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11. 发明授权

US08842513B2 Method of data modulation and demodulation in SoC 有权
标题翻译： SoC中的数据调制和解调方法
公开(公告)号：US08842513B2
公开(公告)日：2014-09-23
申请号：US12882969
申请日：2010-09-15
申请人： Gerald E. Sobelman , Dae-wook Kim , Man-ho Kim , Beam-hak Lee , Eui-seok Kim , Sang-woo Rhim
发明人： Gerald E. Sobelman , Dae-wook Kim , Man-ho Kim , Beam-hak Lee , Eui-seok Kim , Sang-woo Rhim
IPC分类号： H04J11/00 , H04B1/707
CPC分类号： H04B1/707
摘要： A method of modulating data, which is represented by two data types of ‘high’ and ‘low’, and demodulating the modulated data, is disclosed. In a method of data modulation and demodulation for a communication system which has a transmitting end modulating a data and a receiving end demodulating the transmitted data from the transmitting end, the data is represented by two types including ‘high’ and ‘low’, and the receiving end receives at least one data which consists of at least one code-word spread by a unique orthogonal code. The receiving end adds up the received data in the unit of code-word, and subtracts the length of the orthogonal code from a value which is obtained by doubling the sum of the code-word, when the code-word of the orthogonal code is ‘0’. The receiving end then averages the result after the subtraction in the unit of orthogonal code length and extracts the result, and therefore, obtains the data from the transmitting end.
摘要翻译：公开了一种调制数据的方法，它由两种数据类型“高”和“低”表示，并解调调制数据。在具有发送端调制数据的通信系统和从发送端解调发送数据的接收端的通信系统的数据调制和解调方法中，数据由“高”和“低”两种类型表示，接收端接收由至少一个由唯一正交码扩展的码字组成的至少一个数据。接收端以码字为单位将接收到的数据相加，并从正交码的码字的倍数为2倍的码字中减去正交码的长度， '0'。接收端然后以正交码长度为单位进行减法后的结果进行平均，并提取结果，因此从发送端获得数据。

12. 发明授权

US07617065B2 Methodology for estimating statistical distribution characteristics of physical parameters of semiconductor device 失效
标题翻译：估算半导体器件物理参数统计分布特征的方法
公开(公告)号：US07617065B2
公开(公告)日：2009-11-10
申请号：US11698690
申请日：2007-01-26
申请人： Dae-Wook Kim , Sang-Hoon Lee , Ji-Seong Doh , Moon-Hyun Yoo , Jong-Bae Lee
发明人： Dae-Wook Kim , Sang-Hoon Lee , Ji-Seong Doh , Moon-Hyun Yoo , Jong-Bae Lee
IPC分类号： G06F17/00
CPC分类号： G06F17/5009 , G01R31/31711 , G01R31/318314 , G06F2217/10 , G06F2217/78
摘要： A method for estimating statistical distribution characteristics of physical parameters of a semiconductor device includes manufacturing a plurality of semiconductor device chips, each having a plurality of transistors, preparing electrical characteristic data by measuring electrical characteristics of the plurality of transistors included in the plurality of chips, extracting an inter-chip distribution characteristic and an intra-chip distribution characteristic of the electrical characteristics by analyzing the electrical characteristic data, generating random number data satisfying the extracted inter-chip and intra-chip distribution characteristics, and performing a simulation for extracting statistical distribution characteristic data of the physical parameters of the chips, based on the random number data.
摘要翻译：一种用于估计半导体器件的物理参数的统计分布特性的方法包括制造多个半导体器件芯片，每个半导体器件芯片具有多个晶体管，通过测量包括在多个芯片中的多个晶体管的电特性来制备电特性数据，通过分析电特性数据，产生满足提取的芯片间和片内分布特性的随机数数据，提取电特性的片间分布特性和芯片内分布特性，并执行用于提取统计分布的模拟基于随机数数据的芯片的物理参数的特征数据。

13. 发明申请

US20070268925A1 Input buffer device and control method thereof 审中-公开
标题翻译：输入缓冲器及其控制方法
公开(公告)号：US20070268925A1
公开(公告)日：2007-11-22
申请号：US11434189
申请日：2006-05-16
申请人： Gerald E. Sobelman , Dae-wook Kim , Man-ho Kim , Sang-woo Rhim , Eui-seok Kim , Beom-hak Lee
发明人： Gerald E. Sobelman , Dae-wook Kim , Man-ho Kim , Sang-woo Rhim , Eui-seok Kim , Beom-hak Lee
IPC分类号： H04L12/56 , H04L12/54
CPC分类号： H04L49/9036 , H04L47/266 , H04L49/3045 , H04L49/90 , H04L49/9078
摘要： An input buffer device and control method of the input buffer device. The input buffer device includes a virtual output queuing (VOQ) buffering section which has a plurality of VOQ buffers. The input buffer device stores data which is input to an input port to a VOQ buffer corresponding to an intended output port of the data among the plurality of VOQ buffers. A shared buffering section is provided which stores the data when a VOQ buffer corresponding to the intended output port of the data is full of data. The stored data is forwarded to the VOQ buffer when the VOQ buffer is empty. Accordingly, the input buffer device can more efficiently process the data by use of the fixed-length FIFO buffers and the shared buffer.
摘要翻译：一种输入缓冲器件及其输入缓冲器的控制方法。输入缓冲器装置包括具有多个VOQ缓冲器的虚拟输出排队（VOQ）缓冲部分。输入缓冲器装置将输入到输入端口的数据存储到与多个VOQ缓冲器中的数据的预期输出端口相对应的VOQ缓冲器。提供共享缓冲部分，当与数据的预期输出端口相对应的VOQ缓冲器充满数据时，存储数据。当VOQ缓冲区为空时，将存储的数据转发到VOQ缓冲区。因此，输入缓冲器件可以通过使用固定长度的FIFO缓冲器和共享缓冲器来更有效地处理数据。

14. 发明申请

US20160247657A1 MICRO-ELECTRON COLUMN HAVING NANO STRUCTURE TIP WITH EASILY ALIGNING 审中-公开
标题翻译：具有纳米结构尖端的微电子柱具有易于对准的功能
公开(公告)号：US20160247657A1
公开(公告)日：2016-08-25
申请号：US14631729
申请日：2015-02-25
申请人： Ho Seob KIM , Tae Sik OH , Dae Wook KIM , Seung Jun AHN , Hyung Woo KIM
发明人： Ho Seob KIM , Tae Sik OH , Dae Wook KIM , Seung Jun AHN , Hyung Woo KIM
IPC分类号： H01J37/063 , H01J37/10 , H01J37/147 , H01J37/065
CPC分类号： H01J37/063 , H01J37/073 , H01J2237/0635 , H01J2237/1205 , H01J2237/1215
摘要： Disclosed is a micro-electron column having nanostructure tips. The micro-electro column includes an electron emission source that is provided with a plurality of nanostructure tips and emits electrons, a source lens, a deflector, and a focusing lens. The nanostructure tips of the electron emission source spread over an area that is larger than that of an aperture of a first lens electrode of a source lens, which is nearest to the electron emission source.
摘要翻译：公开了具有纳米结构尖端的微电子柱。微电极柱包括具有多个纳米结构尖端并发射电子的电子发射源，源极透镜，偏转器和聚焦透镜。电子发射源的纳米结构尖端分布在比离电子发射源最近的源透镜的第一透镜电极的孔径大的区域上。

15. 发明授权

US09280287B2 Method of compressing data and device for performing the same 有权
标题翻译：压缩数据的方法和执行该数据的装置
公开(公告)号：US09280287B2
公开(公告)日：2016-03-08
申请号：US14135628
申请日：2013-12-20
申请人： Man Keun Seo , Dae Wook Kim , Hong Rak Son , Jun Jin Kong
发明人： Man Keun Seo , Dae Wook Kim , Hong Rak Son , Jun Jin Kong
IPC分类号： G06F13/00 , G06F13/38 , G06F3/06 , H03M7/30
CPC分类号： G06F3/0608 , G06F3/0641 , G06F3/0655 , G06F3/0673 , G06F3/0679 , H03M7/3086 , H03M7/6082
摘要： A data compression method includes receiving an input data stream including a previous data block and a current data block, and executing a first comparison of a part of the previous data block with part of a previous reference data block, and a second comparison of the current data block with a current reference data block, where the first and second comparisons are executed in parallel. The method further includes selectively, based on results of the first and second comparisons, outputting the current data block or compressing an extended data block, where the extended data block includes the part of the previous data block and the current data block.
摘要翻译：数据压缩方法包括接收包括先前数据块和当前数据块的输入数据流，并且执行先前数据块的一部分与先前参考数据块的一部分的第一比较，以及当前具有当前参考数据块的数据块，其中第一和第二比较并行执行。该方法还包括基于第一和第二比较的结果选择性地输出当前数据块或压缩扩展数据块，其中扩展数据块包括先前数据块的一部分和当前数据块。

16. 发明授权

US08890092B2 Multi-particle beam column having an electrode layer including an eccentric aperture 有权
标题翻译：多粒子束柱具有包括偏心孔的电极层
公开(公告)号：US08890092B2
公开(公告)日：2014-11-18
申请号：US13752040
申请日：2013-01-28
申请人： Ho Seob Kim , Dae Wook Kim , Seung Jun Ahn , Tae Sik Oh
发明人： Ho Seob Kim , Dae Wook Kim , Seung Jun Ahn , Tae Sik Oh
IPC分类号： G21K5/00 , G21K1/08 , G21K5/04
CPC分类号： G21K5/04 , H01J37/045 , H01J37/28 , H01J2237/045 , H01J2237/15 , H01J2237/30483
摘要： Disclosed herein is a multi-particle beam column including electrode layer with eccentric apertures. The multi-particle beam column includes two or more particle beam columns each comprising a particle beam emission source, a deflector, and two or more electrode layers. The multi-particle beam column includes at least one electrode layer having one or more apertures that are eccentric from respective beam optical axes of the particle beam columns.
摘要翻译：本文公开了包括具有偏心孔的电极层的多粒子束柱。多粒子束柱包括两个或更多个粒子束柱，每个粒子束柱包括粒子束发射源，偏转器和两个或更多个电极层。多粒子束柱包括至少一个具有一个或多个孔的至少一个电极层，所述孔径与颗粒束柱的各个光束轴线偏心。

17. 发明授权

US08616992B2 Putter with alignment indicia 有权
标题翻译：推杆与对齐标记
公开(公告)号：US08616992B2
公开(公告)日：2013-12-31
申请号：US12601583
申请日：2008-05-27
申请人： Dae Wook Kim
发明人： Dae Wook Kim
IPC分类号： A63B69/36
CPC分类号： A63B53/0487 , A63B69/3614 , A63B69/3685 , A63B2053/0441
摘要： A putter includes a handle (2), a putter head (1) with a striking surface, and two alignment indicia (6) symmetrically arranged relative to a vertical plane (20) which is perpendicular to the striking surface and passes through a striking line. Wherein the visible part of the alignment indicia (6) are symmetrical to the vertical plane (20) when being viewed in the vertical plane (20), while not symmetrical to the vertical plane (20) when being viewed in a plane offsetting from the vertical plane (20).
摘要翻译：推杆包括手柄（2），具有冲击表面的推杆头（1）和相对于竖直平面（20）对称布置的两个对准标记（6），垂直于垂直于打击表面并穿过击打线。其中，当在垂直平面（20）中观察时，对准标记（6）的可见部分与垂直平面（20）对称，而当在从垂直平面（20）偏移的平面中观察时，与垂直平面（20）不对称垂直平面（20）。

18. 发明授权

US08318698B2 Process for synthesizing silver-silica particles and applications 有权
标题翻译：银二氧化硅颗粒合成方法及应用
公开(公告)号：US08318698B2
公开(公告)日：2012-11-27
申请号：US13031588
申请日：2011-02-21
申请人： Jong-Min Lee , Dae-Wook Kim , Young-Doo Jun , Seong-Guen Oh , Christopher Paradies
发明人： Jong-Min Lee , Dae-Wook Kim , Young-Doo Jun , Seong-Guen Oh , Christopher Paradies
IPC分类号： A61K31/695 , A61K31/28
CPC分类号： B82Y30/00 , A01N59/16 , C07B2200/11 , C08J3/2053 , C08K3/36 , C08K5/548 , C08L39/06 , Y10T428/2993 , Y10T428/2998 , A01N25/04 , A01N25/08 , A01N25/12 , A01N25/34 , A01N2300/00
摘要： Size-controlled immobilization of metal nano-clusters onto particles or nanoparticles is achieved using a polyol process. Polyol processing makes it possible to use thiol groups as a chemical protocol to functionalize the surface of particles, such as silica and polystyrene nanoparticles. Metal nano-clusters, such as silver, gold, platinum and palladium, nucleate and grow on the surface of the particles. The metal nano-clusters may be synthesized in a one-pot process from metal salts, nitrates, nitrites, sulfates, sulfites and the like. Any source of metal ions compatible with the polyol suspension and selected particles may be used. The size of immobilized metal nano-clusters may be controlled by additions of a poly(vinylpyrrolidone) or other polymer capable of regulating the metal ion reduction and nucleation process and by controlling concentration of metal ions, the nucleation and/or growth temperatures, and processing time.
摘要翻译：使用多元醇工艺可以将金属纳米簇的尺寸控制固定在颗粒或纳米颗粒上。多元醇加工使得可以使用硫醇基团作为化学方案来官能化颗粒表面，如二氧化硅和聚苯乙烯纳米颗粒。金属纳米簇，例如银，金，铂和钯，在颗粒表面成核并生长。金属纳米簇可以在一锅法中由金属盐，硝酸盐，亚硝酸盐，硫酸盐，亚硫酸盐等合成。可以使用与多元醇悬浮液和选定颗粒相容的任何金属离子源。固定金属纳米簇的大小可以通过加入聚（乙烯基吡咯烷酮）或其它能够调节金属离子还原和成核过程并通过控制金属离子浓度，成核和/或生长温度和加工的聚合物来控制时间。

19. 发明申请

US20110069770A1 Method of Data Modulation and Demodulation in SoC 有权
标题翻译： SoC中的数据调制和解调方法
公开(公告)号：US20110069770A1
公开(公告)日：2011-03-24
申请号：US12882969
申请日：2010-09-15
申请人： Gerald E. Sobelman , Dae-wook Kim , Man-ho Kim , Beam-hak Lee , Eui-seok Kim , Sang-woo Rhim
发明人： Gerald E. Sobelman , Dae-wook Kim , Man-ho Kim , Beam-hak Lee , Eui-seok Kim , Sang-woo Rhim
IPC分类号： H04L27/28
CPC分类号： H04B1/707
摘要： A method of modulating data, which is represented by two data types of ‘high’ and ‘low’, and demodulating the modulated data, is disclosed. In a method of data modulation and demodulation for a communication system which has a transmitting end modulating a data and a receiving end demodulating the transmitted data from the transmitting end, the data is represented by two types including ‘high’ and ‘low’, and the receiving end receives at least one data which consists of at least one code-word spread by a unique orthogonal code. The receiving end adds up the received data in the unit of code-word, and subtracts the length of the orthogonal code from a value which is obtained by doubling the sum of the code-word, when the code-word of the orthogonal code is ‘0’. The receiving end then averages the result after the subtraction in the unit of orthogonal code length and extracts the result, and therefore, obtains the data from the transmitting end.
摘要翻译：公开了一种调制数据的方法，它由两种数据类型“高”和“低”表示，并解调调制数据。在具有发送端调制数据的通信系统和从发送端解调发送数据的接收端的通信系统的数据调制和解调方法中，数据由“高”和“低”两种类型表示，接收端接收由至少一个由唯一正交码扩展的码字组成的至少一个数据。接收端以码字为单位将接收到的数据相加，并从正交码的码字乘以码字的和来获得的值中减去正交码的长度 '0'。接收端然后以正交码长度为单位进行减法后的结果进行平均，并提取结果，因此从发送端获得数据。

20. 发明申请

US20100117082A1 SEMICONDUCTOR DEVICE CAPABLE OF COMPENSATING FOR ELECTRICAL CHARACTERISTIC VARIATION OF TRANSISTOR ARRAY 审中-公开
标题翻译：用于电容器阵列电气特性变化补偿的半导体器件
公开(公告)号：US20100117082A1
公开(公告)日：2010-05-13
申请号：US12617082
申请日：2009-11-12
申请人： DAE WOOK KIM , Ji-Seong Doh , Sang Hoon Lee , Ji Suk Hong
发明人： DAE WOOK KIM , Ji-Seong Doh , Sang Hoon Lee , Ji Suk Hong
IPC分类号： H01L27/085
CPC分类号： H01L27/0207 , H01L27/105
摘要： A semiconductor device capable of compensating for an electrical characteristic variation of a transistor array is provided. The semiconductor device includes an N-well region and a transistor array spaced from the N-well region and including a plurality of transistors. A characteristic of each of the transistors is adjusted to enable the transistors to have a same electrical characteristic.
摘要翻译：提供能够补偿晶体管阵列的电特性变化的半导体器件。半导体器件包括N阱区域和与N阱区域间隔开并且包括多个晶体管的晶体管阵列。调整每个晶体管的特性以使晶体管具有相同的电特性。

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