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11. 发明授权

US08674954B2 Organic light emitting diode display and method of manufacturing the same 有权
标题翻译：有机发光二极管显示器及其制造方法
公开(公告)号：US08674954B2
公开(公告)日：2014-03-18
申请号：US12923070
申请日：2010-08-31
申请人： Do-Hyun Kwon , Il-Jeong Lee , Choong-Youl Im , Young-Dae Kim , Ju-Won Yoon , Jong-Mo Yeo , Cheol-Ho Yu
发明人： Do-Hyun Kwon , Il-Jeong Lee , Choong-Youl Im , Young-Dae Kim , Ju-Won Yoon , Jong-Mo Yeo , Cheol-Ho Yu
IPC分类号： G06F3/041
CPC分类号： H01L27/323 , G06F3/0412 , G06F2203/04103
摘要： A method of manufacturing an organic light emitting diode display includes forming an organic layer on a support, forming a touch sensor on the organic layer, the touch sensor including a touch electrode pattern and a polarizing layer, separating the touch sensor from the support by removing the organic layer, and attaching the touch sensor to an organic light emitting diode display panel.
摘要翻译：制造有机发光二极管显示器的方法包括在支撑体上形成有机层，在有机层上形成触摸传感器，触摸传感器包括触摸电极图案和偏振层，通过去除有机层，以及将触摸传感器附接到有机发光二极管显示面板。

12. 发明授权

US08558235B2 Organic light emitting diode display and manufacturing method thereof 有权
标题翻译：有机发光二极管显示及其制造方法
公开(公告)号：US08558235B2
公开(公告)日：2013-10-15
申请号：US13036502
申请日：2011-02-28
申请人： Ju-Won Yoon , Il-Jeong Lee , Choong-Youl Im , Young-Dae Kim , Jong-Mo Yeo , Do-Hyun Kwon , Cheol-Ho Yu
发明人： Ju-Won Yoon , Il-Jeong Lee , Choong-Youl Im , Young-Dae Kim , Jong-Mo Yeo , Do-Hyun Kwon , Cheol-Ho Yu
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3248 , H01L51/5218 , H01L2227/323
摘要： An organic light emitting diode (OLED) display that includes a substrate, a thin film transistor, and a pixel electrode. The thin film transistor is formed on the substrate and includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. The pixel electrode is electrically connected to the thin film transistor and is formed on the same layer as the source electrode and the drain electrode. The source electrode and the drain electrode include a first conductive layer, and the pixel electrode includes a first conductive layer and a second conductive layer stacked thereon.
摘要翻译：一种包括衬底，薄膜晶体管和像素电极的有机发光二极管（OLED）显示器。薄膜晶体管形成在基板上，并且包括半导体层，栅电极，源电极和漏电极。像素电极电连接到薄膜晶体管，并且形成在与源电极和漏电极相同的层上。源电极和漏电极包括第一导电层，并且像素电极包括堆叠在其上的第一导电层和第二导电层。

13. 发明授权

US08367278B2 Halftone mask and manufacturing method thereof and method for forming film using the same 有权
标题翻译：半色调掩模及其制造方法和使用其形成膜的方法
公开(公告)号：US08367278B2
公开(公告)日：2013-02-05
申请号：US12824086
申请日：2010-06-25
申请人： Oh-Seob Kwon , Jae-Yong Kim , Sung-Chul Kim , Kyoung-Bo Kim , Il-Jeong Lee , Cheol-Ho Yu , Yong-Woo Park , Han-Hee Yoon , In-Young Jung
发明人： Oh-Seob Kwon , Jae-Yong Kim , Sung-Chul Kim , Kyoung-Bo Kim , Il-Jeong Lee , Cheol-Ho Yu , Yong-Woo Park , Han-Hee Yoon , In-Young Jung
IPC分类号： G03F1/32
CPC分类号： G03F1/50
摘要： Embodiments relate to halftone masks that can uniformly form the height of an underlying layer in two regions that are spaced apart from each other, a manufacturing method thereof, and a method for forming a film using the same. The halftone mask includes a first light blocking unit and a second light blocking unit, and a semi-transmitting unit that is disposed adjacent to the side of the second light blocking unit. The first and second light blocking units block light and are spaced apart from each other at a predetermined interval. The semi-transmitting unit is positioned at a side far from the first light blocking unit and reduces intensity of light. Sum of the second length of the second light blocking unit and the third length of the semi-transmitting unit is larger than the first length of the first blocking unit.
摘要翻译：实施例涉及可以在彼此间隔开的两个区域中均匀地形成下层的高度的半色调掩模，其制造方法和使用其形成膜的方法。半色调掩模包括第一遮光单元和第二遮光单元，以及邻近第二遮光单元的一侧设置的半透射单元。第一和第二光阻挡单元阻挡光并以预定间隔彼此间隔开。半透射单元位于远离第一遮光单元的一侧，并且减小光的强度。第二遮光单元的第二长度和半透射单元的第三长度之和大于第一遮光单元的第一长度。

14. 发明申请

US20110084279A1 Organic light emitting diode display 有权
标题翻译：有机发光二极管显示
公开(公告)号：US20110084279A1
公开(公告)日：2011-04-14
申请号：US12801686
申请日：2010-06-21
申请人： Do-Hyun Kwon , Choong-Youl Im , Dae-Hyun No , Ju-Won Yoon , Jong-Mo Yeo , Song-Yi Jeon , Il-Jeong Lee , Cheol-Ho Yu , Young-Dae Kim , Jin-Gyu Kang , Gyoo-Chul Jo
发明人： Do-Hyun Kwon , Choong-Youl Im , Dae-Hyun No , Ju-Won Yoon , Jong-Mo Yeo , Song-Yi Jeon , Il-Jeong Lee , Cheol-Ho Yu , Young-Dae Kim , Jin-Gyu Kang , Gyoo-Chul Jo
IPC分类号： H01L51/52
CPC分类号： H01L51/5218 , H01L27/3262 , H01L2251/5315
摘要： An organic light emitting diode display that includes a first electrode arranged on a substrate, an organic emission layer arranged on the first electrode and a second electrode arranged on the organic emission layer, the first electrode includes a first layer, a second layer and a third layer stacked sequentially on the organic emission layer, the second layer has a lower work function than the third. Here, the second layer has a higher work function than that of the third layer.
摘要翻译：一种有机发光二极管显示器，包括布置在基板上的第一电极，布置在第一电极上的有机发射层和布置在有机发射层上的第二电极，第一电极包括第一层，第二层和第三层层顺次堆叠在有机发光层上，第二层具有比第三层更低的功函数。这里，第二层具有比第三层更高的功函数。

15. 发明申请

US20100330468A1 HALFTONE MASK AND MANUFACTURING METHOD THEREOF AND METHOD FOR FORMING FILM USING THE SAME 有权
标题翻译：黑龙骨掩模及其制造方法及使用其形成膜的方法
公开(公告)号：US20100330468A1
公开(公告)日：2010-12-30
申请号：US12824086
申请日：2010-06-25
申请人： Oh-Seob Kwon , Jae-Yong Kim , Sung-Chul Kim , Kyoung-Bo Kim , Il-Jeong Lee , Cheol-Ho Yu , Yong-Woo Park , Han-Hee Yoon , In-Young Jung
发明人： Oh-Seob Kwon , Jae-Yong Kim , Sung-Chul Kim , Kyoung-Bo Kim , Il-Jeong Lee , Cheol-Ho Yu , Yong-Woo Park , Han-Hee Yoon , In-Young Jung
IPC分类号： G03F7/20 , G03F1/00
CPC分类号： G03F1/50
摘要： Embodiments relate to halftone masks that can uniformly form the height of an underlying layer in two regions that are spaced apart from each other, a manufacturing method thereof, and a method for forming a film using the same. The halftone mask includes a first light blocking unit and a second light blocking unit, and a semi-transmitting unit that is disposed adjacent to the side of the second light blocking unit. The first and second light blocking units block light and are spaced apart from each other at a predetermined interval. The semi-transmitting unit is positioned at a side far from the first light blocking unit and reduces intensity of light. Sum of the second length of the second light blocking unit and the third length of the semi-transmitting unit is larger than the first length of the first blocking unit.
摘要翻译：实施例涉及可以在彼此间隔开的两个区域中均匀地形成下层的高度的半色调掩模，其制造方法和使用其形成膜的方法。半色调掩模包括第一遮光单元和第二遮光单元，以及邻近第二遮光单元的一侧设置的半透射单元。第一和第二光阻挡单元阻挡光并以预定间隔彼此间隔开。半透射单元位于远离第一遮光单元的一侧，并且减小光的强度。第二遮光单元的第二长度和半透射单元的第三长度之和大于第一遮光单元的第一长度。

16. 发明申请

US20100001287A1 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same 有权
标题翻译：薄膜晶体管，其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US20100001287A1
公开(公告)日：2010-01-07
申请号：US12458126
申请日：2009-07-01
申请人： Ji-Su Ahn , Eui-Hoon Hwang , Cheol-Ho Yu , Kwang-Nam Kim , Sung-Chul Kim
发明人： Ji-Su Ahn , Eui-Hoon Hwang , Cheol-Ho Yu , Kwang-Nam Kim , Sung-Chul Kim
IPC分类号： H01L29/786 , H01L21/336 , H01L33/00
CPC分类号： H01L29/78675 , H01L27/1248 , H01L27/1285 , H01L27/3262 , H01L29/66757
摘要： A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.
摘要翻译：一种薄膜晶体管（TFT），包括在基板上的晶体半导体图形，在晶体半导体图案上的栅极绝缘层，栅极绝缘层具有两个第一源极/漏极接触孔和半导体图案访问孔，栅电极在栅极绝缘层上，栅电极位于两个第一源极/漏极接触孔之间，覆盖栅电极的层间绝缘层，其中具有两个第二源极/漏极接触孔的层间绝缘层，以及栅电极上的源极和漏极层间绝缘层，源极和漏极中的每一个与栅电极绝缘，并且具有通过第一和第二源极/漏极接触孔连接到晶体半导体图案的部分。

17. 发明授权

US07615421B2 Method for fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07615421B2
公开(公告)日：2009-11-10
申请号：US11011585
申请日：2004-12-15
申请人： Sang-Woong Lee , Jae-Young Oh , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee , Cheol-Ho Yu
发明人： Sang-Woong Lee , Jae-Young Oh , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee , Cheol-Ho Yu
IPC分类号： H01L21/84
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline silicon layer having large grain size and containing a trace of residual metal catalyst by heat treating thereby crystallizing the metal catalyst layer after forming an amorphous silicon layer on a substrate, forming a capping layer formed of nitride film having 1.78 to 1.90 of the refraction index when crystallizing the amorphous silicon layer and forming a metal catalyst layer on the capping layer, but also controls characteristics of the polycrystalline silicon layer by controlling the refraction index of the capping layer.
摘要翻译：本发明涉及一种制造薄膜晶体管的方法，更具体地说，涉及制造薄膜晶体管的方法，该方法不仅通过热处理制造具有大晶粒尺寸并且含有微量残余金属催化剂的多晶硅层，从而使在基板上形成非晶硅层之后，形成由氮化物膜形成的覆盖层，所述覆盖层在结晶非晶硅层时具有1.78〜1.90的折射率，并且在封盖层上形成金属催化剂层，而且还控制特性的多晶硅层，通过控制覆盖层的折射率。

18. 发明申请

US20060046357A1 Method for fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20060046357A1
公开(公告)日：2006-03-02
申请号：US11011585
申请日：2004-12-15
申请人： Sang-Woong Lee , Jae-Young Oh , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee , Cheol-Ho Yu
发明人： Sang-Woong Lee , Jae-Young Oh , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee , Cheol-Ho Yu
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline silicon layer having large grain size and containing a trace of residual metal catalyst by heat treating thereby crystallizing the metal catalyst layer after forming an amorphous silicon layer on a substrate, forming a capping layer formed of nitride film having 1.78 to 1.90 of the refraction index when crystallizing the amorphous silicon layer and forming a metal catalyst layer on the capping layer, but also controls characteristics of the polycrystalline silicon layer by controlling the refraction index of the capping layer. The present invention provides a method for fabricating thin film transistor comprising the steps of preparing an insulation substrate; forming an amorphous silicon layer on the substrate; forming a capping layer having 1.78 to 1.90 of the refraction index on the amorphous silicon layer; forming a metal catalyst layer on the capping layer; and crystallizing the amorphous silicon layer into a polycrystalline silicon layer by heat treating the substrate. Therefore, a method for fabricating thin film transistor fabricates a thin film transistor which has superior characteristics and is capable of controlling the characteristics by controlling the refraction index of capping layer formed of nitride film to 1.78 to 1.90 when performing crystallization by super grain silicon crystallization method, thereby obtaining a semiconductor layer having a large grain size so that electron mobility is increased, and an amount of metal catalyst remained is decreased to lower leakage current, and controlling grain size of polycrystalline silicon layer by the refraction index of the capping layer so that a polycrystalline silicon layer having desired size and uniformity is obtained.
摘要翻译：本发明涉及一种制造薄膜晶体管的方法，更具体地说，涉及制造薄膜晶体管的方法，该方法不仅通过热处理制造具有大晶粒尺寸并且含有微量残余金属催化剂的多晶硅层，从而使在基板上形成非晶硅层之后，形成由氮化物膜形成的覆盖层，所述覆盖层在结晶非晶硅层时具有1.78〜1.90的折射率，并且在封盖层上形成金属催化剂层，而且还控制特性的多晶硅层，通过控制覆盖层的折射率。本发明提供一种制造薄膜晶体管的方法，包括以下步骤：制备绝缘衬底; 在所述基板上形成非晶硅层; 形成在非晶硅层上具有1.78至1.90折射率的覆盖层; 在覆盖层上形成金属催化剂层; 以及通过对所述衬底进行热处理将所述非晶硅层结晶成多晶硅层。因此，制造薄膜晶体管的方法制造薄膜晶体管，其具有优异的特性，并且能够通过将由氮化物膜形成的覆盖层的折射率控制在通过超晶硅结晶法进行结晶时为1.78〜1.90的特性从而获得具有大晶粒尺寸的电子迁移率增加的半导体层，并且减少金属催化剂的剩余量以降低泄漏电流，并且通过覆盖层的折射率控制多晶硅层的晶粒尺寸，使得得到所需尺寸和均匀性的多晶硅层。

19. 发明授权

US08970539B2 Organic light emitting display apparatus 有权
标题翻译：有机发光显示装置
公开(公告)号：US08970539B2
公开(公告)日：2015-03-03
申请号：US12805882
申请日：2010-08-23
申请人： Do-Hyun Kwon , Choong-Youl Im , Il-Jeong Lee , Young-Dae Kim , Ju-Won Yoon , Jong-Mo Yeo , Cheol-Ho Yu
发明人： Do-Hyun Kwon , Choong-Youl Im , Il-Jeong Lee , Young-Dae Kim , Ju-Won Yoon , Jong-Mo Yeo , Cheol-Ho Yu
IPC分类号： G06F3/044 , G06F3/041 , H01L27/32 , H01L51/52
CPC分类号： G06F3/0412 , G06F3/044 , H01L27/323 , H01L27/3244 , H01L27/3248 , H01L51/5253
摘要： An organic light emitting display apparatus including a substrate, a first touch sensing electrode layer on the substrate, a first protective layer on the substrate, the first protective layer covering the first touch sensing electrode layer, a ground layer on the first protective layer, the ground layer being electrically grounded, an insulating layer on the ground layer, and an organic light emitting device on the insulating layer.
摘要翻译：一种有机发光显示装置，包括基板，基板上的第一触摸感测电极层，基板上的第一保护层，覆盖第一触摸感测电极层的第一保护层，第一保护层上的接地层，接地层，接地层上的绝缘层和绝缘层上的有机发光器件。

20. 发明授权

US08575598B2 Organic light emitting diode display 有权
标题翻译：有机发光二极管显示
公开(公告)号：US08575598B2
公开(公告)日：2013-11-05
申请号：US12801686
申请日：2010-06-21
申请人： Do-Hyun Kwon , Choong-Youl Im , Dae-Hyun No , Ju-Won Yoon , Jong-Mo Yeo , Song-Yi Jeon , Il-Jeong Lee , Cheol-Ho Yu , Young-Dae Kim , Jin-Gyu Kang , Gyoo-Chul Jo
发明人： Do-Hyun Kwon , Choong-Youl Im , Dae-Hyun No , Ju-Won Yoon , Jong-Mo Yeo , Song-Yi Jeon , Il-Jeong Lee , Cheol-Ho Yu , Young-Dae Kim , Jin-Gyu Kang , Gyoo-Chul Jo
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/5218 , H01L27/3262 , H01L2251/5315
摘要： An organic light emitting diode display that includes a first electrode arranged on a substrate, an organic emission layer arranged on the first electrode and a second electrode arranged on the organic emission layer, the first electrode includes a first layer, a second layer and a third layer stacked sequentially on the organic emission layer, the second layer has a lower work function than the third. Here, the second layer has a higher work function than that of the third layer.
摘要翻译：一种有机发光二极管显示器，包括布置在基板上的第一电极，布置在第一电极上的有机发射层和布置在有机发射层上的第二电极，第一电极包括第一层，第二层和第三层层顺次堆叠在有机发光层上，第二层具有比第三层更低的功函数。这里，第二层具有比第三层更高的功函数。

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