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    • 186. 发明授权
    • System and method for thermal process including a thermoelectric heat pump and internal heat exchanger
    • 包括热电热泵和内部热交换器的热处理系统和方法
    • US08365539B2
    • 2013-02-05
    • US12658709
    • 2010-02-12
    • Gang ChenChristine Susanne JuniorJuergen Koehler
    • Gang ChenChristine Susanne JuniorJuergen Koehler
    • F25B21/02
    • D06F58/206
    • A system for using a thermal cycle for healing or cooling. The system comprises a thermoelectric module flowing a gas; and an internal heat exchanger flowing the gas and exchanging heat between the gas and another fluid; the gas flow from at least one of the thermoelectric module and the internal heat exchanger flowing for heating or cooling. The system may be for using a closed cycle to remove a liquid from at least one object comprising moisture, the system comprising an enclosure containing the at least one object and arranged to receive a hot and dry gas for flow over the at least one object and thereby to produce a flow of moist gas at an intermediate temperature. The internal heat exchanger is arranged to exchange heat between the flow of the moist gas at the intermediate temperature and a flow of cold dry gas, thereby producing cooled moist gas and pre-warmed dry gas.
    • 使用热循环进行愈合或冷却的系统。 该系统包括流过气体的热电模块; 以及内部热交换器流动气体并在气体和另一种流体之间进行热交换; 来自热电模块和内部热交换器中的至少一个的气体流动用于加热或冷却。 该系统可以是用于使用封闭循环从至少一个包含水分的物体去除液体,该系统包括一个包含至少一个物体的外壳,并且被布置成接收用于流过至少一个物体的热和干燥气体,以及 从而在中间温度下产生湿气流。 内部热交换器布置成在中间温度的湿气流与冷干气流之间交换热量,从而产生冷却的湿气和预热的干燥气体。
    • 189. 发明授权
    • Potential amplified nonequilibrium thermal electric device (PANTEC)
    • 潜在放大非平衡热电装置(PANTEC)
    • US08309838B2
    • 2012-11-13
    • US11035479
    • 2005-01-14
    • Gang Chen
    • Gang Chen
    • H01L31/00H01L35/28
    • H01L35/00H01L35/30
    • A semiconductor structure is provided that can be used for cooling, heating, and power generation. A first region of the semiconductor structure has a first length and comprises a first semiconductor material doped at a first concentration with a first dopant. A second region is disposed adjacent to the first region so as to define a first interface, has a second length which is longer than the first length, and comprises a second semiconductor material doped at a second concentration with a second dopant. At least one of the first material, second material, first concentration, second concentration, first length, second length, first dopant, and second dopant is selected to create, at the first interface, a forward electrical potential step having a barrier height dependent at least in part on an average temperature (T) of the semiconductor structure, e.g., a range of approximately 3-10 κBT, where κB is the Boltzmann constant.
    • 提供了可用于冷却,加热和发电的半导体结构。 半导体结构的第一区域具有第一长度并且包括以第一掺杂剂以第一浓度掺杂的第一半导体材料。 第二区域被布置为与第一区域相邻以限定第一界面,具有比第一长度更长的第二长度,并且包括以第二浓度掺杂第二掺杂剂的第二半导体材料。 选择第一材料,第二材料,第一浓度,第二浓度,第一长度,第二长度,第一掺杂剂和第二掺杂剂中的至少一种,以在第一界面处产生具有取决于 至少部分地取决于半导体结构的平均温度(T),例如大约3-10&kgr; BT的范围,其中&kgr; B是玻尔兹曼常数。