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11. 发明授权

US07939912B2 Spin polarization amplifying transistor 有权
标题翻译：旋转偏振放大晶体管
公开(公告)号：US07939912B2
公开(公告)日：2011-05-10
申请号：US11711445
申请日：2007-02-26
申请人： Dmitri E. Nikonov , George I. Bourianoff
发明人： Dmitri E. Nikonov , George I. Bourianoff
IPC分类号： H01L29/66
CPC分类号： H01L29/66984 , Y10T428/24843
摘要： An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.
摘要翻译：本发明的一个实施例是部分由具有足够高的铁磁转变温度的铁磁半导体形成的晶体管，以相干地放大电流的自旋极化。例如，注入的非极化控制电流在晶体管基极内产生铁磁条件，使小的自旋极化信号电流产生较大输出电流的自发磁化。

12. 发明授权

US07368791B2 Multi-gate carbon nano-tube transistors 有权
标题翻译：多栅极碳纳米管晶体管
公开(公告)号：US07368791B2
公开(公告)日：2008-05-06
申请号：US11215559
申请日：2005-08-29
申请人： Yuegang Zhang , Brian S. Doyle , George I. Bourianoff
发明人： Yuegang Zhang , Brian S. Doyle , George I. Bourianoff
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： According to one aspect of the invention, a semiconducting transistor is described. The channel portion of the transistor includes carbon nanotubes formed on top of an insulating layer which covers a local bottom gate. Source and drain conductors are located at ends of the carbon nanotubes. A gate dielectric surrounds a portion of the carbon nanotubes with a substantially uniform thickness. A local top gate is located between the source and drain conductors over the carbon nanotubes. Lower portions of the local top gate are positioned between the carbon nanotubes as the local top gate forms pi-gates or “wraparound” gates around each carbon nanotube.
摘要翻译：根据本发明的一个方面，描述了半导体晶体管。晶体管的沟道部分包括形成在覆盖局部底栅的绝缘层的顶部上的碳纳米管。源极和漏极导体位于碳纳米管的端部。栅极电介质以基本均匀的厚度围绕碳纳米管的一部分。局部顶栅位于碳纳米管之间的源极和漏极导体之间。局部顶栅的下部位于碳纳米管之间，因为局部顶栅在每个碳纳米管周围形成边界或“环绕”门。

13. 发明授权

US08697454B2 Methods of forming spin torque devices and structures formed thereby 有权
标题翻译：形成自旋扭矩装置和由此形成的结构的方法
公开(公告)号：US08697454B2
公开(公告)日：2014-04-15
申请号：US13901807
申请日：2013-05-24
申请人： Dmitri E. Nikonov , George I. Bourianoff , Ajey P. Jacob
发明人： Dmitri E. Nikonov , George I. Bourianoff , Ajey P. Jacob
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L27/222 , H01L43/08 , H01L43/12 , H03K19/18 , H03K19/23
摘要： Methods of forming spin torque microelectronic devices are described. Those methods may include forming a free FM layer on a substrate, forming a non-magnetic layer on the free FM layer, forming at least three input pillars on the non-magnetic layer, and forming an output pillar on the non-magnetic layer to form a majority gate device.
摘要翻译：描述了形成自旋转矩微电子器件的方法。这些方法可以包括在衬底上形成自由的FM层，在自由FM层上形成非磁性层，在非磁性层上形成至少三个输入柱，并在非磁性层上形成输出柱，至形成多数门装置。

14. 发明授权

US08604886B2 Spin torque oscillator having multiple fixed ferromagnetic layers or multiple free ferromagnetic layers 有权
标题翻译：具有多个固定铁磁层或多个自由铁磁层的自旋扭矩振荡器
公开(公告)号：US08604886B2
公开(公告)日：2013-12-10
申请号：US12973269
申请日：2010-12-20
申请人： Dmitri E. Nikonov , George I. Bourianoff
发明人： Dmitri E. Nikonov , George I. Bourianoff
IPC分类号： H01L29/82 , H03B28/00
CPC分类号： H03B15/006 , B82Y40/00 , H01F10/3254 , H01F10/329 , H01F41/308 , H01L43/08 , H01L43/12 , H01S1/02 , H03L7/26
摘要： A spin torque oscillator and a method of making same. The spin torque oscillator is configured to generate microwave electrical oscillations without the use of a magnetic field external thereto, the spin torque oscillator having one of a plurality of input nanopillars and a nanopillar having a plurality of free FM layers.
摘要翻译：自旋扭矩振荡器及其制造方法。自旋扭矩振荡器被配置为在不使用外部的磁场的情况下产生微波电振荡，所述自旋扭矩振荡器具有多个输入纳米柱中的一个和具有多个自由FM层的纳米柱。

15. 发明授权

US08198692B2 Spin torque magnetic integrated circuits and devices therefor 有权
标题翻译：自旋扭矩磁性集成电路及其设备
公开(公告)号：US08198692B2
公开(公告)日：2012-06-12
申请号：US13279112
申请日：2011-10-21
申请人： Dmitri E. Nikonov , George I. Bourianoff , Tahir Ghani
发明人： Dmitri E. Nikonov , George I. Bourianoff , Tahir Ghani
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/133 , H01F10/3254 , H01F10/329 , H01F41/307 , H01L27/22 , H01L27/228 , H01L43/12
摘要： Spin torque magnetic integrated circuits and devices therefor are described. In an example, a spin torque magnetic device for a logic circuit includes a majority gate structure. An output is coupled to the majority gate structure. Three inputs are also coupled to the majority gate structure.
摘要翻译：描述了自旋扭矩磁集成电路及其装置。在一个示例中，用于逻辑电路的自旋扭矩磁性装置包括多数门结构。输出耦合到多数门结构。三个输入也耦合到多数门结构。

16. 发明申请

US20120038387A1 SPIN TORQUE MAGNETIC INTEGRATED CIRCUITS AND DEVICES THEREFOR 有权
公开(公告)号：US20120038387A1
公开(公告)日：2012-02-16
申请号：US13279112
申请日：2011-10-21
申请人： Dmitri E. Nikonov , George I. Bourianoff , Tahir Ghani
发明人： Dmitri E. Nikonov , George I. Bourianoff , Tahir Ghani
IPC分类号： H03K19/23
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/133 , H01F10/3254 , H01F10/329 , H01F41/307 , H01L27/22 , H01L27/228 , H01L43/12
摘要： Spin torque magnetic integrated circuits and devices therefor are described. In an example, a spin torque magnetic device for a logic circuit includes a majority gate structure. An output is coupled to the majority gate structure. Three inputs are also coupled to the majority gate structure.

17. 发明授权

US08063460B2 Spin torque magnetic integrated circuits and devices therefor 有权
标题翻译：自旋扭矩磁性集成电路及其设备
公开(公告)号：US08063460B2
公开(公告)日：2011-11-22
申请号：US12642342
申请日：2009-12-18
申请人： Dmitri E. Nikonov , George I. Bourianoff , Tahir Ghani
发明人： Dmitri E. Nikonov , George I. Bourianoff , Tahir Ghani
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/133 , H01F10/3254 , H01F10/329 , H01F41/307 , H01L27/22 , H01L27/228 , H01L43/12
摘要： Spin torque magnetic integrated circuits and devices therefor are described. A spin torque magnetic integrated circuit includes a first free ferromagnetic layer disposed above a substrate. A non-magnetic layer is disposed above the first free ferromagnetic layer. A plurality of write pillars and a plurality of read pillars are included, each pillar disposed above the non-magnetic layer and including a fixed ferromagnetic layer.
摘要翻译：描述了自旋扭矩磁集成电路及其装置。自旋扭矩磁集成电路包括设置在基板上方的第一自由铁磁层。非磁性层设置在第一自由铁磁层的上方。包括多个写柱和多个读柱，每个柱设置在非磁性层之上并且包括固定的铁磁层。

18. 发明申请

US20100321993A1 Methods of forming spin torque devices and structures formed thereby 有权
标题翻译：形成自旋扭矩装置和由此形成的结构的方法
公开(公告)号：US20100321993A1
公开(公告)日：2010-12-23
申请号：US12456581
申请日：2009-06-18
申请人： Dmitri E. Nikonov , George I. Bourianoff , Ajey P. Jacob
发明人： Dmitri E. Nikonov , George I. Bourianoff , Ajey P. Jacob
IPC分类号： G11C11/14 , H01L21/00 , H01L29/82
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L27/222 , H01L43/08 , H01L43/12 , H03K19/18 , H03K19/23
摘要： Methods of forming spin torque microelectronic devices are described. Those methods may include forming a free FM layer on a substrate, forming a non-magnetic layer on the free FM layer, forming at least three input pillars on the non-magnetic layer, and forming an output pillar on the non-magnetic layer to form a majority gate device.
摘要翻译：描述了形成自旋转矩微电子器件的方法。这些方法可以包括在衬底上形成自由的FM层，在自由FM层上形成非磁性层，在非磁性层上形成至少三个输入柱，并在非磁性层上形成输出柱，至形成多数门装置。

19. 发明授权

US07212026B2 Spin-orbital quantum cellular automata logic devices and systems 有权
标题翻译：自旋轨道量子单元自动机逻辑器件和系统
公开(公告)号：US07212026B2
公开(公告)日：2007-05-01
申请号：US10978115
申请日：2004-10-29
申请人： George I. Bourianoff , Dmitri E. Nikonov , Jun-Fei Zheng
发明人： George I. Bourianoff , Dmitri E. Nikonov , Jun-Fei Zheng
IPC分类号： H03K19/195
CPC分类号： H03K19/02 , H03K19/16
摘要： Spin-orbital quantum cellular automata logic devices and integrated circuits in the form of a substrate having a thin film of material on the substrate having strongly coupled spin-orbital states, the thin film being patterned to define at least one input and at least one output, and to perform at least one logic operation by associated arrangement of the spin-orbital states between the input and the output. The logic devices and integrated circuits further include an input device at each input to define the spin-orbital states at each input, and an output sensor at each output for sensing the spin-orbital states of the thin film at the output. In an integrated circuit, the output of one gate or circuit, in the form of the ferromagnetically aligned spins, can be directly coupled to the next gate or circuit, so that entire circuits can be fabricated and effectively interconnected, only requiring interfacing for overall. circuit input and output using the electromagnetic inputs and magnetic measurements for the outputs.
摘要翻译：自旋轨道量子单元自动机逻辑器件和集成电路形式为衬底，其具有在衬底上的具有强耦合的自旋轨道状态的材料薄膜，所述薄膜被图案化以限定至少一个输入和至少一个输出并且通过在输入和输出之间的自旋轨道状态的相关布置来执行至少一个逻辑运算。逻辑器件和集成电路还包括在每个输入端处的输入器件，用于定义每个输入处的自旋轨道状态，以及每个输出处的输出传感器，用于感测输出端上薄膜的自旋轨道状态。在集成电路中，以铁磁对准自旋的形式的一个栅极或电路的输出可以直接耦合到下一个栅极或电路，使得可以制造和有效地互连整个电路，仅需要用于整个电路的接口输入和输出使用电磁输入和磁测量输出。

20. 发明授权

US07196367B2 Spin polarization amplifying transistor 有权
标题翻译：旋转偏振放大晶体管
公开(公告)号：US07196367B2
公开(公告)日：2007-03-27
申请号：US10956867
申请日：2004-09-30
申请人： Dmitri E. Nikonov , George I. Bourianoff
发明人： Dmitri E. Nikonov , George I. Bourianoff
IPC分类号： H01L29/76 , H01L29/94 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66984 , Y10T428/24843
摘要： An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.
摘要翻译：本发明的一个实施例是部分由具有足够高的铁磁转变温度的铁磁半导体形成的晶体管，以相干地放大电流的自旋极化。例如，注入的非极化控制电流在晶体管基极内产生铁磁条件，使小的自旋极化信号电流产生较大输出电流的自发磁化。

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