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11. 发明授权

US08304707B2 Method and apparatus providing an optical guide in image sensor devices 有权
标题翻译：在图像传感器装置中提供光导的方法和装置
公开(公告)号：US08304707B2
公开(公告)日：2012-11-06
申请号：US12393812
申请日：2009-02-26
申请人： Ji Soo Lee , Jeff A. Mckee , Chandra Mouli
发明人： Ji Soo Lee , Jeff A. Mckee , Chandra Mouli
IPC分类号： H01L27/00
CPC分类号： H01L27/14625 , H01L27/14609 , H01L27/14623 , H01L27/14627 , H01L27/14643
摘要： A device and method for providing an optical guide of a pixel to guide incoming light to/from a photo-conversion device of the pixel to improve the optical crosstalk immunity. The optical guide includes an optically reflecting barrier formed as a trench filled with a material which produces reflection. The trench fill material may have an index of refraction that is less than the index of refraction of the material used for the trench surrounding layers to provide a light reflective structure or the trench fill material may provide a reflection surface.
摘要翻译：一种用于提供像素的光导以将来自/来自像素的光转换装置的入射光引导以提高光学串扰抗扰度的装置和方法。光导包括形成为填充有产生反射的材料的沟槽的光反射势垒。沟槽填充材料可以具有小于用于沟槽周围层的材料的折射率以提供光反射结构或者沟槽填充材料可以提供反射表面的折射率。

12. 发明授权

US08298846B2 Transparent conductor based pinned photodiode 有权
标题翻译：透明导体固定光电二极管
公开(公告)号：US08298846B2
公开(公告)日：2012-10-30
申请号：US12704769
申请日：2010-02-12
申请人： Chandra Mouli , Howard E. Rhodes
发明人： Chandra Mouli , Howard E. Rhodes
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/1463 , H01L27/14689
摘要： A pinned photodiode with improved short wavelength light response. In exemplary embodiments of the invention, a gate oxide is formed over a doped, buried region in a semiconductor substrate. A gate conductor is formed on top of the gate oxide. The gate conductor is transparent, and in one embodiment is a layer of indium-tin oxide. The transparent conductor can be biased to reduce the need for a surface dopant in creating a pinned photodiode region. The biasing of the transparent conductor produces a hole-rich accumulation region near the surface of the substrate. The gate conductor material permits a greater amount of charges from short wavelength light to be captured in the photo-sensing region in the substrate, and thereby increases the quantum efficiency of the photosensor.
摘要翻译：具有改善的短波长光响应的钉扎光电二极管。在本发明的示例性实施例中，在半导体衬底中的掺杂的掩埋区域上形成栅极氧化物。栅极导体形成在栅极氧化物的顶部。栅极导体是透明的，在一个实施例中是一层氧化铟锡。透明导体可以被偏置以减少在产生钉扎光电二极管区域时对表面掺杂剂的需要。透明导体的偏压在基板的表面附近产生一个富含孔的堆积区域。栅极导体材料允许在衬底中的光敏区域中捕获较短波长的光的更大量的电荷，从而提高光电传感器的量子效率。

13. 发明申请

US20120096167A1 RESOURCE ALLOCATION USING SHARED RESOURCE POOLS 有权
标题翻译：资源分配使用共享资源池
公开(公告)号：US20120096167A1
公开(公告)日：2012-04-19
申请号：US13079593
申请日：2011-04-04
申请人： James Douglas Free , Kenneth Owen Michie , Chandra Mouli Ravipati
发明人： James Douglas Free , Kenneth Owen Michie , Chandra Mouli Ravipati
IPC分类号： G06F15/173
CPC分类号： G06F9/5011 , G06F2209/5011
摘要： The present disclosure describes methods and systems for managing resources, for example in connection with call admission control or other communications or transactions in a system. In particular, a plurality of resource pools are established. At least a first or priority resource is associated with a minimum resource amount, while at least a second or normal resource pool is associated with a maximum resource amount. From the system resource pools, allocations are made to each of a plurality of system servers. If a server receives a request for priority resources that cannot be satisfied from the allocation of priority resources made to that server, that server may borrow from an allocation of normal resources. Resources can also be shared between servers. Accordingly, if required resources are not available from an allocation made to a server receiving the request for resources, that server can request resources from another server. In responding to a request to share resources, a server can attempt to fill the request as if the request had originally been made to that server.
摘要翻译：本公开描述了用于管理资源的方法和系统，例如结合呼叫许可控制或系统中的其他通信或事务。特别地，建立了多个资源池。至少第一或优先资源与最小资源量相关联，而至少第二或正常资源池与最大资源量相关联。从系统资源池中，对多个系统服务器中的每一个进行分配。如果服务器从对该服务器的优先级资源的分配中收到对于不能满足的优先资源的请求，则该服务器可以从正常资源的分配中借用。资源也可以在服务器之间共享。因此，如果从对接收资源请求的服务器的分配中不可用所需的资源，则该服务器可以从另一个服务器请求资源。在响应共享资源的请求时，服务器可以尝试填充请求，就像最初向该服务器发出请求一样。

14. 发明申请

US20120076129A1 AUTOMATIC USER REDUNDANCY DETERMINATION 有权
标题翻译：自动用户冗余确定
公开(公告)号：US20120076129A1
公开(公告)日：2012-03-29
申请号：US12893143
申请日：2010-09-29
申请人： James Douglas Free , Kenneth Owen Michie , Chandra Mouli Ravipati
发明人： James Douglas Free , Kenneth Owen Michie , Chandra Mouli Ravipati
IPC分类号： H04L12/66
CPC分类号： H04L41/5054 , H04L65/1006 , H04L69/40
摘要： The embodiments presented herein provide an automated process for provisioning a user in a communication system. A session manager, which can be a server in the communication system that provides call connection and routing, may receive registration request from communication device (e.g. a cellular telephone, an IP-enabled phone, etc.). The session manager may determine one or more characteristics about the communication device and/or determine a load on one or more other session managers in a cluster of session managers. Based on both the communication device characteristics and/or the loads on the two or more session managers, the session manager can determine a set of session managers, which may include a primary session manager and a secondary session manager, which can manage the user data for the communication device. This session manager set information may then be sent to the communication device and to other session managers in the cluster. The set of session managers may then manage the user data for the communication device.
摘要翻译：这里呈现的实施例提供了一种在通信系统中为用户提供用户的自动化过程。可以是提供呼叫连接和路由的通信系统中的服务器的会话管理器可以从通信设备（例如蜂窝电话，启用IP的电话等）接收注册请求。会话管理器可以确定关于通信设备的一个或多个特性和/或确定会话管理器集群中的一个或多个其他会话管理器的负载。基于通信设备特性和/或两个或更多个会话管理器上的负载，会话管理器可以确定一组会话管理器，其可以包括可以管理用户数据的主会话管理器和次会话管理器用于通信设备。然后可以将该会话管理器集信息发送到集群中的通信设备和其他会话管理器。然后该组会话管理器可以管理通信设备的用户数据。

15. 发明申请

US20120064685A1 Methods of making random access memory devices, transistors, and memory cells 有权
标题翻译：制造随机存取存储器件，晶体管和存储器单元的方法
公开(公告)号：US20120064685A1
公开(公告)日：2012-03-15
申请号：US13301916
申请日：2011-11-22
申请人： Chandra Mouli
发明人： Chandra Mouli
IPC分类号： H01L21/336
CPC分类号： H01L29/66666 , H01L21/8213 , H01L27/105 , H01L27/10826 , H01L27/10873 , H01L27/10879 , H01L29/1054 , H01L29/1608 , H01L29/165 , H01L29/41783 , H01L29/4236 , H01L29/7827 , H01L29/785 , Y10S438/931
摘要： A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral devices do not include any carbonated portions. A transistor includes a first source/drain, a second source/drain, a channel including a carbonated portion of a semiconductive substrate that contains SiC between the first and second sources/drains and a gate operationally associated with opposing sides of the channel.
摘要翻译：存储器件包括存储器单元阵列和外围设备。至少一些单独的记忆单元包括含有SiC的碳酸化部分。至少一些外围设备不包括任何碳酸化部分。晶体管包括第一源极/漏极，第二源极/漏极，包括在第一和第二源极/漏极之间包含SiC的半导体衬底的碳酸化部分的沟道以及与沟道的相对侧可操作地相关联的栅极。

16. 发明申请

US20120056151A1 Memory Devices, Memory Device Constructions, Constructions, Memory Device Forming Methods, Current Conducting Devices, and Memory Cell Programming Methods 有权
标题翻译：存储器件，存储器件结构，构造，存储器件形成方法，电流传导器件和存储器单元编程方法
公开(公告)号：US20120056151A1
公开(公告)日：2012-03-08
申请号：US13292932
申请日：2011-11-09
申请人： Chandra Mouli
发明人： Chandra Mouli
IPC分类号： H01L29/15
CPC分类号： H01L27/2418 , G11C5/02 , G11C11/34 , G11C11/39 , G11C11/4026 , G11C11/5664 , G11C11/5678 , G11C11/5685 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0014 , G11C13/0016 , G11C13/003 , G11C2013/009 , G11C2213/72 , G11C2213/74 , G11C2213/76 , G11C2216/08 , H01L29/6609 , H01L45/00 , H01L45/141 , H01L45/145 , H01L45/16
摘要： Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive states, and a diode configured to allow a current to flow from the wordline through the memory element to the bitline responsive to a voltage being applied across the wordline and the bitline and to decrease the current if the voltage is increased or decreased. Some embodiments include memory devices having a wordline, a bitline, memory element selectively configurable in one of two or more different resistive states, a first diode configured to inhibit a first current from flowing from the bitline to the wordline responsive to a first voltage, and a second diode comprising a dielectric material and configured to allow a second current to flow from the wordline to the bitline responsive to a second voltage.
摘要翻译：一些实施例包括具有字线，位线，可选择性地以三种或更多种不同电阻状态中的一种状态配置的存储器元件的存储器件，以及被配置为允许电流从字线通过存储器元件流过到位线的二极管，电压施加在字线和位线之间，并且如果电压增加或减小则降低电流。一些实施例包括具有字线，位线，可选择性地以两种或多种不同电阻状态之一配置的存储器元件的存储器件，被配置为阻止第一电流响应于第一电压从位线流向字线的第一二极管，以及第二二极管，包括电介质材料，并被配置为响应于第二电压允许第二电流从字线流到位线。

17. 发明授权

US08080837B2 Memory devices, transistors, and memory cells 有权
标题翻译：存储器件，晶体管和存储器单元
公开(公告)号：US08080837B2
公开(公告)日：2011-12-20
申请号：US11408874
申请日：2006-04-19
申请人： Chandra Mouli
发明人： Chandra Mouli
IPC分类号： H01L29/78
CPC分类号： H01L29/66666 , H01L21/8213 , H01L27/105 , H01L27/10826 , H01L27/10873 , H01L27/10879 , H01L29/1054 , H01L29/1608 , H01L29/165 , H01L29/41783 , H01L29/4236 , H01L29/7827 , H01L29/785 , Y10S438/931
摘要： A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral devices do not include any carbonated portions. A transistor includes a first source/drain, a second source/drain, a channel including a carbonated portion of a semiconductive substrate that contains SiC between the first and second sources/drains and a gate operationally associated with opposing sides of the channel.
摘要翻译：存储器件包括存储器单元阵列和外围设备。至少一些单独的记忆单元包括含有SiC的碳酸化部分。至少一些外围设备不包括任何碳酸化部分。晶体管包括第一源极/漏极，第二源极/漏极，包括在第一和第二源极/漏极之间包含SiC的半导体衬底的碳酸化部分的沟道以及与沟道的相对侧可操作地相关联的栅极。

18. 发明授权

US08076717B2 Vertically-oriented semiconductor selection device for cross-point array memory 有权
标题翻译：用于交叉点阵列存储器的垂直取向的半导体选择装置
公开(公告)号：US08076717B2
公开(公告)日：2011-12-13
申请号：US12469433
申请日：2009-05-20
申请人： Gurtej Sandhu , Chandra Mouli , John K. Zahurak
发明人： Gurtej Sandhu , Chandra Mouli , John K. Zahurak
IPC分类号： H01L29/66
CPC分类号： H01L29/7827 , H01L27/2454 , H01L27/2463 , H01L45/06 , H01L45/1233
摘要： A vertical semiconductor material mesa upstanding from a semiconductor base that forms a conductive channel between first and second doped regions. The first doped region is electrically coupled to one or more first silicide layers on the surface of the base. The second doped region is electrically coupled to a second silicide layer on the upper surface of the mesa. A gate conductor is provided on one or more sidewalls of the mesa.
摘要翻译：从半导体基底直立的垂直半导体材料，其在第一和第二掺杂区域之间形成导电通道。第一掺杂区域电耦合到基底表面上的一个或多个第一硅化物层。第二掺杂区域电耦合到台面的上表面上的第二硅化物层。栅极导体设置在台面的一个或多个侧壁上。

19. 发明授权

US08035142B2 Deuterated structures for image sensors and methods for forming the same 有权
公开(公告)号：US08035142B2
公开(公告)日：2011-10-11
申请号：US10885650
申请日：2004-07-08
申请人： Chandra Mouli
发明人： Chandra Mouli
IPC分类号： H01L31/062
CPC分类号： H01L27/14689 , H01L27/14601 , H01L27/14609 , H01L27/1463 , H01L27/14687
摘要： A pixel cell with a photo-conversion device and at least one structure includes a deuterated material adjacent the photo-conversion device.

20. 发明申请

US20110151629A1 Recessed Channel Negative Differential Resistance-Based Memory Cell 有权
标题翻译：嵌入式通道基于负差分电阻的存储单元
公开(公告)号：US20110151629A1
公开(公告)日：2011-06-23
申请号：US13038443
申请日：2011-03-02
申请人： Chandra Mouli
发明人： Chandra Mouli
IPC分类号： H01L21/332
CPC分类号： H01L29/74 , H01L27/1027 , H01L27/1203 , H01L29/66363
摘要： Disclosed herein is an improved recessed thyristor-based memory cell. The disclosed cell comprises in one embodiment a conductive plug recessed into the bulk of the substrate, which is coupled to or comprises the enable gate of the cell. Vertically disposed around this recessed gate is a thyristor, whose anode (source; p-type region) is connected to the bit line and cathode (drain; n-type region) is connected to the word line. Aside from the recessed enable gate, the disclosed cell comprises no other gate, such as an access transistor, and hence is essentially a one-transistor device. As a result, and as facilitated by the vertical disposition of the thyristor, the disclosed cell takes up a small amount of area on an integrated circuit when compared to a traditional DRAM cell. Moreover, the disclosed cell is simple to manufacture in its various embodiments, and is easy to configure into an array of cells. Isolation underneath the cell, while not required in all useful embodiments, assists in improving the data retention of the cell and extends the time needed between cell refresh.
摘要翻译：本发明公开了一种改进的基于嵌入式可晶闸管的存储单元。所公开的单元在一个实施例中包括凹入到基板的主体中的导电插塞，其耦合到或包括电池的使能栅极。垂直设置在该凹入栅极周围的是晶闸管，其阳极（源极; p型区域）连接到位线，阴极（漏极; n型区域）连接到字线。除了凹入的使能栅极之外，所公开的单元不包括诸如存取晶体管的其它栅极，因此本质上是单晶体管器件。结果，并且由于晶闸管的垂直布置方便，当与传统DRAM单元相比时，所公开的单元在集成电路上占用少量的面积。此外，所公开的小区在其各种实施例中容易制造，并且易于配置成单元阵列。在所有有用的实施例中，在细胞之下的隔离虽然不是必需的，但有助于改善细胞的数据保留并延长细胞刷新所需的时间。

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