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11. 发明授权

US07462982B2 Flat panel display using silicon light-emitting device 有权
标题翻译：平板显示器采用硅发光器件
公开(公告)号：US07462982B2
公开(公告)日：2008-12-09
申请号：US10752560
申请日：2004-01-08
申请人： Byoung-lyong Choi , Eun-kyung Lee , Jun-young Kim
发明人： Byoung-lyong Choi , Eun-kyung Lee , Jun-young Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/156
摘要： A flat panel display is provided. The flat panel display includes a silicon light-emitting device panel having a two-dimensional array of silicon light-emitting devices formed on an n- or p-type silicon-based substrate, and a fluorescent layer formed on the front surface of the silicon light-emitting device panel and emitting visible light after being excited by light emitted from the silicon light-emitting devices, wherein each of the silicon light-emitting devices comprises: a doping region formed on a surface of the substrate in such a way that the substrate is doped with a predetermined dopant of the opposite type to the substrate to a depth so that recombination of electron-hole pairs by quantum confinement effect at a p-n junction leads to light emission; and electrodes patterned on the substrate to allow the silicon light-emitting devices to emit light according to an image signal. The flat panel display includes the low-priced silicon light-emitting device panel having a two dimensional array of the silicon light-emitting devices formed on the inexpensive silicon-based substrate through series semiconductor manufacture processes. Therefore, the flat panel display can be manufactured at low cost. Furthermore, unlike a plasma display panel, a high voltage or a gas sealing process for discharge is not required, thereby increasing stability and reliability.
摘要翻译：提供平板显示器。平板显示器包括具有形成在n型或p型硅基衬底上的硅发光器件的二维阵列的硅发光器件面板和形成在硅的前表面上的荧光层发光器件面板，并且在从所述硅发光器件发射的光激发之后发射可见光，其中每个所述硅发光器件包括：在所述衬底的表面上形成的掺杂区域，衬底以与衬底相反的类型的预定掺杂剂掺杂到深度，使得通过在pn结处的量子限制效应的电子 - 空穴对的复合导致发光; 以及在基板上图案化的电极，以允许硅发光器件根据图像信号发光。平板显示器包括具有通过串联半导体制造工艺在便宜的硅基基板上形成的硅发光器件的二维阵列的低价硅发光器件面板。因此，可以以低成本制造平板显示器。此外，与等离子体显示面板不同，不需要用于放电的高电压或气体密封处理，从而提高稳定性和可靠性。

12. 发明授权

US07453097B2 Nanowire light emitting device and method of fabricating the same 失效
标题翻译：纳米线发光器件及其制造方法
公开(公告)号：US07453097B2
公开(公告)日：2008-11-18
申请号：US11100376
申请日：2005-04-07
申请人： Young-gu Jin , Sung-hoon Lee , Hyo-sug Lee , Byoung-lyong Choi , Jong-seob Kim
发明人： Young-gu Jin , Sung-hoon Lee , Hyo-sug Lee , Byoung-lyong Choi , Jong-seob Kim
IPC分类号： H01L33/00 , H01L51/50
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/08 , H01L33/18
摘要： A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.
摘要翻译：提供一种纳米线发光器件及其制造方法。纳米线发光器件包括在衬底上的第一导电层，第一导电层上的多个纳米线，每个纳米线具有p型掺杂部分和两端的n型掺杂部分， p型掺杂部分和n型掺杂部分，以及形成在纳米线上的第二导电层。掺杂部分通过在其圆周附近吸附分子而形成。

13. 发明申请

US20080227230A1 Quantum dot vertical cavity surface emitting laser and fabrication method of the same 审中-公开
标题翻译：量子点垂直腔表面发射激光器及其制作方法相同
公开(公告)号：US20080227230A1
公开(公告)日：2008-09-18
申请号：US12081367
申请日：2008-04-15
申请人： Eun-kyung Lee , Byoung-lyong Choi
发明人： Eun-kyung Lee , Byoung-lyong Choi
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/041 , H01S5/18 , H01S5/34
摘要： A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed of nano-particle type group II-VI compound semiconductor quantum dots on the ETL, a hole transport layer (HTL) formed on the EML, and an upper DBR mirror formed on the HTL.
摘要翻译：提供量子点垂直容量表面发射激光器（QD-VCSEL）及其制造方法。 QD-VCSEL包括基板，形成在基板上的下分布式布拉格反射镜（DBR）反射镜，形成在下DBR反射镜上的电子传输层（ETL），由纳米颗粒型II组形成的发射层（EML） -VI化合物半导体量子点，在EML上形成的空穴传输层（HTL）和形成在HTL上的上DBR反射镜。

14. 发明授权

US07253491B2 Silicon light-receiving device 失效
标题翻译：硅光接收装置
公开(公告)号：US07253491B2
公开(公告)日：2007-08-07
申请号：US10502765
申请日：2002-10-16
申请人： Eun-Kyung Lee , Byoung-Lyong Choi , Jun-Young Kim
发明人： Eun-Kyung Lee , Byoung-Lyong Choi , Jun-Young Kim
IPC分类号： H01L31/06 , H01L27/14 , H01L31/00
CPC分类号： H01L31/028 , H01L31/035281 , H01L31/068 , H01L31/103 , Y02E10/547
摘要： A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelectric conversion effect for light in a wavelength range of 100-1100 nm is generated by a quantum confinement effect in the p-n junction with the substrate. First and second electrodes are formed on the substrate so as to be electrically connected to the doped region. Due to the ultra-shallow doped region on the silicon substrate, a quantum confinement effect is generated in the p-n junction. Even though silicon is used as a semiconductor material, the quantum efficiency of the silicon light-receiving device is far higher than that of a conventional solar cell, owing to the quantum confinement effect. The silicon light-receiving device can also be formed to absorb light in a particular or large wavelength band, and used as a solar cell.
摘要翻译：提供硅光接收装置。在该器件中，衬底基于n型或p型硅。掺杂区域在衬底的一侧上与衬底的掺杂剂类型相反的掺杂剂超浅掺杂，使得通过量子限制效应产生在100-1100nm的波长范围内的光的光电转换效应在与基板的pn结中。第一和第二电极形成在衬底上，以便与掺杂区电连接。由于硅衬底上的超浅掺杂区域，在p-n结中产生量子限制效应。即使使用硅作为半导体材料，由于量子限制效应，硅光接收装置的量子效率远远高于常规太阳能电池的量子效率。硅光接收装置也可以形成为吸收特定或大波长带中的光，并用作太阳能电池。

15. 发明申请

US20070138460A1 LIGHT EMITTING DEVICE WITH THREE-DIMENSIONAL STRUCTURE AND FABRICATION METHOD THEREOF 失效
标题翻译：具有三维结构的发光装置及其制造方法
公开(公告)号：US20070138460A1
公开(公告)日：2007-06-21
申请号：US11534710
申请日：2006-09-25
申请人： Jae Young CHOI , Byoung Lyong CHOI , Dong Kee YI , Kwang Soo SEOL , Seong Jae CHOI
发明人： Jae Young CHOI , Byoung Lyong CHOI , Dong Kee YI , Kwang Soo SEOL , Seong Jae CHOI
IPC分类号： H01L29/06
CPC分类号： H01L29/06 , B82Y20/00 , B82Y30/00 , H01L51/502 , H01L51/52
摘要： A three-dimensional light emitting device and a method for fabricating the light emitting device are provided. The light emitting device comprises a substrate and a semiconductor nanoparticle layer wherein the substrate is provided with a plurality of three-dimensional recesses and the surface having the recesses is coated with semiconductor nanoparticles. According to the three-dimensional light emitting device, the formation of the semiconductor nanoparticles on the surface of the recessed substrate increases the light emitting area and enhances the luminescence intensity, leading to an increase in the amount of light emitted from the light emitting device per unit area. Therefore, the three-dimensional light emitting device has the advantage of improved luminescence efficiency.
摘要翻译：提供三维发光器件和制造发光器件的方法。发光器件包括衬底和半导体纳米颗粒层，其中衬底设置有多个三维凹槽，并且具有凹陷的表面涂覆有半导体纳米颗粒。根据三维发光装置，在凹陷基板的表面上形成半导体纳米颗粒增加发光面积并增强发光强度，导致从发光装置发射的光量增加单位面积因此，三维发光装置具有提高发光效率的优点。

16. 发明授权

US07157741B2 Silicon optoelectronic device and optical signal input and/or output apparatus using the same 有权
标题翻译：硅光电器件和使用其的光信号输入和/或输出设备
公开(公告)号：US07157741B2
公开(公告)日：2007-01-02
申请号：US10784967
申请日：2004-02-25
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L31/153
CPC分类号： H01L27/156 , H01L31/125 , H01L33/34
摘要： A silicon optoelectronic device and an optical transceiver, wherein the silicon optoelectronic device includes an n- or p-type silicon-based substrate and a doped region formed in a first surface of the substrate and doped to an opposite type from that of the substrate. The doped region provides photoelectrical conversion. The silicon optoelectronic device includes a light-emitting device section and a light-receiving device section. These sections use the doped region in common and are formed in the first surface of the substrate. The silicon optoelectronic device has an internal amplifying circuit, can selectively perform emission and detection of light, and can control the duration of emission and detection of light.
摘要翻译：硅光电子器件和光收发器，其中硅光电器件包括n型或p型硅基衬底和形成在衬底的第一表面中并掺杂成与衬底相反的类型的掺杂区域。掺杂区域提供光电转换。硅光电子器件包括发光器件部分和光接收器件部分。这些部分共同使用掺杂区域并形成在衬底的第一表面中。硅光电子器件具有内部放大电路，可以选择性地执行光的发射和检测，并且可以控制发光和光的检测持续时间。

17. 发明授权

US07125797B2 Contact structure of semiconductor device and method of forming the same 有权
标题翻译：半导体器件的接触结构及其形成方法
公开(公告)号：US07125797B2
公开(公告)日：2006-10-24
申请号：US10915538
申请日：2004-08-11
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/823814 , H01L21/26533 , H01L21/28506 , H01L21/823878 , H01L24/05 , H01L29/0847 , H01L29/78 , H01L2924/13091 , H01L2924/00
摘要： A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.
摘要翻译：半导体的接触结构包括衬底，与衬底的极性相反的导电掺杂层，在衬底中形成导电掺杂层，形成在导电掺杂层上的导电层和形成的绝缘掺杂层在衬底中的导电掺杂层下面。

18. 发明授权

US07112862B2 Light emitting and/or detecting device and method of manufacturing the same 有权
标题翻译：发光和/或检测装置及其制造方法
公开(公告)号：US07112862B2
公开(公告)日：2006-09-26
申请号：US10965203
申请日：2004-10-15
申请人： Eun-kyung Lee , Byoung-lyong Choi , Jun-young Kim
发明人： Eun-kyung Lee , Byoung-lyong Choi , Jun-young Kim
IPC分类号： H01L31/00
CPC分类号： H01L31/107 , H01L31/105 , H01L33/34
摘要： A light emitting and detecting device and a method of manufacturing the same are provided. The method includes forming an insulating layer on a substrate doped with an n-type dopant or a p-type dopant, and removing a portion of the insulating layer to expose a predetermined area of the substrate; forming a doping layer doped with an opposite dopant to the dopant of the substrate by applying a dopant on the exposed area of the substrate and heat treating the substrate to create a light conversion effect in a p-n junction between the substrate and the doping layer; and forming first and second electrodes on the substrate to electrically connect the doping layer. Thus, it is possible to control the diffusion depth of the doping layer with opposite dopant to the substrate in the substrate.
摘要翻译：提供一种发光和检测装置及其制造方法。该方法包括在掺杂有n型掺杂剂或p型掺杂剂的衬底上形成绝缘层，以及去除绝缘层的一部分以暴露衬底的预定区域; 通过在所述衬底的所述暴露区域上施加掺杂剂并对所述衬底进行热处理以在所述衬底和所述掺杂层之间的p-n结中产生光转换效应，从而在衬底的掺杂剂上形成掺杂有相反掺杂剂的掺杂层; 以及在所述衬底上形成第一和第二电极以电连接所述掺杂层。因此，可以将衬底中与衬底相反的掺杂剂的掺杂层的扩散深度控制。

19. 发明申请

US20050227391A1 Nanowire light emitting device and method of fabricating the same 失效
标题翻译：纳米线发光器件及其制造方法
公开(公告)号：US20050227391A1
公开(公告)日：2005-10-13
申请号：US11100377
申请日：2005-04-07
申请人： Young-gu Jin , Sung-hoon Lee , Hyo-sug Lee , Byoung-lyong Choi , Jong-seob Kim
发明人： Young-gu Jin , Sung-hoon Lee , Hyo-sug Lee , Byoung-lyong Choi , Jong-seob Kim
IPC分类号： H05B33/00 , C09K11/00 , C09K11/54 , H01L21/00 , H01L21/22 , H01L21/38 , H01L33/26 , H01L51/00 , H01L51/30
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/08 , H01L33/38 , H01L51/0038 , H01L51/502 , H01L51/5032 , H01L2251/303
摘要： A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.
摘要翻译：提供一种纳米线发光器件及其制造方法。纳米线发光器件包括形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线具有n型掺杂部分和p型掺杂部分，发光层在n型掺杂部分和p型掺杂部分之间，分别填充与p型掺杂部分和n型掺杂部分相对应的空间的第一和第二导电有机聚合物和形成在p型掺杂部分上的第二导电层纳米线有机聚合物通过从纳米线的相应表面接收电子或通过向纳米线的表面提供电子来掺杂纳米线的相应表面。

20. 发明申请

US20050224780A1 Nanowire light emitting device 审中-公开
标题翻译：纳米线发光装置
公开(公告)号：US20050224780A1
公开(公告)日：2005-10-13
申请号：US11100455
申请日：2005-04-07
申请人： Young-gu Jin , Sung-hoon Lee , Hyo-sug Lee , Byoung-lyong Choi , Jong-seob Kim
发明人： Young-gu Jin , Sung-hoon Lee , Hyo-sug Lee , Byoung-lyong Choi , Jong-seob Kim
IPC分类号： H01L29/06 , H01L33/06 , H01L33/08 , H01L33/18
CPC分类号： H01L33/08 , B82Y10/00 , H01L33/06 , H01L33/18 , Y10S977/762
摘要： A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.
摘要翻译：提供了一种纳米线发光器件。纳米线发光器件包括衬底，形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线包括p掺杂部分和n掺杂部分， p掺杂部分和n掺杂部分，形成在纳米线上的第二导电层和其中嵌入发光材料的绝缘聚合物，填充纳米线之间的空间。从发光层发出的光的颜色根据发光材料而变化。

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