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11. 发明申请

WO2010048237A2 ULTRAVIOLET REFLECTOR WITH COOLANT GAS HOLES AND METHOD 审中-公开
标题翻译：具有冷却剂气体孔的紫外线反射器和方法
公开(公告)号：WO2010048237A2
公开(公告)日：2010-04-29
申请号：PCT/US2009/061391
申请日：2009-10-20
申请人： APPLIED MATERIALS, INC. , YANG, Yao-Hung , NGUYEN, Tuan Anh , BALUJA, Sanjeev , KASZUBA, Andrzej , ROCHA, Juan Carlos , NOWAK, Thomas , HO, Dustin W.
发明人： YANG, Yao-Hung , NGUYEN, Tuan Anh , BALUJA, Sanjeev , KASZUBA, Andrzej , ROCHA, Juan Carlos , NOWAK, Thomas , HO, Dustin W.
IPC分类号： H01L21/324 , H01L21/205
CPC分类号： G21K1/062 , B82Y10/00 , G21K2201/064 , G21K2201/065 , G21K2201/067
摘要： A reflector for an ultraviolet lamp can be used in a substrate processing apparatus. The reflector comprises a longitudinal strip extending the length of the ultraviolet lamp. The longitudinal strip has a curved reflective surface and comprises a plurality of through holes to direct a coolant gas toward the ultraviolet lamp. A chamber that uses an ultraviolet lamp module with the reflector, and a method of ultraviolet treatment are also described.
摘要翻译：用于紫外线灯的反射器可用于基板处理设备中。反射器包括延伸紫外线灯长度的纵向条。纵向条具有弯曲的反射表面并且包括多个通孔以将冷却剂气体导向紫外线灯。还描述了使用具有反射器的紫外线灯模块的室和紫外线处理方法。

12. 发明申请

WO2014003995A1 ENHANCEMENT IN UV CURING EFFICIENCY USING OXYGEN-DOPED PURGE FOR ULTRA LOW-K DIELECTRIC FILM 审中-公开
标题翻译：在超低压电介质膜中使用氧化浸渍的UV固化效率的增强
公开(公告)号：WO2014003995A1
公开(公告)日：2014-01-03
申请号：PCT/US2013/044130
申请日：2013-06-04
申请人： APPLIED MATERIALS, INC. , CHHABRA, Mahendra , HENDRICKSON, Scott A. , BALUJA, Sanjeev , KIYOHARA, Tsutomu , ROCHA-ALVAREZ, Juan Carlos , DEMOS, Alexandros T.
发明人： CHHABRA, Mahendra , HENDRICKSON, Scott A. , BALUJA, Sanjeev , KIYOHARA, Tsutomu , ROCHA-ALVAREZ, Juan Carlos , DEMOS, Alexandros T.
IPC分类号： H01L21/3115 , H01L21/324
CPC分类号： C23C16/4405 , B05D3/066 , C23C14/00 , C23C16/56 , G02B1/00 , H01L21/02126 , H01L21/02203 , H01L21/02337 , H01L21/02348 , H01L21/67115 , H01L21/6719 , H01L21/76825
摘要： Embodiments of the invention provide methods for curing an ultra low-k dielectric film within a UV processing chamber. In one embodiment, the method includes depositing an ultra low-k dielectric layer on a substrate in a deposition chamber, and subjecting the deposited ultra low-k dielectric layer to a UV curing processes in a UV processing chamber. The method includes stabilizing the UV processing chamber by flowing an oxygen gas and a purge gas into the UV processing chamber at a flow ratio of about 1:50000 to about 1:100. While flowing the oxygen-doped purge gas, the substrate is exposed to UV radiation to cure the deposited ultra low-k dielectric layer. The inventive oxygen-doped purge curing process provides an alternate pathway to build silicon-oxygen network of the ultra low-k dielectric material, thereby accelerating cross-linking efficiency without significantly affecting the film properties of the deposited ultra low-k dielectric material.
摘要翻译：本发明的实施例提供了在UV处理室内固化超低k电介质膜的方法。在一个实施例中，该方法包括在沉积室中的衬底上沉积超低k电介质层，以及在UV处理室中对沉积的超低k电介质层进行UV固化过程。该方法包括通过以约1：50000至约1:100的流量比将氧气和净化气体流入UV处理室来稳定UV处理室。在流过氧掺杂的净化气体的同时，衬底暴露于UV辐射以固化沉积的超低k电介质层。本发明的氧掺杂清洗固化方法提供构建超低k电介质材料的硅 - 氧网络的替代途径，从而加速交联效率而不显着影响沉积的超低k电介质材料的膜性质。

13. 发明申请

WO2013162848A1 METHOD FOR UV BASED SILYLATION CHAMBER CLEAN 审中-公开
标题翻译：紫外线基硅烷清洗方法
公开(公告)号：WO2013162848A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/035297
申请日：2013-04-04
申请人： APPLIED MATERIALS, INC. , XIE, Bo , DEMOS, Alexandros T. , HENDRICKSON, Scott A. , BALUJA, Sanjeev , ROCHA-ALVAREZ, Juan Carlos
发明人： XIE, Bo , DEMOS, Alexandros T. , HENDRICKSON, Scott A. , BALUJA, Sanjeev , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： H01L21/302 , H01L21/02
CPC分类号： B08B7/0021 , B08B7/0035 , C23C16/4405 , H01J37/3244 , H01J37/32862
摘要： Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.
摘要翻译：本发明的实施例通常提供用于清洁UV处理室的方法。在一个实施方案中，该方法包括使含氧气体通过形成在UV透明气体分配喷头中的多个通道流入位于UV透明气体分配喷头和位于热处理室内的基板支架之间的处理区域中，在包含低压级和高压级的压力方案下将含氧气体暴露于紫外线辐射以产生活性氧自由基，以及从存在于热处理室中的室组分的暴露表面去除不想要的残留物或沉积物使用活性氧自由基。

14. 发明申请

WO2012074816A2 METHOD AND APPARATUS FOR MODULATING WAFER TREATMENT PROFILE IN UV CHAMBER 审中-公开
标题翻译：用于调节UV室中的水处理轮廓的方法和装置
公开(公告)号：WO2012074816A2
公开(公告)日：2012-06-07
申请号：PCT/US2011/061703
申请日：2011-11-21
申请人： APPLIED MATERIALS, INC. , BALUJA, Sanjeev , ROCHA-ALVAREZ, Juan Carlos , DEMOS, Alexandros T.
发明人： BALUJA, Sanjeev , ROCHA-ALVAREZ, Juan Carlos , DEMOS, Alexandros T.
IPC分类号： H01L21/26 , H01L21/3105
CPC分类号： G02B5/22 , G02B5/208 , H01L21/67115
摘要： A method and apparatus for providing a uniform UV radiation irradiance profile across a surface of a substrate is provided. In one embodiment, a substrate processing tool includes a processing chamber defining a processing region, a substrate support for supporting a substrate within the processing region, an ultraviolet (UV) radiation source spaced apart from the substrate support and configured to transmit ultraviolet radiation toward the substrate positioned on the substrate support, and a light transmissive window positioned between the UV radiation source and the substrate support, the light transmissive window having an optical film layer coated thereon. In one example, the optical film layer has a non-uniform thickness profile in a radial direction, wherein a thickness of the optical film layer at the peripheral area of the light transmissive window is relatively thicker than at the center region of the optical film layer.
摘要翻译：提供了一种用于在衬底的表面上提供均匀的UV辐射辐照度分布的方法和装置。在一个实施例中，衬底处理工具包括限定处理区域的处理室，用于支撑处理区域内的衬底的衬底支撑件，与衬底支撑件间隔开并且被配置成向衬底支撑件发射紫外线辐射的紫外线（UV）辐射源位于基板支撑件上的基板和位于UV辐射源和基板支撑件之间的透光窗口，透光窗口具有涂覆在其上的光学膜层。在一个示例中，光学膜层在径向上具有不均匀的厚度分布，其中在透光窗的周边区域处的光学膜层的厚度比在光学膜层的中心区域处的厚度更厚。

15. 发明申请

WO2011153484A3 SILICON DIOXIDE LAYER DEPOSITED WITH BDEAS 审中-公开
标题翻译：二氧化硅二氧化硅层与BDEAS相结合
公开(公告)号：WO2011153484A3
公开(公告)日：2012-03-01
申请号：PCT/US2011039145
申请日：2011-06-03
申请人： APPLIED MATERIALS INC , LEE YONG-WON , ZUBKOV VLADIMIR , SHEK MEI-YEE , XIA LI-QUN , IYENGAR PRAHALLAD , BALUJA SANJEEV , HENDRICKSON SCOTT A , ROCHA-ALVAREZ JUAN CARLOS , NOWAK THOMAS , WITTY DERRICK R
发明人： LEE YONG-WON , ZUBKOV VLADIMIR , SHEK MEI-YEE , XIA LI-QUN , IYENGAR PRAHALLAD , BALUJA SANJEEV , HENDRICKSON SCOTT A , ROCHA-ALVAREZ JUAN CARLOS , NOWAK THOMAS , WITTY DERRICK R
IPC分类号： C23C16/04 , C23C16/44 , H01L21/205
CPC分类号： H01L21/02271 , C23C16/402 , H01L21/02164 , H01L21/0332 , H01L21/76898
摘要： A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.
摘要翻译：使用包含BDEAS和含氧气体如臭氧的工艺气体将二氧化硅层沉积到衬底上。二氧化硅层可以是包括抗蚀剂层的抗蚀刻堆叠的一部分。在另一个版本中，二氧化硅层被沉积到通孔中以形成用于通硅通孔的氧化物衬垫。

16. 发明申请

WO2009148859A3 METHOD AND APPARATUS FOR UV CURING WITH WATER VAPOR 审中-公开
标题翻译：紫外线固化用水蒸气的方法和装置
公开(公告)号：WO2009148859A3
公开(公告)日：2010-03-18
申请号：PCT/US2009045003
申请日：2009-05-22
申请人： APPLIED MATERIALS INC , HO DUSTIN W , HENDRICKSON SCOTT A , ROCHA-ALVAREZ JUAN CARLOS , BALUJA SANJEEV , NOWAK THOMAS
发明人： HO DUSTIN W , HENDRICKSON SCOTT A , ROCHA-ALVAREZ JUAN CARLOS , BALUJA SANJEEV , NOWAK THOMAS
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/02164 , H01L21/3105
摘要： Embodiments of the invention generally relate to a method and apparatus for curing dielectric material deposited in trenches or gaps in the surface of a substrate to produce a feature free of voids and seams. In one embodiment, the dielectric material is steam annealed while being exposed to ultraviolet radiation. In one embodiment, the dielectric material is further thermally annealed in a nitrogen environment.
摘要翻译：本发明的实施方案一般涉及用于固化沉积在基板表面中的沟槽或间隙中的电介质材料以产生无空隙和接缝的特征的方法和装置。在一个实施例中，电介质材料在暴露于紫外线辐射的同时进行蒸汽退火。在一个实施例中，电介质材料在氮气环境中进一步热退火。

17. 发明申请

WO2009148859A2 METHOD AND APPARATUS FOR UV CURING WITH WATER VAPOR 审中-公开
标题翻译：紫外线固化用水蒸气的方法和装置
公开(公告)号：WO2009148859A2
公开(公告)日：2009-12-10
申请号：PCT/US2009/045003
申请日：2009-05-22
申请人： APPLIED MATERIALS, INC. , HO, Dustin, W. , HENDRICKSON, Scott, A. , ROCHA-ALVAREZ, Juan, Carlos , BALUJA, Sanjeev , NOWAK, Thomas
发明人： HO, Dustin, W. , HENDRICKSON, Scott, A. , ROCHA-ALVAREZ, Juan, Carlos , BALUJA, Sanjeev , NOWAK, Thomas
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/02164 , H01L21/3105
摘要： Embodiments of the invention generally relate to a method and apparatus for curing dielectric material deposited in trenches or gaps in the surface of a substrate to produce a feature free of voids and seams. In one embodiment, the dielectric material is steam annealed while being exposed to ultraviolet radiation. In one embodiment, the dielectric material is further thermally annealed in a nitrogen environment.
摘要翻译：本发明的实施方案一般涉及用于固化沉积在基板表面中的沟槽或间隙中的电介质材料以产生无空隙和接缝的特征的方法和装置。在一个实施例中，电介质材料在暴露于紫外线辐射的同时进行蒸汽退火。在一个实施例中，电介质材料在氮气环境中进一步热退火。

18. 发明申请

WO2013169427A1 DEPOSITION OF AN AMORPHOUS CARBON LAYER WITH HIGH FILM DENSITY AND HIGH ETCH SELECTIVITY 审中-公开
标题翻译：具有高膜密度和高选择性的非晶碳层沉积
公开(公告)号：WO2013169427A1
公开(公告)日：2013-11-14
申请号：PCT/US2013/035827
申请日：2013-04-09
申请人： APPLIED MATERIALS, INC. , REILLY, Patrick , SHAIKH, Shahid , SUMMAN, Tersem , PADHI, Deenesh , BALUJA, Sanjeev , ROCHA-ALVAREZ, Juan Carlos , NOWAK, Thomas , KIM, Bok Hoen , WITTY, Derek R.
发明人： REILLY, Patrick , SHAIKH, Shahid , SUMMAN, Tersem , PADHI, Deenesh , BALUJA, Sanjeev , ROCHA-ALVAREZ, Juan Carlos , NOWAK, Thomas , KIM, Bok Hoen , WITTY, Derek R.
IPC分类号： C23C16/44 , C23C16/48 , C23C16/52
CPC分类号： H01L21/02527 , C23C16/26 , C23C16/56 , H01L21/02115 , H01L21/02274 , H01L21/02348 , H01L21/02592 , H01L21/0262 , H01L21/31144
摘要： Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200°C and about 700°C to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200°C.
摘要翻译：本文所述的实施例涉及一种用于处理衬底的方法。在一个实施方案中，该方法包括将包含烃源和稀释气体的气体混合物引入到位于处理系统内的沉积室中，在约200℃至约约200℃的温度下，从沉积室中的气体混合物产生等离子体在基板上形成低氢含量的无定形碳层，将基板转移到位于处理系统内的固化室中，而不破坏真空，并将固化室内的UV辐射暴露于高于约 200℃。

19. 发明申请

WO2012054206A3 QUARTZ SHOWERHEAD FOR NANOCURE UV CHAMBER 审中-公开
标题翻译： QUARTZ淋浴器用于纳米紫外线灯
公开(公告)号：WO2012054206A3
公开(公告)日：2012-06-21
申请号：PCT/US2011054014
申请日：2011-09-29
申请人： APPLIED MATERIALS INC , BALUJA SANJEEV , ROCHA-ALVAREZ JUAN CARLOS , DEMOS ALEXANDROS T , NOWAK THOMAS , ZHOU JIANHUA
发明人： BALUJA SANJEEV , ROCHA-ALVAREZ JUAN CARLOS , DEMOS ALEXANDROS T , NOWAK THOMAS , ZHOU JIANHUA
IPC分类号： H01L21/3105 , H01L21/263
CPC分类号： C23C16/56 , C23C16/4405 , C23C16/45565 , C23C16/482 , H01L21/6719 , H01L21/67742 , Y10T137/0391
摘要： Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.
摘要翻译：本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒并且在上下处理区域之间具有一个或多个透明花洒通道。处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。

20. 发明申请

WO2011017060A3 DUAL TEMPERATURE HEATER 审中-公开
公开(公告)号：WO2011017060A3
公开(公告)日：2011-02-10
申请号：PCT/US2010/043274
申请日：2010-07-26
申请人： APPLIED MATERIALS, INC. , DU BOIS, Dale R. , ROCHA-ALVAREZ, Juan Carlos , BALUJA, Sanjeev , BALASUBRAMANIAN, Ganesh , YAP, Lipyeow , ZHOU, Jianhua , NOWAK, Thomas
发明人： DU BOIS, Dale R. , ROCHA-ALVAREZ, Juan Carlos , BALUJA, Sanjeev , BALASUBRAMANIAN, Ganesh , YAP, Lipyeow , ZHOU, Jianhua , NOWAK, Thomas
IPC分类号： H01L21/683 , H01L21/02 , H01L21/205
摘要： A method and apparatus for heating a substrate in a chamber are provided. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

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