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11. 发明授权

US5867888A Magnetic head/silicon chip integration method 失效
标题翻译：磁头/硅芯片集成方法
公开(公告)号：US5867888A
公开(公告)日：1999-02-09
申请号：US728289
申请日：1996-10-08
申请人： Steven H. Voldman , Albert J. Wallash
发明人： Steven H. Voldman , Albert J. Wallash
IPC分类号： B81B7/00 , G11B5/11 , G11B5/31 , G11B5/40 , G11B5/60 , H01L21/28 , H01L21/301 , H01L21/304 , H01L21/48
CPC分类号： G11B5/40 , G11B5/11 , G11B5/3133 , G11B5/3163 , G11B5/3169 , G11B5/3173 , G11B5/6005 , Y10T29/49041
摘要： A method of integrating slider/head assemblies with silicon chips. The method facilitates the integration of silicon chips containing desirable circuits such as electrostatic discharge protection with slider/head designs such that the slider/head design may be selected independently of the type of silicon chip as long as compatible dimensions are used for each. First a bar of N slider/head assemblies is formed. A bar of N silicon chips is formed and then coupled to the bar of N slider/head assemblies to form an integrated bar of N slider/head/silicon chip units. Leads between the silicon chips and the slider/head assemblies are established. Finally, the integrated bar of N slider/head/silicon chip units is diced into N individual slider/head/silicon chip units. The method also includes the step of lapping the bar of N slider/head assemblies to form magnetic head air bearing surfaces and machining the bar of N slider/head assemblies to decrease the weight of the N slider/head assemblies.
摘要翻译：滑块/磁头组件与硅芯片集成的方法。该方法有助于将包含所需电路（例如，静电放电保护）与滑块/磁头设计的硅芯片的集成，使得滑块/磁头设计可以独立于硅芯片的类型进行选择，只要使用兼容的尺寸即可。首先形成一个N个滑块/头组件。形成一块N个硅芯片，然后连接到N个滑动器/头部组件的杆，以形成N个滑块/头/硅芯片单元的集成棒。硅芯片和滑块/头组件之间的引线被建立。最后，N个滑块/头/硅芯片单元的集成棒切成N个单独的滑块/头/硅芯片单元。该方法还包括研磨N滑块/头部组件的杆以形成磁头空气轴承表面并加工N个滑动器/头部组件的杆以减小N个滑块/头部组件的重量的步骤。

12. 发明授权

US5777829A Method and apparatus for providing electrostatic discharge protection for an inductive coil of a magnetic transducer 失效
标题翻译：用于为磁换能器的感应线圈提供静电放电保护的方法和装置
公开(公告)号：US5777829A
公开(公告)日：1998-07-07
申请号：US728297
申请日：1996-10-08
申请人： Steven H. Voldman , Albert J. Wallash
发明人： Steven H. Voldman , Albert J. Wallash
IPC分类号： G11B5/17 , G11B5/31 , G11B5/40 , G11B5/10
CPC分类号： G11B5/40 , G11B5/3103 , G11B5/314 , G11B5/17 , G11B5/3143
摘要： Electrostatic discharge protection for an inductive coil in a magnetic head of a disk drive. Structures are provided to dissipate electrostatic charges which may arise between the leads of the inductive coil or between the inductive coil and one of the pole pieces in a magnetic head. An electrostatic discharge element is coupled to the inductive coil for dissipating electrostatic charge from the inductive coil. The electrostatic discharge element may include a spark gap, a diode circuit, a MOSFET, a silicon controlled rectifier or a bleed transistor circuit. The electrostatic discharge element may include a first electrostatic discharge element coupled between the first turn of the inductive coil and the magnetic yoke and a second electrostatic discharge element coupled between the magnetic yoke and the last turn of the inductive coil. The magnetic yoke or pole piece may include an upper and a lower magnetic pole with mirrored protection circuits provided for each pole.
摘要翻译：用于磁盘驱动器磁头中的感应线圈的静电放电保护。提供结构以消散可能在感应线圈的引线之间或感应线圈与磁头中的一个极片之间产生的静电电荷。静电放电元件耦合到感应线圈，以从感应线圈消散静电电荷。静电放电元件可以包括火花隙，二极管电路，MOSFET，可控硅整流器或放电晶体管电路。静电放电元件可以包括耦合在感应线圈的第一匝和磁轭之间的第一静电放电元件和耦合在磁轭和感应线圈的最后匝之间的第二静电放电元件。磁轭或极片可以包括上磁极和下磁极，每个磁极设有镜像保护电路。

13. 发明授权

US07595949B1 Method for active cancellation of write-to-read crosstalk 有权
标题翻译：主动取消写入到串扰的方法
公开(公告)号：US07595949B1
公开(公告)日：2009-09-29
申请号：US11001730
申请日：2004-12-02
申请人： Albert J. Wallash , Ferruh Gocemen , Jason Wolfson
发明人： Albert J. Wallash , Ferruh Gocemen , Jason Wolfson
IPC分类号： G11B5/09
CPC分类号： G11B5/40 , G11B5/115 , G11B5/3967 , G11B20/10009 , G11B2220/2516
摘要： A method for preventing electrical overstress from interfering with a magnetic read-write device by identifying one or more characteristic functions of the device that characterize electrical overstress, generating a wave form representative of the electrical overstress by using the one or more characteristic functions and enabling the generated wave form to be combined with a read signal to counteract the electrical overstress. The method can be implemented with a crosstalk cancellation circuit that includes a coupler filter configured to receive signals from the write driver, a differentiator to differentiate the signal, a gain adjust coupled to the coupler filter configured to adjust gain on the received signal, a phase adjust configured to adjust the phase to match the crosstalk, and an inverter coupled to invert the matched signal to enable cancellation of the crosstalk. The cancellation circuit can include two components, a first component that addresses common mode crosstalk and a second component that addresses differential mode crosstalk. The combination is added and inverted to enable cancellation of crosstalk in read components of a device.
摘要翻译：一种用于通过识别表征电过应力的装置的一个或多个特征功能来防止电过应力干扰磁读写装置的方法，通过使用一个或多个特征功能产生表示电过载的波形，并使能产生的波形与读信号相结合以抵消电应力。该方法可以用串扰消除电路实现，该串扰消除电路包括被配置为从写入驱动器接收信号的耦合器滤波器，用于区分信号的微分器，耦合到耦合器滤波器的增益调整器，其配置成调整接收信号的增益，相位调整配置以调整相位以匹配串扰，并且反相器耦合以反转匹配的信号以实现串扰的消除。消除电路可以包括两个组件，即解决共模串扰的第一组件和解决差模串扰的第二组件。该组合被添加和反转以便能够消除设备的读取组件中的串扰。

14. 发明授权

US07474510B1 Disk drive head reset for parked head using closely spaced magnet 有权
标题翻译：使用紧密间隔的磁铁的磁盘驱动器磁头复位
公开(公告)号：US07474510B1
公开(公告)日：2009-01-06
申请号：US11031333
申请日：2005-01-07
申请人： Lydia Baril , Albert J Wallash
发明人： Lydia Baril , Albert J Wallash
IPC分类号： G11B5/54 , G11B21/22
CPC分类号： G11B21/12 , G11B5/3903 , G11B5/465 , G11B2005/001
摘要： A disk drive includes a magnet (152) for resetting a corresponding head (138). The magnet (152) is located on or close to a load/unload ramp (140′) that is used to park the head (138), such that the magnet (152) is spaced from its corresponding parked head (138) by distance of no more than about 1 millimeter when the head (138) is parked. The magnet (152) may be either a permanent magnet or an electromagnetic which induces a magnetic field upon the head (138) to reset its magnetization.
摘要翻译：磁盘驱动器包括用于复位相应磁头（138）的磁体（152）。磁体（152）位于或靠近用于停放头部（138）的装载/卸载斜坡（140'），使得磁体（152）与其对应的停放头部（138）间隔距离当头部（138）停放时不大于约1毫米。磁体（152）可以是在磁头（138）上引起磁场以重置其磁化的永磁体或电磁体。

15. 发明授权

US5768068A Head/suspension design having fewer signal wires and making the same 失效
标题翻译：头/悬挂设计具有较少的信号线并使其相同
公开(公告)号：US5768068A
公开(公告)日：1998-06-16
申请号：US728290
申请日：1996-10-08
申请人： Eric A. Eckberg , Robert R. Suchomel , Albert J. Wallash
发明人： Eric A. Eckberg , Robert R. Suchomel , Albert J. Wallash
IPC分类号： G11B5/39 , G11B5/00 , G11B5/17 , G11B5/40 , G11B5/48 , G11B5/33
CPC分类号： G11B5/4853 , G11B5/17 , G11B5/40 , G11B5/4886 , G11B2005/0018 , G11B5/3967
摘要： A method and apparatus for reducing the number of wires needed between the read/write elements and the AE module. An inductive coil and a magneto-resistive element are formed on a substrate such that each includes an input signal lead and a ground return lead terminal. The ground return lead terminal of the inductive coil and the magneto-resistive element share a common ground return lead. The common ground return lead may be formed using a distinct wiring construct or by using a conductive substrate. A conductive suspension may also be formed wherein the conductive substrate is coupled to the conductive suspension. The input signal lead of the inductive coil and the magneto-resistive element may also share a common connector pad for providing signal coupling. A current flow element may be used to control the flow of current through the inductive coil and the magneto-resistive element.
摘要翻译：一种用于减少读/写元件和AE模块之间所需的导线数量的方法和装置。感应线圈和磁阻元件形成在基板上，使得每个包括输入信号引线和接地返回引线端子。感应线圈和磁阻元件的接地回路引线端子共用一个公共接地回路引线。公共接地返回引线可以使用不同的布线构造或通过使用导电基板来形成。还可以形成导电悬浮液，其中导电基底与导电悬浮液相连。感应线圈和磁阻元件的输入信号引线也可以共享用于提供信号耦合的公共连接器焊盘。电流流动元件可用于控制通过感应线圈和磁阻元件的电流流动。

16. 发明授权

US5638237A Fusible-link removable shorting of magnetoresistive heads for electrostatic discharge protection 失效
标题翻译：用于静电放电保护的磁阻头的可熔连接可拆卸短路
公开(公告)号：US5638237A
公开(公告)日：1997-06-10
申请号：US519584
申请日：1995-08-25
申请人： Peter B. Phipps , Erhard T. Schreck , Albert J. Wallash
发明人： Peter B. Phipps , Erhard T. Schreck , Albert J. Wallash
IPC分类号： G01R33/09 , G11B5/00 , G11B5/008 , G11B5/012 , G11B5/02 , G11B5/31 , G11B5/39 , G11B5/40 , G11B19/04 , G11B5/10 , G11B5/127 , G11B5/33 , G11B5/41
CPC分类号： G11B5/3967 , G01R33/09 , G11B5/00 , G11B5/00813 , G11B5/012 , G11B5/02 , G11B5/39 , G11B5/40 , G11B19/04 , G11B5/3166
摘要： In a magnetic read/write assembly, a removable fusible-link shorts the magnetoresistive (MR) sensor element to minimize electrical current through the MR sensing element during discharge of static electricity. Other magnetic head assembly elements such as the write coil and MR magnetic shields are also shorted using fusible-links. The fusible-link is removable during the assembly process. The existing terminal pads and wires are used to remove the fusible-link.
摘要翻译：在磁读/写组件中，可移除的可熔链路使磁阻（MR）传感器元件短路，以在静电放电期间使通过MR感测元件的电流最小化。诸如写入线圈和MR磁屏蔽的其它磁头组件元件也使用可熔连接件短路。在组装过程中，可熔链可拆卸。现有的端子焊盘和导线用于去除熔丝。

17. 发明授权

US5559051A Process for manufacturing a silicon chip with an integrated magnetoresistive head mounted on a slider 失效
标题翻译：用于制造具有安装在滑块上的集成磁阻头的硅芯片的工艺
公开(公告)号：US5559051A
公开(公告)日：1996-09-24
申请号：US363465
申请日：1994-12-23
申请人： Steven H. Voldman , Albert J. Wallash , Reginald B. Wilcox, Jr.
发明人： Steven H. Voldman , Albert J. Wallash , Reginald B. Wilcox, Jr.
IPC分类号： G11B5/39 , G11B5/31 , G11B5/40 , G11B5/48 , G11B33/12 , H01L21/28 , H01L21/301 , H01L21/304 , H01L21/48
CPC分类号： G11B5/40 , G11B5/3106 , G11B33/12 , G11B5/3967 , G11B5/4806 , Y10T29/49034 , Y10T29/49041
摘要： A process of making an MR head having its MR stripe protected from electro-static discharge (ESD) on a slider, such as titanium carbide. The MR stripe is protected by a plurality of silicon integrated circuit devices which conduct ESD-induced current from the MR stripe to larger components in the MR head such as the first and second shield layers and the coil layer. In a preferred embodiment the integrated circuit devices and interconnects are constructed in a single crystal silicon chip. The silicon chip is fixedly mounted to a trailing edge of the slider and the MR head is mounted on a trailing edge of the silicon chip adjacent the integrated circuit devices. The invention includes a method of mass producing sliders by combining thin film technology for making MR heads with integrated circuit technology for making integrated circuit devices. These technologies are combined at the row level to ultimate completion of individual sliders. A silicon wafer, including the integrated circuit devices, is sliced into a plurality of silicon bars, each bar including a row of circuit devices. A plurality of rows and columns of MR heads are constructed on a ceramic wafer. The ceramic wafer is then also sliced into bars, each bar including a row of MR heads. Each silicon bar is then bonded to a ceramic bar, forming composite bars of MR heads electrically connected to the circuit devices. Each composite bar is then further processed and diced into individual sliders, each slider carrying an MR head which is ESD protected.
摘要翻译：制造具有其MR条纹的MR头的过程，其保护不受诸如碳化钛的滑块上的静电放电（ESD）的影响。 MR条纹由多个硅集成电路器件保护，这些硅集成电路器件将MR感应电流从MR条纹传导到MR头中的较大部件，例如第一和第二屏蔽层和线圈层。在优选实施例中，集成电路器件和互连构造在单晶硅芯片中。硅芯片固定地安装在滑块的后缘，并且MR磁头安装在硅芯片的与集成电路器件相邻的后缘。本发明包括通过将用于制造MR磁头的薄膜技术与用于制造集成电路器件的集成电路技术结合在一起来批量生产滑块的方法。这些技术在行级结合到最终完成各个滑块。包括集成电路器件的硅晶片被切成多个硅棒，每个棒包括一排电路器件。在陶瓷晶片上构造多个行和列的MR磁头。然后将陶瓷晶片切成棒，每个棒包括一排MR头。然后将每个硅棒结合到陶瓷棒，形成电连接到电路装置的MR头的复合棒。然后将每个复合棒进一步处理并切割成各个滑块，每个滑块承载ESD保护的MR头。

18. 发明授权

US5523898A Partial MR sensor bias current during write 失效
标题翻译：写入时部分MR传感器偏置电流
公开(公告)号：US5523898A
公开(公告)日：1996-06-04
申请号：US336611
申请日：1994-11-08
申请人： Stephen A. Jove , Albert J. Wallash
发明人： Stephen A. Jove , Albert J. Wallash
IPC分类号： G11B5/00 , G11B5/02 , G11B5/03 , G11B5/09 , G11B5/127
CPC分类号： G11B5/02 , G11B2005/0008 , G11B2005/0018
摘要： In a magnetoresistive read/inductive write magnetic transducer, magnetic stability of the magnetoresistive read sensor is improved by reducing the bias current to the magnetoresistive read sensor to a predetermined value during a period when a write current signal is applied to the inductive write head. The reduced bias current is greater than zero, but less than that required for reading data stored in a magnetic storage media. The reduced bias current is about 30% of the full bias current applied during the read operation of the magnetoresistive head.
摘要翻译：在磁阻读/感应式写磁换能器中，通过在将写入电流信号施加到电感写入头的期间将磁阻读取传感器的偏置电流减小到预定值来改善磁阻读取传感器的磁稳定性。减小的偏置电流大于零，但小于读取存储在磁存储介质中的数据所需的偏置电流。减小的偏置电流是在磁阻磁头的读取操作期间施加的全偏置电流的约30％。

19. 发明授权

US5492720A Method of manufacturing a magnetoresistive sensor 失效
标题翻译：制造磁阻传感器的方法
公开(公告)号：US5492720A
公开(公告)日：1996-02-20
申请号：US417874
申请日：1995-04-06
申请人： Hardayal S. Gill , Tsann Lin , Ching H. Tsang , Albert J. Wallash
发明人： Hardayal S. Gill , Tsann Lin , Ching H. Tsang , Albert J. Wallash
IPC分类号： G11B5/39 , B05D5/12
CPC分类号： G11B5/3932 , G11B5/399
摘要： In a magnetoresistive (MR) read sensor in which the MR layer is transversely biased by a soft magnetic layer separated from the MR layer by a nonmagnetic spacer layer an antiferromagnetic stabilization layer of NiO provides a stabilizing exchange-coupled magnetic field to the transverse bias layer insuring that the transverse bias layer is fully saturated in a preferred direction during sensor operation.
摘要翻译：在磁阻（MR）读取传感器中，MR层被由非磁性间隔层与MR层分离的软磁层横向偏置，NiO的反铁磁稳定层为横向偏置层提供稳定的交换耦合磁场确保在传感器操作期间横向偏置层在优选方向上完全饱和。

20. 发明授权

US5587857A Silicon chip with an integrated magnetoresistive head mounted on a slider 失效
标题翻译：具有安装在滑块上的集成磁阻头的硅芯片
公开(公告)号：US5587857A
公开(公告)日：1996-12-24
申请号：US324841
申请日：1994-10-18
申请人： Steven H. Voldman , Albert J. Wallash , Reginald B. Wilcox, Jr.
发明人： Steven H. Voldman , Albert J. Wallash , Reginald B. Wilcox, Jr.
IPC分类号： G11B5/39 , G11B5/31 , G11B5/40 , G11B5/48 , G11B33/12 , G11B21/21
CPC分类号： G11B5/40 , G11B5/3106 , G11B33/12 , G11B5/3967 , G11B5/4806 , Y10T29/49034 , Y10T29/49041
摘要： An MR head has its MR stripe protected from electro-static discharge (ESD) on a slider, such as titanium carbide. The MR stripe is protected by a plurality of silicon integrated circuit devices which conduct ESD-induced current from the MR stripe to a silicon chip substrate ground potential or to larger components in the MR head such as the first and second shield layers and the coil layer. In a preferred embodiment the integrated circuit devices and interconnects are constructed in a single crystal silicon chip. The silicon chip is fixedly mounted to a trailing edge of the slider and the MR head is mounted on a trailing edge of the silicon chip adjacent the integrated circuit devices. The invention includes a method of mass producing sliders by combining thin film technology for making MR heads with integrated circuit technology for making integrated circuit devices. These technologies are combined at the wafer level to ultimate completion of individual sliders. At the wafer level a silicon wafer, which contains the integrated circuit devices, is fixedly mounted to a wafer of slider material, such as titanium carbide. A plurality of rows and columns of MR heads are constructed on the silicon wafer adjacent the integrated circuit devices. The composite wafer is then diced into quadrants wherein each quadrant contains rows and columns of sliders with MR heads. Each quadrant is then diced into rows. Each row is then diced into individual sliders, each slider carrying an MR head which is ESD protected.
摘要翻译： MR磁头具有防止静电放电（ESD）的MR条纹，例如碳化钛。 MR条纹由多个硅集成电路器件保护，这些硅集成电路器件将从MR条纹到ESD芯片衬底接地电位的ESD感应电流或MR头中的较大部件（例如第一和第二屏蔽层）以及线圈层。在优选实施例中，集成电路器件和互连构造在单晶硅芯片中。硅芯片固定地安装在滑块的后缘，并且MR磁头安装在硅芯片的与集成电路器件相邻的后缘。本发明包括通过将用于制造MR磁头的薄膜技术与用于制造集成电路器件的集成电路技术结合在一起来批量生产滑块的方法。这些技术在晶圆级别结合到最终完成各个滑块。在晶片级，包含集成电路器件的硅晶片固定地安装在诸如碳化钛的滑块材料的晶片上。在与集成电路器件相邻的硅晶片上构造多个行和列MR磁头。然后将复合晶片切割成象限，其中每个象限包含具有MR磁头的行和列的滑块。然后将每个象限切成行。然后将每一行切成单独的滑块，每个滑块承载ESD保护的MR头。

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