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    • 14. 发明专利
    • Open drain output buffer for single voltage source cmos
    • 开放式输出缓冲器,用于单电压源CMOS
    • JP2009177791A
    • 2009-08-06
    • JP2008310300
    • 2008-12-04
    • Exar Corpエクサー コーポレーションExar Corporation
    • LE HUNG PHAM
    • H03K19/0175H03K19/0944
    • H03K19/003H03K19/00315H03K19/0185
    • PROBLEM TO BE SOLVED: To allow an open drain output buffer to be subjected to a comparatively high voltage applied to an output pad.
      SOLUTION: The open drain buffer includes a number of floating wells, an output switching device, and a well-bias selector corresponding to them, thereby, a gate oxide film is not subjected to a voltage more than a predetermined value. Well-bias selectors of PMOS and NMOS select the highest or lowest effective voltage to apply respectively and bias a corresponding well area so as not to impose an excess electrical stress on a device switching terminal. When a switching relating voltage is applied to a terminal relating output, the well-bias selector selects another terminal to select the highest or lowest voltage continuously, and provides a suitable well bias state. A voltage divider produces a reference voltage to select the well bias voltage properly.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:允许开漏输出缓冲器经受施加到输出焊盘的较高电压。 开漏缓冲器包括多个浮置阱,输出开关器件和对应于它们的阱偏置选择器,因此栅极氧化膜不受到超过预定值的电压的影响。 PMOS和NMOS的良好偏置选择器分别选择最高或最低有效电压,并对相应的阱区进行偏置,以免在器件开关端子上施加过量的电应力。 当切换相关电压施加到与输出相关的端子时,阱偏压选择器选择另一端子连续选择最高或最低电压,并提供合适的阱偏置状态。 分压器产生参考电压,以正确选择阱偏置电压。 版权所有(C)2009,JPO&INPIT