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11. 发明申请

WO2009154473A3 COATING FOR THIN-FILM SOLAR CELLS 审中-公开
标题翻译：用于薄膜太阳能电池的涂层
公开(公告)号：WO2009154473A3
公开(公告)日：2010-07-08
申请号：PCT/NO2009000227
申请日：2009-06-17
申请人： RENEWABLE ENERGY CORP ASA , BASORE PAUL ALAN , BENTZEN ANDREAS , SAUAR ERIK
发明人： BASORE PAUL ALAN , BENTZEN ANDREAS , SAUAR ERIK
IPC分类号： H01L27/142 , H01L31/052
CPC分类号： H01L31/056 , H01L31/046 , Y02E10/52
摘要： This invention relates to a method for producing thin film solar cells with a back-side reflective layer, wherein the solar module is a silicon thin film device placed in-between a back side planar substrate and a front side planar glass superstrate placed in parallel and a distance from the back side planar substrate, wherein the silicon thin film device comprises in successive order from the front side: a front side transparent conductive (TCO) layer, a multi junction thin-film solar conversion layer comprising amorphous and microcrystalline silicon or alloys thereof, a back side TCO-layer, a diffuse reflective layer with one or more local through-going apertures, and a metal layer covering the reflective layer and which is in contact with the back side TCO-layer through the one or more apertures in the reflective layer. The invention also relates to a method for forming the solar cell.
摘要翻译：本发明涉及一种具有背面反射层的薄膜太阳能电池的制造方法，其特征在于，太阳能电池组件是设置在背面平面基板与平行放置的前侧平面玻璃盖板之间的硅薄膜元件，距离背面平面基板的距离，其中所述硅薄膜器件从正面依次依次包括：正面透明导电层（TCO）层，包含非晶和微晶硅或合金的多结薄膜太阳能转换层背面TCO层，具有一个或多个局部贯通孔的漫反射层和覆盖反射层的金属层，并且通过一个或多个孔中的一个或多个孔与后侧TCO层接触反射层。本发明还涉及形成太阳能电池的方法。

12. 发明申请

WO2008039078A3 BACK CONTACTED SOLAR CELL 审中-公开
标题翻译：返回联系太阳能电池
公开(公告)号：WO2008039078A3
公开(公告)日：2008-10-16
申请号：PCT/NO2007000339
申请日：2007-09-27
申请人： RENEWABLE ENERGY CORP ASA , SAUAR ERIK , BENTZEN ANDREAS
发明人： SAUAR ERIK , BENTZEN ANDREAS
IPC分类号： H01L31/0224
CPC分类号： H01L31/02167 , H01L31/022441 , H01L31/0682 , Y02E10/547
摘要： This invention relates to a cost effective method of producing a back contacted silicon solar cell and the cell made by the method, where the method comprises applying a silicon substrate, wafer or thin film, doped on the back side with alternating P-type and N-type conductivity in an interdigitated pattern and optionally a layer of either P- or N-type on the front side of the wafer, depositing one or more surface passivation layers on both sides of the substrate, creating openings in the surface passivation layers on the back side of the substrate, depositing a metallic layer covering the entire back side and which fills the openings in the surface passivation layers, and creating openings in the deposited metallic layer such that electric insulated contacts with the doped regions on the back side of the substrate is obtained.
摘要翻译：本发明涉及一种生产背面接触的硅太阳能电池的成本有效的方法以及通过该方法制造的电池，其中该方法包括将交替的P型和N型掺杂在背面的硅衬底，晶片或薄膜交叉图案中的导电类型和任选的在晶片正面上的P-型或N-型层的层，在衬底的两侧上沉积一个或多个表面钝化层，在衬底的表面钝化层上产生开口沉积覆盖整个背面的金属层，并填充表面钝化层中的开口，并在沉积的金属层中形成开口，使得电绝缘地与衬底的背侧上的掺杂区域接触获得。

13. 发明申请

WO2008039078A2 BACK CONTACTED SOLAR CELL 审中-公开
标题翻译：返回接触式太阳能电池
公开(公告)号：WO2008039078A2
公开(公告)日：2008-04-03
申请号：PCT/NO2007/000339
申请日：2007-09-27
申请人： RENEWABLE ENERGY CORPORATION ASA , SAUAR, Erik , BENTZEN, Andreas
发明人： SAUAR, Erik , BENTZEN, Andreas
IPC分类号： H01L31/0224
CPC分类号： H01L31/02167 , H01L31/022441 , H01L31/0682 , Y02E10/547
摘要： This invention relates to a cost effective method of producing a back contacted silicon solar cell and the cell made by the method, where the method comprises applying a silicon substrate, wafer or thin film, doped on the back side with alternating P-type and N-type conductivity in an interdigitated pattern and optionally a layer of either P- or N-type on the front side of the wafer, depositing one or more surface passivation layers on both sides of the substrate, creating openings in the surface passivation layers on the back side of the substrate, depositing a metallic layer covering the entire back side and which fills the openings in the surface passivation layers, and creating openings in the deposited metallic layer such that electric insulated contacts with the doped regions on the back side of the substrate is obtained.
摘要翻译：本发明涉及一种制造背面接触式硅太阳能电池的成本有效的方法以及通过该方法制造的电池，其中该方法包括施加掺杂在背面上的硅衬底，晶片或薄膜在交叉的图案中交替地具有P型和N型导电性，并且可选地在晶片的正面上具有P型或N型层，在衬底的两侧上沉积一个或多个表面钝化层，从而形成在衬底背面上的表面钝化层中形成开口，沉积覆盖整个背面并填充表面钝化层中的开口的金属层，并且在沉积的金属层中形成开口，使得电绝缘与掺杂获得衬底背面的区域。

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