会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 14. 发明申请
    • INSPECTION GUIDED OVERLAY METROLOGY
    • 检验指导覆盖计量
    • WO2011085255A2
    • 2011-07-14
    • PCT/US2011/020587
    • 2011-01-07
    • KLA-TENCOR CORPORATIONCHANG, EllisWIDMANN, AmirPARK, Allen
    • CHANG, EllisWIDMANN, AmirPARK, Allen
    • H01L21/66
    • G01N21/9501G01N21/95607G01N2021/8822G03F7/70633G03F7/7065H01L22/12H01L2924/0002H01L2924/00
    • Inspection guided overlay metrology may include performing a pattern search in order to identify a predetermined pattern on a semiconductor wafer, generating a care area for all instances of the predetermined pattern on the semiconductor wafer, identifying defects within generated care areas by performing an inspection scan of each of the generated care areas, wherein the inspection scan includes a low-threshold or a high sensitivity inspection scan, identifying overlay sites of the predetermined pattern of the semiconductor wafer having a measured overlay error larger than a selected overlay specification utilizing a defect inspection technique, comparing location data of the identified defects of a generated care area to location data of the identified overlay sites within the generated care area in order to identify one or more locations wherein the defects are proximate to the identified overlay sites, and generating a metrology sampling plan based on the identified locations.
    • 检查引导覆盖测量可以包括执行图案搜索以便识别半导体晶片上的预定图案,为半导体晶片上的预定图案的所有实例生成护理区域,识别生成的内部缺陷 通过对每个所产生的护理区域执行检查扫描,其中所述检查扫描包括低阈值或高灵敏度检查扫描,识别所述半导体晶片的所述预定图案的重叠部位,所述重叠部位的测量重叠误差大于 使用缺陷检查技术选择重叠指定;将所生成的护理区域的所识别的缺陷的位置数据与所生成的护理区域内的所识别的覆盖位置的位置数据进行比较,以便识别其中所述缺陷接近所识别的一个或多个位置 覆盖网站,并基于识别的l生成计量抽样计划 ocations。
    • 17. 发明申请
    • METHOD FOR GENERATING A DESIGN RULE MAP HAVING SPATIALLY VARYING OVERLAY BUDGET
    • 用于生成具有空间变化的覆盖预算的设计规则地图的方法
    • WO2008036827A2
    • 2008-03-27
    • PCT/US2007/079053
    • 2007-09-20
    • KLA-TENCOR TECHNOLOGIES CORPORATIONADEL, MichaelCHANG, Ellis
    • ADEL, MichaelCHANG, Ellis
    • G06F17/50
    • G03F7/70633G03F7/70533
    • The invention is a method for generating a design rule map having a spatially varying overlay error budget. Additionally, the spatially varying overlay error budget can be employed to determine if wafers are fabricated in compliance with specifications. In one approach a design data file that contains fabrication process information and reticle information is processed using design rules to obtain a design map with a spatially varying overlay error budget that defines a localized tolerance to overlay errors for different spatial locations on the design map. This spatially varying overlay error budget can be used to disposition wafers. For example, overlay information obtained from measured metrology targets on a fabricated wafer are compared with the spatially varying overlay error budget to determine if the wafer overlay satisfies the required specification.
    • 本发明是一种用于生成具有空间变化的重叠误差预算的设计规则图的方法。 此外,可以采用空间上可变的重叠误差预算来确定晶片是否符合规格制造。 在一种方法中,使用设计规则处理包含制造过程信息和掩模版信息的设计数据文件,以获得具有空间上变化的重叠误差预算的设计图,该设计图定义了设计图上不同空间位置的重叠误差的局部容差。 这种空间上可变的重叠误差预算可用于配置晶片。 例如,将从制造的晶片上的测量的测量目标获得的覆盖信息与空间上变化的重叠误差预算进行比较,以确定晶片覆盖是否满足要求的规范。
    • 20. 发明申请
    • INSPECTION GUIDED OVERLAY METROLOGY
    • 检查指导覆盖度量
    • WO2011085255A3
    • 2011-11-10
    • PCT/US2011020587
    • 2011-01-07
    • KLA TENCOR CORPCHANG ELLISWIDMANN AMIRPARK ALLEN
    • CHANG ELLISWIDMANN AMIRPARK ALLEN
    • H01L21/66
    • G01N21/9501G01N21/95607G01N2021/8822G03F7/70633G03F7/7065H01L22/12H01L2924/0002H01L2924/00
    • Inspection guided overlay metrology may include performing a pattern search in order to identify a predetermined pattern on a semiconductor wafer, generating a care area for all instances of the predetermined pattern on the semiconductor wafer, identifying defects within generated care areas by performing an inspection scan of each of the generated care areas, wherein the inspection scan includes a low-threshold or a high sensitivity inspection scan, identifying overlay sites of the predetermined pattern of the semiconductor wafer having a measured overlay error larger than a selected overlay specification utilizing a defect inspection technique, comparing location data of the identified defects of a generated care area to location data of the identified overlay sites within the generated care area in order to identify one or more locations wherein the defects are proximate to the identified overlay sites, and generating a metrology sampling plan based on the identified locations.
    • 检查引导覆盖度量可以包括执行图案搜索以便识别半导体晶片上的预定图案,为半导体晶片上的预定图案的所有实例生成护理区域,通过执行检查扫描来检查所产生的护理区域内的缺陷 每个生成的护理区域,其中检查扫描包括低阈值或高灵敏度检查扫描,识别具有大于使用缺陷检查技术的所选覆盖规格的测量覆盖误差的半导体晶片的预定图案的覆盖位置 将生成的护理区域的所识别的缺陷的位置数据与生成的护理区域内的所识别的覆盖位置的位置数据进行比较,以便识别其中缺陷接近所识别的覆盖位置的一个或多个位置,以及生成计量取样 基于确定的位置进行计划。