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11. 发明专利

JP2004111763A Semiconductor light receiving device 有权
公开(公告)号：JP2004111763A
公开(公告)日：2004-04-08
申请号：JP2002274305
申请日：2002-09-20
申请人： Fujitsu Quantum Devices Ltd , 富士通カンタムデバイス株式会社
发明人： O KO , YONEDA MASAHIRO
IPC分类号： H01L31/10 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L31/105 , H01L31/1844 , Y02E10/544
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light receiving device that can operate at a high speed and can improve frequency response characteristic when the device is operated at a high speed with ≥40 GHz and when a high intensity light is made incident on the device.
SOLUTION: A PIN type photodiode 10 has a semiconductor substrate 11, a first-conductivity type contact layer 12 formed on the substrate 11, and a first-conductivity type buffer layer 13 which is lower in impurity concentration than the contact layer 12. The photodiode 10 also has a light absorbing layer 16 which generates carriers in response to incident light, a second-conductivity type InP layer 19 formed on the layer 16, and intermediate semiconductor layers (graded layers) 14 and 15 formed between the buffer layer 13 and light absorbing layer 16 and having a forbidden bandwidth between those of the layers 13 and 16.
COPYRIGHT: (C)2004,JPO

12. 发明专利

JP2004047589A Optical communication module, wavelength locker module, its set value aquisition equipment and method, its program, and recording medium recorded with its program 有权
公开(公告)号：JP2004047589A
公开(公告)日：2004-02-12
申请号：JP2002200669
申请日：2002-07-09
申请人： Fujitsu Quantum Devices Ltd , 富士通カンタムデバイス株式会社
发明人： ONO HARUYOSHI , BABA ISAO
IPC分类号： H01S5/0683 , H04B10/00 , H04B10/293 , H04B10/564 , H04B10/572 , H04J14/00 , H04J14/02 , H04B10/04 , H04B10/06 , H04B10/14
CPC分类号： H04B10/572 , H04B10/564
摘要： PROBLEM TO BE SOLVED: To provide an optical communication module and a wavelength locker module for avoiding the lowering of a yield by making a set value of an arbitrary value satisfy a power variable range and a temperature variable range, and to provide set value acquiring equipment and its method for obtaining the wavelength locker module, and its program and a recording medium recorded with the program. SOLUTION: The set value aquisition equipment is composed so as to control the temperature and the output intensity of a laser module on the basis of a set value corresponding to the temperature dependence and output intensity dependence of the laser module. Thereby a control range of the laser module becomes not a single point but a linear section (set range). Thus, the set value can be generated even if it is not on P-Cent which is a power set value. COPYRIGHT: (C)2004,JPO

13. 发明专利

JP3487422B2 Implementation test methods and test equipment of the optical module 有权
公开(公告)号：JP3487422B2
公开(公告)日：2004-01-19
申请号：JP2000044738
申请日：2000-02-22
申请人：富士通カンタムデバイス株式会社
发明人：晴義小野
IPC分类号： H01S5/022 , G01M11/00 , G02B6/42

14. 发明专利

JP3471648B2 Power amplifier circuit and the bias circuit 有权
公开(公告)号：JP3471648B2
公开(公告)日：2003-12-02
申请号：JP5177299
申请日：1999-02-26
申请人：富士通カンタムデバイス株式会社
发明人：直行宮沢
IPC分类号： H03F1/32 , G05F3/20 , H03F1/02 , H03F1/30 , H03F3/21
CPC分类号： G05F3/205 , H03F1/302 , H03F2200/294 , H03F2200/372

15. 发明专利

JP3470797B2 Buffer circuit 有权
公开(公告)号：JP3470797B2
公开(公告)日：2003-11-25
申请号：JP2000174749
申请日：2000-06-12
申请人：富士通カンタムデバイス株式会社
发明人：幹久保田
IPC分类号： H03K19/0175 , H03F3/45 , H03F3/50 , H04B10/07 , H04B10/2507 , H04B10/293 , H04B10/40 , H04B10/50 , H04B10/516 , H04B10/524 , H04B10/564 , H04B10/60 , H04B10/61 , H04B10/04 , H04B10/06 , H04B10/14 , H04B10/142 , H04B10/152 , H04B10/26 , H04B10/28
CPC分类号： H03F3/45183 , H03F3/505 , H03F2203/45571 , H03F2203/45608 , H03F2203/45612 , H03F2203/45702

16. 发明专利

JP3458120B2 High-frequency semiconductor device 有权
标题翻译：空值
公开(公告)号：JP3458120B2
公开(公告)日：2003-10-20
申请号：JP2001099956
申请日：2001-03-30
申请人：富士通カンタムデバイス株式会社
发明人：宗春後藤 , 裕耳野 , 芳雄青木 , 修馬場
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/822 , H01L23/34 , H01L23/367 , H01L23/66 , H01L27/04 , H01P3/08
CPC分类号： H01L23/66 , H01L23/3677 , H01L2924/0002 , H01L2924/12044 , H01L2924/00

17. 发明专利

JP2003282583A Heterojunction bipolar transistor 有权
标题翻译：异相双极晶体管
公开(公告)号：JP2003282583A
公开(公告)日：2003-10-03
申请号：JP2002087196
申请日：2002-03-26
申请人： Fujitsu Quantum Devices Ltd , 富士通カンタムデバイス株式会社
发明人： OGURI HIROYUKI
IPC分类号： H01L21/28 , H01L21/331 , H01L29/08 , H01L29/417 , H01L29/737 , H01L31/032 , H01L31/0328 , H01L31/0336 , H01L31/06 , H01L31/072
CPC分类号： H01L29/66318 , H01L29/0817 , H01L29/7371
摘要： PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor capable of maintaining high reliability over a long term by effectively suppressing the diffusion of Au to an epitaxial layer.
SOLUTION: In a heterojunction bipolar transistor having a collector layer (12), a base layer (13), and an emitter layer (14), an Au diffusion preventing layer (20) of InP or InGaP is formed between an emitter electrode (19) including gold and the base layer (13). Thus, it can effectively suppress the diffusion of Au to an epitaxial layer, and to obtain a heterojunction bipolar transistor capable of maintaining high reliability over a long term.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种能够通过有效地抑制Au向外延层的扩散而提供长期保持高可靠性的异质结双极晶体管。解决方案：在具有集电极层（12），基极层（13）和发射极层（14）的异质结双极晶体管中，在发射极（14）之间形成InP或InGaP的Au扩散防止层（20）包括金的电极（19）和基底层（13）。因此，能够有效地抑制Au向外延层的扩散，从而获得长期保持高可靠性的异质结双极型晶体管。版权所有（C）2004，JPO

18. 发明专利

JP2003077802A Electron beam lithography device and method 有权
标题翻译：电子束光刻设备及方法
公开(公告)号：JP2003077802A
公开(公告)日：2003-03-14
申请号：JP2001264999
申请日：2001-08-31
申请人： Fujitsu Ltd , Fujitsu Quantum Devices Ltd , 富士通カンタムデバイス株式会社 , 富士通株式会社
发明人： IKECHI NAOYA , MAKIYAMA KOZO , OGIRI KATSUMI
IPC分类号： G03F7/20 , H01J37/305 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an electron beam lithography device and a method which is capable of drawing a pattern with high accuracy. SOLUTION: The system has a means 18 of moving a drawing region 10 defined on a sample so as to draw a pattern over regions, except a specified spot 16 within the region 10. On the specified spot 16, e.g. there is the possibility that a variable rectangular shot becomes or may become discontinuous. Except the specified spot 16, a pattern is drawn, to enable the pattern drawing without disconnection. This means is, e.g. one for moving a stage with the sample mounted thereon or one for moving the drawing area by electromagnetic deflection or may be one having a means of determining whether the pattern to be written locates at the specified spot by comparison of the pattern to be drawn with the coordinates of the drawing area.
摘要翻译：要解决的问题：提供一种能够高精度地绘制图案的电子束光刻装置和方法。解决方案：系统具有移动限定在样本上的绘图区域10的装置18，以便在区域10内的特定斑点16之外的区域上绘制图案。存在可变矩形镜头变成或可能变得不连续的可能性。除了指定的点16之外，绘制图案，以使得图案绘制不断开。这意味着例如。用于移动具有安装在其上的样品的台面或用于通过电磁偏转移动绘图区域的台阶，或者可以是具有通过将要绘制的图案与要绘制的图案进行比较来确定要写入的图案位于指定点处的装置的装置绘图区域的坐标。

19. 发明专利

JP2003017802A Method and device for inspecting wavelength of optical semiconductor laser 有权
标题翻译：用于检测光学半导体激光波长的方法和装置
公开(公告)号：JP2003017802A
公开(公告)日：2003-01-17
申请号：JP2001198337
申请日：2001-06-29
申请人： Fujitsu Quantum Devices Ltd , 富士通カンタムデバイス株式会社
发明人： ONO HARUYOSHI , BABA ISAO
IPC分类号： G01J9/00 , G01J1/42 , G01M11/00 , H01S5/06 , H01S5/0687
CPC分类号： H01S5/0687 , H01S5/0612 , H01S5/0617
摘要： PROBLEM TO BE SOLVED: To shorten the time required for inspecting many semiconductor lasers.
SOLUTION: The oscillation wavelength of a semiconductor laser is tuned to a prescribed target wavelength, by acquiring a corrected wavelength coefficient of replacing the fundamental wavelength coefficient of the laser from the variations in wavelength changing item for changing the wavelength of the laser and the ratio between an actually measured wavelength, which varies depending on the changes of the wavelength changing item and a target wavelength. In this case, the corrected wavelength coefficient is first found once, and thereafter, the tuning is conducted, based on the first found corrected wavelength coefficient, without finding corrected wavelength coefficients one after another.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：缩短检查许多半导体激光器所需的时间。解决方案：将半导体激光器的振荡波长调整到规定的目标波长，通过从用于改变激光波长的波长变化项目的变化中获取校正的波长系数来代替激光器的基波长系数，实际测量的波长，其根据波长变化项目和目标波长的变化而变化。在这种情况下，首先找到校正的波长系数一次，然后基于第一发现的校正波长系数进行调谐，而不是一个接一个地找到校正的波长系数。

20. 发明专利

JP3515013B2 Semiconductor device and a method of manufacturing the same 有权
公开(公告)号：JP3515013B2
公开(公告)日：2004-04-05
申请号：JP13430699
申请日：1999-05-14
申请人：富士通カンタムデバイス株式会社
发明人：眞弘西
IPC分类号： H01L21/60
CPC分类号： H01L2224/11

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