldman , Herbert A. Waggener
IPC分类号： H01L21/027 , G03F9/00 , H01J37/304
CPC分类号： G03F9/7049 , H01J37/3045
摘要： Conventional alignment procedures in electron beam (e-beam) direct write systems typically use an e-beam exposure tool as a scanning electron microscope (SEM) to imagine wafer alignment marks. However, electrical charging of the wafer surface by the electron beam can typically result in image distortions which generally can lead to alignment inaccuracies. The inventive method and apparatus advantageously overcome the alignment inaccuracies associated with the charging effects, by optically aligning the wafer to a reference axis of the electron beam. In a preferred embodiment of this invention, light is focused on a diffraction grating on the wafer, used as an alignment mark, and the diffracted light is spatially filtered and detected. Spatially filtering the diffracted light, eliminating the 0th order of the diffracted light, provides increased depth of focus. Also in this particular embodiment, travel of the wafer stage for optical alignment remains below the electron lens column by mounting an optical head (used for directing light onto the wafer, for spatially filtering the diffracted light, and for directing the spatially filtered light to the detection means) to the pole tip of the electron lens column. Significantly, the optical head comprises a lens section cut from a relatively larger lens providing a large working distance and numerical aperture without restricting movement, below the pole tip, of the wafer stage with a wafer mounted thereon.
摘要翻译：电子束（电子束）直接写入系统中的常规对准过程通常使用电子束曝光工具作为扫描电子显微镜（SEM）来想象晶片对准标记。然而，通过电子束对晶片表面的充电通常可能导致图像失真，这通常可能导致对准不准确。通过将晶片与电子束的参考轴光学对准，本发明的方法和装置有利地克服了与充电效应相关联的对准不准确性。在本发明的优选实施例中，光聚焦在晶片上的衍射光栅上，用作对准标记，衍射光被空间滤波和检测。对衍射光进行空间滤波，消除衍射光的第0级，提供增加的聚焦深度。同样在该特定实施例中，用于光学对准的晶片台的行程通过安装光学头（用于将光引导到晶片上，用于对衍射光进行空间滤波，并将空间过滤的光引导到检测装置）到电子透镜柱的极端。重要的是，光学头包括从相对较大的透镜切割的透镜部分，其提供大的工作距离和数值孔径，而不限制在安装在其上的晶片的晶片台的极尖下方的运动。

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